JP6891758B2 - 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 - Google Patents

炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 Download PDF

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JP6891758B2
JP6891758B2 JP2017200837A JP2017200837A JP6891758B2 JP 6891758 B2 JP6891758 B2 JP 6891758B2 JP 2017200837 A JP2017200837 A JP 2017200837A JP 2017200837 A JP2017200837 A JP 2017200837A JP 6891758 B2 JP6891758 B2 JP 6891758B2
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silicon carbide
carbide epitaxial
basal plane
dislocation
epitaxial substrate
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JP2018070440A (ja
JP2018070440A5 (enExample
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勉 堀
勉 堀
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
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    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2017200837A 2016-10-04 2017-10-17 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 Active JP6891758B2 (ja)

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JP2016196636 2016-10-04
JP2016196636 2016-10-04
JP2017544970A JP6233555B1 (ja) 2016-10-04 2017-06-05 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法

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JP7310805B2 (ja) 2018-05-09 2023-07-19 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6585799B1 (ja) 2018-10-15 2019-10-02 昭和電工株式会社 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法
JP2023508691A (ja) 2019-12-27 2023-03-03 ウルフスピード インコーポレイテッド 大口径炭化ケイ素ウェハ
CN116034485B (zh) * 2020-08-28 2025-10-03 华为技术有限公司 一种衬底及功率放大器件
US12125701B2 (en) * 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
CN113388888B (zh) * 2021-06-22 2022-07-12 山东天岳先进科技股份有限公司 一种碳化硅晶体、其使用的籽晶及籽晶的制备方法
WO2024080071A1 (ja) * 2022-10-11 2024-04-18 住友電気工業株式会社 炭化珪素結晶基板、エピタキシャル基板および半導体装置の製造方法

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US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
TWI408262B (zh) * 2007-09-12 2013-09-11 Showa Denko Kk 磊晶ＳｉＣ單晶基板及磊晶ＳｉＣ單晶基板之製造方法
US20110008681A1 (en) 2007-09-12 2011-01-13 Meiten Koh Electrolytic solution
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
CA2791416C (en) 2010-03-01 2018-05-15 The University Of British Columbia Derivatized hyperbranched polyglycerols
JP6025306B2 (ja) * 2011-05-16 2016-11-16 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
JP5958949B2 (ja) * 2011-05-26 2016-08-02 一般財団法人電力中央研究所 炭化珪素基板、炭化珪素ウェハ、炭化珪素ウェハの製造方法及び炭化珪素半導体素子
US8940614B2 (en) * 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP6122704B2 (ja) 2013-06-13 2017-04-26 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
CN106715767A (zh) * 2014-10-01 2017-05-24 住友电气工业株式会社 碳化硅外延基板
JP2016166112A (ja) * 2015-03-10 2016-09-15 株式会社東芝 半導体基板及び半導体装置
KR102106722B1 (ko) * 2015-07-29 2020-05-04 쇼와 덴코 가부시키가이샤 에피택셜 탄화규소 단결정 웨이퍼의 제조 방법
US20170321345A1 (en) * 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof

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US10714572B2 (en) 2020-07-14
US20190245044A1 (en) 2019-08-08
JP2018070440A (ja) 2018-05-10
CN109791879A (zh) 2019-05-21
CN109791879B (zh) 2023-07-25
WO2018066173A1 (ja) 2018-04-12
DE112017005034T5 (de) 2019-06-27

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