JP6994806B2 - 両面露光装置及び両面露光方法 - Google Patents

両面露光装置及び両面露光方法 Download PDF

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Publication number
JP6994806B2
JP6994806B2 JP2017210654A JP2017210654A JP6994806B2 JP 6994806 B2 JP6994806 B2 JP 6994806B2 JP 2017210654 A JP2017210654 A JP 2017210654A JP 2017210654 A JP2017210654 A JP 2017210654A JP 6994806 B2 JP6994806 B2 JP 6994806B2
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Japan
Prior art keywords
mask
mark
alignment
substrate
masks
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JP2017210654A
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English (en)
Japanese (ja)
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JP2019082612A5 (https=
JP2019082612A (ja
Inventor
淳 名古屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adtec Engineering Co Ltd
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Adtec Engineering Co Ltd
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Publication date
Application filed by Adtec Engineering Co Ltd filed Critical Adtec Engineering Co Ltd
Priority to JP2017210654A priority Critical patent/JP6994806B2/ja
Priority to TW107138121A priority patent/TWI772549B/zh
Priority to KR1020180130946A priority patent/KR102622294B1/ko
Priority to CN202410091928.9A priority patent/CN117806134A/zh
Priority to CN201811284543.5A priority patent/CN109725502B/zh
Publication of JP2019082612A publication Critical patent/JP2019082612A/ja
Publication of JP2019082612A5 publication Critical patent/JP2019082612A5/ja
Priority to JP2021201932A priority patent/JP7121184B2/ja
Application granted granted Critical
Publication of JP6994806B2 publication Critical patent/JP6994806B2/ja
Priority to KR1020240000262A priority patent/KR102839210B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Indication In Cameras, And Counting Of Exposures (AREA)
  • Separation By Low-Temperature Treatments (AREA)
JP2017210654A 2017-10-31 2017-10-31 両面露光装置及び両面露光方法 Active JP6994806B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2017210654A JP6994806B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法
TW107138121A TWI772549B (zh) 2017-10-31 2018-10-29 兩面曝光裝置及兩面曝光方法
KR1020180130946A KR102622294B1 (ko) 2017-10-31 2018-10-30 양면 노광 장치 및 양면 노광 방법
CN201811284543.5A CN109725502B (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法
CN202410091928.9A CN117806134A (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法
JP2021201932A JP7121184B2 (ja) 2017-10-31 2021-12-13 両面露光装置及び両面露光方法
KR1020240000262A KR102839210B1 (ko) 2017-10-31 2024-01-02 양면 노광 장치 및 양면 노광 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017210654A JP6994806B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021201932A Division JP7121184B2 (ja) 2017-10-31 2021-12-13 両面露光装置及び両面露光方法

Publications (3)

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JP2019082612A JP2019082612A (ja) 2019-05-30
JP2019082612A5 JP2019082612A5 (https=) 2020-09-17
JP6994806B2 true JP6994806B2 (ja) 2022-01-14

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JP2017210654A Active JP6994806B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法

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Country Link
JP (1) JP6994806B2 (https=)
KR (2) KR102622294B1 (https=)
CN (2) CN109725502B (https=)
TW (1) TWI772549B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7458950B2 (ja) * 2020-09-23 2024-04-01 株式会社Ｓｃｒｅｅｎホールディングス 描画システム
CN114518695B (zh) * 2020-11-20 2024-09-17 源卓微纳科技(苏州)股份有限公司 一种双面曝光系统的校正方法和曝光方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000099158A (ja) 1998-09-18 2000-04-07 Orc Mfg Co Ltd ワークとマスクの整合機構および整合方法
JP2007121425A (ja) 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP5997409B1 (ja) 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法
JP2019082611A (ja) 2017-10-31 2019-05-30 株式会社アドテックエンジニアリング 両面露光装置
JP2019082610A (ja) 2017-10-31 2019-05-30 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2600027B2 (ja) * 1991-05-16 1997-04-16 日立テクノエンジニアリング株式会社 画像位置合わせ方法およびその装置
US20010049589A1 (en) * 1993-01-21 2001-12-06 Nikon Corporation Alignment method and apparatus therefor
JPH08160542A (ja) * 1994-12-02 1996-06-21 Nippon Seiko Kk 露光装置
JP2994991B2 (ja) * 1995-09-19 1999-12-27 ウシオ電機株式会社 マスクとワークの位置合わせ方法および装置
JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP2004095906A (ja) * 2002-08-30 2004-03-25 Nsk Ltd 位置合わせ装置及び位置合わせ方法
JP2005121959A (ja) * 2003-10-17 2005-05-12 Pentax Corp 両面露光装置
JP2006278648A (ja) 2005-03-29 2006-10-12 Nsk Ltd 両面露光方法
JP5333063B2 (ja) * 2009-08-28 2013-11-06 ウシオ電機株式会社 両面露光装置
JP5382456B2 (ja) * 2010-04-08 2014-01-08 株式会社ブイ・テクノロジー 露光方法及び露光装置
JP2012089723A (ja) * 2010-10-21 2012-05-10 Ushio Inc コンタクト露光方法および装置
JP6200224B2 (ja) * 2012-09-13 2017-09-20 日本メクトロン株式会社 フォトマスク、フォトマスク組、露光装置および露光方法
TWI553423B (zh) * 2014-11-11 2016-10-11 Beac Co Ltd Exposure device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000099158A (ja) 1998-09-18 2000-04-07 Orc Mfg Co Ltd ワークとマスクの整合機構および整合方法
JP2007121425A (ja) 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP5997409B1 (ja) 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法
JP2019082611A (ja) 2017-10-31 2019-05-30 株式会社アドテックエンジニアリング 両面露光装置
JP2019082610A (ja) 2017-10-31 2019-05-30 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法

Also Published As

Publication number Publication date
KR102839210B1 (ko) 2025-07-28
TW201933432A (zh) 2019-08-16
CN109725502A (zh) 2019-05-07
CN117806134A (zh) 2024-04-02
KR20240005244A (ko) 2024-01-11
JP2019082612A (ja) 2019-05-30
TWI772549B (zh) 2022-08-01
KR20190049563A (ko) 2019-05-09
KR102622294B1 (ko) 2024-01-08
CN109725502B (zh) 2024-02-06

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