JP6910528B2 - 多層配線の形成方法および記憶媒体 - Google Patents
多層配線の形成方法および記憶媒体 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 61
- 238000003860 storage Methods 0.000 title claims description 16
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- 238000007772 electroless plating Methods 0.000 claims description 107
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- 239000012535 impurity Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 2
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- 239000002184 metal Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 16
- 238000005498 polishing Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
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- 229910045601 alloy Inorganic materials 0.000 description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000009623 Bosch process Methods 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
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- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
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- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
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Description
まずは、図1を参照しながら、第1実施形態に係る多層配線形成システム1の概略構成について説明する。図1は、本開示の第1実施形態による多層配線形成システム1の概略構成を示す図である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
次に、図2を参照しながら、無電解めっき処理ユニット16の概略構成について説明する。図2は、本開示の第1実施形態による無電解めっき処理ユニット16の構成を示す断面図である。無電解めっき処理ユニット16は、たとえば、ウェハWを1枚ずつ処理する枚葉式の処理ユニットとして構成される。
次に、図3を参照しながら、CMP処理ユニット17の概略構成について説明する。図3は、本開示の第1実施形態によるCMP処理ユニット17の構成を示す模式図である。CMP処理ユニット17は、たとえば、ウェハWを1枚ずつ処理する枚葉式の処理ユニットとして構成される。
次に、図4を参照しながら、熱処理ユニット18の概略構成について説明する。図4は、本開示の第1実施形態による熱処理ユニット18の構成を示す断面図である。熱処理ユニット18は、たとえば、ウェハWを1枚ずつ処理する枚葉式の処理ユニットとして構成される。
つづいて、図5A〜図5Cを参照しながら、第1実施形態に係る多層配線の形成処理の詳細について説明する。図5A〜図5Cは、本開示の第1実施形態による多層配線の形成処理を説明するための模式図(1)〜(3)である。
つづいて、図6A〜図6Cを参照しながら、第2実施形態に係る多層配線の形成処理の詳細について説明する。図6A〜図6Cは、本開示の第2実施形態による多層配線の形成処理を説明するための模式図(1)〜(3)である。
つづいて、図7および図8を参照しながら、各実施形態に係る多層配線の形成処理の詳細について説明する。図7は、本開示の第1実施形態による多層配線の形成処理における処理手順を示すフローチャートである。
1 多層配線形成システム
16 無電解めっき処理ユニット
17 CMP処理ユニット
18 熱処理ユニット
19 洗浄処理ユニット
21 制御部
50 配線
60 絶縁膜
61 酸化膜
70 ビア
72 側面
73 底面
80 無電解めっき膜
Claims (5)
- 基板の配線上に設けられる酸化膜を含む絶縁膜に形成され前記配線まで貫通するビアの底面に露出するバリア膜を触媒にして、前記酸化膜内に拡散しない無電解めっき膜を前記ビアの底面から形成し前記ビアを埋める工程
を含み、
前記配線は、Cuを含む
多層配線の形成方法。 - 前記無電解めっき膜は、CoおよびWを含む請求項1に記載の多層配線の形成方法。
- 前記無電解めっき膜は、Wを1〜20at%含有し、残部がCoおよび不可避不純物である請求項2に記載の多層配線の形成方法。
- 前記無電解めっき膜は、Niを含む請求項1に記載の多層配線の形成方法。
- コンピュータ上で動作し、多層配線形成システムを制御するプログラムが記憶されたコンピュータ読取可能な記憶媒体であって、
前記プログラムは、実行時に、請求項1〜4のいずれか一つに記載の多層配線の形成方法が行われるように、コンピュータに前記多層配線形成システムを制御させる
記憶媒体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018029174 | 2018-02-21 | ||
JP2018029174 | 2018-02-21 | ||
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