JP6956710B2 - 化学機械研磨キャリアヘッド用の外部クランプリング - Google Patents

化学機械研磨キャリアヘッド用の外部クランプリング Download PDF

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Publication number
JP6956710B2
JP6956710B2 JP2018518965A JP2018518965A JP6956710B2 JP 6956710 B2 JP6956710 B2 JP 6956710B2 JP 2018518965 A JP2018518965 A JP 2018518965A JP 2018518965 A JP2018518965 A JP 2018518965A JP 6956710 B2 JP6956710 B2 JP 6956710B2
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Japan
Prior art keywords
wall
clamp ring
external clamp
cylindrical
hydrophobic layer
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JP2018518965A
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English (en)
Japanese (ja)
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JP2018531804A5 (enExample
JP2018531804A (ja
Inventor
パトリック アラ
ボー ビー ディン
ヨンチー フー
サイモン ヤヴェルバーグ
マッツ ラーション
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2018531804A5 publication Critical patent/JP2018531804A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018518965A 2015-10-16 2016-08-04 化学機械研磨キャリアヘッド用の外部クランプリング Active JP6956710B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562242946P 2015-10-16 2015-10-16
US62/242,946 2015-10-16
US15/176,998 2016-06-08
US15/176,998 US10029346B2 (en) 2015-10-16 2016-06-08 External clamp ring for a chemical mechanical polishing carrier head
PCT/US2016/045626 WO2017065861A1 (en) 2015-10-16 2016-08-04 External clamp ring for a chemical mechanical polishing carrier head

Publications (3)

Publication Number Publication Date
JP2018531804A JP2018531804A (ja) 2018-11-01
JP2018531804A5 JP2018531804A5 (enExample) 2019-09-12
JP6956710B2 true JP6956710B2 (ja) 2021-11-02

Family

ID=58517708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018518965A Active JP6956710B2 (ja) 2015-10-16 2016-08-04 化学機械研磨キャリアヘッド用の外部クランプリング

Country Status (7)

Country Link
US (1) US10029346B2 (enExample)
EP (1) EP3363041B1 (enExample)
JP (1) JP6956710B2 (enExample)
KR (1) KR102640177B1 (enExample)
CN (2) CN206602095U (enExample)
TW (2) TWM544392U (enExample)
WO (1) WO2017065861A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7003838B2 (ja) * 2018-05-17 2022-01-21 株式会社Sumco 研磨ヘッド及びこれを用いたウェーハ研磨装置及び研磨方法
CN108857909A (zh) * 2018-07-20 2018-11-23 宁波江丰电子材料股份有限公司 一种用于cmp保持环粘接面的加工方法以及cmp保持环的制备方法
JP7374710B2 (ja) * 2019-10-25 2023-11-07 株式会社荏原製作所 研磨方法および研磨装置
CN110842766B (zh) * 2019-11-26 2022-07-12 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 一种芯片装载机构及芯片研抛系统
CN116000784B (zh) * 2022-12-29 2024-08-16 西安奕斯伟材料科技股份有限公司 硅片双面抛光装置的承载件及硅片双面抛光装置

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US6024630A (en) 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
US6183354B1 (en) * 1996-11-08 2001-02-06 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
US5990012A (en) 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
US6436228B1 (en) 1998-05-15 2002-08-20 Applied Materials, Inc. Substrate retainer
US6159079A (en) 1998-09-08 2000-12-12 Applied Materials, Inc. Carrier head for chemical mechanical polishing a substrate
US6132298A (en) * 1998-11-25 2000-10-17 Applied Materials, Inc. Carrier head with edge control for chemical mechanical polishing
US6165058A (en) 1998-12-09 2000-12-26 Applied Materials, Inc. Carrier head for chemical mechanical polishing
US6444326B1 (en) * 1999-03-05 2002-09-03 Restek Corporation Surface modification of solid supports through the thermal decomposition and functionalization of silanes
US6450868B1 (en) * 2000-03-27 2002-09-17 Applied Materials, Inc. Carrier head with multi-part flexible membrane
US6602114B1 (en) * 2000-05-19 2003-08-05 Applied Materials Inc. Multilayer retaining ring for chemical mechanical polishing
US20040005842A1 (en) * 2000-07-25 2004-01-08 Chen Hung Chih Carrier head with flexible membrane
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US6872130B1 (en) 2001-12-28 2005-03-29 Applied Materials Inc. Carrier head with non-contact retainer
US6945845B2 (en) 2003-03-04 2005-09-20 Applied Materials, Inc. Chemical mechanical polishing apparatus with non-conductive elements
JP4086722B2 (ja) * 2003-06-24 2008-05-14 株式会社荏原製作所 基板保持装置及び研磨装置
US20070049164A1 (en) 2005-08-26 2007-03-01 Thomson Clifford O Polishing pad and method for manufacturing polishing pads
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JP2009034745A (ja) * 2007-07-31 2009-02-19 Nippon Seimitsu Denshi Co Ltd Ｃｍｐ装置用リテーナリング
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Also Published As

Publication number Publication date
TW201714705A (zh) 2017-05-01
KR20180058838A (ko) 2018-06-01
EP3363041B1 (en) 2023-06-07
US10029346B2 (en) 2018-07-24
EP3363041A4 (en) 2019-06-12
CN106965077A (zh) 2017-07-21
WO2017065861A1 (en) 2017-04-20
KR102640177B1 (ko) 2024-02-22
US20170106496A1 (en) 2017-04-20
JP2018531804A (ja) 2018-11-01
TWI680828B (zh) 2020-01-01
TWM544392U (zh) 2017-07-01
EP3363041A1 (en) 2018-08-22
CN206602095U (zh) 2017-10-31
CN106965077B (zh) 2021-07-30

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