JP6903396B2 - 撮像素子及び撮像装置 - Google Patents

撮像素子及び撮像装置 Download PDF

Info

Publication number
JP6903396B2
JP6903396B2 JP2015202660A JP2015202660A JP6903396B2 JP 6903396 B2 JP6903396 B2 JP 6903396B2 JP 2015202660 A JP2015202660 A JP 2015202660A JP 2015202660 A JP2015202660 A JP 2015202660A JP 6903396 B2 JP6903396 B2 JP 6903396B2
Authority
JP
Japan
Prior art keywords
layer
image pickup
wire grid
polarizing element
grid polarizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015202660A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017076684A (ja
JP2017076684A5 (enExample
Inventor
丸山　康
康 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to JP2015202660A priority Critical patent/JP6903396B2/ja
Priority to US15/760,277 priority patent/US10861893B2/en
Priority to CN201680053546.0A priority patent/CN108028260B/zh
Priority to PCT/JP2016/004435 priority patent/WO2017064845A1/en
Publication of JP2017076684A publication Critical patent/JP2017076684A/ja
Publication of JP2017076684A5 publication Critical patent/JP2017076684A5/ja
Application granted granted Critical
Publication of JP6903396B2 publication Critical patent/JP6903396B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Polarising Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2015202660A 2015-10-14 2015-10-14 撮像素子及び撮像装置 Active JP6903396B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015202660A JP6903396B2 (ja) 2015-10-14 2015-10-14 撮像素子及び撮像装置
US15/760,277 US10861893B2 (en) 2015-10-14 2016-09-30 Imaging element and imaging apparatus
CN201680053546.0A CN108028260B (zh) 2015-10-14 2016-09-30 成像元件和成像装置
PCT/JP2016/004435 WO2017064845A1 (en) 2015-10-14 2016-09-30 Imaging element and imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015202660A JP6903396B2 (ja) 2015-10-14 2015-10-14 撮像素子及び撮像装置

Publications (3)

Publication Number Publication Date
JP2017076684A JP2017076684A (ja) 2017-04-20
JP2017076684A5 JP2017076684A5 (enExample) 2018-11-22
JP6903396B2 true JP6903396B2 (ja) 2021-07-14

Family

ID=57138097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015202660A Active JP6903396B2 (ja) 2015-10-14 2015-10-14 撮像素子及び撮像装置

Country Status (4)

Country Link
US (1) US10861893B2 (enExample)
JP (1) JP6903396B2 (enExample)
CN (1) CN108028260B (enExample)
WO (1) WO2017064845A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11284046B2 (en) 2018-05-14 2022-03-22 Sony Semiconductor Solutions Corporation Imaging element and imaging device for controlling polarization of incident light

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6833597B2 (ja) * 2017-04-11 2021-02-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
FR3066319B1 (fr) 2017-05-11 2019-09-13 Stmicroelectronics (Crolles 2) Sas Capteur d'image a defauts reduits
JP6931161B2 (ja) * 2017-05-25 2021-09-01 富士通株式会社 化合物半導体装置、赤外線検知器及び撮像装置
WO2018225367A1 (ja) * 2017-06-09 2018-12-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2018235416A1 (ja) * 2017-06-21 2018-12-27 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び固体撮像装置
JP2019040965A (ja) * 2017-08-24 2019-03-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法
US10224357B1 (en) 2017-09-07 2019-03-05 Visera Technologies Company Limited Image sensor packages
JP2019091745A (ja) 2017-11-13 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2019134229A (ja) * 2018-01-29 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2019159080A (ja) * 2018-03-13 2019-09-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2019198385A1 (ja) 2018-04-09 2019-10-17 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびその製造方法、電子機器
CN108919553B (zh) * 2018-07-26 2023-03-14 京东方科技集团股份有限公司 一种显示面板、显示装置及显示面板的制作方法
JP2020096011A (ja) * 2018-12-10 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
JP7293020B2 (ja) 2019-07-19 2023-06-19 キヤノン株式会社 撮像素子、およびこれを備える撮像装置
KR20210040654A (ko) * 2019-10-04 2021-04-14 에스케이하이닉스 주식회사 이미지 센싱 장치
KR102845551B1 (ko) * 2019-11-04 2025-08-14 삼성전자주식회사 이미지 센서
US11088196B2 (en) 2019-11-15 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Metal reflector grounding for noise reduction in light detector
DE102020102419A1 (de) 2020-01-31 2021-08-05 Carl Zeiss Microscopy Gmbh Partikelanalyse mit Lichtmikroskop und Mehrpixelpolarisationsfilter
KR102856409B1 (ko) * 2020-02-04 2025-09-05 에스케이하이닉스 주식회사 이미지 센싱 장치
TWI748693B (zh) * 2020-11-12 2021-12-01 晶瑞光電股份有限公司 Ｒ、ｇ、ｂ、ｉｒ之其中任意組合濾光結構及製作方法
US11996428B2 (en) 2021-03-03 2024-05-28 Taiwan Semiconductor Manufacturing Company Limited Optical blocking structures for black level correction pixels in an image sensor
US12027563B2 (en) * 2021-06-11 2024-07-02 Visera Technologies Company Limited Image sensor structure having filter layer and absorption wavelength tunable photoelectric layer and manufacturing method thereof
WO2023283913A1 (zh) * 2021-07-16 2023-01-19 福建晶安光电有限公司 偏振元件、发光二极管以及发光装置
CN114156296A (zh) * 2021-12-08 2022-03-08 武汉新芯集成电路制造有限公司 Bsi图像传感器及其制作方法
WO2025204244A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、および電子機器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007011047A1 (ja) * 2005-07-22 2007-01-25 Zeon Corporation グリッド偏光子及びその製法
JP4501813B2 (ja) * 2005-08-19 2010-07-14 セイコーエプソン株式会社 光学素子の製造方法、投射型表示装置
JP2008177191A (ja) * 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP2009252983A (ja) * 2008-04-04 2009-10-29 Canon Inc 撮像センサー、及び撮像センサーの製造方法
JP5428509B2 (ja) * 2009-05-11 2014-02-26 ソニー株式会社 ２次元固体撮像装置、及び、２次元固体撮像装置における偏光光データ処理方法
JP2010049280A (ja) * 2009-11-25 2010-03-04 Seiko Epson Corp 偏光素子の製造方法
JP5682437B2 (ja) * 2010-09-07 2015-03-11 ソニー株式会社 固体撮像素子、固体撮像装置、撮像機器、及び、偏光素子の製造方法
JP5760388B2 (ja) * 2010-11-01 2015-08-12 セイコーエプソン株式会社 偏光素子とその製造方法、プロジェクター、液晶装置、電子機器
JP5682312B2 (ja) 2011-01-05 2015-03-11 ソニー株式会社 固体撮像装置の製造方法
JP2012169530A (ja) * 2011-02-16 2012-09-06 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2012238632A (ja) * 2011-05-10 2012-12-06 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
JP2014164263A (ja) * 2013-02-27 2014-09-08 Ricoh Opt Ind Co Ltd サブ波長構造をもつ光学素子およびその製造方法
JP2015106149A (ja) * 2013-12-03 2015-06-08 株式会社リコー 光学フィルタ及び該光学フィルタを備える撮像装置、並びに光学フィルタの製造方法
JP2015170732A (ja) * 2014-03-07 2015-09-28 株式会社東芝 レーザ加熱処理方法、及び、固体撮像装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11284046B2 (en) 2018-05-14 2022-03-22 Sony Semiconductor Solutions Corporation Imaging element and imaging device for controlling polarization of incident light

Also Published As

Publication number Publication date
JP2017076684A (ja) 2017-04-20
WO2017064845A1 (en) 2017-04-20
CN108028260B (zh) 2022-11-18
US20180277584A1 (en) 2018-09-27
CN108028260A (zh) 2018-05-11
US10861893B2 (en) 2020-12-08

Similar Documents

Publication Publication Date Title
JP6903396B2 (ja) 撮像素子及び撮像装置
KR102633229B1 (ko) 촬상소자 및 촬상소자의 제조 방법, 촬상장치, 및 촬상장치의 제조 방법
JP6833597B2 (ja) 固体撮像装置
TWI451565B (zh) 二維固態影像捕捉裝置及其偏振光資料處理方法
EP2615640B1 (en) Solid-state imaging device and imaging apparatus
US12408458B2 (en) Photoelectric conversion element and light receiving device
WO2020100431A1 (ja) 受光装置
WO2022091622A1 (ja) 受光装置

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20160720

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20160721

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20160721

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181005

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181005

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190919

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200512

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200703

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201013

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201204

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20210301

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210525

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210623

R150 Certificate of patent or registration of utility model

Ref document number: 6903396

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150