CN110554575B - Substrate holding device, exposure device, and method for manufacturing article - Google Patents
Substrate holding device, exposure device, and method for manufacturing article Download PDFInfo
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- CN110554575B CN110554575B CN201910443203.0A CN201910443203A CN110554575B CN 110554575 B CN110554575 B CN 110554575B CN 201910443203 A CN201910443203 A CN 201910443203A CN 110554575 B CN110554575 B CN 110554575B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Abstract
Provided are a substrate holding device, an exposure device, and a method for manufacturing an article, which can reduce exposure unevenness. The substrate holding device includes: a base (521) having a gap; and a reflecting member (523) provided in the gap and reflecting the light transmitted through the substrate (510) to the substrate side, wherein the reflecting member (523) is disposed in an inclined manner with respect to the base (521) in the substrate holding device.
Description
Technical Field
The invention relates to a substrate holding apparatus, an exposure apparatus, and a method of manufacturing an article.
Background
In the manufacture of devices such as semiconductor devices and liquid crystal display devices using photolithography, an exposure apparatus is used in which a pattern of a mask is projected onto a substrate by a projection optical system to transfer the pattern.
The device manufacturing process includes a step of applying a resist to a substrate, a step of transferring a pattern to the substrate by exposure, a step of developing the substrate to which the pattern is transferred, and the like. In general, a step of applying a resist to a substrate and a step of developing the substrate to which a pattern is transferred are performed by a coater, a developer, or the like different from an exposure apparatus that transfers the pattern to the substrate by exposure.
In the device manufacturing process, the device is manufactured while transferring the substrate between different apparatuses. Each apparatus is provided with a substrate holding mechanism for holding a substrate by suction or the like and transferring the substrate, and the substrate holding mechanism generally includes a substrate lifting mechanism such as a susceptor for holding the substrate and a lift pin for lifting and lowering the substrate.
Here, a gap is generated between the susceptor provided at the lower portion of the substrate and the substrate lifting mechanism. Thus, the substrate has a region in which the susceptor and the substrate lifting mechanism are disposed and a region in which these are not disposed in the lower portion thereof.
In the case of exposing a transparent substrate, the exposure light transmitted through the substrate is reflected by the susceptor and the substrate lifting mechanism, and the reflected light causes a resist applied to the substrate to be exposed. The reflected light causes the resist to be exposed to light, which causes exposure unevenness on the substrate.
As a method for reducing the above-mentioned uneven exposure, chinese patent application publication No. 105045048 discloses a structure in which reflection of exposure light is restricted by providing an antireflection member in a gap below a substrate. In chinese patent application publication No. 105045048, exposure light incident on a gap in the lower part of a substrate is used as reflected light to make a resist on the substrate photosensitive and the exposure amount becomes excessive in a region on the substrate above the gap. In order to reduce the exposure amount in the region on the substrate located above the gap, in the substrate holding apparatus in chinese patent application publication No. 105045048, an antireflection member is disposed in the gap.
On the other hand, the inventors of the present application have found that the exposure light entering the gap below the substrate advances and attenuates toward the lower portion of the substrate holding device, and most of the exposure light does not reach the resist on the substrate.
Disclosure of Invention
The substrate holding apparatus according to the present invention for solving the above-described problems includes: a base holding a substrate and having a gap; and a reflecting member provided in the gap and reflecting the light transmitted through the substrate to the substrate side, the reflecting member being arranged to be inclined with respect to the base.
Further features of the invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.
Drawings
Fig. 1 is a schematic view of an exposure apparatus.
Fig. 2 is a schematic view of the substrate holding mechanism.
Fig. 3 is a diagram showing a first embodiment of a base constituting a substrate holding mechanism.
Fig. 4 is a diagram showing a second embodiment of the base constituting the substrate holding mechanism.
Fig. 5 is a diagram showing a third embodiment of the base constituting the substrate holding mechanism.
Fig. 6 is a schematic diagram showing a mechanism of generating exposure unevenness.
Fig. 7 is a graph showing a relationship between the wavelength and the transmittance of light in a photosensitive material.
Fig. 8 is a diagram showing a structure for reducing exposure unevenness.
Fig. 9 is a schematic diagram showing a mechanism of reducing exposure unevenness.
Fig. 10 is a diagram illustrating a method of determining the tilt angle of the reflecting member with respect to the base.
Fig. 11 is a diagram showing the details of the substrate holding mechanism.
Fig. 12 is a diagram showing a structure of a reflecting member in a modification.
(description of reference numerals)
510: a substrate; 521: a base; 523: a reflective member.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. The substrate holding device of the present invention is a substrate holding device suitable for holding a transparent substrate such as a sapphire substrate or a glass substrate. A sapphire substrate is used as a substrate of an LED (Light Emitting Diode) element or the like. Glass substrates are used as substrates of liquid crystal panels and the like.
Fig. 1 is a schematic diagram showing a configuration of an exposure apparatus 1 as one side surface of the present embodiment. The exposure apparatus 1 is used to form a pattern on a substrate. The exposure apparatus 1 includes a light source apparatus 100 including a light source 110, an illumination optical system 200 for illuminating an original plate 310, and an original plate stage 300 for holding the original plate 310. The exposure apparatus 1 further includes a projection optical system 400, and the projection optical system 400 projects an image of the pattern of the original plate 310 onto a substrate 510 held on a substrate stage 500 (substrate holding device).
As the light source 110, a high-pressure mercury lamp, an excimer laser, or the like is used. In addition, as a general exposure light, near ultraviolet light of g line (wavelength about 436nm) in a wavelength region of 100nm to 400nm is used. For example, g-line, i-line (wavelength: about 365nm), KrF excimer laser (wavelength: about 248nm), ArF excimer laser (wavelength: about 193nm), F2 laser (wavelength: about 157nm) and the like of an ultra-high pressure mercury lamp are used.
The light irradiated from the light source 110 is guided to the original plate 310 via the optical system 210 included in the illumination optical system 200. The projection optical system 400 includes an optical system 410 and an aperture stop 420, and projects the pattern of the original plate 310 onto the substrate 510 at a predetermined projection magnification. The substrate 510 is coated with a photosensitive material (resist) having sensitivity to light of a specific wavelength, and when an image of the pattern of the original plate 310 is projected on the resist, a latent image pattern is formed on the resist.
The substrate 510 is held by a substrate holding mechanism 500 as a substrate holding device. The substrate holding mechanism 500 holds the substrate 510 by vacuum suction, electrostatic suction, or the like using a not-shown chuck. The detailed structure of the substrate holding mechanism 500 will be described later.
In the present embodiment, the exposure apparatus 1 is a scanning exposure apparatus (scanner) that transfers the pattern of the original plate 310 to the substrate 510 while scanning the original plate 310 and the substrate 510 in synchronization with each other in the scanning direction. Hereinafter, the vertical direction is referred to as the Z-axis direction, the scanning direction of the substrate 510 within a plane perpendicular to the Z-axis direction is referred to as the Y-axis direction, and the non-scanning direction which is a direction perpendicular to the Z-axis direction and the Y-axis direction is referred to as the X-axis direction.
The amount of light (exposure amount) projected onto the substrate 510 by the projection optical system 400 is an important element for determining the line width of the pattern, and a high-precision pattern can be formed by exposing the resist on the substrate 510 with an appropriate exposure amount.
For example, when the same pattern is repeatedly formed in the pattern forming region on the substrate 510, it is preferable that exposure is performed so that exposure unevenness does not occur in the entire region of the pattern forming region. Although the configuration of the illumination optical system 200 and the projection optical system 400 is devised so that the unevenness of the amount of exposure light projected onto the substrate 510 can be reduced, the amount of light incident on the resist becomes uneven due to so-called flare light irradiated onto the substrate 510.
Here, when light that has passed through the openings of the optical system 410 and the aperture stop 420 included in the projection optical system 400 and has been irradiated onto the resist on the substrate 510 is normal light, of the light that has passed through the original plate 310, light other than the normal light is flare light.
(concerning occurrence of unevenness of exposure)
Next, the cause of the occurrence of exposure unevenness in the exposure apparatus will be described with reference to fig. 2 to 6. Fig. 2 (a) shows a state in which the substrate 510 is held by the substrate holding mechanism 500. Fig. 2 (B) shows a state where the substrate 510 is lifted in the Z-axis direction by the substrate lifting mechanism 522. The substrate 510 is separated from the substrate holding mechanism 500 by the substrate lifting mechanism 522, and is conveyed by a substrate conveying device such as a conveying robot, not shown.
In fig. 2 (a), the substrate holding mechanism 500 vacuum-sucks the substrate 510 using a suction pad (not shown) located between the base 521 and the substrate 510. The suction cup is provided on the upper surface of the base 521. The method of holding the substrate 510 is not limited to vacuum suction, and the substrate 510 may be held by electrostatic suction, for example. As shown in fig. 2 (a), when the substrate 510 is exposed, the substrate 510 is held by the base 521.
The substrate lifting mechanism 522 is movable in the Z-axis direction, and when the substrate 510 is separated from the base 521 as shown in fig. 2 (B), the substrate lifting mechanism 522 moves in the Z-axis direction to lift the substrate 510 upward in the Z-axis direction.
The substrate lifting mechanism 522 includes a lifting portion 522B that moves up and down in the Z-axis direction, and a contact portion 522C that contacts the substrate 510, and has an upper surface of the contact portion 522C as an upper surface 522A. Since the contact portion 522C is in contact with the substrate 510, the material of the contact portion 522C is determined in consideration of the difficulty in damaging the substrate 510 and the wear due to the contact with the substrate 510. The contact portion 522C is generally made of a resin material or the like.
Here, as shown in fig. 2 (a), in a state where the substrate 510 is held by the base 521, a slight gap is provided between the substrate 510 and the substrate lifting mechanism 522. Accordingly, the risk that the substrate 510 interferes with the substrate lifting mechanism 522 and the position of the substrate 510 is changed in the Z-axis direction can be reduced.
Next, the arrangement relationship between the base 521 and the substrate lifting mechanism 522 will be described with reference to fig. 3 to 5. Fig. 3 shows an example in which the base 521 constituting the substrate holding mechanism 500 is divided into a plurality of (8) substrate holding portions in the XY plane and a gap is provided between the substrate holding portions. Substrate holding portions 521a, 521b, 521c, and 521d are disposed on the positive side in the Y-axis direction, and substrate elevating portions 522a, 522b, and 522c are provided in the gaps therebetween. Further, substrate holding portions 521e, 521f, 521g, and 521h are disposed on the negative side in the Y-axis direction, and substrate elevating portions 522d, 522e, and 522f are provided in the gaps therebetween. Fig. 3 shows an example in which a lift lever is provided as the substrate lifting unit.
In fig. 4, the base 521 is divided into substrate holders 521a ', 521 b', 521c ', 521 d'. Substrate elevating units 522a ', 522 b', 522c ', 522 d' are provided in the substrate holding units, respectively. Further, a substrate lifting portion 522e 'is provided in the gap between the substrate holding portions 521 a' and 521b ', and a substrate lifting portion 522 f' is provided in the gap between the substrate holding portions 521c 'and 521 d'. Each substrate lifting unit in fig. 4 is constituted by a lifting rod.
In fig. 5, the base 521 is divided into substrate holding portions 521a ", 521 b", 521c ", 521 d", 521e ", 521 f". Each substrate holding portion is provided with a through hole, and an elevating pin 522 as a substrate elevating mechanism that moves in the through hole in the Z-axis direction is provided.
As described above, the substrate lifting mechanism 522 may be a lifter-type mechanism as shown in fig. 3 and 4, or may be a lifter-pin type mechanism as shown in fig. 5. In short, the substrate lifting unit constituting the substrate lifting mechanism 522 is disposed in the gap provided in the susceptor 521. As described with reference to fig. 3 to 5, gaps are provided between the substrate holding portions and between the substrate holding portion and the substrate lifting portion, and exposure light passing through the gaps becomes an important factor for the occurrence of exposure unevenness.
Next, a mechanism of occurrence of exposure unevenness will be described with reference to fig. 6. Fig. 6 shows a state where a resist 511 applied on a substrate 510 is irradiated with exposure light. The light beam 10 incident on the resist 511 from the space above the base 521 transmits through the resist 511 and the substrate 510, and is reflected on the upper surface 521A of the base 521. The light beam 12 entering the resist 511 from the space above the substrate lifting mechanism 522 transmits through the resist 511 and the substrate 510, and is reflected on the upper portion of the substrate lifting mechanism 522. On the other hand, the light beam 11 incident on the resist 511 from the upper portion of the gap between the base 521 and the substrate lifting mechanism 522 passes through the resist 511 and the substrate 510.
Here, a part of the exposure light incident on the resist 511 is absorbed by the resist 511. The absorbance and transmittance of light differ depending on the wavelength of exposure light and the optical characteristics of the resist 511. The transmittance of the exposure light needle to the resist was determined as follows.
First, when light is taken as a one-dimensional plane wave propagating in the Z direction, the amplitude E (Z, t) of the plane wave at time t is expressed as follows:
[ equation 1 ]
E(Z，t)＝E 0 exp[i(kZ-ωt)]。
k is the wave number and ω is the frequency. When a complex refractive index N is used, the frequency ω is expressed as follows:
[ equation 2 ]
The amplitude E (Z, t) can be expressed as follows.
[ equation 3 ]
Further, from ω ═ 2 π c/λ, it is found that
[ equation 4 ]
The energy I (Z, t) of light is obtained from the square norm of the amplitude E (Z, t) or the square of the norm of the amplitude E (Z, t), and is expressed as follows:
[ equation 5 ]
When the transmittance T of light is calculated from this, it follows:
[ equation 6 ]
The light beam transmitted through the resist 511 by the transmittance T thus calculated transmits through the substrate 510 and reaches the upper portions of the susceptor 521 and the substrate lifting mechanism 522. Fig. 7 is a graph showing a relationship between the wavelength and the transmittance of light in a specific resist. In an exposure apparatus using a mercury lamp, i-line (wavelength of about 365nm), h-line (wavelength of about 405nm), g-line (wavelength of about 436nm), and the like are used as exposure light. In fig. 7, the transmittance for the i-line is denoted as Ti, the transmittance for the h-line is denoted as Th, and the transmittance for the g-line is denoted as Tg. It is known that the value of the transmittance is different for each wavelength.
The light reaching the upper portions of the base 521 and the substrate lifting mechanism 522 is reflected by specular reflection and diffuse reflection on the reflection surface. Specular reflection is reflection whose reflection angle is determined by the angle of light incident on a reflection surface, and generally speaking, the incident angle of light is equal to the reflection angle. Diffuse reflection is reflection that is not dependent on the angle of incidence of light incident on the reflecting surface, and the intensity of light reflected at an angle θ from the perpendicular to the reflecting surface depends on cos θ. Diffuse reflection is also known as lambertian reflection.
Light reflected or diffusely reflected by the upper surface of the base 521 or the substrate lift mechanism 522 passes through the substrate 510 and is incident on the resist 511 as flare light. On the other hand, the light shown as the light ray 11 in fig. 6 is incident on the gap between the susceptor 521 and the substrate lifting mechanism 522, and is mostly attenuated and is no longer incident on the resist 511 again.
As described above, an area where flare light is generated frequently and an area where flare light is hardly generated are generated on the substrate 510. As described above, since flare light occurs due to the reflection characteristics of the upper surfaces of the base 521 and the substrate lifting mechanism 522, it is difficult to sufficiently reduce flare light. Since the light amount of flare light incident on the resist 511 differs depending on each area on the substrate 510, exposure unevenness occurs as a result.
(method for reducing unevenness of exposure)
Next, a method of reducing exposure unevenness will be described with reference to fig. 8 and 9. In fig. 8, the reflection member 523 is provided to be inclined with respect to the upper surface of the base 521 in the gap between the base 521 and the substrate lifting mechanism 522, thereby reducing the exposure unevenness. Note that since the configuration of fig. 8 other than the reflecting member 523 is the same as that shown in fig. 2, the description thereof is omitted. The reflecting member 523 is made of a resin material such as acrylic or teflon (registered trademark), or a metal material such as aluminum. The metal material may be subjected to a surface treatment such as plating. The reflecting member 523 is disposed in a region below the contact portion 522C of the substrate lifting mechanism 522.
Next, a mechanism of reducing exposure unevenness will be described with reference to fig. 9. The optical paths of the light rays 10 and 12 are as shown in fig. 6, and therefore, the description thereof is omitted here. The light beam 11 passes through the resist 511 and the substrate 510, reaches the upper surface 523A of the reflecting member 523, and is reflected to the substrate side at the upper surface 523A.
As described above, the light is reflected by the specular reflection and the diffuse reflection on the upper surface 523A of the reflecting member 523. The behavior of the light ray 41 specularly reflected by the upper surface 523A and the light ray 42 diffusely reflected by the upper surface 523A is determined by the specular reflectance and the diffuse reflectance of the upper surface 523A, respectively.
Here, the specular reflectance is likely to vary greatly due to manufacturing errors of the reflecting member 523 and the like. When the specular reflectance of the upper surface 523A of the reflecting member 523 is deviated from a desired value, a sufficient effect of reducing exposure unevenness described later may not be obtained. On the other hand, since the variation in diffuse reflectance due to manufacturing errors or the like is smaller than the specular reflectance, the exposure unevenness is reduced by the light diffusely reflected by the upper surface 523A, and the effect of reducing the exposure unevenness is easily obtained.
Accordingly, in the present invention, by providing the reflecting member 523 at an inclination with respect to the upper surface of the base 521, the light specularly reflected at the upper surface 523A of the reflecting member 523 becomes less likely to reach the resist 511 on the substrate 510. That is, in the present invention, exposure unevenness is reduced mainly by light diffusely reflected on the upper surface 523A of the reflecting member 523.
As shown in fig. 9, the reflecting member 523 is arranged to be inclined with respect to the upper surface of the base 521 such that the light beam 41 specularly reflected at the upper surface 523A of the reflecting member 523 reaches the side surface of the base 521. The light 41 reaching the side of the pedestal 521 is attenuated, and most of it does not reach the resist 11. On the other hand, the light ray 42, which is a part of the light diffusely reflected on the upper surface 523A of the reflecting member 523, passes through the gap between the susceptor 521 and the substrate lifting mechanism 522, passes through the substrate 510, and then reaches the resist 511.
As described above, the inclination angle of the reflecting member 523 with respect to the upper surface of the base 521 is set so that the light beam 41 specularly reflected at the upper surface 523A of the reflecting member 523 reaches the side surface of the base 521.
Next, a method of determining the inclination angle θ of the reflecting member 523 with respect to the upper surface of the base 521 will be described with reference to fig. 10. Here, the gap between the base 521 provided with the reflecting member 523 and the substrate lifting mechanism 522 is denoted by W, the distance between the center of the upper surface 523A of the reflecting member 523 and the vertical direction of the upper surface 521A of the base 521 is denoted by d, and the inclination angle of the reflecting member 523 with respect to the upper surface 521A of the base 521 is denoted by θ.
The light ray 21 perpendicularly incident on the center of the upper surface 523A is specularly reflected at a reflection angle of 2 θ. Here, the condition that the light beam 41 specularly reflected on the upper surface 523A of the reflecting member 523 reaches the side surface of the base 521 is shown by the following conditional expression.
W＜d×|tan2θ|
I.e. to satisfy
[ equation 7 ]
Or
[ equation 8 ]
The inclination angle θ of the reflecting member 523 with respect to the upper surface 521A of the base 521 may be set.
As described above, the reflection member 523 is provided in the gap between the base 521 and the substrate lifting mechanism 522 so as to be inclined with respect to the upper surface of the base 521, and flare light is incident on the resist 511 positioned above the gap. Further, by appropriately setting the inclination angle θ of the reflecting member 523 with respect to the base 521, the amount of flare light incident on the resist 511 can be estimated with high accuracy.
It is preferable that the material of the reflecting member 523 and the position of the reflecting member 523 in the vertical direction be determined in accordance with the amount of flare light to be incident on the resist 511 positioned above the gap between the susceptor 521 and the substrate lifting mechanism 522. Accordingly, the difference between the light amount reflected by the base 521 and reaching the first resist region on the upper portion of the base 521 and the light amount reflected by the reflecting member 523 and reaching the second resist region on the upper portion of the reflecting member 523 is reduced. In addition, the difference between the light amount reflected by the substrate lifting mechanism 522 and reaching the third resist region above the substrate lifting mechanism 522 and the light amount reflected by the reflecting member 523 and reaching the second resist region above the reflecting member 523 is reduced.
As a result, the light amount distribution of the flare light irradiated to the resist 511 can be made uniform to some extent. The first resist region is a region shown by 511A in fig. 8, the second resist region is a region shown by 511B in fig. 8, and the third resist region is a region shown by 511C in fig. 8.
(position adjustment of reflecting Member)
As described above, in order to effectively reduce the exposure unevenness, it is preferable to provide a position adjustment mechanism for adjusting the position of the reflecting member 523 in the Z-axis direction. Although the reflectance of the base 521, the substrate elevating mechanism 522, and the reflecting member 523 is mainly determined by the physical property values of the materials, the reflectance varies depending on manufacturing errors and the like. In addition, the reflectance varies depending on the characteristics of the resist, the wavelength of the exposure light, and the process during exposure. By driving the reflecting member 523 in the Z-axis direction, exposure unevenness that may occur due to these variations in reflectance can be reduced.
The substrate holding apparatus including the position adjustment mechanism will be described in detail with reference to fig. 11. Fig. 11 is a diagram extracted from fig. 8 and used to explain the configuration of the position adjustment mechanism 524 of the reflecting member 523 and the like. As shown in fig. 11, the reflecting member 523 is disposed at a distance from the base 521 and the substrate lifting mechanism 522. The reflecting member 523 is driven by a position adjustment mechanism 524 and is movable in the Z-axis direction.
The base 521 and the position adjustment mechanism 524 are attached to an upper portion of a top plate 525 on a movable stage (not shown) that is movable in the X-axis direction and the Y-axis direction. The elevating portion 522B constituting the substrate elevating mechanism 522 passes through the top plate 525, and the elevating portion 522B is driven in the Z-axis direction along the guide 526 by an actuator not shown. The position adjustment mechanism 524 is driven in the Z-axis direction by an actuator, not shown, provided on the top plate 525.
(modification example)
In the above embodiment, an example in which the reflecting member 523 is provided to be inclined with respect to the upper surface of the base 521 in the gap between the base 521 and the substrate lifting mechanism 522 has been described. As shown in fig. 12, as a configuration for obtaining the same operational effect as in this embodiment, a configuration may be adopted in which the upper surface of the reflecting member 524 is formed in a zigzag shape in which inclined portions 524A are continuously provided.
As shown in fig. 12 (a) and (B), the same effect as that of fig. 8 can be obtained by making the upper surface of the reflecting member 524 zigzag. The specific shape of the upper surface of the reflective member 524 is determined as follows.
Here, the gap between the base 521 provided with the reflecting member 524 and the substrate lifting mechanism 522 is denoted by W, the distance between the center of the inclined portion 524A and the vertical direction of the upper surface 521A of the base 521 is denoted by d, and the inclination angle of the inclined portion 524A with respect to the base 521 is denoted by θ.
The light ray 21 perpendicularly incident on the inclined portion 524A is specularly reflected at a reflection angle of 2 θ. Here, the condition that the light beam 41 specularly reflected at the inclined portion 524A reaches the side surface of the base 521 is shown by the following conditional expression.
W＜d×|tan2θ|
I.e. to satisfy
[ equation 9 ]
Or
[ number formula 10 ]
The inclination angle θ of the inclined portion 524A with respect to the upper surface 521A of the base 521 may be set.
In addition, although the embodiment in which the reflecting member 523 is disposed in the gap between the base 521 and the substrate lifting mechanism 522 has been described in the above embodiment, the reflecting member 523 may be disposed in the gap between the substrate holding portions as shown in fig. 3 to 5. This is because, even when the substrate lifting mechanism 522 is not disposed between the substrate holding portions, if a gap is formed between the substrate holding portions, the same problem as that described above occurs.
Although the above description has been made of an example in which the substrate holding apparatus is applied to the scanner as the exposure apparatus 1, the substrate holding apparatus of the present invention may be applied to, for example, a stepper that fixes the original plate 310 and projects the pattern of the original plate 310 on the substrate 510.
(method of manufacturing article)
Next, a method for manufacturing an article (a semiconductor integrated circuit device, a liquid crystal display device, or the like) using the exposure apparatus will be described. As a method for manufacturing an article, a step of forming a pattern by irradiating exposure light to a substrate held by the substrate holding apparatus of the present invention and a step of processing (developing, etching, etc.) the substrate on which the pattern is formed are performed. By using the substrate holding apparatus of the present invention, exposure unevenness can be effectively reduced, and as a result, pattern formation accuracy on the substrate can be improved.
The present method for manufacturing an article is advantageous in at least one of the performance, quality, productivity, and production cost of the article, compared to the conventional method. The exposure apparatus can provide articles such as high-quality devices (semiconductor integrated circuit devices, liquid crystal display devices, and the like).
While the preferred embodiments of the present invention have been described above, it is to be understood that the present invention is not limited to these embodiments, and various changes and modifications can be made within the scope of the present invention.
Claims (20)
1. A substrate holding apparatus, comprising:
a base that holds a substrate coated with a photosensitive material; and
a reflecting member provided in the gap of the base and reflecting light transmitted through the substrate, the light having a wavelength at which the photosensitive material is photosensitive,
an upper surface of the reflecting member is configured to be inclined with respect to an upper surface of the base,
the light reflected by the reflecting member reaches the photosensitive material.
2. The substrate holding apparatus according to claim 1,
when the interval of the gap provided with the reflecting member is W, the distance between the center of the upper surface of the reflecting member and the vertical direction of the upper surface of the base is d, and the inclination angle of the reflecting member relative to the upper surface of the base is theta, the following conditional expression is satisfied:
W＜d×|tan2θ|。
3. a substrate holding apparatus, comprising:
a base that holds a substrate coated with a photosensitive material; and
a reflecting member provided in the gap of the base and reflecting light of a wavelength that the photosensitive material is sensitive to, which has transmitted through the substrate,
the upper surface of the reflecting member is in a zigzag shape continuously provided with inclined portions,
the light reflected by the reflecting member reaches the photosensitive material.
4. The substrate holding apparatus according to claim 3,
when the interval of the gap provided with the reflecting member is W, the distance between the center of the upper surface of the inclined part and the vertical direction of the upper surface of the base is d, and the inclination angle of the inclined part relative to the upper surface of the base is theta, the following conditional expression is satisfied:
W＜d×|tan2θ|。
5. the substrate holding apparatus according to claim 1,
the reflection member is provided so that a difference between an amount of light reflected by the base and reaching the first resist region on the upper portion of the base and an amount of light reflected by the reflection member and reaching the second resist region on the upper portion of the reflection member is reduced.
6. The substrate holding apparatus according to claim 3,
the reflection member is provided so that a difference between an amount of light reflected by the base and reaching the first resist region on the upper portion of the base and an amount of light reflected by the reflection member and reaching the second resist region on the upper portion of the reflection member is reduced.
7. The substrate holding apparatus according to claim 1,
the reflecting member is movable in the vertical direction.
8. The substrate holding apparatus according to claim 3,
the reflecting member is movable in the vertical direction.
9. The substrate holding apparatus according to claim 7,
the apparatus further includes an adjusting mechanism for moving the reflecting member in the vertical direction.
10. The substrate holding apparatus according to claim 8,
the apparatus further includes an adjusting mechanism for moving the reflecting member in the vertical direction.
11. The substrate holding apparatus according to claim 1,
the base is provided with a through hole, and the reflecting member is provided inside the through hole.
12. The substrate holding apparatus according to claim 3,
the base is provided with a through hole, and the reflecting member is provided inside the through hole.
13. The substrate holding apparatus according to claim 1,
further comprises a lifting mechanism for vertically lifting the substrate,
the reflecting member is provided in a gap between the base and the elevating mechanism.
14. The substrate holding apparatus according to claim 3,
further comprises a lifting mechanism for vertically lifting the substrate,
the reflecting member is provided in a gap between the base and the elevating mechanism.
15. The substrate holding apparatus according to claim 13,
the reflection member is provided so that a difference between a light amount of the second resist region reflected by the reflection member and reaching an upper portion of the reflection member and a light amount of the third resist region reflected by the lift mechanism and reaching an upper portion of the lift mechanism is reduced.
16. The substrate holding apparatus according to claim 14,
the reflection member is provided so that a difference between a light amount of the second resist region reflected by the reflection member and reaching an upper portion of the reflection member and a light amount of the third resist region reflected by the lift mechanism and reaching an upper portion of the lift mechanism is reduced.
17. The substrate holding apparatus according to claim 1,
the susceptor includes a plurality of substrate holding portions that hold the substrate,
the reflecting member is provided in a gap between the plurality of substrate holding portions.
18. The substrate holding apparatus according to claim 3,
the susceptor includes a plurality of substrate holding portions that hold the substrate,
the reflecting member is provided in a gap between the plurality of substrate holding portions.
19. An exposure apparatus for transferring a pattern of an original plate to a substrate using exposure light, the exposure apparatus being characterized in that,
transferring the pattern of the original plate to a transparent substrate having a characteristic of transmitting exposure light in a state where the transparent substrate is held by the substrate holding apparatus according to any one of claims 1 to 18.
20. A method of manufacturing an article, comprising:
exposing a substrate using the exposure apparatus according to claim 19; and
and developing the substrate exposed by the step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-103897 | 2018-05-30 | ||
| JP2018103897A JP6991927B2 (en) | 2018-05-30 | 2018-05-30 | Method of manufacturing substrate holding device, exposure device and article |
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| CN110554575A CN110554575A (en) | 2019-12-10 |
| CN110554575B true CN110554575B (en) | 2022-09-20 |
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| Country | Link |
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| JP (1) | JP6991927B2 (en) |
| KR (1) | KR102581695B1 (en) |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007041448A (en) * | 2005-08-05 | 2007-02-15 | V Technology Co Ltd | Exposure device |
| TW200905785A (en) * | 2007-03-06 | 2009-02-01 | Yaskawa Denki Seisakusho Kk | Precision positioning apparatus |
| CN106773553A (en) * | 2017-03-06 | 2017-05-31 | 重庆京东方光电科技有限公司 | Bogey and exposure sources |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0894493A (en) * | 1994-09-28 | 1996-04-12 | Mitsubishi Heavy Ind Ltd | Inspection equipment for liquid display board |
| JP3690536B2 (en) * | 1995-12-21 | 2005-08-31 | 株式会社ニコン | Observation method and apparatus, and exposure method and apparatus |
| JP4748873B2 (en) | 2001-04-06 | 2011-08-17 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
-
2018
- 2018-05-30 JP JP2018103897A patent/JP6991927B2/en active Active
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- 2019-05-22 KR KR1020190059838A patent/KR102581695B1/en active IP Right Grant
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007041448A (en) * | 2005-08-05 | 2007-02-15 | V Technology Co Ltd | Exposure device |
| TW200905785A (en) * | 2007-03-06 | 2009-02-01 | Yaskawa Denki Seisakusho Kk | Precision positioning apparatus |
| CN106773553A (en) * | 2017-03-06 | 2017-05-31 | 重庆京东方光电科技有限公司 | Bogey and exposure sources |
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| Publication number | Publication date |
|---|---|
| KR20190136935A (en) | 2019-12-10 |
| CN110554575A (en) | 2019-12-10 |
| JP6991927B2 (en) | 2022-01-13 |
| KR102581695B1 (en) | 2023-09-22 |
| JP2019207987A (en) | 2019-12-05 |
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