JP6942052B2 - レジスト組成物およびレジストパターン形成方法 - Google Patents
レジスト組成物およびレジストパターン形成方法 Download PDFInfo
- Publication number
- JP6942052B2 JP6942052B2 JP2017545451A JP2017545451A JP6942052B2 JP 6942052 B2 JP6942052 B2 JP 6942052B2 JP 2017545451 A JP2017545451 A JP 2017545451A JP 2017545451 A JP2017545451 A JP 2017545451A JP 6942052 B2 JP6942052 B2 JP 6942052B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- atom
- acid
- substituent
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/0325—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polysaccharides, e.g. cellulose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20150144911 | 2015-10-16 | ||
KR10-2015-0144911 | 2015-10-16 | ||
PCT/JP2016/080347 WO2017065207A1 (ja) | 2015-10-16 | 2016-10-13 | レジスト組成物およびレジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017065207A1 JPWO2017065207A1 (ja) | 2018-08-02 |
JP6942052B2 true JP6942052B2 (ja) | 2021-09-29 |
Family
ID=58517235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017545451A Active JP6942052B2 (ja) | 2015-10-16 | 2016-10-13 | レジスト組成物およびレジストパターン形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11150554B2 (zh) |
JP (1) | JP6942052B2 (zh) |
TW (1) | TWI771277B (zh) |
WO (1) | WO2017065207A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017170134A1 (ja) * | 2016-03-31 | 2017-10-05 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP7333325B2 (ja) * | 2018-08-29 | 2023-08-24 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
JP7156205B2 (ja) * | 2018-08-29 | 2022-10-19 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP7376269B2 (ja) * | 2019-07-25 | 2023-11-08 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP7058711B1 (ja) * | 2020-12-16 | 2022-04-22 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005274647A (ja) * | 2004-03-23 | 2005-10-06 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP2006251551A (ja) * | 2005-03-11 | 2006-09-21 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法。 |
DE602006004413D1 (de) | 2005-09-26 | 2009-02-05 | Fujifilm Corp | Positive lichtempfindliche Zusammensetzung und Verfahren zur Strukturformung damit |
JP2007114765A (ja) * | 2005-09-26 | 2007-05-10 | Fujifilm Corp | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
US7851130B2 (en) | 2006-09-19 | 2010-12-14 | Fujifilm Corporation | Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition |
JP4742001B2 (ja) * | 2006-09-19 | 2011-08-10 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
JP5140354B2 (ja) | 2006-09-19 | 2013-02-06 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
KR20120032024A (ko) * | 2007-05-23 | 2012-04-04 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 |
TWI391781B (zh) * | 2007-11-19 | 2013-04-01 | Tokyo Ohka Kogyo Co Ltd | 光阻組成物,光阻圖型之形成方法,新穎化合物及酸產生劑 |
JP5358112B2 (ja) | 2008-03-28 | 2013-12-04 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
TWI452444B (zh) * | 2008-07-14 | 2014-09-11 | Jsr Corp | 光阻圖型不溶化樹脂組成物及使用其之光阻圖型形成方法 |
WO2011030737A1 (ja) | 2009-09-11 | 2011-03-17 | Jsr株式会社 | 感放射線性組成物及び新規化合物 |
KR101800043B1 (ko) * | 2010-05-20 | 2017-11-21 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 중합체 및 화합물 |
JP5754444B2 (ja) | 2010-11-26 | 2015-07-29 | Jsr株式会社 | 感放射線性組成物 |
JP5725041B2 (ja) * | 2011-01-11 | 2015-05-27 | Jsr株式会社 | 感放射線性樹脂組成物及び感放射線性酸発生剤 |
JP5862657B2 (ja) | 2011-03-31 | 2016-02-16 | Jsr株式会社 | フォトレジスト組成物 |
WO2013140969A1 (ja) | 2012-03-19 | 2013-09-26 | Jsr株式会社 | フォトレジスト組成物、化合物及びその製造方法 |
JP6155013B2 (ja) * | 2012-11-19 | 2017-06-28 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP6334876B2 (ja) * | 2012-12-26 | 2018-05-30 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法 |
JP6287466B2 (ja) * | 2013-04-08 | 2018-03-07 | Jsr株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP6421449B2 (ja) | 2013-05-20 | 2018-11-14 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、酸発生体及び化合物 |
WO2015025859A1 (ja) * | 2013-08-20 | 2015-02-26 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤、酸拡散制御剤及び化合物 |
JP6241212B2 (ja) | 2013-11-06 | 2017-12-06 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生体及び化合物 |
JP6046646B2 (ja) | 2014-01-10 | 2016-12-21 | 信越化学工業株式会社 | オニウム塩、化学増幅型ポジ型レジスト組成物、及びパターン形成方法 |
-
2016
- 2016-10-13 JP JP2017545451A patent/JP6942052B2/ja active Active
- 2016-10-13 US US15/766,734 patent/US11150554B2/en active Active
- 2016-10-13 WO PCT/JP2016/080347 patent/WO2017065207A1/ja active Application Filing
- 2016-10-14 TW TW105133293A patent/TWI771277B/zh active
Also Published As
Publication number | Publication date |
---|---|
US11150554B2 (en) | 2021-10-19 |
JPWO2017065207A1 (ja) | 2018-08-02 |
WO2017065207A1 (ja) | 2017-04-20 |
KR20170045136A (ko) | 2017-04-26 |
TW201727365A (zh) | 2017-08-01 |
US20180299778A1 (en) | 2018-10-18 |
TWI771277B (zh) | 2022-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6307290B2 (ja) | レジスト組成物、レジストパターン形成方法 | |
JP6942052B2 (ja) | レジスト組成物およびレジストパターン形成方法 | |
JP6106432B2 (ja) | レジスト組成物、レジストパターン形成方法、高分子化合物 | |
JP6670555B2 (ja) | レジスト組成物及びレジストパターン形成方法 | |
JP6435109B2 (ja) | レジスト組成物、レジストパターン形成方法 | |
JP6832104B2 (ja) | レジスト組成物及びレジストパターン形成方法 | |
JP6483397B2 (ja) | レジストパターン形成方法 | |
JP2015169843A (ja) | レジスト組成物及びレジストパターン形成方法 | |
JP6782540B2 (ja) | レジスト組成物、レジストパターン形成方法及び化合物 | |
JP6482286B2 (ja) | レジスト組成物及びレジストパターン形成方法 | |
KR102483021B1 (ko) | 레지스트 조성물, 레지스트 패턴 형성 방법, 광 반응성 퀀처 및 화합물 | |
JP6890454B2 (ja) | レジスト組成物及びレジストパターン形成方法、並びに、化合物及び酸拡散制御剤 | |
JPWO2020054449A1 (ja) | レジスト組成物及びレジストパターン形成方法 | |
JP6868351B2 (ja) | レジストパターン形成方法、及びパターン厚肉化用ポリマー組成物 | |
KR102612639B1 (ko) | 레지스트 조성물 및 레지스트 패턴 형성 방법 | |
WO2018131669A1 (ja) | レジスト組成物及びレジストパターン形成方法 | |
JP7055215B2 (ja) | レジスト組成物及びレジストパターン形成方法 | |
JP6140496B2 (ja) | レジスト組成物、レジストパターン形成方法 | |
KR102675211B1 (ko) | 레지스트 조성물 및 레지스트 패턴 형성 방법 | |
JP6757626B2 (ja) | レジストパターン形成方法、及びパターン厚肉化用ポリマー組成物 | |
JP6872321B2 (ja) | レジストパターン形成方法、及びパターン厚肉化用ポリマー組成物 | |
JP6757618B2 (ja) | レジストパターン厚肉化用ポリマー組成物、及びレジストパターン形成方法 | |
JP6823992B2 (ja) | レジストパターン形成方法、及びパターン厚肉化用ポリマー組成物 | |
JP6757623B2 (ja) | レジストパターン厚肉化用ポリマー組成物、及びレジストパターン形成方法 | |
JP6722433B2 (ja) | レジストパターン形成方法及びパターン厚肉化用ポリマー組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190708 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200714 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200909 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210224 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210413 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210810 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210907 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6942052 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |