JP6917462B2 - ウェハ形状測定方法及びシステム - Google Patents

ウェハ形状測定方法及びシステム Download PDF

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Publication number
JP6917462B2
JP6917462B2 JP2019537105A JP2019537105A JP6917462B2 JP 6917462 B2 JP6917462 B2 JP 6917462B2 JP 2019537105 A JP2019537105 A JP 2019537105A JP 2019537105 A JP2019537105 A JP 2019537105A JP 6917462 B2 JP6917462 B2 JP 6917462B2
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Prior art keywords
wafer
correction model
thickness
stack correction
shape
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Japanese (ja)
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JP2020503526A5 (cg-RX-API-DMAC7.html
JP2020503526A (ja
Inventor
ヘレン リウ
ヘレン リウ
アンドリュー ゼン
アンドリュー ゼン
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045—Correction of measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Seats For Vehicles (AREA)
JP2019537105A 2017-01-09 2018-01-05 ウェハ形状測定方法及びシステム Active JP6917462B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762443815P 2017-01-09 2017-01-09
US62/443,815 2017-01-09
US15/649,259 2017-07-13
US15/649,259 US10571248B2 (en) 2017-01-09 2017-07-13 Transparent film error correction pattern in wafer geometry system
PCT/US2018/012673 WO2018129385A1 (en) 2017-01-09 2018-01-05 Transparent film error correction pattern in wafer geometry system

Publications (3)

Publication Number Publication Date
JP2020503526A JP2020503526A (ja) 2020-01-30
JP2020503526A5 JP2020503526A5 (cg-RX-API-DMAC7.html) 2021-02-12
JP6917462B2 true JP6917462B2 (ja) 2021-08-11

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JP2019537105A Active JP6917462B2 (ja) 2017-01-09 2018-01-05 ウェハ形状測定方法及びシステム

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Country Link
US (1) US10571248B2 (cg-RX-API-DMAC7.html)
EP (1) EP3549159B1 (cg-RX-API-DMAC7.html)
JP (1) JP6917462B2 (cg-RX-API-DMAC7.html)
KR (1) KR102301560B1 (cg-RX-API-DMAC7.html)
CN (1) CN110419098B (cg-RX-API-DMAC7.html)
SG (1) SG11201906177WA (cg-RX-API-DMAC7.html)
TW (1) TWI752146B (cg-RX-API-DMAC7.html)
WO (1) WO2018129385A1 (cg-RX-API-DMAC7.html)

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US10317198B2 (en) * 2016-09-30 2019-06-11 Kla-Tencor Corporation Three-dimensional mapping of a wafer
WO2019029933A1 (en) * 2017-08-07 2019-02-14 Asml Netherlands B.V. COMPUTER METROLOGY
US10859371B2 (en) 2017-11-28 2020-12-08 Koh Young Technology Inc. Apparatus for inspecting substrate and method thereof
EP3489620B1 (en) * 2017-11-28 2023-06-07 Koh Young Technology Inc. Apparatus for inspecting substrate and method thereof
US11112234B2 (en) * 2018-03-07 2021-09-07 Applejack 199 L.P. Multi-probe gauge for slab characterization
JP6402273B1 (ja) * 2018-05-18 2018-10-10 大塚電子株式会社 光学測定装置及び光学測定方法
US11049720B2 (en) * 2018-10-19 2021-06-29 Kla Corporation Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films
EP3918384A1 (en) * 2019-01-31 2021-12-08 King Abdullah University of Science and Technology Light processing device based on multilayer nano-elements
US20250044073A1 (en) * 2023-08-04 2025-02-06 Orbotech Ltd. Thin film thickness adjustments for three-dimensional interferometric measurements

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US5042949A (en) 1989-03-17 1991-08-27 Greenberg Jeffrey S Optical profiler for films and substrates
US5129724A (en) * 1991-01-29 1992-07-14 Wyko Corporation Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample
US7324214B2 (en) 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US6847458B2 (en) 2003-03-20 2005-01-25 Phase Shift Technology, Inc. Method and apparatus for measuring the shape and thickness variation of polished opaque plates
JP4192038B2 (ja) * 2003-06-04 2008-12-03 東レエンジニアリング株式会社 表面形状および／または膜厚測定方法及びその装置
TWI358614B (en) * 2003-09-15 2012-02-21 Zygo Corp Triangulation methods and systems for profiling su
KR101159380B1 (ko) * 2004-03-11 2012-06-27 이코스비젼 시스팀스 엔.브이. 파면 조정 및 향상된 3?ｄ 측정을 위한 방법 및 장치
US7595891B2 (en) * 2005-07-09 2009-09-29 Kla-Tencor Corporation Measurement of the top surface of an object with/without transparent thin films in white light interferometry
GB0712605D0 (en) * 2007-06-28 2007-08-08 Microsharp Corp Ltd Optical film
CN101980986B (zh) * 2007-11-02 2016-04-27 北美Agc平板玻璃公司 用于薄膜光伏应用的透明导电氧化物涂层及其生产方法
US8068234B2 (en) 2009-02-18 2011-11-29 Kla-Tencor Corporation Method and apparatus for measuring shape or thickness information of a substrate
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WO2016152459A1 (ja) * 2015-03-24 2016-09-29 コニカミノルタ株式会社 ポリイミド系光学フィルム、その製造方法及び有機エレクトロルミネッセンスディスプレイ
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EP3150959B1 (en) * 2015-10-02 2018-12-26 Soitec Method for measuring thickness variations in a layer of a multilayer semiconductor structure

Also Published As

Publication number Publication date
SG11201906177WA (en) 2019-08-27
CN110419098A (zh) 2019-11-05
CN110419098B (zh) 2021-02-02
EP3549159B1 (en) 2024-08-07
EP3549159A4 (en) 2020-09-09
TWI752146B (zh) 2022-01-11
KR102301560B1 (ko) 2021-09-10
KR20190097281A (ko) 2019-08-20
EP3549159A1 (en) 2019-10-09
WO2018129385A1 (en) 2018-07-12
JP2020503526A (ja) 2020-01-30
US10571248B2 (en) 2020-02-25
US20180195855A1 (en) 2018-07-12
TW201839876A (zh) 2018-11-01

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