JP6993547B2 - 局地化されたシリコンエピタキシャルシード形成によるバルクウェハにおける隔離された半導体層 - Google Patents
局地化されたシリコンエピタキシャルシード形成によるバルクウェハにおける隔離された半導体層 Download PDFInfo
- Publication number
- JP6993547B2 JP6993547B2 JP2019238830A JP2019238830A JP6993547B2 JP 6993547 B2 JP6993547 B2 JP 6993547B2 JP 2019238830 A JP2019238830 A JP 2019238830A JP 2019238830 A JP2019238830 A JP 2019238830A JP 6993547 B2 JP6993547 B2 JP 6993547B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- integrated circuit
- silicon
- single crystal
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 44
- 229910052710 silicon Inorganic materials 0.000 title claims description 44
- 239000010703 silicon Substances 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 235000012431 wafers Nutrition 0.000 title description 7
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 238000000034 method Methods 0.000 claims description 111
- 239000013078 crystal Substances 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 239000003989 dielectric material Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 169
- 238000002955 isolation Methods 0.000 description 86
- 239000000758 substrate Substances 0.000 description 41
- 230000005855 radiation Effects 0.000 description 25
- 238000001953 recrystallisation Methods 0.000 description 23
- 238000005530 etching Methods 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000006309 butyl amino group Chemical group 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76272—Vertical isolation by lateral overgrowth techniques, i.e. ELO techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76248—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using lateral overgrowth techniques, i.e. ELO techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76278—Vertical isolation by selective deposition of single crystal silicon, i.e. SEG techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76289—Lateral isolation by air gap
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Description
Claims (14)
- 集積回路であって、
向き合う第1及び第2の表面を有し、本質的に単結晶シリコンベースの半導体材料で構成されるバルクシリコンウェハであって、その中に凹部を有し、前記凹部が底部と少なくとも第1及び第2の側壁を有し、前記凹部が前記底部から前記第1の表面に延びる、前記バルクシリコンウェハと、
前記凹部の少なくとも一部内の埋込誘電体層であって、前記第1及び第2の側壁に延び、その中にトレンチを有し、前記トレンチが前記バルクシリコンウェハに延びる、前記埋込誘電体層と、
少なくとも前記トレンチを充填する単結晶シリコンベースのシード層と、
前記埋込誘電体層を少なくとも部分的に覆うエピタキシャルシリコン層と、
を含み、
少なくとも前記エピタキシャルシリコン層が前記埋込誘電体層を覆う範囲まで、前記エピタキシャルシリコン層が本質的に単結晶材料で構成され、前記シード層と前記エピタキシャルシリコン層とが平坦な頂部表面を提供する、集積回路。 - 請求項1に記載の集積回路であって、
前記エピタキシャルシリコン層上に誘電体層を更に含む、集積回路。 - 請求項1に記載の集積回路であって、
前記エピタキシャルシリコン層と前記凹部の側壁との間に誘電体層を更に含む、集積回路。 - 請求項1に記載の集積回路であって、
前記シリコンベースのシード層の少なくとも一部が選択性エピタキシャル成長により形成される、集積回路。 - 請求項1に記載の集積回路であって、
前記エピタキシャルシリコン層の少なくとも一部が前記シリコンベースのシード層の少なくとも一部に近接する、集積回路。 - 請求項1に記載の集積回路であって、
前記エピタキシャルシリコン層の第1の表面が前記バルクシリコンウェハの第1の表面と共面である、集積回路。 - 請求項1に記載の集積回路であって、
前記埋込誘電体層が二酸化シリコンを含む、集積回路。 - 請求項1に記載の集積回路であって、
前記埋込誘電体層が異なる誘電体材料の副層を含む、集積回路。 - 集積回路を製造する方法であって、
向かい合う第1及び第2の表面を有し、本質的に単結晶シリコンベースの半導体材料で構成されるバルクシリコンウェハに凹部を形成することであって、前記凹部が底部と少なくとも第1及び第2の側壁を有し、前記凹部が前記底部から前記第1の表面に延びる、前記バルクシリコンウェハに凹部を形成することと、
前記凹部の少なくとも一部内に埋込誘電体層を形成することであって、前記埋込誘電体層が前記第1及び第2の側壁に延びてその中にトレンチを有し、前記トレンチが前記バルクシリコンウェハに延びる、前記埋込誘電体層を形成することと、
少なくとも前記トレンチを充填する単結晶シリコンベースのシード層を形成することであって、前記シリコンベースのシード層の少なくとも一部が選択エピタキシャル成長により形成される、前記シリコンベースのシード層を形成することと、
前記埋込誘電体層を少なくとも部分的に覆うエピタキシャルシリコン層を形成することであって、前記エピタキシャルシリコン層の少なくとも一部が非選択性エピタキシャル成長により形成され、前記エピタキシャルシリコン層の少なくとも一部が前記シリコンベースのシード層の少なくとも一部に近接する、前記エピタキシャルシリコン層を形成すことと、
を含み、
少なくとも前記エピタキシャルシリコン層が前記埋込誘電体層に重なる範囲まで、前記エピタキシャルシリコン層が本質的に単結晶材料で構成され、前記シード層と前記エピタキシャルシリコン層とが平坦な頂部表面を提供する、方法。 - 請求項9に記載の方法であって、
前記エピタキシャルシリコン層上に誘電体層を形成することを更に含む、方法。 - 請求項9に記載の方法であって、
前記エピタキシャルシリコン層と前記凹部の側壁との間に誘電体層を形成することを更に含む、方法。 - 請求項9に記載の方法であって、
前記エピタキシャルシリコン層の第1の表面が前記バルクシリコンウェハの前記第1の表面と共面である、方法。 - 請求項9に記載の方法であって、
前記埋込誘電体層が二酸化シリコンを含む、方法。 - 請求項9に記載の方法であって、
前記埋込誘電体層が異なる誘電体材料の副層を含む、方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461978935P | 2014-04-13 | 2014-04-13 | |
US61/978,935 | 2014-04-13 | ||
US14/301,788 | 2014-06-11 | ||
US14/301,788 US9330959B2 (en) | 2014-04-13 | 2014-06-11 | Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016562495A Division JP2017511610A (ja) | 2014-04-13 | 2015-04-13 | 局地化されたシリコンエピタキシャルシード形成によるバルクウエハにおける隔離された半導体層 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020061577A JP2020061577A (ja) | 2020-04-16 |
JP6993547B2 true JP6993547B2 (ja) | 2022-01-13 |
Family
ID=54265679
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016562495A Pending JP2017511610A (ja) | 2014-04-13 | 2015-04-13 | 局地化されたシリコンエピタキシャルシード形成によるバルクウエハにおける隔離された半導体層 |
JP2019143488A Active JP7137538B2 (ja) | 2014-04-13 | 2019-08-05 | 局地化されたシリコンエピタキシャルシード形成によるバルクウェハにおける隔離された半導体層 |
JP2019238830A Active JP6993547B2 (ja) | 2014-04-13 | 2019-12-27 | 局地化されたシリコンエピタキシャルシード形成によるバルクウェハにおける隔離された半導体層 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016562495A Pending JP2017511610A (ja) | 2014-04-13 | 2015-04-13 | 局地化されたシリコンエピタキシャルシード形成によるバルクウエハにおける隔離された半導体層 |
JP2019143488A Active JP7137538B2 (ja) | 2014-04-13 | 2019-08-05 | 局地化されたシリコンエピタキシャルシード形成によるバルクウェハにおける隔離された半導体層 |
Country Status (5)
Country | Link |
---|---|
US (3) | US9330959B2 (ja) |
EP (1) | EP3132468B1 (ja) |
JP (3) | JP2017511610A (ja) |
CN (2) | CN116646315A (ja) |
WO (1) | WO2015160714A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9330959B2 (en) * | 2014-04-13 | 2016-05-03 | Texas Instruments Incorporated | Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation |
CN107527815B (zh) * | 2016-06-21 | 2022-03-22 | 蓝枪半导体有限责任公司 | 外延层的制作方法 |
CN107958933B (zh) * | 2016-10-17 | 2020-05-26 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置及其制造方法 |
US20230420546A1 (en) * | 2022-06-24 | 2023-12-28 | Nxp Usa, Inc. | Transistor with current terminal regions and channel region in layer over dielectric |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000332224A (ja) | 1999-04-30 | 2000-11-30 | Stmicroelectronics Srl | 集積回路構造の製造方法 |
JP2003332414A (ja) | 2002-05-13 | 2003-11-21 | Hynix Semiconductor Inc | 半導体素子の製造方法および半導体素子 |
JP2008159691A (ja) | 2006-12-21 | 2008-07-10 | Rohm Co Ltd | 窒化物半導体結晶成長基板、窒化物半導体素子および窒化物半導体結晶成長基板の製造方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594048A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 半導体装置の製造方法 |
JPS63131510A (ja) * | 1986-11-21 | 1988-06-03 | Hitachi Ltd | 単結晶薄膜の形成方法 |
US4749441A (en) * | 1986-12-11 | 1988-06-07 | General Motors Corporation | Semiconductor mushroom structure fabrication |
FR2629636B1 (fr) * | 1988-04-05 | 1990-11-16 | Thomson Csf | Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant |
JPH0281422A (ja) * | 1988-09-16 | 1990-03-22 | Fuji Electric Co Ltd | Soi基板の製造方法 |
US5017999A (en) * | 1989-06-30 | 1991-05-21 | Honeywell Inc. | Method for forming variable width isolation structures |
US5143862A (en) * | 1990-11-29 | 1992-09-01 | Texas Instruments Incorporated | SOI wafer fabrication by selective epitaxial growth |
JPH1092922A (ja) * | 1996-09-10 | 1998-04-10 | Sony Corp | 半導体装置の製造方法及び半導体装置 |
US5891763A (en) * | 1997-10-22 | 1999-04-06 | Wanlass; Frank M. | Damascene pattering of SOI MOS transistors |
US6198114B1 (en) * | 1997-10-28 | 2001-03-06 | Stmicroelectronics, Inc. | Field effect transistor having dielectrically isolated sources and drains and method for making same |
JP2002359290A (ja) | 2001-03-27 | 2002-12-13 | Matsushita Electric Ind Co Ltd | 半導体集積装置 |
EP1302982A1 (de) * | 2001-10-12 | 2003-04-16 | Infineon Technologies AG | Verfahren zum Ausbilden einer vertikalen Feldeffekttransistoreinrichtung |
US6627510B1 (en) * | 2002-03-29 | 2003-09-30 | Sharp Laboratories Of America, Inc. | Method of making self-aligned shallow trench isolation |
DE102004005506B4 (de) * | 2004-01-30 | 2009-11-19 | Atmel Automotive Gmbh | Verfahren zur Erzeugung von aktiven Halbleiterschichten verschiedener Dicke in einem SOI-Wafer |
US7087965B2 (en) * | 2004-04-22 | 2006-08-08 | International Business Machines Corporation | Strained silicon CMOS on hybrid crystal orientations |
US7611937B2 (en) * | 2005-06-24 | 2009-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance transistors with hybrid crystal orientations |
KR100611076B1 (ko) * | 2005-07-15 | 2006-08-09 | 삼성전자주식회사 | 스택형 반도체 장치 및 그 제조 방법 |
US7465642B2 (en) | 2005-10-28 | 2008-12-16 | International Business Machines Corporation | Methods for forming semiconductor structures with buried isolation collars |
JP2007207815A (ja) * | 2006-01-31 | 2007-08-16 | Seiko Epson Corp | 半導体装置、及び半導体装置の製造方法 |
KR100703033B1 (ko) * | 2006-03-22 | 2007-04-09 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US7435639B2 (en) * | 2006-05-31 | 2008-10-14 | Freescale Semiconductor, Inc. | Dual surface SOI by lateral epitaxial overgrowth |
US7749829B2 (en) * | 2007-05-01 | 2010-07-06 | Freescale Semiconductor, Inc. | Step height reduction between SOI and EPI for DSO and BOS integration |
US7790528B2 (en) * | 2007-05-01 | 2010-09-07 | Freescale Semiconductor, Inc. | Dual substrate orientation or bulk on SOI integrations using oxidation for silicon epitaxy spacer formation |
US8815654B2 (en) * | 2007-06-14 | 2014-08-26 | International Business Machines Corporation | Vertical current controlled silicon on insulator (SOI) device such as a silicon controlled rectifier and method of forming vertical SOI current controlled devices |
JP5353016B2 (ja) * | 2008-01-22 | 2013-11-27 | 株式会社デンソー | 半導体装置 |
US8253211B2 (en) * | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
KR20100091742A (ko) | 2009-02-11 | 2010-08-19 | 삼성전자주식회사 | 반도체 집적 회로 장치 및 그의 제조 방법 |
US8093084B2 (en) * | 2009-04-30 | 2012-01-10 | Freescale Semiconductor, Inc. | Semiconductor device with photonics |
US20110147883A1 (en) * | 2009-12-23 | 2011-06-23 | Infineon Technologies Austria Ag | Semiconductor body with a buried material layer and method |
DE102010002412B4 (de) | 2010-02-26 | 2012-04-26 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Transistor mit vergrabener Metallgateelektrodenstruktur mit großem ε |
US9806190B2 (en) * | 2010-10-28 | 2017-10-31 | Texas Instruments Incorporated | High voltage drain extension on thin buried oxide SOI |
US8623713B2 (en) | 2011-09-15 | 2014-01-07 | International Business Machines Corporation | Trench isolation structure |
US8603889B2 (en) | 2012-03-30 | 2013-12-10 | International Business Machines Corporation | Integrated circuit structure having air-gap trench isolation and related design structure |
US8637993B2 (en) | 2012-04-23 | 2014-01-28 | GlobalFoundries, Inc. | 3D integrated circuit system with connecting via structure and method for forming the same |
KR102078851B1 (ko) * | 2013-03-11 | 2020-04-08 | 삼성전자 주식회사 | 에피택셜층 형성 방법 |
US9330959B2 (en) * | 2014-04-13 | 2016-05-03 | Texas Instruments Incorporated | Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation |
-
2014
- 2014-06-11 US US14/301,788 patent/US9330959B2/en active Active
-
2015
- 2015-04-13 EP EP15780680.3A patent/EP3132468B1/en active Active
- 2015-04-13 WO PCT/US2015/025593 patent/WO2015160714A1/en active Application Filing
- 2015-04-13 CN CN202310673929.XA patent/CN116646315A/zh active Pending
- 2015-04-13 JP JP2016562495A patent/JP2017511610A/ja active Pending
- 2015-04-13 CN CN201580018939.3A patent/CN106233452B8/zh active Active
-
2016
- 2016-04-04 US US15/090,000 patent/US10032863B2/en active Active
-
2018
- 2018-07-05 US US16/027,522 patent/US10516019B2/en active Active
-
2019
- 2019-08-05 JP JP2019143488A patent/JP7137538B2/ja active Active
- 2019-12-27 JP JP2019238830A patent/JP6993547B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000332224A (ja) | 1999-04-30 | 2000-11-30 | Stmicroelectronics Srl | 集積回路構造の製造方法 |
JP2003332414A (ja) | 2002-05-13 | 2003-11-21 | Hynix Semiconductor Inc | 半導体素子の製造方法および半導体素子 |
JP2008159691A (ja) | 2006-12-21 | 2008-07-10 | Rohm Co Ltd | 窒化物半導体結晶成長基板、窒化物半導体素子および窒化物半導体結晶成長基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3132468B1 (en) | 2024-04-10 |
WO2015160714A1 (en) | 2015-10-22 |
US10032863B2 (en) | 2018-07-24 |
US20160218177A1 (en) | 2016-07-28 |
CN106233452B8 (zh) | 2023-08-15 |
JP2017511610A (ja) | 2017-04-20 |
US20150294902A1 (en) | 2015-10-15 |
CN106233452B (zh) | 2023-06-30 |
JP2019220696A (ja) | 2019-12-26 |
CN106233452A (zh) | 2016-12-14 |
EP3132468A1 (en) | 2017-02-22 |
US20180315816A1 (en) | 2018-11-01 |
JP2020061577A (ja) | 2020-04-16 |
JP7137538B2 (ja) | 2022-09-14 |
EP3132468A4 (en) | 2017-11-22 |
US9330959B2 (en) | 2016-05-03 |
CN116646315A (zh) | 2023-08-25 |
US10516019B2 (en) | 2019-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6993547B2 (ja) | 局地化されたシリコンエピタキシャルシード形成によるバルクウェハにおける隔離された半導体層 | |
US9536772B2 (en) | Fin structure of semiconductor device | |
US8936972B2 (en) | Epitaxially thickened doped or undoped core nanowire FET structure and method for increasing effective device width | |
TWI641085B (zh) | 具有等效nfet/pfet間隔物寛度之差動sg/eg間隔物整合及在fdsoi上致能高壓eg裝置之雙凸起源極汲極磊晶矽與三重氮化物間隔物整合 | |
US20150014807A1 (en) | Method of forming a shallow trench isolation structure | |
TW554472B (en) | A method for forming shallow trench isolation | |
JP2019091951A (ja) | 埋め込みエピタキシャルファセットにおけるシリサイド及びコンタクトの形成 | |
KR20060046020A (ko) | 반도체 장치 및 그 제조 방법 | |
JP5556851B2 (ja) | 半導体装置の製造方法 | |
CN103151264B (zh) | 一种半导体器件的制造方法 | |
US10886164B2 (en) | Isolated semiconductor layer over buried isolation layer | |
US10170330B2 (en) | Method for recessing a carbon-doped layer of a semiconductor structure | |
US9466520B2 (en) | Localized region of isolated silicon over recessed dielectric layer | |
US9312164B2 (en) | Localized region of isolated silicon over dielectric mesa | |
CN104425349B (zh) | 一种半导体器件的制造方法 | |
CN104425348A (zh) | 一种半导体器件的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20200106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200115 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200115 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201125 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210217 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20210218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210323 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210517 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210602 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210630 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210826 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211111 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6993547 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |