JP6989602B2 - 微細構造化部品のマイクロリソグラフィ製造のための方法 - Google Patents

微細構造化部品のマイクロリソグラフィ製造のための方法 Download PDF

Info

Publication number
JP6989602B2
JP6989602B2 JP2019522919A JP2019522919A JP6989602B2 JP 6989602 B2 JP6989602 B2 JP 6989602B2 JP 2019522919 A JP2019522919 A JP 2019522919A JP 2019522919 A JP2019522919 A JP 2019522919A JP 6989602 B2 JP6989602 B2 JP 6989602B2
Authority
JP
Japan
Prior art keywords
photoresist
structural
wafer
projection lens
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019522919A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019533835A5 (cg-RX-API-DMAC10.html
JP2019533835A (ja
Inventor
ミヒャエル パトラ
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2019533835A publication Critical patent/JP2019533835A/ja
Publication of JP2019533835A5 publication Critical patent/JP2019533835A5/ja
Priority to JP2021196304A priority Critical patent/JP7296439B2/ja
Application granted granted Critical
Publication of JP6989602B2 publication Critical patent/JP6989602B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2019522919A 2016-10-28 2017-10-06 微細構造化部品のマイクロリソグラフィ製造のための方法 Active JP6989602B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021196304A JP7296439B2 (ja) 2016-10-28 2021-12-02 微細構造化部品のマイクロリソグラフィ製造のための方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016221261.3 2016-10-28
DE102016221261.3A DE102016221261A1 (de) 2016-10-28 2016-10-28 Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente
PCT/EP2017/075490 WO2018077594A1 (de) 2016-10-28 2017-10-06 Verfahren zur mikrolithographischen herstellung mikrostrukturierter bauelemente

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021196304A Division JP7296439B2 (ja) 2016-10-28 2021-12-02 微細構造化部品のマイクロリソグラフィ製造のための方法

Publications (3)

Publication Number Publication Date
JP2019533835A JP2019533835A (ja) 2019-11-21
JP2019533835A5 JP2019533835A5 (cg-RX-API-DMAC10.html) 2020-11-12
JP6989602B2 true JP6989602B2 (ja) 2022-01-05

Family

ID=60143685

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019522919A Active JP6989602B2 (ja) 2016-10-28 2017-10-06 微細構造化部品のマイクロリソグラフィ製造のための方法
JP2021196304A Active JP7296439B2 (ja) 2016-10-28 2021-12-02 微細構造化部品のマイクロリソグラフィ製造のための方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021196304A Active JP7296439B2 (ja) 2016-10-28 2021-12-02 微細構造化部品のマイクロリソグラフィ製造のための方法

Country Status (4)

Country Link
US (1) US10802403B2 (cg-RX-API-DMAC10.html)
JP (2) JP6989602B2 (cg-RX-API-DMAC10.html)
DE (1) DE102016221261A1 (cg-RX-API-DMAC10.html)
WO (1) WO2018077594A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022024170A (ja) * 2016-10-28 2022-02-08 カール・ツァイス・エスエムティー・ゲーエムベーハー 微細構造化部品のマイクロリソグラフィ製造のための方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576829A (en) * 1990-10-08 1996-11-19 Nikon Corporation Method and apparatus for inspecting a phase-shifted mask
JPH04346413A (ja) * 1991-05-24 1992-12-02 Hitachi Ltd 半導体ウェハずれ修正方法および投影露光装置
JP3034332B2 (ja) * 1991-06-10 2000-04-17 株式会社東芝 フォトレジストの現像方法及びその現像装置
JP2971434B2 (ja) * 1998-03-19 1999-11-08 株式会社東芝 化学増幅型レジスト及びその製造方法、並びにパターン形成方法及び露光シミュレーション方法
JP2000056476A (ja) * 1998-08-06 2000-02-25 Oki Electric Ind Co Ltd レジストパターン形成方法
JP2000100758A (ja) * 1998-09-18 2000-04-07 Canon Inc ビーム描画装置及びパターン形成方法
JP2002319539A (ja) * 2001-02-13 2002-10-31 Nikon Corp 仕様決定方法及びコンピュータシステム
JP2004325989A (ja) * 2003-04-28 2004-11-18 Ricoh Co Ltd 微細形状作成方法、レジストパターン形状設計方法、レジストパターン形状設計装置、レジストパターン形状設計用プログラム、レジストパターン形状設計用記憶媒体、レジストパターン及び微細形状パターン
JP4515184B2 (ja) * 2003-07-31 2010-07-28 富士フイルム株式会社 パターン製造システム、露光装置および露光方法
US7743357B2 (en) * 2006-05-31 2010-06-22 Synopsys, Inc. Method and apparatus for determining a process model that models the impact of CAR/PEB on the resist profile
US7483804B2 (en) * 2006-09-29 2009-01-27 Tokyo Electron Limited Method of real time dynamic CD control
JP5064069B2 (ja) * 2007-03-20 2012-10-31 株式会社Ｓｏｋｕｄｏ 基板搬送装置および熱処理装置
JP5004658B2 (ja) * 2007-05-21 2012-08-22 キヤノン株式会社 露光装置、露光方法、デバイス製造方法及び測定装置
US8568964B2 (en) * 2009-04-27 2013-10-29 Tokyo Electron Limited Flood exposure process for dual tone development in lithographic applications
JP5665398B2 (ja) * 2009-08-10 2015-02-04 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
DE102009038558A1 (de) * 2009-08-24 2011-03-10 Carl Zeiss Sms Gmbh Verfahren zur Emulation eines fotolithographischen Prozesses und Maskeninspektionsmikroskop zur Durchführung des Verfahrens
DE102010029651A1 (de) * 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
NL2007615A (en) * 2010-11-30 2012-05-31 Asml Netherlands Bv Method of operating a patterning device and lithographic apparatus.
TWI475597B (zh) * 2012-02-08 2015-03-01 日立全球先端科技股份有限公司 Pattern evaluation method and pattern evaluation device
CN105008997B (zh) * 2013-02-25 2017-03-08 Asml荷兰有限公司 离散源掩模优化
US9646898B2 (en) * 2013-11-27 2017-05-09 Tokyo Electron Limited Methods for treating a substrate by optical projection of a correction pattern based on a detected spatial heat signature of the substrate
JP6337757B2 (ja) * 2014-01-20 2018-06-06 東京エレクトロン株式会社 露光装置、レジストパターン形成方法及び記憶媒体
KR101888287B1 (ko) * 2014-01-27 2018-08-13 도쿄엘렉트론가부시키가이샤 패터닝된 필름의 임계 치수를 시프팅하기 위한 시스템 및 방법
KR101846109B1 (ko) * 2014-02-24 2018-04-05 도쿄엘렉트론가부시키가이샤 감광성 화학적 증폭 레지스트 내에서의 감광제 농도의 측정을 위한 계측
US10338480B2 (en) * 2014-05-30 2019-07-02 Nikon Corporation Lithography system, simulation apparatus, and pattern forming method
US9645495B2 (en) 2014-08-13 2017-05-09 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
JP2016086042A (ja) * 2014-10-23 2016-05-19 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6422307B2 (ja) * 2014-11-05 2018-11-14 キヤノン株式会社 露光方法、露光装置、および物品の製造方法
JP6175455B2 (ja) * 2015-01-22 2017-08-02 東京エレクトロン株式会社 レジストパターン形成方法
US10429745B2 (en) * 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
TWI657314B (zh) * 2016-05-13 2019-04-21 Tokyo Electron Limited 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制
WO2017197288A1 (en) * 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent
DE102016209616A1 (de) * 2016-06-01 2017-12-07 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Vorhersage des mit einer Maske bei Durchführung eines Lithographieprozesses erzielten Abbildungsergebnisses
DE102016221261A1 (de) * 2016-10-28 2018-05-03 Carl Zeiss Smt Gmbh Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente
JP7034771B2 (ja) * 2018-03-02 2022-03-14 キオクシア株式会社 露光装置、露光方法、及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022024170A (ja) * 2016-10-28 2022-02-08 カール・ツァイス・エスエムティー・ゲーエムベーハー 微細構造化部品のマイクロリソグラフィ製造のための方法
JP7296439B2 (ja) 2016-10-28 2023-06-22 カール・ツァイス・エスエムティー・ゲーエムベーハー 微細構造化部品のマイクロリソグラフィ製造のための方法

Also Published As

Publication number Publication date
US10802403B2 (en) 2020-10-13
JP7296439B2 (ja) 2023-06-22
US20190243248A1 (en) 2019-08-08
JP2019533835A (ja) 2019-11-21
WO2018077594A1 (de) 2018-05-03
DE102016221261A1 (de) 2018-05-03
JP2022024170A (ja) 2022-02-08

Similar Documents

Publication Publication Date Title
US9977339B2 (en) System and method for shifting critical dimensions of patterned films
CN102834776B (zh) 具有对由掩模引起的成像像差的校正的操作投射曝光设备的方法
KR100825454B1 (ko) 리소그래피 장치 및 디바이스 제조 방법
CN114631055B (zh) 用于高效的高次谐波产生的方法和设备
US9891525B2 (en) Exposure method, exposure apparatus, and article manufacturing method
JP2006148121A (ja) 潜在重ね合わせ測定
TWI802572B (zh) 校正方法
US9348235B2 (en) Exposure apparatus and method of manufacturing device
CN112119355B (zh) 检查设备的照射源、检查设备和检查方法
TW200537256A (en) Illumination apparatus, exposure apparatus and device manufacturing method
JP2013531818A (ja) 大きな焦点深度による、周期的パターンの印刷方法および印刷装置
TW200919107A (en) Imaging characteristics fluctuation predicting method, exposure apparatus, and device manufacturing method
JP2003022968A (ja) リソグラフィ装置の較正方法、リソグラフィ装置の較正に使用するマスク、リソグラフィ装置、デバイス製造方法、該デバイス製造方法により製造されたデバイス
US20090147231A1 (en) Scanning exposure apparatus and method of manufacturing device
KR102257460B1 (ko) 리소그래피 공정 모니터링 방법
JP2021532398A (ja) 光マスクレス
JP7296439B2 (ja) 微細構造化部品のマイクロリソグラフィ製造のための方法
KR101791729B1 (ko) 노출 강도를 조정함으로써 극성 불균형을 감소시키는 방법 및 시스템
CN114846412A (zh) 对准方法和相关联的对准和光刻设备
JP2006179938A (ja) サイドローブのプリントを避けるための最適化
JP5188152B2 (ja) 放射ビームのパルス間の均一性を向上させる方法
JP2006269462A (ja) 露光装置および照明装置
JP5742385B2 (ja) 光学性能のシミュレーション方法、露光方法、及び記録媒体
Lambrechts et al. 3 The Importance of Photolithography
JP2003318083A (ja) 光学特性計測方法、光学系の調整方法、露光方法及び装置、並びにデバイス製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201002

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201002

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210623

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210628

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210924

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211004

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20211101

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211202

R150 Certificate of patent or registration of utility model

Ref document number: 6989602

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250