KR102661857B1 - 플라즈마 처리 방법 - Google Patents

플라즈마 처리 방법 Download PDF

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Publication number
KR102661857B1
KR102661857B1 KR1020190020266A KR20190020266A KR102661857B1 KR 102661857 B1 KR102661857 B1 KR 102661857B1 KR 1020190020266 A KR1020190020266 A KR 1020190020266A KR 20190020266 A KR20190020266 A KR 20190020266A KR 102661857 B1 KR102661857 B1 KR 102661857B1
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South Korea
Prior art keywords
substrate
focus ring
plasma processing
direct current
film
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KR1020190020266A
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Korean (ko)
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KR20190101889A (ko
Inventor
도시후미 나가이와
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도쿄엘렉트론가부시키가이샤
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Publication of KR20190101889A publication Critical patent/KR20190101889A/ko
Priority to KR1020240054672A priority Critical patent/KR102939511B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/3065—
    • H01L21/31116—
    • H01L21/31144—
    • H01L22/12—
    • H01L22/14—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
KR1020190020266A 2018-02-23 2019-02-21 플라즈마 처리 방법 Active KR102661857B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020240054672A KR102939511B1 (ko) 2018-02-23 2024-04-24 플라즈마 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018030501A JP7018331B2 (ja) 2018-02-23 2018-02-23 プラズマ処理方法及びプラズマ処理装置
JPJP-P-2018-030501 2018-02-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020240054672A Division KR102939511B1 (ko) 2018-02-23 2024-04-24 플라즈마 처리 장치

Publications (2)

Publication Number Publication Date
KR20190101889A KR20190101889A (ko) 2019-09-02
KR102661857B1 true KR102661857B1 (ko) 2024-04-26

Family

ID=67686115

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020190020266A Active KR102661857B1 (ko) 2018-02-23 2019-02-21 플라즈마 처리 방법
KR1020240054672A Active KR102939511B1 (ko) 2018-02-23 2024-04-24 플라즈마 처리 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020240054672A Active KR102939511B1 (ko) 2018-02-23 2024-04-24 플라즈마 처리 장치

Country Status (4)

Country Link
US (2) US10714318B2 (https=)
JP (1) JP7018331B2 (https=)
KR (2) KR102661857B1 (https=)
TW (1) TWI791093B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020023409A1 (en) * 2018-07-24 2020-01-30 Applied Materials, Inc. Optically transparent pedestal for fluidly supporting a substrate
US20210195726A1 (en) * 2019-12-12 2021-06-24 James Andrew Leskosek Linear accelerator using a stacked array of cyclotrons
JP7475193B2 (ja) 2020-05-07 2024-04-26 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102807826B1 (ko) * 2021-01-08 2025-05-14 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법
CN119852157B (zh) * 2025-01-02 2025-12-05 湖北江城实验室 一种等离子体处理装置及其处理晶片的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230049A1 (en) * 2004-04-14 2005-10-20 Ryoji Nishio Method and apparatus for plasma processing
JP2017112275A (ja) * 2015-12-17 2017-06-22 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置

Family Cites Families (15)

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US6363882B1 (en) 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
JP5080810B2 (ja) * 2004-11-02 2012-11-21 パナソニック株式会社 プラズマ処理方法およびプラズマ処理装置
JP4566789B2 (ja) 2005-03-07 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP4884047B2 (ja) 2006-03-23 2012-02-22 東京エレクトロン株式会社 プラズマ処理方法
US20070224709A1 (en) 2006-03-23 2007-09-27 Tokyo Electron Limited Plasma processing method and apparatus, control program and storage medium
KR20080001164A (ko) * 2006-06-29 2008-01-03 주식회사 하이닉스반도체 홀 휨 방지를 위한 플라즈마식각장치 및 그를 이용한 식각방법
KR20080023569A (ko) * 2006-09-11 2008-03-14 주식회사 하이닉스반도체 식각프로파일 변형을 방지하는 플라즈마식각장치
JP4833890B2 (ja) * 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
JP5281309B2 (ja) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP2010034416A (ja) * 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
JP5395633B2 (ja) * 2009-11-17 2014-01-22 東京エレクトロン株式会社 基板処理装置の基板載置台
JP5948026B2 (ja) * 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
JP2017126727A (ja) * 2016-01-15 2017-07-20 東京エレクトロン株式会社 載置台の構造及び半導体処理装置
US11404249B2 (en) * 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230049A1 (en) * 2004-04-14 2005-10-20 Ryoji Nishio Method and apparatus for plasma processing
JP2017112275A (ja) * 2015-12-17 2017-06-22 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置

Also Published As

Publication number Publication date
US10714318B2 (en) 2020-07-14
JP7018331B2 (ja) 2022-02-10
JP2019145729A (ja) 2019-08-29
KR20240060768A (ko) 2024-05-08
KR20190101889A (ko) 2019-09-02
US20190267217A1 (en) 2019-08-29
TW201937594A (zh) 2019-09-16
KR102939511B1 (ko) 2026-03-13
US11342165B2 (en) 2022-05-24
TWI791093B (zh) 2023-02-01
US20200303170A1 (en) 2020-09-24

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