JP6902053B2 - 照射硬化レンズを備える処理チャンバ - Google Patents

照射硬化レンズを備える処理チャンバ Download PDF

Info

Publication number
JP6902053B2
JP6902053B2 JP2018560940A JP2018560940A JP6902053B2 JP 6902053 B2 JP6902053 B2 JP 6902053B2 JP 2018560940 A JP2018560940 A JP 2018560940A JP 2018560940 A JP2018560940 A JP 2018560940A JP 6902053 B2 JP6902053 B2 JP 6902053B2
Authority
JP
Japan
Prior art keywords
substrate
processing chamber
lens
lenses
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2018560940A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019518594A (ja
JP2019518594A5 (https=
Inventor
オルランド トレホ，
オルランド トレホ，
ランプラカッシュ サンカラクリッシュナン，
ランプラカッシュ サンカラクリッシュナン，
ツァ−ジン グン，
ツァ−ジン グン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2019518594A publication Critical patent/JP2019518594A/ja
Publication of JP2019518594A5 publication Critical patent/JP2019518594A5/ja
Application granted granted Critical
Publication of JP6902053B2 publication Critical patent/JP6902053B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G02B3/08—Simple or compound lenses with non-spherical faces with discontinuous faces, e.g. Fresnel lens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Surface Treatment Of Optical Elements (AREA)
JP2018560940A 2016-05-26 2017-05-26 照射硬化レンズを備える処理チャンバ Expired - Fee Related JP6902053B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/165,930 US10541159B2 (en) 2016-05-26 2016-05-26 Processing chamber with irradiance curing lens
US15/165,930 2016-05-26
PCT/US2017/034622 WO2017205714A1 (en) 2016-05-26 2017-05-26 Processing chamber with irradiance curing lens

Publications (3)

Publication Number Publication Date
JP2019518594A JP2019518594A (ja) 2019-07-04
JP2019518594A5 JP2019518594A5 (https=) 2020-07-09
JP6902053B2 true JP6902053B2 (ja) 2021-07-14

Family

ID=60411566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018560940A Expired - Fee Related JP6902053B2 (ja) 2016-05-26 2017-05-26 照射硬化レンズを備える処理チャンバ

Country Status (5)

Country Link
US (1) US10541159B2 (https=)
JP (1) JP6902053B2 (https=)
KR (1) KR102171712B1 (https=)
CN (1) CN109155234B (https=)
WO (1) WO2017205714A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117242560A (zh) * 2021-04-29 2023-12-15 应用材料公司 用于快速热处理腔室的窗

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755654A (en) * 1987-03-26 1988-07-05 Crowley John L Semiconductor wafer heating chamber
JPH03277774A (ja) * 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
JP3115822B2 (ja) * 1996-06-04 2000-12-11 松下電子工業株式会社 紫外線照射装置およびその照射方法
US6809012B2 (en) * 2001-01-18 2004-10-26 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor using laser annealing
US6547422B2 (en) * 2001-08-08 2003-04-15 Prokia Technology Co., Ltd. Illuminating module for a display apparatus
US6879777B2 (en) 2002-10-03 2005-04-12 Asm America, Inc. Localized heating of substrates using optics
US6862404B1 (en) * 2003-09-08 2005-03-01 Wafermasters Focused photon energy heating chamber
US8980769B1 (en) * 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8137465B1 (en) * 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
JP2007229682A (ja) 2006-03-03 2007-09-13 Harison Toshiba Lighting Corp 紫外線照射装置
US7909595B2 (en) * 2006-03-17 2011-03-22 Applied Materials, Inc. Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections
JP2007317991A (ja) * 2006-05-29 2007-12-06 Advanced Lcd Technologies Development Center Co Ltd 半導体装置の製造方法並びに薄膜トランジスタ
US7851232B2 (en) * 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
JP5282669B2 (ja) * 2009-06-12 2013-09-04 ウシオ電機株式会社 光照射装置
US8309421B2 (en) * 2010-11-24 2012-11-13 Applied Materials, Inc. Dual-bulb lamphead control methodology
KR20160086993A (ko) 2011-10-14 2016-07-20 크루서블 인텔렉츄얼 프라퍼티 엘엘씨. 일렬식 온도 제어 용융을 위한 봉쇄 게이트
KR20130112549A (ko) 2012-04-04 2013-10-14 박흥균 자외선 경화장치용 광학모듈
US9905444B2 (en) 2012-04-25 2018-02-27 Applied Materials, Inc. Optics for controlling light transmitted through a conical quartz dome
US9287154B2 (en) 2012-06-01 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. UV curing system for semiconductors
JP6197641B2 (ja) * 2013-12-26 2017-09-20 ウシオ電機株式会社 真空紫外光照射処理装置

Also Published As

Publication number Publication date
US20170345649A1 (en) 2017-11-30
JP2019518594A (ja) 2019-07-04
CN109155234A (zh) 2019-01-04
CN109155234B (zh) 2023-08-22
KR20180136577A (ko) 2018-12-24
KR102171712B1 (ko) 2020-10-29
WO2017205714A1 (en) 2017-11-30
US10541159B2 (en) 2020-01-21

Similar Documents

Publication Publication Date Title
KR102232748B1 (ko) 기판을 가공하기 위한 플라즈마 처리 장치 및 플라즈마 처리에 의해 처리된 기판의 면내 균일성을 제어하는 방법
US8455849B2 (en) Method and apparatus for modulating wafer treatment profile in UV chamber
KR101589346B1 (ko) 성막 방법, 성막 장치 및 기억 매체
US10221483B2 (en) Showerhead design
TWI851651B (zh) 基板支撐組件、處理腔室、及處理基板的方法
EP3488464B1 (en) Heating modulators to improve epi uniformity tuning
US20170226639A1 (en) Substrate Processing Apparatus, Substrate Processing Method and Storage Medium
CN109003914B (zh) 包括上部圆顶的半导体工艺室
US20110189438A1 (en) Template, method of manufacturing template, and pattern forming method
JP6902053B2 (ja) 照射硬化レンズを備える処理チャンバ
JP6820866B2 (ja) リフレクタを有する処理チャンバ
JP4968011B2 (ja) 半導体装置
KR102727055B1 (ko) 극자외선 리소그래피용 펠리클 및 그 제조방법
JP2015146412A (ja) インプリント用テンプレート及びその製造方法
CN113727827A (zh) 在表面具备微细凹凸结构的塑料元件的制造方法
TW202027129A (zh) 基板處理裝置、基板處理方法及記憶媒體
KR102727620B1 (ko) 기판지지부
JPWO2020131843A5 (https=)
WO2025052582A1 (ja) ウエハ処理装置
KR100844981B1 (ko) 위상반전 마스크 및 이의 형성방법
CN118891706A (zh) 通过图案化uv固化的晶片弯曲补偿
JP7029640B2 (ja) 板材の加工方法および素子チップの製造方法
KR20210021440A (ko) 마이크로 렌즈의 제조 방법 및 플라스마 처리 장치
JP2007187732A (ja) 回折光学素子とその製造方法
KR20220072313A (ko) 그라운드 링

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200526

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200526

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20200526

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20200609

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200826

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200901

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20201201

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20210201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210301

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210420

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20210519

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210618

R150 Certificate of patent or registration of utility model

Ref document number: 6902053

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees