JP6922982B2 - 石英ガラスルツボ - Google Patents
石英ガラスルツボ Download PDFInfo
- Publication number
- JP6922982B2 JP6922982B2 JP2019527597A JP2019527597A JP6922982B2 JP 6922982 B2 JP6922982 B2 JP 6922982B2 JP 2019527597 A JP2019527597 A JP 2019527597A JP 2019527597 A JP2019527597 A JP 2019527597A JP 6922982 B2 JP6922982 B2 JP 6922982B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- bubble content
- single crystal
- straight body
- quartz glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 122
- 239000002344 surface layer Substances 0.000 claims description 38
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 124
- 229910052710 silicon Inorganic materials 0.000 description 113
- 239000010703 silicon Substances 0.000 description 113
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 112
- 239000010410 layer Substances 0.000 description 46
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 40
- 238000000034 method Methods 0.000 description 34
- 239000000155 melt Substances 0.000 description 25
- 230000007547 defect Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 238000009826 distribution Methods 0.000 description 16
- 239000010453 quartz Substances 0.000 description 16
- 239000000843 powder Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000009172 bursting Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Description
直径32インチの石英ガラスルツボのサンプルS1を用意し、その内表面近傍の気泡含有率の分布を測定した。気泡含有率の測定には自動測定機を用い、各測定点において5×5mmの領域内の内表面から深さ約0.5mmまで範囲に存在する気泡のサイズを特定し、気泡含有率を算出した。
直径24インチの石英ガラスルツボのサンプルS9を用意し、その内表面近傍の気泡含有率の分布を測定したところ、ルツボサンプルS9の気泡含有率は、底部:0%、コーナー部:0〜0.12%、直胴部の下部:0.15〜0.19%、直胴部の上部:0.20〜0.50%であった。24インチルツボの底部中心を基準とするルツボの各部位の範囲は、底部:0〜240mm、コーナー部:240〜400mm、直胴部の下部:400〜510mm、直胴部の上部:510〜620mmであった。ルツボサンプルS9の各部位における気泡含有率の最大値を図5のグラフに示す。
直径32インチの石英ガラスルツボの気泡含有率の分布と気泡サイズとの相関について評価した。その結果、この石英ガラスルツボの気泡含有率は、底部ではほぼ0%、コーナー部では0.12〜0.21%、直胴部の下部では0.21〜0.52%、直胴部の上部では0.32〜0.59%であった。このルツボサンプルの各部位における気泡含有率の最大値を図6のグラフに示す。
1a 直胴部
1a1 直胴部の上部
1a2 直胴部の下部
1b 底部
1c コーナー部
10a ルツボの内表面
10b ルツボの外表面
11 不透明層
12 透明層
20 シリコン単結晶
20a 固液界面
21 シリコン融液
21a 融液面
Claims (4)
- 円筒状の直胴部と、湾曲した底部と、前記直胴部と前記底部との間に設けられたコーナー部とを有し、
前記直胴部の上部における内表面から深さ0.5mmまでの内側表層部の気泡含有率は0.2%以上2%以下であり、
前記直胴部の下部における前記内側表層部の気泡含有率は0.1%よりも大きく前記直胴部の上部の気泡含有率の下限値の1.3倍以下であり、
前記コーナー部における前記内側表層部の気泡含有率は0.1%よりも大きく0.5%以下であり、
前記底部における前記内側表層部の気泡含有率は0.1%以下であり、
前記コーナー部から前記直胴部の上部に向かって直径が300μm以上500μm以下の大型サイズの気泡の割合が増加することを特徴とする石英ガラスルツボ。 - 前記内側表層部に含まれる気泡の平均直径は50μm以上500μm以下である、請求項1に記載の石英ガラスルツボ。
- 直径が500μmよりも大きな気泡が存在しない、請求項2に記載の石英ガラスルツボ。
- ルツボ内表面の表面粗さRaが0.001〜0.2μmの範囲にある、請求項1乃至3のいずれか一項に記載の石英ガラスルツボ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017131408 | 2017-07-04 | ||
JP2017131408 | 2017-07-04 | ||
PCT/JP2018/022226 WO2019009018A1 (ja) | 2017-07-04 | 2018-06-11 | 石英ガラスルツボ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019009018A1 JPWO2019009018A1 (ja) | 2020-06-18 |
JP6922982B2 true JP6922982B2 (ja) | 2021-08-18 |
Family
ID=64950897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019527597A Active JP6922982B2 (ja) | 2017-07-04 | 2018-06-11 | 石英ガラスルツボ |
Country Status (8)
Country | Link |
---|---|
US (1) | US20200123676A1 (ja) |
JP (1) | JP6922982B2 (ja) |
KR (1) | KR102342042B1 (ja) |
CN (1) | CN110945164A (ja) |
DE (1) | DE112018003457T5 (ja) |
SG (1) | SG11201912430UA (ja) |
TW (1) | TWI675945B (ja) |
WO (1) | WO2019009018A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7157932B2 (ja) * | 2019-01-11 | 2022-10-21 | 株式会社Sumco | シリカガラスルツボの製造装置および製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2923720B2 (ja) | 1992-12-26 | 1999-07-26 | 三菱マテリアルクォーツ株式会社 | シリコン単結晶引上げ用石英ルツボ |
JP4390461B2 (ja) * | 2003-02-21 | 2009-12-24 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ及びこれを用いたシリコン単結晶の引き上げ方法 |
JP4726138B2 (ja) | 2006-12-28 | 2011-07-20 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ |
JP5273512B2 (ja) | 2007-10-25 | 2013-08-28 | 株式会社Sumco | 石英ガラスルツボとその製造方法および用途 |
CN104947189A (zh) * | 2008-03-31 | 2015-09-30 | 日本超精石英株式会社 | 石英玻璃坩埚及其制造方法 |
JP4987029B2 (ja) * | 2009-04-02 | 2012-07-25 | ジャパンスーパークォーツ株式会社 | シリコン単結晶引き上げ用石英ガラスルツボ |
-
2018
- 2018-06-11 JP JP2019527597A patent/JP6922982B2/ja active Active
- 2018-06-11 DE DE112018003457.7T patent/DE112018003457T5/de active Pending
- 2018-06-11 US US16/622,179 patent/US20200123676A1/en not_active Abandoned
- 2018-06-11 WO PCT/JP2018/022226 patent/WO2019009018A1/ja active Application Filing
- 2018-06-11 SG SG11201912430UA patent/SG11201912430UA/en unknown
- 2018-06-11 KR KR1020197038784A patent/KR102342042B1/ko active IP Right Grant
- 2018-06-11 CN CN201880044923.3A patent/CN110945164A/zh active Pending
- 2018-07-04 TW TW107123076A patent/TWI675945B/zh active
Also Published As
Publication number | Publication date |
---|---|
JPWO2019009018A1 (ja) | 2020-06-18 |
US20200123676A1 (en) | 2020-04-23 |
SG11201912430UA (en) | 2020-01-30 |
WO2019009018A1 (ja) | 2019-01-10 |
CN110945164A (zh) | 2020-03-31 |
KR102342042B1 (ko) | 2021-12-22 |
TWI675945B (zh) | 2019-11-01 |
TW201907056A (zh) | 2019-02-16 |
DE112018003457T5 (de) | 2020-03-19 |
KR20200015613A (ko) | 2020-02-12 |
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