JP6991927B2 - Method of manufacturing substrate holding device, exposure device and article - Google Patents

Description

The present invention relates to a substrate holding device, an exposure device, and a method for manufacturing an article.

When manufacturing devices such as semiconductor elements and liquid crystal display elements using photolithography technology, an exposure device is used in which a mask pattern is projected onto a substrate by a projection optical system to transfer the pattern.

The device manufacturing step includes a step of applying a resist to the substrate, a step of transferring the pattern to the substrate by exposure, a step of developing the substrate to which the pattern is transferred, and the like. Generally, a step of applying a resist to a substrate and a step of developing a substrate on which a pattern is transferred are performed by a coater / developer or the like different from an exposure apparatus that transfers a pattern to the substrate by exposure.

In this way, in the device manufacturing process, the device is manufactured while the substrate is transferred between different devices. Each device is provided with a board holding mechanism for holding the board by adsorption or the like and transferring the board. The board holding mechanism is a base for holding the board and a lift pin for raising and lowering the board. It is common to include a mechanism.

Here, a gap is created between the base provided at the lower part of the substrate and the substrate elevating mechanism. Therefore, the substrate has a region in which the base and the substrate elevating mechanism are arranged below the substrate and a region in which they are not arranged.

In recent years, it has become common to manufacture devices using a transparent substrate through which exposure light is transmitted. When exposing a transparent substrate, the exposure light transmitted through the substrate moves up and down the base and the substrate. It is reflected by the mechanism, and the reflected light sensitizes the resist applied on the substrate. When the resist is exposed to the reflected light, uneven exposure occurs on the substrate.

Chinese Patent Application Publication No. 105045048

As a method for reducing the above-mentioned exposure unevenness, Patent Document 1 discloses a configuration in which reflection of exposure light is limited by providing an antireflection member in a gap under the substrate. The problem in Patent Document 1 is that the exposure light incident on the gap at the lower part of the substrate sensitizes the resist on the substrate as reflected light, and the exposure amount becomes excessive in the region on the substrate located above the gap. In the substrate holding device in Patent Document 1, in order to reduce the exposure amount in the region on the substrate located above the gap, the antireflection member is arranged in the gap.

On the other hand, the inventor of the present application has found that the exposure light incident on the gap in the lower part of the substrate proceeds to the lower part of the substrate holding device and is attenuated, and most of them do not reach the resist on the substrate. Therefore, it is an object of the present invention to reduce the above-mentioned exposure unevenness by re-entering the exposure light that has passed through the substrate and is incident on the gap under the substrate.

The substrate holding device of the present invention for solving the above problems is provided in the gap between the base for holding the substrate coated with the photosensitive material and the base, and is light transmitted through the substrate to expose the photosensitive material. It has a reflective member that reflects the light of a wavelength, and the upper surface of the reflective member is arranged at an angle with respect to the upper surface of the base, and the light reflected by the reflective member is transferred to the photosensitive material . It is characterized by reaching.

According to the present invention, a substrate holding device and an exposure device capable of reducing exposure unevenness can be obtained.

It is a schematic diagram of an exposure apparatus. It is a schematic diagram of a substrate holding mechanism. It is a figure which shows the 1st Embodiment of the base which constitutes the substrate holding mechanism. It is a figure which shows the 2nd Embodiment of the base which constitutes the substrate holding mechanism. It is a figure which shows the 3rd Embodiment of the base which constitutes the substrate holding mechanism. It is a schematic diagram which shows the occurrence mechanism of exposure unevenness. It is a figure which shows the relationship between the wavelength and the transmittance of light in a photosensitive material. It is a figure which shows the structure for reducing the exposure unevenness. It is a schematic diagram which shows the mechanism which reduces the exposure unevenness. It is a figure which shows the method of determining the inclination angle of the reflection member with respect to a base. It is a figure which shows the detail of a substrate holding mechanism. It is a figure which shows the structure of the reflection member in the modification.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The substrate holding device of the present invention is suitable for holding a transparent substrate such as a sapphire substrate or a glass substrate. The sapphire substrate is used as a substrate for an LED (Light Emitting Diode) element or the like. The glass substrate is used as a substrate for a liquid crystal panel or the like.

FIG. 1 is a schematic view showing a configuration of an exposure apparatus 1 as one aspect of the present embodiment. The exposure apparatus 1 is used to form a pattern on the substrate. The exposure device 1 includes a light source device 100 including a light source 110, an illumination optical system 200 for illuminating the original plate 310, and an original plate stage 300 holding the original plate 310. Further, the exposure apparatus 1 includes a projection optical system 400 that projects an image of the pattern of the original plate 310 onto the substrate 510 held on the substrate stage 500 (substrate holding device).

A high-pressure mercury lamp, an excimer laser, or the like is used as the light source 110. As general exposure light, g-ray (wavelength of about 436 nm) or near-ultraviolet light having a wavelength region of 100 nm to 400 nm is used. For example, g-line or i-line (wavelength about 365 nm), KrF excimer laser light (wavelength about 248 nm), ArF excima laser light (wavelength about 193 nm), F2 laser light (wavelength about 157 nm), etc. of an ultrahigh pressure mercury lamp are used. ..

The light emitted from the light source 110 is guided to the original plate 310 via the optical system 210 included in the illumination optical system 200. The projection optical system 400 includes an optical system 410 and an aperture stop 420, and projects the pattern of the original plate 310 onto the substrate 510 at a predetermined projection magnification. A photosensitive material (resist) having sensitivity to light of a specific wavelength is applied to the substrate 510, and when an image of the pattern of the original plate 310 is projected onto the resist, a latent image pattern is formed on the resist.

The substrate 510 is held by the substrate holding mechanism 500 as a substrate holding device. The substrate holding mechanism 500 holds the substrate 510 by vacuum suction, electrostatic suction, or the like using a suction pad (not shown). The detailed configuration of the substrate holding mechanism 500 will be described later.

In the present embodiment, the exposure apparatus 1 is a scanning exposure apparatus (scanner) that transfers the pattern of the original plate 310 to the substrate 510 while synchronously scanning the original plate 310 and the substrate 510 in the scanning direction. In the following, the vertical direction is the Z-axis direction, the scanning direction of the substrate 510 in the plane perpendicular to the Z-axis direction is the Y-axis direction, and the non-scanning direction which is the direction perpendicular to the Z-axis direction and the Y-axis direction is the X-axis direction. do.

The amount of light (exposure amount) projected onto the substrate 510 by the projection optical system 400 is an important factor for determining the line width of the pattern, and by exposing the resist on the substrate 510 with an appropriate exposure amount, the accuracy can be improved. It is possible to form a high pattern.

For example, when the same pattern is repeatedly formed in the pattern forming region on the substrate 510, it is preferable to perform exposure so that exposure unevenness does not occur in the entire area of the pattern forming region. Although it is possible to reduce the unevenness of the exposure amount projected on the substrate 510 by devising the configurations of the illumination optical system 200 and the projection optical system 400, so-called flare light is applied to the resist on the substrate 510. As a result, the amount of light incident on the resist may be uneven.

Here, it is assumed that among the light transmitted through the original plate 310, the light transmitted through the openings of the optical system 410 and the aperture diaphragm 420 included in the projection optical system 400 and irradiated to the resist on the substrate 510 is normal light. Light other than normal light is flare light.

(About the occurrence of uneven exposure)
Subsequently, the causes of exposure unevenness in the exposure apparatus will be described with reference to FIGS. 2 to 6. FIG. 2A shows a state in which the substrate 510 is held by the substrate holding mechanism 500. FIG. 2B shows how the substrate 510 is lifted in the Z-axis direction by the substrate elevating mechanism 522. The substrate 510 is conveyed by a substrate transfer device such as a transfer robot (not shown) in a state of being separated from the substrate holding mechanism 500 by the substrate elevating mechanism 522.

In FIG. 2A, the substrate holding mechanism 500 vacuum sucks the substrate 510 using a suction pad (not shown) located between the base 521 and the substrate 510. The suction pad is provided on the upper surface of the base 521. The holding method of the substrate 510 is not limited to vacuum suction, and the substrate 510 may be held by, for example, electrostatic suction. When the substrate 510 is exposed, the substrate 510 is held by the base 521 as shown in FIG. 2 (A).

The substrate elevating mechanism 522 is movable in the Z-axis direction, and when the substrate 510 is pulled away from the base 521, the substrate elevating mechanism 522 moves in the Z-axis direction and the substrate 510 is moved as shown in FIG. 2 (B). Is lifted upward in the Z-axis direction.

The substrate elevating mechanism 522 includes an elevating portion 522B that moves up and down in the Z-axis direction and a contact portion 522C that comes into contact with the substrate 510, and the upper surface of the contact portion 522C is an upper surface 522A. Since the contact portion 522C comes into contact with the substrate 510, the material of the contact portion 522C is determined in consideration of the fact that the substrate 510 is less likely to be scratched and the contact portion 522C is less likely to be worn due to contact with the substrate 510. The contact portion 522C is generally made of a resin material or the like.

Here, as shown in FIG. 2A, when the substrate 510 is held by the base 521, a slight gap is provided between the substrate 510 and the substrate elevating mechanism 522. As a result, it is possible to reduce the risk that the substrate 510 interferes with the substrate elevating mechanism 522 and the position of the substrate 510 changes in the Z-axis direction.

Next, the arrangement relationship between the base 521 and the substrate elevating mechanism 522 will be described with reference to FIGS. 3 to 5. FIG. 3 shows an example in which the base 521 constituting the substrate holding mechanism 500 is divided into a plurality of (eight) substrate holding portions in the XY plane, and a gap is provided between the substrate holding portions. The substrate holding portions 521a, b, c, and d are arranged on the positive side in the Y-axis direction, and the substrate elevating portions 522a, b, and c are provided in the gaps between them. Further, the substrate holding portions 521e, f, g, and h are arranged on the minus side in the Y-axis direction, and the substrate elevating portions 522d, e, and f are provided in the gaps between them. FIG. 3 shows an example in which a lift bar is arranged as a board elevating part.

In FIG. 4, the base 521 is divided into substrate holding portions 521a', b', c', and d'. Each of the substrate holding portions is provided with a substrate elevating portion 522a', b', c', d'. Further, a substrate elevating portion 522e'is provided in the gap between the substrate holding portions 521a'and 521b', and a substrate elevating portion 522f'is provided in the gap between the substrate holding portions 521c'and 521d'. Each board elevating part in FIG. 4 is composed of a lift bar.

Further, in FIG. 5, the base 521 is divided into the substrate holding portions 521a ″, b ″, c ″, d ″, e ″, and f ″. Each substrate holding portion is provided with a through hole, and a lift pin 522 as a substrate elevating mechanism that moves inside the through hole in the Z-axis direction is installed.

As described above, the substrate elevating mechanism 522 may be the lift bar type shown in FIGS. 3 or 4, or the lift pin type shown in FIG. In any case, the board elevating part constituting the board elevating mechanism 522 is arranged in the gap provided in the base 521. As described with reference to FIGS. 3 to 5, a gap is provided between the substrate holding portions and between the substrate holding portion and the substrate elevating portion, and the exposure light passing through the gap causes exposure unevenness. It becomes a factor of.

Subsequently, the mechanism by which the exposure unevenness occurs will be described with reference to FIG. FIG. 6 shows how the resist 511 coated on the substrate 510 is irradiated with the exposure light. The light beam 10 incident on the resist 511 from the space above the base 521 passes through the resist 511 and the substrate 510 and is reflected on the upper surface 521A of the base 521. The light rays 12 incident on the resist 511 from the space above the substrate elevating mechanism 522 pass through the resist 511 and the substrate 510 and are reflected by the upper part of the substrate elevating mechanism 522. On the other hand, the light ray 11 incident on the resist 511 from the upper part of the gap between the base 521 and the substrate elevating mechanism 522 passes through the resist 511 and the substrate 510.

Here, a part of the exposure light incident on the resist 511 is absorbed by the resist 511. The light absorption rate and transmittance differ depending on the wavelength of the exposure light and the optical characteristics of the resist 511. The transmittance of the exposure light with respect to the resist is determined as follows.

First, assuming that light is a one-dimensional plane wave propagating in the Z direction, the amplitude E (Z, t) of the plane wave at time t is

It is expressed as. k is the wave number and ω is the frequency. Using the complex index of refraction N, the frequency ω is

The amplitude E (Z, t) can be expressed as follows.

Furthermore, from ω = 2πc / λ

Will be.

Further, since the light energy I (Z, t) is obtained from the norm of the square of the amplitude E (Z, t) or the norm of the norm of the amplitude E (Z, t),

It is expressed as.

From here, when the light transmittance T is calculated,

Will be.

The light rays transmitted through the resist 511 according to the transmittance T calculated in this way pass through the substrate 510 and reach the upper part of the base 521 and the substrate elevating mechanism 522. FIG. 7 is a diagram showing the relationship between the wavelength of light and the transmittance in a specific resist. In an exposure apparatus using a mercury lamp, i-line (wavelength of about 365 nm), h-line (wavelength of about 405 nm), g-line (wavelength of about 436 nm) and the like are used as exposure light. In FIG. 7, the transmittance for the i-line is expressed as Ti, the transmittance for the h-line is expressed as Th, and the transmittance for the g-line is expressed as Tg. It can be seen that the transmittance value differs for each wavelength.

The light that reaches the upper part of the base 521 and the substrate elevating mechanism 522 is reflected by specular reflection and diffuse reflection on the reflecting surface. Normal reflection is a reflection whose reflection angle is determined by the angle of light incident on the reflecting surface, and the incident angle and reflection angle of light are generally equal to each other. Diffuse reflection is reflection that does not depend on the incident angle of the light incident on the reflecting surface, and the intensity of the light reflected from the perpendicular line of the reflecting surface at an angle θ depends on cos θ. Diffuse reflection is also called Lambertian reflection.

The light that is specularly or diffusely reflected on the upper surface of the base 521 or the substrate elevating mechanism 522 can be incident on the resist 511 as flare light after passing through the substrate 510. On the other hand, the light shown as the light beam 11 in FIG. 6 is incident on the gap between the base 521 and the substrate elevating mechanism 522, and most of the light is attenuated without being incident on the resist 511 again.

As described above, a region where a large amount of flare light is generated and a region where flare light is hardly generated are generated on the substrate 510. As described above, the flare light is generated according to the reflection characteristics of the upper surface of the base 521 and the substrate elevating mechanism 522, and it is difficult to sufficiently reduce the flare light. Since the amount of flare light incident on the resist 511 differs depending on the region on the substrate 510, exposure unevenness occurs as a result.

(About the method of reducing exposure unevenness)
Next, a method of reducing exposure unevenness will be described with reference to FIGS. 8 and 9. In FIG. 8, the above-mentioned exposure unevenness is reduced by providing the reflective member 523 at an angle with respect to the upper surface of the base 521 in the gap between the base 521 and the substrate elevating mechanism 522. Since the configurations other than the reflective member 523 in FIG. 8 are the same as the configurations shown in FIG. 2, the description thereof will be omitted. The reflective member 523 is made of a resin material such as acrylic or Teflon (registered trademark) or a metal material such as aluminum. Further, the member may be a member obtained by subjecting a metal material to a surface treatment such as plating. The reflective member 523 is arranged in a region below the contact portion 522C of the substrate elevating mechanism 522.

Subsequently, a mechanism for reducing exposure unevenness will be described with reference to FIG. 9. Since the optical paths of the light rays 10 and the light rays 12 are as shown in FIG. 6, the description thereof will be omitted here. The light ray 11 passes through the resist 511 and the substrate 510, reaches the upper surface 523A of the reflective member 523, and is reflected to the substrate side on the upper surface 523A.

As described above, on the upper surface 523A of the reflective member 523, light rays are reflected by specular reflection and diffuse reflection. The behavior of the light ray 41 that is specularly reflected by the upper surface 523A and the light ray 42 that is diffusely reflected by the upper surface 523A is determined by the regular reflectance and the diffuse reflectance of the upper surface 523A, respectively.

Here, the specular reflectance tends to vary greatly due to a manufacturing error of the reflective member 523 and the like. If the specular reflectance of the upper surface 523A of the reflective member 523 deviates from a desired value, the effect of reducing exposure unevenness, which will be described later, may not be sufficiently obtained. On the other hand, since the diffuse reflectance has less variation due to manufacturing errors and the like as compared with the specular reflectance, it becomes easier to obtain the effect of reducing the exposure unevenness by reducing the exposure unevenness by the light diffusely reflected by the upper surface 523A. ..

Therefore, in the present invention, by providing the reflective member 523 at an angle with respect to the upper surface of the base 521, it is difficult for the light that is specularly reflected by the upper surface 523A of the reflective member 523 to reach the resist 511 on the substrate 510. I have to. That is, in the present invention, the exposure unevenness is reduced mainly by the light diffusely reflected on the upper surface 523A of the reflective member 523.

As shown in FIG. 9, the reflecting member 523 is arranged at an angle with respect to the upper surface of the base 521 so that the light ray 41 specularly reflected on the upper surface 523A of the reflecting member 523 reaches the side surface of the base 521. Ru. The light rays 41 that reach the side surface of the base 521 are attenuated, and most of them do not reach the resist 11. On the other hand, the light beam 42, which is a part of the light diffusely reflected on the upper surface 523A of the reflective member 523, passes through the gap between the base 521 and the substrate elevating mechanism 522, passes through the substrate 510, and then passes through the substrate 511 to the resist 511. To reach.

As described above, the tilt angle of the reflecting member 523 with respect to the upper surface of the base 521 is set so that the light ray 41 specularly reflected by the upper surface 523A of the reflecting member 523 reaches the side surface of the base 521.

Subsequently, a method of determining the inclination angle θ of the reflective member 523 with respect to the upper surface of the base 521 will be described with reference to FIG. Here, the distance between the gap between the base 521 provided with the reflective member 523 and the substrate elevating mechanism 522 is W, and the vertical distance between the center of the upper surface 523A of the reflective member 523 and the upper surface 521A of the base 521 is d. Let θ be the tilt angle of the reflective member 523 with respect to the upper surface 521A of the base 521.

The light ray 21 perpendicularly incident on the center of the upper surface 523A is specularly reflected at a reflection angle of 2θ. Here, the condition for the specularly reflected light ray 41 to reach the side surface of the base 521 on the upper surface 523A of the reflecting member 523 is expressed by the following conditional expression.
W <d × | tan2θ |

in short,

or,

The inclination angle θ of the reflective member 523 with respect to the upper surface 521A of the base 521 may be set so as to satisfy the above.

As described above, by providing the reflective member 523 at an angle with respect to the upper surface of the base 521 in the gap between the base 521 and the substrate elevating mechanism 522, the resist 511 located above the gap is provided. However, flare light will be incident. Further, by appropriately setting the inclination angle θ of the reflection member 523 with respect to the base 521, it is possible to accurately estimate the amount of flare light incident on the resist 511.

The material of the reflective member 523 and the position of the reflective member 523 in the vertical direction are determined according to the amount of flare light to be incident on the resist 511 located above the gap between the base 521 and the substrate elevating mechanism 522. It is preferable to do so. As a result, the difference between the amount of light reflected by the base 521 and reaching the first resist region on the upper part of the base 521 and the amount of light reflected by the reflecting member 523 and reaching the second resist region on the upper part of the reflecting member 523. Becomes smaller. Further, the amount of light reflected by the substrate elevating mechanism 522 and reaching the third resist region on the upper part of the substrate elevating mechanism 522 and the amount of light reflected by the reflecting member 523 and reaching the second resist region on the upper part of the reflecting member 523. The difference becomes smaller.

As a result, the light amount distribution of the flare light applied to the resist 511 can be made uniform to some extent. The first resist region is exemplified as 511A in FIG. 8, the second resist region is exemplified as 511B in FIG. 8, and the third resist region is exemplified as 511C in FIG. This is the area to be resisted.

(Regarding the position adjustment of the reflective member)
As described above, in order to effectively reduce the exposure unevenness, it is preferable to provide a position adjusting mechanism for adjusting the position of the reflective member 523 in the Z-axis direction. The reflectance of the base 521, the substrate elevating mechanism 522, and the reflective member 523 is mainly determined by the physical property values of the material, but the reflectance may vary depending on manufacturing errors and the like. In addition, the reflectance may vary depending on the characteristics of the resist, the wavelength of the exposure light, and the process at the time of exposure. By driving the reflective member 523 in the Z-axis direction, it is possible to reduce the exposure unevenness that may occur due to the variation in the reflectance.

The details of the substrate holding device including the position adjusting mechanism will be described with reference to FIG. FIG. 11 is a diagram for extracting a part of FIG. 8 to explain the configuration of the position adjusting mechanism 524 and the like of the reflective member 523. As shown in FIG. 11, the reflective member 523 is arranged apart from the base 521 and the substrate elevating mechanism 522. The reflective member 523 is driven by the position adjusting mechanism 524 and can move in the Z-axis direction.

The base 521 and the position adjusting mechanism 524 are attached to the upper part of the top plate 525 on a movable stage (not shown) that can move in the X-axis direction and the Y-axis direction. The elevating part 522B constituting the board elevating mechanism 522 penetrates the top plate 525, and the elevating part 522B is driven in the Z-axis direction along the guide 526 by an actuator (not shown). Further, the position adjusting mechanism 524 is driven in the Z-axis direction by an actuator (not shown) provided on the top plate 525.

(Modification example)
In the above-described embodiment, an example in which the reflective member 523 is provided at an angle with respect to the upper surface of the base 521 in the gap between the base 521 and the substrate elevating mechanism 522 has been described. As a configuration for obtaining the same effect as that of the embodiment, as shown in FIG. 12, the upper surface of the reflective member 524 may have a sawtooth shape in which the inclined portion 524A is continuously provided.

As shown in FIGS. 12A and 12B, by forming the upper surface of the reflective member 524 into a sawtooth shape, the same effect as in FIG. 8 can be obtained. The specific shape of the upper surface of the reflective member 524 is determined as follows.

Here, the distance between the gap between the base 521 provided with the reflective member 524 and the substrate elevating mechanism 522 is W, the vertical distance between the center of the inclined portion 524A and the upper surface 521A of the base 521 is d, and the base 521. Let θ be the inclination angle of the inclined portion 524A with respect to the above.

The light ray 21 perpendicularly incident on the inclined portion 524A is specularly reflected at a reflection angle of 2θ. Here, the condition for the specularly reflected light ray 41 to reach the side surface of the base 521 in the inclined portion 524A is expressed by the following conditional expression.
W <d × | tan2θ |

in short,

or,

The inclination angle θ of the inclined portion 524A with respect to the upper surface 521A of the base 521 may be set so as to satisfy the above.

Further, in the above-described embodiment, the embodiment in which the reflective member 523 is arranged in the gap between the base 521 and the substrate elevating mechanism 522 has been described, but as shown in FIGS. 3 to 5, the substrate holding portions are connected to each other. The reflective member 523 may be arranged in the gap between the two. Even if the board elevating mechanism 522 is not arranged between the board holding portions, if there is a gap between the board holding portions, the same problems as those described above may occur. Is.

Although the example in which the substrate holding device is applied to the scanner as the exposure device 1 has been described so far, for example, for a stepper in which the original plate 310 is fixed and the pattern of the original plate 310 is projected onto the substrate 510. The substrate holding device of the present invention can be applied.

(Manufacturing method of goods)
Next, a method of manufacturing an article (semiconductor integrated circuit element, liquid crystal display element, etc.) using the above-mentioned exposure apparatus will be described. The method for manufacturing an article includes a step of irradiating a substrate held by the substrate holding device according to the present invention with exposure light to form a pattern, and processing (development, etching, etc.) the substrate on which the pattern is formed. ) Is performed. By using the substrate holding device according to the present invention, it is possible to effectively reduce the exposure unevenness, and as a result, the pattern formation accuracy on the substrate can be improved.

The method for producing the present article is advantageous in at least one of the performance, quality, productivity and production cost of the article as compared with the conventional method. Alternatively, the above-mentioned exposure apparatus can provide an article such as a high-quality device (semiconductor integrated circuit element, liquid crystal display element, etc.).

Although the preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and modifications can be made within the scope of the gist thereof.

510 Substrate 521 Base 523 Reflective member

Claims (18)

A base that holds the substrate coated with the photosensitive material, and
It has a reflective member provided in the gap of the base, which is light transmitted through the substrate and reflects the light having a wavelength that sensitizes the photosensitive material.
The upper surface of the reflective member is arranged at an angle with respect to the upper surface of the base.
A substrate holding device characterized in that the light reflected by the reflective member reaches the photosensitive material . A base that holds the substrate coated with the photosensitive material, and
A reflective member that reflects the light having a wavelength that is the light transmitted through the substrate and sensitizes the photosensitive material, and the light.
It has an elevating mechanism that elevates and elevates the substrate in the vertical direction.
The reflective member is provided in a gap between the base and the elevating mechanism.
The upper surface of the reflective member is arranged at an angle with respect to the upper surface of the base.
A substrate holding device characterized in that the light reflected by the reflective member reaches the photosensitive material . The difference between the amount of light reflected by the reflective member and reaching the second resist region on the upper part of the reflective member and the amount of light reflected by the elevating mechanism and reaching the third resist region on the upper part of the elevating mechanism becomes small. The substrate holding device according to claim 2, wherein the reflective member is provided. The difference between the amount of light reflected by the base and reaching the first resist region on the upper part of the base and the amount of light reflected by the reflecting member and reaching the second resist region on the upper part of the reflecting member becomes small. The substrate holding device according to any one of claims 1 to 3 , wherein the reflective member is provided. The distance between the gaps provided with the reflective member is W, the vertical distance between the center of the upper surface of the reflective member and the upper surface of the base is d, and the inclination angle of the reflective member with respect to the upper surface of the base is θ. When you do
W <d × | tan2θ |
The substrate holding device according to any one of claims 1 to 4, wherein the conditional expression is satisfied. The substrate holding device according to any one of claims 1 to 4, wherein the upper surface of the reflective member has a sawtooth shape in which inclined portions are continuously provided. The distance between the gaps provided with the reflective members is W, the vertical distance between the center of the upper surface of the inclined portion and the upper surface of the base is d, and the inclination angle of the inclined portion with respect to the upper surface of the base is θ. When you do
W <d × | tan2θ |
The substrate holding device according to claim 6, wherein the conditional expression is satisfied. The method according to any one of claims 1 to 7, wherein the reflecting member reflects light that is specularly reflected on the upper surface of the reflecting member among the light transmitted through the substrate to the side surface of the base. Board holding device. The substrate holding device according to any one of claims 1 to 8, wherein the reflective member is provided so that the difference in the amount of light received in each region of the substrate is small. The substrate holding device according to any one of claims 1 to 9, wherein the reflective member is a material containing at least one of acrylic, Teflon (registered trademark), and aluminum. The substrate holding device according to any one of claims 1 to 10, wherein the reflective member is provided below the upper surface of the base. The substrate holding device according to any one of claims 1 to 11, wherein the reflective member is movable in the vertical direction. The substrate holding device according to claim 12, further comprising an adjusting mechanism for moving the reflective member in the vertical direction. The substrate holding device according to any one of claims 1 to 13, wherein the base is provided with a through hole, and the reflective member is provided inside the through hole. The base includes a plurality of board holding portions for holding the board.
The substrate holding device according to any one of claims 1 to 14, wherein the reflective member is provided in a gap between the plurality of substrate holding portions. The substrate holding device according to any one of claims 1 to 15, wherein the substrate is a sapphire substrate or a glass substrate. An exposure device that transfers the pattern of the original plate to the substrate using exposure light.
It is characterized in that the pattern of the original plate is transferred to the transparent substrate in a state where the transparent substrate having the property of transmitting exposure light is held by the substrate holding device according to any one of claims 1 to 16. Exposure device. An exposure step of exposing a substrate using the exposure apparatus according to claim 17.
A development step of developing the substrate exposed in the exposure step is included.
A method for manufacturing an article, which comprises manufacturing an article from the substrate developed in the developing step.

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