JP6968095B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP6968095B2
JP6968095B2 JP2018553035A JP2018553035A JP6968095B2 JP 6968095 B2 JP6968095 B2 JP 6968095B2 JP 2018553035 A JP2018553035 A JP 2018553035A JP 2018553035 A JP2018553035 A JP 2018553035A JP 6968095 B2 JP6968095 B2 JP 6968095B2
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Japan
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electrode
layer
semiconductor layer
light emitting
reflective layer
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Japanese (ja)
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JP2019503087A5 (enExample
JP2019503087A (ja
Inventor
ホン，ジュンヒ
ソ，ジェウォン
Original Assignee
スージョウ レキン セミコンダクター カンパニー リミテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
JP2018553035A 2015-12-28 2016-12-26 発光素子 Active JP6968095B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2015-0187457 2015-12-28
KR1020150187457A KR102509144B1 (ko) 2015-12-28 2015-12-28 발광 소자
PCT/KR2016/015253 WO2017116094A1 (ko) 2015-12-28 2016-12-26 발광 소자

Publications (3)

Publication Number Publication Date
JP2019503087A JP2019503087A (ja) 2019-01-31
JP2019503087A5 JP2019503087A5 (enExample) 2020-02-06
JP6968095B2 true JP6968095B2 (ja) 2021-11-17

Family

ID=59225381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018553035A Active JP6968095B2 (ja) 2015-12-28 2016-12-26 発光素子

Country Status (5)

Country Link
US (1) US20190013441A1 (enExample)
JP (1) JP6968095B2 (enExample)
KR (1) KR102509144B1 (enExample)
CN (1) CN108431970B (enExample)
WO (1) WO2017116094A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102410809B1 (ko) * 2017-08-25 2022-06-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US20210167252A1 (en) * 2018-07-04 2021-06-03 Lg Innotek Co., Ltd. Semiconductor device and manufacturing method therefor
CN112470297B (zh) * 2019-06-06 2022-09-06 新唐科技日本株式会社 半导体发光元件以及半导体发光装置
CN110931619A (zh) * 2019-11-20 2020-03-27 厦门士兰明镓化合物半导体有限公司 倒装led芯片及其制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5012187B2 (ja) 2007-05-09 2012-08-29 豊田合成株式会社 発光装置
JP5305790B2 (ja) * 2008-08-28 2013-10-02 株式会社東芝 半導体発光素子
JP5021693B2 (ja) * 2009-04-14 2012-09-12 スタンレー電気株式会社 半導体発光素子
JP5633477B2 (ja) * 2010-08-27 2014-12-03 豊田合成株式会社 発光素子
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
JP2013021175A (ja) * 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
KR101901850B1 (ko) * 2012-01-05 2018-09-27 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 모듈
KR101974153B1 (ko) * 2012-06-12 2019-04-30 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 조명 시스템
JP2014096539A (ja) * 2012-11-12 2014-05-22 Tokuyama Corp 紫外発光素子、および発光構造体
EP2755245A3 (en) * 2013-01-14 2016-05-04 LG Innotek Co., Ltd. Light emitting device
KR20140103397A (ko) * 2013-02-15 2014-08-27 삼성전자주식회사 반도체 발광 소자
KR20150039518A (ko) * 2013-10-02 2015-04-10 엘지이노텍 주식회사 발광소자
KR101553639B1 (ko) * 2013-10-16 2015-09-16 주식회사 세미콘라이트 반도체 발광소자
KR20150062179A (ko) * 2013-11-28 2015-06-08 일진엘이디(주) 확장된 반사층을 가진 발광 다이오드
JP6323176B2 (ja) * 2014-05-30 2018-05-16 日亜化学工業株式会社 発光装置の製造方法

Also Published As

Publication number Publication date
US20190013441A1 (en) 2019-01-10
CN108431970B (zh) 2022-02-15
KR20170077513A (ko) 2017-07-06
JP2019503087A (ja) 2019-01-31
KR102509144B1 (ko) 2023-03-13
WO2017116094A1 (ko) 2017-07-06
CN108431970A (zh) 2018-08-21

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