JP2000299273A - Peripheral aligner and its method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inexpensive optical edge beam remover apparatus and improve the throughout inexpensively by performing exposure while overlapping a first lighting region and a second lighting region, whose sizes are different, partially on a substrate. SOLUTION: A peripheral aligner has two lighting units 1A and 1B for forming exposing regions 22A and 22B on two sides of a rectangular board 22. The unit 1A forms a lighting region ILA having such a shape as to cover the region 22A to implement collective exposure of the region 22A on the board 22. Members constituting the unit 1A are held stationary during exposure to the region 22A. The region ILA is stationary with respect to the board 22 during the exposure. Light from a light source 10A formed of a vetrahigh pressure mercury lamp is converged by an elliptic mirror 11A arranged such that the light source 10A is arranged at a first focal position, and forms a light source image at a second focal position. Light from the light source image is substantially collimated by a collimator lens 14A, and injected into an optical integrator 15A.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a peripheral exposure apparatus and method for exposing and removing unnecessary photosensitive material such as a resist around a substrate used for manufacturing devices such as semiconductor elements and liquid crystal display elements. In particular, the present invention relates to an edge exposure apparatus and method suitable for edge exposure on a large rectangular substrate such as a liquid crystal display element.

[0002]

2. Description of the Related Art A conventional peripheral exposure apparatus of this type has a configuration as described in Japanese Patent Laid-Open No. 6-283406. An ultrahigh-pressure mercury lamp is used as a light source, an optical fiber is arranged at a second focal position by an elliptical mirror, and exposure light is guided onto a substrate by an optical fiber formed in a shape of a slit on the emission side to perform exposure. The optical fiber performs exposure by scanning over the substrate. In the scanning direction, there is a guide for scanning, and the optical fiber is controlled so as to move at a substantially constant speed.The emission side of this optical fiber is branched into two, and each emission end is directed in the same direction of the slit-shaped square substrate. It is configured to scan. When exposing in the direction orthogonal to the scanning of the substrate,
A configuration is adopted in which exposure is performed by rotating the lens by an angle.

[0003]

However, in recent years, the use of special photosensitive materials, such as photosensitive resins, having a high sensitivity to light having a wavelength of 400 nm or less, has been increasingly used for liquid crystal display elements. The size of substrates has been increasing year by year. Recently, substrates of about 600 mm × 750 mm have been frequently used.
Substrates of about 0 mm square and about 1000 mm square have been studied.

As described above, in recent years, there is a necessity to use light of 400 nm or less, and furthermore, there is a demand to cope with a large substrate such as 1 m square. In the case of a peripheral exposure apparatus as described in the conventional example, since an optical fiber is used, in order to use light having a wavelength of 400 nm or less, the fiber must be made of quartz fiber. In general, since a quartz fiber has a smaller light taking-in angle than a multi-component fiber, a long and thick quartz fiber is required to cope with a large-sized substrate as a fiber, which is expensive. In addition, due to the increase in the size of the substrate itself, it is necessary to cope with a large exposure width for peripheral exposure. For example, in order to expose the outer periphery of the substrate to 100 mm, at least the width of the fiber is also 100 m.
A width of m is required. Assuming that the slit shape of the fiber is, for example, 5 mm × 100 mm, the diameter Φ1 on the incident side of the fiber becomes Φ1 = 2 × √ (2 × 5 × 100 / π) = 35.7 mm in consideration of two branches on the exit side. In order to expose the outer periphery of the substrate, the substrate becomes long and large in diameter, which is expensive and extremely inexpensive. Furthermore, if a conventional peripheral exposure apparatus is used to cope with a large substrate, it is necessary to make the thick fiber itself run around on the substrate, so that stress may be applied to the fiber itself and the fiber may be disconnected. Come. If it is inexpensive, it is possible to replace it as a replacement part, but it is expensive but also difficult.

Further, the thickness of the resist on the substrate which needs to be removed by performing the peripheral exposure is not uniform, and the thickness near the peripheral portion of the substrate tends to be larger than that at the central portion. Therefore, when the peripheral exposure is to be performed on a portion having a large film thickness, it is necessary to increase the amount of exposure energy to this portion. Here, in the case where a large exposure area is required, if an attempt is made to increase the exposure amount of the outer peripheral portion of the substrate, the volume of the fiber further increases in the conventional apparatus,
Naturally, a problem such as an increase in cost occurs.

Therefore, in view of the above problems, the present invention is relatively easy and inexpensive even for a large substrate even when light of 400 nm or less is used as the exposure light, and the cost is reduced. It is an object of the present invention to provide a peripheral exposure apparatus capable of improving the throughput without using the same and performing favorable peripheral exposure even when the photosensitive material has an uneven film thickness.

[0007]

In order to achieve the above-mentioned object, a peripheral exposure apparatus according to the present invention is directed to an area exposing a predetermined circuit pattern on a photosensitive material applied to a rectangular substrate. A peripheral exposure apparatus that irradiates different regions with exposure light, comprising: a light source that supplies exposure light; and an illumination optical system that directs exposure light from the light source to the substrate. The illumination optical system includes a first partial illumination system that forms a first irradiation area on the substrate, and a second partial illumination system that forms a second irradiation area on the substrate that is separated from the first irradiation area. Wherein the first and second irradiation areas are different in size from each other, and a part of the first and second irradiation areas is exposed on the substrate in a superimposed manner.

[0008] In the peripheral exposure apparatus according to the above configuration, the peripheral exposure apparatus is disposed between at least one of the first and second partial illumination systems and the substrate to define an irradiation area on the substrate. It is preferable to further include an exposure area defining unit that performs the exposure. Further, in the present invention, it is preferable that a side on the substrate where the first irradiation area is formed is different from a side on the substrate where the second irradiation area is formed.

Preferably, the apparatus further comprises a substrate rotating means for rotating the substrate at an integral multiple of about 90 °. In the case of using the substrate rotating means, the peripheral exposure by the first and second irradiation areas and the rotation of the substrate are alternately performed, so that the first and second irradiation areas partially overlap on the substrate. And is exposed. Preferably, the light source includes a first light source and a second light source different from the first light source. At this time, exposure light from the first light source is guided to the first partial illumination system, Preferably, the exposure light from the second light source is guided to the second partial illumination system.

It is preferable that the apparatus further comprises a light beam branching unit for branching the exposure light from the light source and guiding it to at least the first partial illumination system and the second partial illumination optical system. It is preferable that at least one of the first and second irradiation areas and the substrate relatively move during exposure of the substrate.

Preferably, at least one of the first and second irradiation areas is stationary with respect to the substrate during exposure. Further, when the substrate rotating means is provided, it is preferable to form a third irradiation area in a region including a center of rotation by the substrate rotating means.
At this time, it is preferable that the third irradiation region is formed by the first partial illumination system or a third partial illumination system different from the first and second partial illumination systems. At this time, it is preferable that the width of the third irradiation area is set to be larger than 幅 of the width in the short direction of the exposure area formed corresponding to the third irradiation area.

Further, the present invention provides a first step of applying the photosensitive material to the rectangular substrate; and a second step of transferring a circuit pattern to a predetermined area on the photosensitive material on the rectangular substrate. A third step of irradiating the region to which the circuit pattern is transferred with exposure light using the peripheral exposure apparatus according to any one of the above-described configurations, wherein the third step comprises: , Before or after the second step.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a substrate peripheral exposure apparatus used for manufacturing a liquid crystal display substrate will be described below in detail with reference to the drawings. FIG. 1 is an apparatus schematic diagram showing a first embodiment of a peripheral exposure apparatus of the present invention. In FIG. 1, an XYZ coordinate system is used.

The peripheral exposure apparatus shown in FIG.
Has two illumination units 1A and 1B for forming exposure areas 22A and 22B on each of the two sides. Here, the illumination unit 1A forms an irradiation area ILA having a shape covering the exposure area 22A in order to collectively expose the exposure area 22A on the substrate 22. This irradiation unit 1
Each of the members constituting A is in a stationary state when the exposure area 22A is exposed. That is, the irradiation area ILA is stationary with respect to the substrate 22 during the exposure operation.

In FIG. 1, light from a light source 10A, for example, an ultra-high pressure mercury lamp, is placed at a first focal position.
A is condensed by an elliptical mirror 11A arranged so that A is located, and a light in a predetermined wavelength range is reflected by a dichroic mirror 12A that reflects only light having a wavelength of 400 nm or less, for example, and the second focal point of the elliptical mirror 11A. A light source image is formed at the position. The light from the light source image is transmitted to the collimator lens 14A.
After being substantially collimated, the light enters the optical integrator 15A. Note that a shutter 13A for turning ON / OFF the exposure is provided near the second focal position of the elliptical mirror 11A.

In the present embodiment, a fly-eye lens in which a plurality of elements are integrated in a matrix is employed as the optical integrator 15A.
Here, the cross-sectional shape of each lens element constituting the fly-eye lens 15A is a rectangular shape similar to the irradiation area ILA. The plurality of elements are usually each constituted by a positive lens, and a plurality of light source images (secondary light sources) are provided on their emission sides.
To form The light that has passed through the fly-eye lens 15A is
The light is guided onto the substrate via a concave mirror 16A as a condenser optical system. The concave mirror 16A has an optical axis defined by the center of the effective area (area to which the light beam is irradiated) and the center of curvature of the concave surface, and the optical axis of the concave mirror 16A and the fly-eye lens 1
The optical axis of 5A (collimator lens 14A) forms a predetermined angle. That is, the concave mirror 16A is used off-axis.

Each of the rectangular entrance surfaces of the plurality of elements of the fly-eye lens 15A forms an image on the rectangular substrate 22 at a predetermined magnification by the plurality of elements and the concave mirror 16A. Thereby, the square substrate 22
A substantially rectangular irradiation area ILA is formed thereon. Thus, the first irradiation unit 1A in the present embodiment
Is a light source 10, an elliptical mirror 11A, a dichroic mirror 1
It comprises a shutter 2A, a shutter 13A, a collimating lens 14A, an optical integrator 15A, and a concave mirror 16A, and among the above-mentioned members, members from the elliptical mirror 11A to the concave mirror 16A constitute a first partial illumination system.

Then, between the concave mirror 16A and the substrate 22,
That is, the irradiation unit 1A (first partial optical system) and the substrate 2
Between them, a blind 17A as an exposure area defining means for defining the shape of the irradiation area ILA is arranged. The blind 17A of the present embodiment is configured to be movable along the X direction in the figure, and
The width in the X direction of the exposure region 22 </ b> A formed on the substrate 2 can be made variable.

In this embodiment, the irradiation unit 1A
For example, 700 to 10 depending on the irradiation area ILA formed by
To collectively expose one side of a large substrate of about 00 mm, the distance between the fly-eye lens 15A and the concave mirror 16A is made as short as possible to reduce the size of the optical system, particularly the concave mirror 16A. In addition, since the purpose of the irradiation unit 1A of the present embodiment is to simply expose unnecessary peripheral resists, the irradiation unit 1A is a non-telecentric optical system on the substrate side. For example, the size of the area (irradiation area ILA) that can be exposed by the irradiation unit 1A is 700 × 1
Consider the case of a 00 mm rectangular shape. In this case, it is necessary to accurately expose an end (edge) on the circuit pattern side (−X direction side) of the irradiation area ILA defined by the blind 17A on the substrate 22. In this direction (X Direction) corresponds to the short side direction of the irradiation area ILA. Even if the irradiation unit 1A is non-telecentric on the substrate side, the image height becomes small, so that the inclination angle of the principal ray falls within a small range.

The position of the blind 17A due to the non-telecentric irradiation optical system and the irradiation area I
Deviation from LA edge position (edge telecentricity error)
Can be corrected by the following method. First, the position of the blind 17A in the XY plane and the blind 17A
The relationship between the position on the XY plane of the end of the irradiation area ILA on the circuit pattern side defined by A is obtained in advance,
This relationship is stored in a predetermined storage unit. By performing offset management between the actual exposure position (the position of the end of the irradiation area ILA) and the setting position of the blind 17A based on the stored relationship, more accurate exposure position management can be performed. Becomes possible.

If the distance between the concave mirror 16A and the substrate 22 is set to be large and the focal length of the concave mirror 16A itself is set to be long, the numerical aperture (N.A.)
And the blur at the edge of the end of the irradiation area ILA limited by the blind 17A can be reduced. In this embodiment, the position of the irradiation area ILA itself in the X direction can be changed by providing the concave mirror 16A so as to be rotatable about an axis in the YZ plane.

Next, the second irradiation unit 1B will be described. In FIG. 1, light from a light source 10B composed of a small ultra-high-pressure mercury lamp of about 100 to 250 watts is reflected and condensed by an elliptical mirror 11B arranged so that the light source 10B is located at a first focal position. After passing through a dichroic filter 18B for passing only light of the following wavelengths, the light is collected near the second focal position of the elliptical mirror 11B. Note that exposure is turned on near the second focal position of the elliptical mirror 11B (between the elliptical mirror 11B and the rod 19b).
A shutter 13B for performing / OFF is provided.

The light that has passed through the dichroic filter 18B is incident on a rod 19B having an incident end face positioned near the second focal point of the elliptical mirror 11B, and after being repeatedly reflected on the inner wall of the rod, the light is reflected near the substrate 22 (substrate). The light is emitted from the emission end positioned at a position where a small gap is formed between the substrate 22 and the substrate 22 and reaches the substrate 22. Here, rod 1
The shape of the emission end of 9B is substantially similar to the irradiation area ILB formed on the substrate 22. For example, the substrate 22
Assuming that the resist thickness increases in the region of the outermost periphery of 5 mm, the rod is 5 mm square or more.

The light source 10B, the elliptical mirror 11B, the shutter 13B, the dichroic filter 18B, and the rod 19B are housed in a lamp house 20B.
The lamp house 20B is provided movably along a linear guide 21B extending in the Y direction in the figure. Here, when the shutter 13B is opened and the substrate 22 is irradiated with exposure light while moving the lamp house 20B along the linear guide 21B, the irradiation area ILB on the substrate 22 is obtained.
Move along the Y direction in the figure, and the exposure region 22B can be formed over a predetermined width in the X direction. As described above, if the rod 19B is 5 mm square, the substrate 22
On B, an exposure area 22B having a width of about 5 mm in the X direction is scanned and exposed.

The irradiation unit 1B as a scanning type exposure unit is configured to be movable in the X direction in the figure in order to cope with exposure to the vertical and horizontal sides of a rectangular substrate having different vertical and horizontal sizes. Thus, the position of the irradiation area ILB in the X direction can be adjusted. At this time, the lamp house 20B may be attached to a linear guide (Y-direction guide) 21B via an X-direction guide that holds the lamp house 20B so as to be movable in the X direction, and the linear guide 21B itself can be moved in the X direction. To X
It may be held by a direction guide.

Next, the exposure operation will be described. First,
The substrate 22 is a loader arm (load arm) not shown.
Is carried into the apparatus. Here, although not shown in FIG. 1, a substrate holder provided with pins that can move up and down (movable in the Z direction) is located at a substrate mounting position in the peripheral exposure apparatus. Then, the load arm places the substrate on the pins on the substrate holder. After the load arm retreats, the pins on the substrate holder move downward, and the substrate 22 is sucked on the holder. A reference pin for positioning the substrate 22 in the XY plane is provided on or around the substrate holder. When the load arm places the substrate 22 on the pins on the substrate holder, Is pressed against the reference pin to align the substrate.

In the present embodiment, a substrate rotating unit 23 for rotating the substrate 22 (substrate holder on which the substrate 22 is placed) about the Z axis is provided, and the substrate 22 is rotated by an integer multiple of 90 ° by the substrate rotating unit 23. (90 °, 180 °, 2
70 °, 360 °). In positioning the substrate, after measuring the position of the substrate 22 using a potentiometer or the like, the substrate may be corrected. For example, the rotation of the substrate holder may be adjusted, or the guide itself for scanning may be used. You may adjust the rotation or apply correction depending on the position of the blind. In this case, the substrate holder is configured to be finely movable in a rotation direction (θ direction) around the XY directions and the Z axis.

Here, the substrate 17 is placed on the blind 17A disposed between the irradiation unit 1A and the substrate 22 in order to avoid interference with the substrate 22 when the load arm loads and unloads the substrate. 10m to position
It is installed about m above (+ Z direction). The irradiation area ILA depends on the distance between the blind 17A and the substrate 22.
Since the degree of edge blur, that is, the edge accuracy is determined, when strict edge accuracy is required, the blind 1
7A needs to be as close to the substrate 22 as possible. In such a case, the blind 17A is configured to be retractable in the XY plane such that the blind 17A is at a position deviated from the loading path (unloading path) of the substrate 22 when loading and unloading the substrate 22, or the blind 17A is Z Substrate 2 provided movably in the direction
2 should not be interfered.

Next, the blind 17A is moved so that the width (width in the X direction) of the irradiation area on the substrate 22 becomes a desired value. Then, the shutters 13A and 13B in each of the irradiation units 1A and 1B are opened to start the peripheral exposure. Next, an exposure operation in the irradiation unit 1B as a scanning exposure unit will be described. In the irradiation unit 1B, there is no mechanism for variably setting the width of the exposure region (width of the irradiation region) such as the blind 17A provided on the irradiation unit 1A side, and the irradiation end surface of the rod 19B in the irradiation unit 1B is not provided. The width of the exposure region (the width of the irradiation region ILB in the X direction) is set according to the shape.

Since the irradiation unit 1B is arranged close to the substrate 22, there is a possibility that the substrate 22 and the irradiation unit 1B may interfere when the substrate 22 is loaded or unloaded. It is preferable that the irradiation unit 1B be retracted to a position on the XY plane that does not interfere with the substrate 22 when the substrate 22 is loaded and unloaded. Further, the substrate holder on which the substrate 22 is placed is moved up and down (Z
If the mechanism is configured to be movable in the direction, the substrate 22 may be loaded and unloaded while the substrate holder is lowered (in a state where the distance between the irradiation unit 1B and the substrate 22 is increased). Further, the lamp house 20B itself may be configured to move up and down.

After the substrate 22 is placed on the substrate holder, the emission end face (irradiation area ILB) of the rod 19B of the irradiation unit 1B is moved to the end of the substrate 22. After that, the shutter 13B is opened and the irradiation area ILB is
The irradiation unit 1B is moved in the Y direction while being formed on the substrate 2, and the irradiation region ILB is scanned along the side of the substrate 22. At this time, the moving speed of the irradiation unit 1B (the scanning speed of the irradiation area ILB) changes the substrate 22 (the upper photosensitive material).
(Resist)) is determined.

Here, the control of the exposure amount in the irradiation unit 1A (the time during which the shutter 13A is opened) is performed by measuring the illuminance using an illuminance sensor arranged near the surface of the substrate holder on which the substrate 22 is placed. , By calculating the time required to achieve the exposure amount required for the substrate 22 (the photosensitive material applied thereon). The irradiation unit 1B
(Control of the moving speed of the irradiation unit 1B) is performed by measuring the illuminance using an illuminance sensor arranged near the surface of the substrate holder on which the substrate 22 is placed.
This is performed by calculating a scanning speed (moving speed) for achieving an exposure amount necessary for (the photosensitive material applied thereon).

The illuminance sensor is replaced with the irradiation unit 1 instead of the structure provided adjacent to the substrate holder as described above.
A part of the light passing through the light paths A and 1B may be extracted and guided to the illuminance sensor. Further, it may be provided on a substrate holder. Also, when measuring illuminance,
Monitoring during exposure may be performed, but since the purpose is to expose unnecessary resist, a configuration in which measurement is performed once for a plurality of sheets may be employed.

Next, a procedure for forming an exposure area on the substrate 22 will be described with reference to FIG. In the following description, it is assumed that the substrate rotating unit 23 rotates the substrate 22 about the center of the substrate 22 as an axis. In FIG. 2, first, an exposure area 221B on the substrate 22 is formed using the irradiation unit 1B while forming an exposure area 221A on the substrate 22 using the irradiation unit 1A. Next, the substrate 22 is moved 90 degrees in the XY plane by the substrate rotation unit 23.
Rotate °. In the example of FIG. 2, since the length and width of the substrate 22 are different, the concave mirror 1 in the irradiation unit 1A
By rotating 6A, the irradiation area ILA is moved in the + X direction, the lamp house 20B in the irradiation unit 1B is moved in the -X direction, and the irradiation area ILB is moved in the -X direction. Thereafter, an exposure area 222A on the substrate 22 is formed using the irradiation unit 1A, and an exposure area 222B on the substrate 22 is formed using the irradiation unit 1B.

Then, the substrate 22 is rotated by 90 ° by the substrate rotating unit 23, and the X of each of the irradiation units 1A and 1B is adjusted.
(Position in the X direction of the irradiation areas ILA and ILB)
Is returned to the original position, the exposure area 223A is changed by the irradiation unit 1A, and the exposure area 223 is changed by the irradiation unit 1B.
B are respectively formed. Finally, the substrate rotation unit 23
The substrate 22 is rotated by 90 ° by using
A, 1B position in the X direction (X of irradiation area ILA, ILB)
Direction position) is changed to a second exposure position (exposure area 222A,
After the exposure unit 224A is moved to the position at the time of exposure to the exposure unit 222B, the exposure area 224A is moved by the irradiation unit 1A.
To form exposure regions 224B.

By this exposure operation, an exposure area 221A and an exposure area 223B are formed on a predetermined side of the substrate 22 in a superimposed state.
2A and the exposure region 224B are formed in an overlapping state,
An exposure area 223A and an exposure area 221B are formed in an overlapping state on a side opposite to the predetermined side, and an exposure area 224A and an exposure area 222B are formed in an overlapping state on the remaining sides. Here, in the region where the two exposure regions overlap, the exposure energy becomes larger than that in the region where one exposure region is formed, and even if the photosensitive material is thicker,
Exposure energy sufficient to remove the photosensitive material is provided.

If the substrate 22 is further rotated by 90 ° by the substrate rotation unit 23 after the fourth exposure,
The substrate 22 can be carried out in the same direction as the direction at the time of carrying in. In the above-described example, the irradiation area ILA is moved in the X direction in response to the different exposure positions on the long side and the short side of the substrate 22.
The maximum width in the direction (the width in the X direction of the irradiation area ILA when there is no blind 17A) is determined by the width of the irradiation area required on the substrate 22 and the long side and the short side of the rectangular substrate 22. It is set larger than the sum of 1/2 of the difference in length, and the movable range of the blind 17A is set to be larger than the sum of 1/2 of the difference in length between the long side and the short side of the rectangular substrate 22. You can set it larger.

For example, if the size of the substrate 22 is 700 × 800
Consider the case of a rectangular shape of mm. When the substrate is rotated at the center of the substrate 22 to perform exposure on sides orthogonal to each other, the position of the irradiation area when exposing the 800 mm side (the long side of the substrate 22) and the 700 mm side (the substrate 22) The difference in the X direction from the position of the irradiation area when exposing (short side of) is 50 mm each. For example, 800mm
When the substrate 22 is rotated and the side (short side) on the 700 mm side is exposed after the peripheral exposure on the side (long side),
It is necessary to move the position of the irradiation area inward by 50 mm on each side. However, if the maximum width of the irradiation area ILA in the X direction and the movable range of the blind 17A are set as described above, it is possible to set the position of the irradiation area ILA in the X direction only by moving the blind 17A. Therefore, it is not necessary to move the concave mirror in the irradiation unit 1A, and each optical member in the irradiation unit 1A can be fixedly arranged.

In the above example, the substrate is rotated by 90 ° after the peripheral exposure on the substrate 22.
° may be rotated. The operation in this case will be briefly described below. In FIG. 2, first, an exposure area 221B on the substrate 22 is formed using the irradiation unit 1B while forming an exposure area 221A on the substrate 22 using the irradiation unit 1A. Next, the substrate 22 is rotated by 180 ° in the XY plane by the substrate rotation unit 23. Thereafter, an exposure area 223A on the substrate 22 is formed using the irradiation unit 1A, and an exposure area 223B on the substrate 22 is formed using the irradiation unit 1B.

Thereafter, the substrate 22 is rotated by 90 ° using the substrate rotation unit 23, the concave mirror 16A in the irradiation unit 1A is rotated to move the irradiation area ILA in the + X direction, and the lamp house 20B in the irradiation unit 1B is moved. The irradiation area ILB is moved in the −X direction by moving in the −X direction. Then, the irradiation area 222A is irradiated by the irradiation unit 1A.
Is formed in the exposure area 222B by the irradiation unit 1B.

In the above-described exposure operation, it is preferable that the substrate 22 is rotated by 90 ° after the exposure of the exposure regions 222A and 222B, and the substrate 22 is unloaded in the same posture as when the substrate is loaded. When the square substrate 22 has a square shape, the irradiation units 1A and 1B (illumination regions ILA and IL
It is not necessary to move B) in the X direction.

Next, numerical values of an example of the exposure time on the substrate 22 will be briefly described. The size of the substrate 22 is 700 m
As an m-square, a region of 5 mm width from the outer periphery of the substrate 22 is exposed at an exposure amount of 100 mJ / cm ² , and a region inside the region and extending from the outer periphery to a width of 100 mm at an exposure amount of 50 mJ / cm ² Consider the case of exposure.

In this case, an area to be subjected to batch exposure (static exposure) using the irradiation unit 1A is set at 100
mm width and the exposure amount to this area is 50 mJ.
/ Cm ² , the width of the region to be scanned and exposed using the irradiation unit 1B is set to 5 mm from the outer periphery of the substrate 22, and the amount of exposure to this region is set to 50 mJ / cm ^2. Can be exposed at an exposure amount of 100 mJ / cm ² to an area having a width of 5 mm, and an exposure amount of 100 mJ / c can be applied to an area having a width of 100 mm from the inner periphery of this area.
It can be exposed in m ^2.

Further, the irradiation unit 1 in the present embodiment
In A, the irradiation optical system using the concave mirror 16A is described as an example, but instead of the concave mirror 16A, a combination of a lens system and a plane mirror, a combination of a lens system and a concave mirror, and a combination of a lens system and a convex mirror are used. Only the lens system can be an optical system using a Fresnel lens. Although the fly-eye lens is used as the optical integrator, a rectangular rod integrator whose exit surface shape is similar to the exposure field or a random fiber bundle may be used.

Next, a second embodiment according to the present invention will be described with reference to FIG. In FIG. 3, an XYZ coordinate system is adopted as in FIG. 1, and members having the same functions as those in FIG. 1 are denoted by the same reference numerals. In FIG. 3, the peripheral exposure apparatus according to the second embodiment includes an irradiation area IL having a width in the X direction on the substrate 22 of, for example, about 100 mm.
A, and an irradiation unit 2A capable of scanning the irradiation area ILA in the Y direction, and an irradiation area ILB on the substrate 22 having a width in the X direction of, for example, about 30 mm, and forming the irradiation area ILB in the Y direction. And an irradiation unit 2B capable of scanning the Note that, in FIG.
The illustration of the substrate rotation unit that rotates each time is omitted.

In the second embodiment, the irradiation unit 2A
The difference between the irradiation unit 2B and the irradiation unit 2B is only based on the difference between the sizes of the irradiation regions ILA and ILB formed on the substrate 22, and the functions thereof are the same. Only the explanation is represented. FIG.
, The configurations of the light source 10A, the elliptical mirror 11A, and the dichroic mirror 12A are the same as those in FIG. Then, the light from the elliptical mirror 11A via the dichroic mirror 12A is condensed at the second focal position to form a light source image, and then the rod-type integrator whose incident end face is positioned near the second focal position (Internal reflection type integrator) It is incident on 19A. This rod-type integrator 19A is similar to the rod 1 described with reference to FIG.
9B has the same function as that of FIG. 9B (a function of forming a uniform illuminance distribution on the exit end face by repeatedly reflecting an incident light beam on the inner surface). Here, the emission end face 19A of the rod-type integrator corresponds to the irradiation area IL formed on the substrate 22.
It has a shape similar to A.

On the exit side of the rod-type integrator 19A, a relay optical system having lens groups 24A and 25A and an optical path bending mirror 30A for deflecting light from the relay optical system toward the substrate 22 are arranged. Yes,
The relay optical systems 24A and 25A convert the image of the exit end face of the rod-type integrator 19A into the substrate 2 under a predetermined magnification.
2 to form an irradiation region ILA. At this time, in order to scan the irradiation area ILA in the Y direction in FIG.
The entire optical system up to A may be moved in the Y direction, but in the present embodiment, only a part of the optical system is moved.

In this embodiment, a plurality of reflection mirrors 26A to 29A are arranged between the lens groups 24A and 25A constituting the relay optical system. Here, mirror 2
6A and the mirror 29A are arranged between the light source 10A and the lens group 24A.
The mirrors 27A and 28A are housed in the unit 31A so as to be movable in the Z direction with respect to the mirror 26A. Further, the lens group 25A and the optical path bending mirror 3
0A is. The unit 32A is integrally held in the unit 32A, and is movable along the Y direction in the figure.

In the above configuration, the unit 32A is moved in the Y direction, and the lens group 24A and the lens group 2 are moved.
Unit 31A so that the optical path length between the unit 31A and the
Is moved in the Z direction, the irradiation area ILA on the substrate 22 is scanned in the Y direction. At this time, the lens group 24A due to the movement of the lens group 25A (unit 32A)
The change in the optical path length with respect to the mirrors 27A and 28A (unit 3
1A) is compensated by the movement of the relay optical system 2
The conjugate relationship between the emission end face of the rod-type integrator 19A and the substrate 22 with respect to 4A and 25A is kept constant, and the magnification relationship between them is also kept constant.

As for the interlocking mechanism of the units 31A and 32A, an optical trombone optical system similar to the example in FIG.
926, so that the description here is omitted. Further, in the example of FIG. 3, it is preferable that the shape of the emission end face of the rod-type integrators 19A and 19B is rectangular. Further, by arranging the field stop near the exit end faces of the rod integrators 19A and 19B, the width of the irradiation areas ILA and ILB on the substrate 22 in the X direction can be defined. If the width is made variable, the width of the irradiation areas ILA and ILB in the X direction can be made variable.

The exposure operation in the example of FIG. 3 is the same as that of the first embodiment described above with reference to FIG. 2, and a description thereof will be omitted. Next, a third embodiment according to the present invention will be described with reference to FIGS. In FIG. 4, an XYZ coordinate system is adopted as in FIGS. 1 and 3. The peripheral exposure apparatus according to the third embodiment is based on the configuration of the peripheral exposure apparatus of the first embodiment shown in FIG. 1, and each irradiation unit does not have a light source but light from one light source. Is split by a splitting mirror as a light beam splitting means. Therefore, in the following description, members having the same functions as those shown in FIG. 1 are denoted by the same reference numerals. In FIG. 4, a substrate rotation unit for rotating the substrate 22 is not shown.

The peripheral exposure apparatus shown in FIG.
Is different from the example of FIG. 1 in that a branch mirror 33 is arranged near the second focal position. This split mirror is shown in FIG.
As shown in (a) and (b), a reflective film 332 is deposited near the center of a transparent substrate 331 made of a light transmitting material. Returning to FIG. 4, the light that has passed through the light passing portion of the splitting mirror 33 (the area where the reflection film 332 is not provided) passes through the collimator lens 14A, the optical integrator 15A, and the concave mirror 16A in the same manner as in the example of FIG. The irradiation area ILA is formed on the substrate 22 through the intermediary. As in the example of FIG. 1, a blind 17A for defining the width of the irradiation area ILA in the X direction is arranged between the concave mirror 16A and the substrate 22.

On the other hand, the light beam reflected by the reflection part (reflection film 332) of the split mirror 33 enters the optical fiber 34B whose entrance end is positioned near the second focal position of the elliptical mirror 11. The exit end of the optical fiber 34B is
The irradiation area ILB is formed on the substrate 22 while being positioned close to the side opposite to the irradiation area ILA formation position on the substrate 2. The exit end of the optical fiber 34B is provided movably along a Y-direction guide 21B extending in the Y direction in the figure. ILB to substrate 2
2 can be scanned in the Y direction, and the exposure area 22 extends in the Y direction.
B can be formed.

In the third embodiment, of the light beams from the elliptical mirror 11A, only the light beams in the vicinity of the optical axis having a particularly high illuminance are reflected by the reflection film 332 and guided to the optical fiber 34B by the branching mirror 33. The illuminance in the irradiation area ILB where an extremely high illuminance is required is sufficient. Further, since the size of the irradiation region ILB is smaller than the size of the irradiation region ILA, for example, a width of about 5 to 10 mm from the outer periphery of the substrate 22, even if a quartz fiber is used as the optical fiber 34B, it is not so expensive. No. If the optical fiber 34B is configured such that the density at the exit end is lower than the density of the plurality of fiber wires at the entrance end, the flexibility at the exit end of the optical fiber 34B can be improved, and the optical fiber 34B
The risk of disconnection due to stress applied to itself can be reduced.

In the third embodiment, the irradiation unit 3A for forming the irradiation area ILA is an optical system from the light source 10A to the concave mirror 16A, and the irradiation unit 3B for forming the irradiation area ILB includes the optical fibers 34B and Y. It has a direction guide 21B. The light source 10A, the elliptical mirror 11A, and the dichroic mirror 12A are shared by the irradiation units 3A and 3B.

The exposure operation in the third embodiment is as follows.
Since this is the same as the first and second embodiments described above, the description here is omitted. In the third embodiment, the splitting mirror 33 that splits a light beam into a wavefront is used as the light beam splitting unit. However, a half mirror that splits the light beam by an amplitude at a predetermined light amount ratio may be used instead. . At this time, it is preferable to set the amplitude division ratio of the half mirror so that the amount of light guided to the optical fiber 34B is larger than the amount of light guided to the collimator lens 14A.

Next, referring to FIG. 6, a fourth embodiment according to the present invention will be described.
An embodiment will be described. In FIG. 6, X
An YZ coordinate system is used. In the peripheral exposure apparatus according to the fourth embodiment, the two irradiation units 4A and 4B allow the substrate 2 to be exposed.
While forming two irradiation areas ILA and ILB on the surface 2, by rotating some of the optical members in each of the irradiation units 4 A and 4 B, the respective irradiation areas ILA and ILB are moved in a predetermined direction to perform scanning exposure. It is carried out.

The peripheral exposure device 2 shown in FIG.
The basic configuration of the two irradiation units 4A and 4B is the same as that shown in FIG. 1, and therefore, the following description will particularly describe the differences. In FIG. 6, the only difference between the two irradiation units 4A and 4B is a portion related to the size and shape of the irradiation area formed on the substrate 22. Will be explained. In the configuration of the irradiation unit 4A shown in FIG. 6, the configuration from the light source 10A to the collimator lens 14A is the same as that of the first embodiment shown in FIG. The optical integrator 35A in the irradiation unit 4A of the fourth embodiment is a fly-eye lens composed of a plurality of elements having a predetermined sectional shape as in the example of FIG.
Is different from the example of FIG. 1 in that each of the plurality of elements has a rectangular shape having a longitudinal direction in the X direction in the figure.

The concave mirror 36A disposed on the exit side of the optical integrator 35A is provided rotatably about the X direction in the figure, unlike the concave mirror 16A of FIG. Due to the rotation of the concave mirror 36A, the irradiation area ILA formed on the substrate 22 moves along the Y direction in the drawing. As a result, an exposure region 22A having a shape extending in the Y direction is formed on the substrate 22.

Irradiation unit 4B in the fourth embodiment
Differs from that of the irradiation unit 4A in the configuration of the optical integrator 35B. Specifically, when the optical integrator 35B is a fly-eye lens including a plurality of elements having a rectangular cross section,
The irradiation unit 4A is the same as the irradiation unit 4A except that the longitudinal direction of the plurality of elements is rotated by 90 ° about the optical axis with respect to that of the irradiation unit 4A. That is, the optical integrators 35A and 35B use fly-eye lenses having the same configuration,
The difference is that the directions are arranged so as to differ by 90 ° about the optical axis. With this configuration, the irradiation unit 4B
Is a rectangular irradiation area I having a longitudinal direction in the Y direction in the figure.
LB will be formed on the substrate 22. Also in the irradiation unit 4B, the irradiation area ILB can be scanned along the Y direction in the figure by rotating the concave mirror 36B disposed on the emission side of the optical integrator 35B about the X axis.

Here, the irradiation units 4A and 4B are composed of optical members having the same configuration (only the assembly directions of the optical integrators 35A and 35B are different).
Therefore, there is an advantage that the initial cost at the time of manufacturing can be reduced. Now, in the fourth embodiment, the two irradiation regions IL
A and ILB are scanned along the Y direction to expose
A and 22B are formed, and an exposure area 22A which requires a relatively low exposure amount but has a wide exposure width in the X direction is changed to an irradiation area IL having a longitudinal direction in the scanning orthogonal direction (X direction).
An exposure region 22B formed by A and having a small exposure width in the X direction but requiring a high exposure amount is formed by an irradiation region ILB having a longitudinal direction in the scanning direction (Y direction). As a result, the outputs of the light sources 10A and 10B are the same, and
Even when the scanning speeds of LA and ILB are almost the same, the exposure amount of the exposure region 22B can be made higher than that of the exposure region 22A. As described above, in the fourth embodiment, while using the two irradiation units 4A and 4B having substantially the same configuration, the outermost exposure region 22B having the high exposure amount and the exposure region covering slightly inside the low exposure amount are used. 22A can be efficiently exposed to the periphery.

In the fourth embodiment, it is also possible to select an optimum light source for each of the irradiation units 4A and 4B, and to use another optical system for forming an optimum irradiation area. The exposure operation in the fourth embodiment is different from the above embodiments only in that both of the two irradiation regions ILA and ILB are moved when two exposure regions are formed. Is omitted.

In the fourth embodiment shown in FIG.
Although the two exposure regions 22A and 22B formed on the substrate 2 are formed by scanning exposure, the two exposure regions may be formed by collective exposure (static exposure). FIG. 7 is a schematic view of a peripheral exposure apparatus according to a fifth embodiment in which all exposure regions are formed by collective exposure (static exposure). In FIG. 7, XYZ
Members employing the coordinate system and having the same functions as those of the above-described embodiments are denoted by the same reference numerals.

In the peripheral exposure apparatus shown in FIG. 7, two exposure regions 22A and 22B are formed on the substrate 22 by using the two irradiation units 1A and 5B, respectively. Has the same configuration and function as the irradiation unit 1A of the first embodiment shown in FIG. 1, and therefore the description is omitted here.

The irradiation unit 5B shown in FIG.
nm), h-line (404 nm), and i-line (365 nm).
And a reflecting mirror 38B for condensing light from the long arc lamp 37B. Here, the reflecting mirror 38B
Can be a parabolic mirror having power only in a direction orthogonal to the direction of the light emission length (longitudinal direction) of the long arc lamp 37B.

As the long arc lamp 37B, a lamp having a rod-shaped light emitting portion such as a black light, a high pressure long arc mercury lamp, a low pressure long arc mercury lamp, or the like can be used. In the fifth embodiment, a black light capable of performing exposure ON / OFF by power ON / OFF is applied as the long arc lamp 37B.

In the fifth embodiment, an edge stop 39B for defining the end of the irradiation area 22B on the substrate 22 in the X direction is disposed between the reflecting mirror 38B and the substrate 22. Incidentally, the edge stop 39B may be provided movably in the X direction in the figure to serve as a shutter for passing and blocking light from the long arc lamp 37B via the reflecting mirror 38B.

In this embodiment, the long arc lamp 3
Since a low power type such as a black light is used as 7B, the required illuminance is secured by bringing the long arc lamp 37B and the substrate 22 close to each other. However, the closer the distance between the long arc lamp 37B and the substrate 22 is, the larger the luminous flux going around the edge stop 39B is. Therefore, the inner (+ Y direction) end of the irradiation area ILB is It is difficult to make it accurate. However, in the present embodiment, the irradiation area ILB
Even if the edge inside (+ Y direction side) is blurred and the boundary line inside (+ Y direction side) of the exposure area 22B is blurred, an area inside the blurred boundary line is exposed by the irradiation area ILA. Therefore, no problem arises. in this way,
In the present embodiment, since it is assumed that double exposure is performed, even if a simple and inexpensive irradiation unit 5B composed of a rod-shaped light source and a reflecting mirror is used, an irradiation unit 1A capable of exposing the inside with high edge accuracy is separately provided. Since the arrangement is arranged, it is possible to perform peripheral exposure with high accuracy despite a very inexpensive and simple configuration.

Incidentally, the exposure operation in the fifth embodiment is as follows.
When forming two exposure areas, two irradiation areas ILA,
The only difference from the above-described embodiments is that the collective exposure is performed in a state where both ILBs are stationary, and thus the description thereof is omitted here. In the fifth embodiment, the irradiation unit 5B (and the edge stop 39B) is preferably movable in the X direction. With this configuration, it is possible to cope with the case where the vertical and horizontal lengths of the rectangular substrates 22 are different, and it is also possible to retract the irradiation unit 5B from the loading path and the loading path when loading and unloading the substrate 22. .

In each of the above embodiments, the square substrate 22
In the above example, only the peripheral portion of the rectangular substrate 22 is exposed when performing multi-panning such as forming a two-, four-, or six-panel panel from one substrate. Without
Exposure is also performed on the central portion of the substrate 22. In this case, a plurality of circuit pattern regions are formed on the square substrate 22, and peripheral exposure is performed between the plurality of circuit pattern regions and a peripheral portion of the substrate. In the case of an ordinary liquid crystal display element, there is a process of bonding a substrate including a thin film transistor portion called a TFT to a color filter for displaying a color. At this time, depending on the size of the color filter, it is necessary to provide an interval of about 10 to 30 mm between the panels, so that exposure at the center is required.

In such a case, any one of the irradiation units 1A to 4A described above may be arranged directly above the center of the substrate 22, but the cost becomes too high. 4A is desirably movable in a direction (for example, the X direction) intersecting with the longitudinal direction of the exposure region 22A. In this case, the irradiation units 1A to 4A
It is preferable to move the blind 17A in conjunction with the movement of the blind 17A.

The irradiation unit 1A, 3A or 4A
Is used, the concave mirror 16A (36A) is provided rotatably about the Y direction, and the irradiation area ILA itself is
2 may be formed at the center. Also in this case, the blind 1 is linked to the movement of the irradiation area ILA.
It is also preferable to move 7A. Hereinafter, an example in which exposure is performed on the peripheral portion and the central portion of the substrate 22 will be described with reference to FIG. 8A and 8B are XY plan views for explaining the arrangement relationship of the substrate 22, the irradiation area, and the blind as the exposure area defining means. FIG. 8A shows a first modification, and FIG. A second modification is shown. FIG.
In (a) and (b), members having the same functions as those in the above-described embodiments are denoted by the same reference numerals, and the irradiation region IL
The point that the exposure region 22B is formed by B is the same as in each of the above-described embodiments, and a description thereof will be omitted.

FIG. 8A is different from the peripheral exposure apparatus of each of the above-described embodiments in that a blind 1 for defining an exposure area 22C (irradiation area) at the center of the substrate 22 is provided.
72, 173 are provided, and the substrate 22 is
The point from the end in the + X direction to the blind 173 is collectively illuminated. FIG. 8A shows this collective illumination area I.
LL is indicated by a broken line.

Here, the blind 17A and the blind 172 are movable in the X direction in the figure, and a light-shielding portion (not shown) is provided between the blinds 17A and 172. The edge of the blind 173 is located at the center C of the substrate 22 (the center of rotation by the substrate rotating unit).
It is provided in a fixed state so as to be slightly in the −X direction side. Note that the distance between the (rotation) center C of the substrate 22 and the edge of the blind 173 may be set to, for example, about 1 mm. By setting the position of the blind 17A in the X direction, the width in the X direction of the exposure region 22A formed on the outer peripheral portion of the substrate 22 is set.

As to the exposure of the outer peripheral portion of the substrate 22, two exposure regions 2 are provided on one side in the same manner as in the above embodiment.
2A and 22B are formed in a superimposed state.
With respect to the exposure of the central portion of No. 2, two exposures before and after rotating the substrate 22 by 180 ° form two exposed regions 22C with a predetermined amount of displacement in the lateral direction. Here, the two exposure regions 22C formed to be shifted from each other are:
Since the exposure region 22C itself is set to include the (rotation) center C of the substrate 22, they partially overlap each other. At this time, the exposure region 22C formed so as to partially overlap
Can be set by setting the position of the blind 172 in the X direction.

As shown in FIG. 8B, two exposure regions 22A and 22C are not collectively exposed by one irradiation unit, but two exposure regions 22A and 22C are formed to form separate illumination regions ILLA and ILLC. It is also possible to provide an irradiation unit or to configure the irradiation area of the irradiation unit to be movable in the X direction. In the examples of FIGS. 8A and 8B, the exposure regions 22A and 22C are formed by collective illumination. However, the exposure regions 22A and 22C are formed by performing a scanning exposure for moving a small irradiation region in the Y direction in the drawing. May be formed.

As described above, in the example of FIG. 8, since the two blinds 172 and 173 form the exposure region 22C wider than 露 光 of the exposure width of the exposure region to be formed in the center portion, The central exposure area can be set to the above-described exposure width by performing the 180 ° rotation operation of 22. In each of the above-described embodiments, an example has been described in which two irradiation units are arranged such that the exposure regions 22A and 22B formed by the two irradiation units are parallel to each other. However, the irradiation units may be arranged so that the exposure regions formed by the two irradiation units are orthogonal to each other. Also, the number of irradiation units is not limited to only two, but may be three or four.

Further, arrangement may be made such that static exposure and scanning exposure, scanning exposure and scanning exposure, and still exposure and static exposure can be performed so that the same side can be subjected to multiple exposure. Further, in each of the above-described embodiments, the example in which the plurality of irradiation regions formed by the plurality of irradiation units are formed on different sides of the substrate 22 has been described. Alternatively, a configuration in which a plurality of irradiation areas are formed may be used.

In the above example, 400 n is used as the light source.
Although an ultra-high pressure mercury lamp that supplies light having a wavelength of less than m is used, the light source of the present invention is not limited to an ultra-high pressure mercury lamp. Further, each of the above embodiments is based on the assumption that an exposure light of 400 nm or less is used.
It is not limited only to an apparatus using exposure light of nm or less.

As described above, the present invention can take various configurations without being limited to the above-described embodiments.

[0081]

As described above, according to the present invention, even when exposure is performed using light of 400 nm or less as exposure light,
The exposure width can be easily increased without using a long and thick quartz fiber, and the amount of exposure at the peripheral portion of the substrate can be increased with an inexpensive configuration.

[Brief description of the drawings]

FIG. 1 is a perspective view schematically showing a peripheral exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view showing an exposure area on a square substrate by the peripheral exposure apparatus of the first embodiment.

FIG. 3 is a perspective view schematically showing a peripheral exposure apparatus according to a second embodiment of the present invention.

FIG. 4 is a perspective view schematically showing a peripheral exposure apparatus according to a third embodiment of the present invention.

FIG. 5 is a diagram illustrating a configuration of a light beam branching unit of a peripheral exposure apparatus according to a third embodiment.

FIG. 6 is a perspective view schematically showing a peripheral exposure apparatus according to a fourth embodiment of the present invention.

FIG. 7 is a perspective view schematically showing a peripheral exposure apparatus according to a fifth embodiment of the present invention.

FIG. 8 is a diagram showing a modification of the embodiment of the present invention.

[Explanation of symbols]

 10A, 10B: Light source 1A to 4A, 1B to 5B: Irradiation unit ILA, ILB: Irradiation area 22: Substrate 22A, 22B: Exposure area

Claims (8)

[Claims] 1. A peripheral exposure apparatus for irradiating an exposure light to an area different from an area where a predetermined circuit pattern on a photosensitive material applied to a square substrate is transferred, and supplying the exposure light. A light source; and an illumination optical system for directing exposure light from the light source to the substrate, wherein the illumination optical system includes a first partial illumination system that forms a first irradiation area on the substrate, and an illumination optical system on the substrate. A second partial illumination system that forms a second irradiation area separated from the first irradiation area, wherein the first and second irradiation areas have different sizes from each other, and a part of the first and second irradiation areas. Is a peripheral exposure apparatus, which is superposed and exposed on the substrate. 2. A side of the substrate on which the first irradiation region is formed is different from a side of the substrate on which the second irradiation region is formed. Peripheral exposure equipment. 3. The peripheral exposure apparatus according to claim 1, further comprising substrate rotating means for rotating said substrate at every integral multiple of about 90 °. 4. The light source includes a first light source and a second light source different from the first light source, and exposure light from the first light source is guided to the first partial illumination system, and 2. The exposure apparatus according to claim 1, wherein exposure light from two light sources is guided to the second partial illumination system.
The peripheral exposure apparatus according to any one of claims 1 to 3. 5. A light beam splitting means for splitting exposure light from said light source and guiding it to at least said first partial illumination system and said second partial illumination optical system. The peripheral exposure apparatus according to any one of claims 1 to 3. 6. The apparatus according to claim 1, wherein at least one of the first and second irradiation areas and the substrate relatively move during exposure of the substrate. Peripheral exposure equipment. 7. The apparatus according to claim 1, wherein at least one of the first and second irradiation areas is stationary with respect to the substrate during exposure. Peripheral exposure device. 8. A first step of applying the photosensitive material to the square substrate, and a second step of transferring a circuit pattern to a predetermined area on the photosensitive material on the square substrate. A third step of irradiating exposure light to a region where the circuit pattern is transferred using the peripheral exposure apparatus according to any one of claims 7 to 7, wherein the third step is the same as that of the second step. A peripheral exposure method performed before or after.