JP2019503087A5 - - Google Patents
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- Publication number
- JP2019503087A5 JP2019503087A5 JP2018553035A JP2018553035A JP2019503087A5 JP 2019503087 A5 JP2019503087 A5 JP 2019503087A5 JP 2018553035 A JP2018553035 A JP 2018553035A JP 2018553035 A JP2018553035 A JP 2018553035A JP 2019503087 A5 JP2019503087 A5 JP 2019503087A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- electrode
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 238000000926 separation method Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0187457 | 2015-12-28 | ||
| KR1020150187457A KR102509144B1 (ko) | 2015-12-28 | 2015-12-28 | 발광 소자 |
| PCT/KR2016/015253 WO2017116094A1 (ko) | 2015-12-28 | 2016-12-26 | 발광 소자 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019503087A JP2019503087A (ja) | 2019-01-31 |
| JP2019503087A5 true JP2019503087A5 (enExample) | 2020-02-06 |
| JP6968095B2 JP6968095B2 (ja) | 2021-11-17 |
Family
ID=59225381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018553035A Active JP6968095B2 (ja) | 2015-12-28 | 2016-12-26 | 発光素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20190013441A1 (enExample) |
| JP (1) | JP6968095B2 (enExample) |
| KR (1) | KR102509144B1 (enExample) |
| CN (1) | CN108431970B (enExample) |
| WO (1) | WO2017116094A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102410809B1 (ko) * | 2017-08-25 | 2022-06-20 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
| US20210167252A1 (en) * | 2018-07-04 | 2021-06-03 | Lg Innotek Co., Ltd. | Semiconductor device and manufacturing method therefor |
| CN112470297B (zh) * | 2019-06-06 | 2022-09-06 | 新唐科技日本株式会社 | 半导体发光元件以及半导体发光装置 |
| CN110931619A (zh) * | 2019-11-20 | 2020-03-27 | 厦门士兰明镓化合物半导体有限公司 | 倒装led芯片及其制造方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5012187B2 (ja) | 2007-05-09 | 2012-08-29 | 豊田合成株式会社 | 発光装置 |
| JP5305790B2 (ja) * | 2008-08-28 | 2013-10-02 | 株式会社東芝 | 半導体発光素子 |
| JP5021693B2 (ja) * | 2009-04-14 | 2012-09-12 | スタンレー電気株式会社 | 半導体発光素子 |
| JP5633477B2 (ja) * | 2010-08-27 | 2014-12-03 | 豊田合成株式会社 | 発光素子 |
| KR101142965B1 (ko) * | 2010-09-24 | 2012-05-08 | 서울반도체 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
| JP2013021175A (ja) * | 2011-07-12 | 2013-01-31 | Toshiba Corp | 半導体発光素子 |
| KR101901850B1 (ko) * | 2012-01-05 | 2018-09-27 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지 및 발광 모듈 |
| KR101974153B1 (ko) * | 2012-06-12 | 2019-04-30 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 조명 시스템 |
| JP2014096539A (ja) * | 2012-11-12 | 2014-05-22 | Tokuyama Corp | 紫外発光素子、および発光構造体 |
| EP2755245A3 (en) * | 2013-01-14 | 2016-05-04 | LG Innotek Co., Ltd. | Light emitting device |
| KR20140103397A (ko) * | 2013-02-15 | 2014-08-27 | 삼성전자주식회사 | 반도체 발광 소자 |
| KR20150039518A (ko) * | 2013-10-02 | 2015-04-10 | 엘지이노텍 주식회사 | 발광소자 |
| KR101553639B1 (ko) * | 2013-10-16 | 2015-09-16 | 주식회사 세미콘라이트 | 반도체 발광소자 |
| KR20150062179A (ko) * | 2013-11-28 | 2015-06-08 | 일진엘이디(주) | 확장된 반사층을 가진 발광 다이오드 |
| JP6323176B2 (ja) * | 2014-05-30 | 2018-05-16 | 日亜化学工業株式会社 | 発光装置の製造方法 |
-
2015
- 2015-12-28 KR KR1020150187457A patent/KR102509144B1/ko active Active
-
2016
- 2016-12-26 WO PCT/KR2016/015253 patent/WO2017116094A1/ko not_active Ceased
- 2016-12-26 CN CN201680077003.2A patent/CN108431970B/zh active Active
- 2016-12-26 US US16/066,511 patent/US20190013441A1/en not_active Abandoned
- 2016-12-26 JP JP2018553035A patent/JP6968095B2/ja active Active