JP6983756B2 - 複数のlnaの間のカスケードされたスイッチ - Google Patents

複数のlnaの間のカスケードされたスイッチ Download PDF

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Publication number
JP6983756B2
JP6983756B2 JP2018506218A JP2018506218A JP6983756B2 JP 6983756 B2 JP6983756 B2 JP 6983756B2 JP 2018506218 A JP2018506218 A JP 2018506218A JP 2018506218 A JP2018506218 A JP 2018506218A JP 6983756 B2 JP6983756 B2 JP 6983756B2
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Japan
Prior art keywords
lnas
switches
cascaded switch
coupled
outputs
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English (en)
Japanese (ja)
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JP2018523947A5 (enExample
JP2018523947A (ja
Inventor
チャン、リ−チュン
ダイ、リャン
グデム、プラサド・スリニバサ・シバ
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Qualcomm Inc
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Qualcomm Inc
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Publication of JP2018523947A5 publication Critical patent/JP2018523947A5/ja
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/294Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21109An input signal being distributed by switching to a plurality of paralleled power amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)
JP2018506218A 2015-08-07 2016-07-01 複数のlnaの間のカスケードされたスイッチ Active JP6983756B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/821,614 US9843291B2 (en) 2015-08-07 2015-08-07 Cascaded switch between pluralities of LNAS
US14/821,614 2015-08-07
PCT/US2016/040826 WO2017027120A1 (en) 2015-08-07 2016-07-01 Cascaded switch between pluralities of lnas

Publications (3)

Publication Number Publication Date
JP2018523947A JP2018523947A (ja) 2018-08-23
JP2018523947A5 JP2018523947A5 (enExample) 2019-07-11
JP6983756B2 true JP6983756B2 (ja) 2021-12-17

Family

ID=56561447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018506218A Active JP6983756B2 (ja) 2015-08-07 2016-07-01 複数のlnaの間のカスケードされたスイッチ

Country Status (8)

Country Link
US (2) US9843291B2 (enExample)
EP (1) EP3332484B1 (enExample)
JP (1) JP6983756B2 (enExample)
KR (1) KR102504244B1 (enExample)
CN (1) CN107925423B (enExample)
BR (1) BR112018002503A2 (enExample)
CA (1) CA2990200A1 (enExample)
WO (1) WO2017027120A1 (enExample)

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US9843291B2 (en) 2015-08-07 2017-12-12 Qualcomm Incorporated Cascaded switch between pluralities of LNAS
US10003482B2 (en) * 2016-08-31 2018-06-19 Silicon Laboratories Inc. Receiver architecture having full-band capture and narrow-band paths
WO2018180761A1 (ja) * 2017-03-30 2018-10-04 株式会社村田製作所 高周波モジュール
KR102631348B1 (ko) * 2018-04-19 2024-01-31 삼성전자주식회사 반송파 집적(Carrier Aggregation)을 이용하여 신호를 송수신하는 무선 통신 장치
KR102427572B1 (ko) 2018-06-18 2022-08-01 삼성전자주식회사 스위치를 통해 복수개의 반송파 주파수를 이용한 반송파 집적을 수행하는 전자 장치 및 그의 동작 방법
JP2021048565A (ja) * 2019-09-20 2021-03-25 株式会社村田製作所 高周波モジュールおよび通信装置
KR102653890B1 (ko) * 2019-10-18 2024-04-02 삼성전자주식회사 반송파 집성을 지원하는 rfic 및 이를 포함하는 무선 통신 장치
JP2021083003A (ja) * 2019-11-21 2021-05-27 株式会社村田製作所 高周波モジュールおよび通信装置
KR102719060B1 (ko) * 2019-12-26 2024-10-17 삼성전자 주식회사 안테나 모듈 및 이를 이용하는 전자 장치
WO2022039051A1 (ja) * 2020-08-21 2022-02-24 株式会社村田製作所 高周波回路
CN219893312U (zh) * 2020-10-28 2023-10-24 株式会社村田制作所 高频模块和通信装置
KR20230056449A (ko) * 2021-10-20 2023-04-27 삼성전자주식회사 증폭기 모듈을 포함하는 통신 회로와 그것을 포함한 전자 장치
KR20230057559A (ko) * 2021-10-22 2023-05-02 삼성전자주식회사 증폭기 모듈을 포함하는 통신 회로와 그것을 포함한 전자 장치
EP4354741A1 (en) * 2022-10-10 2024-04-17 Nokia Technologies Oy Apparatus and method for sensing and communications
US20240311323A1 (en) * 2023-03-16 2024-09-19 Samsung Electronics Co., Ltd. Fanout connections on a high-performance computing device

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Also Published As

Publication number Publication date
KR20180039059A (ko) 2018-04-17
US20170040947A1 (en) 2017-02-09
US10333469B2 (en) 2019-06-25
EP3332484B1 (en) 2019-08-21
WO2017027120A1 (en) 2017-02-16
KR102504244B1 (ko) 2023-02-24
US20180102740A1 (en) 2018-04-12
CN107925423B (zh) 2020-08-21
CN107925423A (zh) 2018-04-17
CA2990200A1 (en) 2017-02-16
BR112018002503A2 (pt) 2018-09-18
EP3332484A1 (en) 2018-06-13
JP2018523947A (ja) 2018-08-23
US9843291B2 (en) 2017-12-12

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