JP6971826B2 - 固体撮像装置及びその製造方法 - Google Patents

固体撮像装置及びその製造方法 Download PDF

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JP6971826B2
JP6971826B2 JP2017241961A JP2017241961A JP6971826B2 JP 6971826 B2 JP6971826 B2 JP 6971826B2 JP 2017241961 A JP2017241961 A JP 2017241961A JP 2017241961 A JP2017241961 A JP 2017241961A JP 6971826 B2 JP6971826 B2 JP 6971826B2
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JP2019110429A (ja
JP2019110429A5 (enExample
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悟志 松澤
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2017241961A priority Critical patent/JP6971826B2/ja
Priority to US16/218,702 priority patent/US10714518B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2017241961A 2017-12-18 2017-12-18 固体撮像装置及びその製造方法 Active JP6971826B2 (ja)

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Application Number Priority Date Filing Date Title
JP2017241961A JP6971826B2 (ja) 2017-12-18 2017-12-18 固体撮像装置及びその製造方法
US16/218,702 US10714518B2 (en) 2017-12-18 2018-12-13 Imaging device

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Application Number Priority Date Filing Date Title
JP2017241961A JP6971826B2 (ja) 2017-12-18 2017-12-18 固体撮像装置及びその製造方法

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JP2019110429A JP2019110429A (ja) 2019-07-04
JP2019110429A5 JP2019110429A5 (enExample) 2020-10-15
JP6971826B2 true JP6971826B2 (ja) 2021-11-24

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US (1) US10714518B2 (enExample)
JP (1) JP6971826B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10833473B2 (en) 2018-03-27 2020-11-10 Nichia Corporation Semiconductor device, semiconductor device package, and manufacturing methods thereof
JP7544697B2 (ja) 2019-06-13 2024-09-03 福田金属箔粉工業株式会社 積層造形用銅粉末、積層造形体の製造方法
KR20210092122A (ko) * 2020-01-14 2021-07-23 파워테크 테크놀로지 인코포레이티드 후면 증착형 차폐층을 갖는 배치-타입 반도체 패키징 구조물 및 그 제조 방법
TW202347531A (zh) * 2022-05-11 2023-12-01 日商索尼半導體解決方案公司 半導體裝置、電子機器及半導體裝置之製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292661A (ja) 1985-10-18 1987-04-28 Fuji Photo Film Co Ltd 放射線画像情報記録再生方法
JP4641578B2 (ja) 1999-10-12 2011-03-02 ソニー株式会社 光学モジュール、撮像装置及びカメラシステム
JP4241160B2 (ja) * 2002-04-22 2009-03-18 富士フイルム株式会社 固体撮像装置の製造方法
JP4009546B2 (ja) 2003-03-24 2007-11-14 オリンパス株式会社 固体撮像素子カメラユニットとその組立方法
JP2005005614A (ja) 2003-06-13 2005-01-06 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR100557140B1 (ko) 2003-09-16 2006-03-03 삼성전자주식회사 커넥터와 그를 이용한 이미지 센서 모듈
US7863702B2 (en) * 2004-06-10 2011-01-04 Samsung Electronics Co., Ltd. Image sensor package and method of manufacturing the same
US7645635B2 (en) * 2004-08-16 2010-01-12 Micron Technology, Inc. Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages
JP2006128755A (ja) 2004-10-26 2006-05-18 Matsushita Electric Ind Co Ltd レンズ一体型撮像ユニットおよびこれを備えた撮像装置
WO2006073085A1 (ja) * 2005-01-04 2006-07-13 I Square Reserch Co., Ltd. 固体撮像装置及びその製造方法
JP2007043628A (ja) * 2005-08-05 2007-02-15 Hitachi Maxell Ltd カメラモジュール
JP5746919B2 (ja) * 2011-06-10 2015-07-08 新光電気工業株式会社 半導体パッケージ

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JP2019110429A (ja) 2019-07-04
US20190189659A1 (en) 2019-06-20
US10714518B2 (en) 2020-07-14

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