JP6889103B2 - 投影リソグラフィのための照明光学ユニットのためのファセットミラー - Google Patents
投影リソグラフィのための照明光学ユニットのためのファセットミラー Download PDFInfo
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- JP6889103B2 JP6889103B2 JP2017510867A JP2017510867A JP6889103B2 JP 6889103 B2 JP6889103 B2 JP 6889103B2 JP 2017510867 A JP2017510867 A JP 2017510867A JP 2017510867 A JP2017510867 A JP 2017510867A JP 6889103 B2 JP6889103 B2 JP 6889103B2
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- 238000005286 illumination Methods 0.000 title claims description 93
- 238000001459 lithography Methods 0.000 title claims description 7
- 230000003287 optical effect Effects 0.000 claims description 32
- 230000000007 visual effect Effects 0.000 claims description 23
- 230000004048 modification Effects 0.000 claims description 11
- 238000012986 modification Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 description 37
- 238000006073 displacement reaction Methods 0.000 description 19
- 210000001747 pupil Anatomy 0.000 description 15
- 230000005855 radiation Effects 0.000 description 11
- 230000006870 function Effects 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/067—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators using surface reflection, e.g. grazing incidence mirrors, gratings
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
- Mounting And Adjusting Of Optical Elements (AREA)
- Microscoopes, Condenser (AREA)
Description
12 伝達ファセット
17 使用ファセット配置
18 変位方向
19 変位アクチュエータ
Claims (11)
- 投影リソグラフィのための照明光学ユニットのためのファセットミラー(11;14;34)であって、
照明光部分ビーム(9i)を各場合に反射する複数の使用ファセット(12)を含み、 変更ファセットを前記使用ファセット(12;12,13)のうちの正確に1つのものの使用の場所に交替的に位置決めすることができるファセット担体(22)上に一緒に配置された複数の変更ファセット(12,12’;12i,12i’;13)を有する少なくとも1つの変更サブユニット(16;20;28)を含み、
前記変更サブユニット(16;20;28)を通じて変更可能な第1の使用ファセット(12)に対し、
ある方向に沿って、前記第1の使用ファセット(12)と、前記変更サブユニットを通じて変更可能ではない使用ファセットとの間に、距離が存在し、
前記方向に沿って、前記第1の使用ファセット(12)に隣接する使用ファセットが、前記距離の少なくとも5倍である幅を有する、
ことを特徴とするファセットミラー(11;14;34)。 - 前記変更サブユニット(16)は、行方向(x)に少なくとも1つのファセット行を含み、前記変更ファセット(121,121’)は、該ファセット行に沿って配置され、ファセットミラー(11;14;34)の前記使用ファセット(12)は、該ファセット行の該行方向(x)に対して横断方向(y)に配置される、
ことを特徴とする請求項1に記載のファセットミラー。 - 前記変更サブユニット(20;28)は、ピボット回転可能様式に具現化され、前記変更ファセット(12,12’)は、ピボット軸(21)の周りで周方向に配置されることを特徴とする請求項1に記載のファセットミラー。
- 前記変更サブユニットは、隣接変更サブユニット(20;28)をそれを通じて互いに対して置くことができる回転対称壁セクション(23,24)を有するファセット担体(22)を有することを特徴とする請求項3に記載のファセットミラー。
- 前記ピボット回転可能変更サブユニット(28)は、2次元アレイに配置されることを特徴とする請求項3及び請求項4のいずれか1項に記載のファセットミラー。
- 投影リソグラフィのための照明光学ユニットであって、
請求項1から請求項5のいずれか1項に記載のファセットミラー(11;14;34)、
を含むことを特徴とする照明光学ユニット。 - 視野ファセットミラー(34)と、
瞳ファセットミラー(35)と、
を含むことを特徴とする請求項6に記載の照明光学ユニット。 - 投影リソグラフィのための光学系であって、
照明される物体を配置することができる物体視野(3)を照明するための請求項6又は請求項7に記載の照明光学ユニットを含み、
前記物体視野(3)を像視野(7)内に結像するための投影光学ユニット(6)を含む、
ことを特徴とする光学系。 - 請求項6又は請求項7のいずれか1項に記載の照明光学ユニットを含み、
EUV光源(2)を含む、
ことを特徴とする照明系。 - 請求項8に記載の光学系と、
EUV光源(2)と、
を含むことを特徴とする投影露光装置。 - 構造化構成要素を生成する方法であって、
請求項10に記載の投影露光装置(4)を与える段階と、
レチクル(5)を与える段階と、
物体視野(3)に配置された前記レチクル(5)の面をウェーハ(8)の感光層の上に投影する段階と、
を含むことを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014216801.5 | 2014-08-25 | ||
DE102014216801.5A DE102014216801A1 (de) | 2014-08-25 | 2014-08-25 | Facettenspiegel für eine Beleuchtungsoptik für die Projektionslithographie |
PCT/EP2015/069020 WO2016030243A1 (en) | 2014-08-25 | 2015-08-19 | Facet mirror for an illumination optical unit for projection lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017526968A JP2017526968A (ja) | 2017-09-14 |
JP6889103B2 true JP6889103B2 (ja) | 2021-06-18 |
Family
ID=54014788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017510867A Active JP6889103B2 (ja) | 2014-08-25 | 2015-08-19 | 投影リソグラフィのための照明光学ユニットのためのファセットミラー |
Country Status (6)
Country | Link |
---|---|
US (1) | US10216091B2 (ja) |
JP (1) | JP6889103B2 (ja) |
CN (1) | CN106605175B (ja) |
DE (1) | DE102014216801A1 (ja) |
TW (1) | TWI676060B (ja) |
WO (1) | WO2016030243A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017210206A1 (de) | 2017-06-19 | 2018-04-26 | Carl Zeiss Smt Gmbh | Baugruppe, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage |
DE102017210190A1 (de) | 2017-06-19 | 2018-03-15 | Carl Zeiss Smt Gmbh | Optisches Element |
DE102018201457A1 (de) * | 2018-01-31 | 2019-08-01 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie |
DE102018207410A1 (de) | 2018-05-14 | 2019-05-23 | Carl Zeiss Smt Gmbh | Facettenspiegel für eine Beleuchtungsoptik für die Projektionslithographie |
DE102019214269A1 (de) * | 2019-09-19 | 2021-03-25 | Carl Zeiss Smt Gmbh | Facettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10053587A1 (de) | 2000-10-27 | 2002-05-02 | Zeiss Carl | Beleuchtungssystem mit variabler Einstellung der Ausleuchtung |
DE10317667A1 (de) | 2003-04-17 | 2004-11-18 | Carl Zeiss Smt Ag | Optisches Element für ein Beleuchtungssystem |
DE102006014380A1 (de) * | 2006-03-27 | 2007-10-11 | Carl Zeiss Smt Ag | Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille |
DE102006056035A1 (de) | 2006-11-28 | 2008-05-29 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Projektions-Mikrolithographie, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil |
DE102007045396A1 (de) | 2007-09-21 | 2009-04-23 | Carl Zeiss Smt Ag | Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle |
DE102008001511A1 (de) * | 2008-04-30 | 2009-11-05 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
DE102008049586A1 (de) * | 2008-09-30 | 2010-04-08 | Carl Zeiss Smt Ag | Feldfacettenspiegel zum Einsatz in einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die EUV-Mikrolithographie |
JP2011077142A (ja) * | 2009-09-29 | 2011-04-14 | Nikon Corp | 照明光学装置、露光装置及びデバイス製造方法 |
DE102009054888A1 (de) * | 2009-12-17 | 2011-06-22 | Carl Zeiss SMT GmbH, 73447 | Optisches Element mit einer Mehrzahl von refletiven Facettenelementen |
JP5644416B2 (ja) * | 2010-11-24 | 2014-12-24 | 株式会社ニコン | 光学ユニット、光学系、露光装置、及びデバイスの製造方法 |
DE102011083888A1 (de) * | 2011-09-30 | 2013-04-04 | Carl Zeiss Smt Gmbh | Abbildende katoptrische EUV-Projektionsoptik |
DE102012207048A1 (de) * | 2012-04-27 | 2013-04-18 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung einer optischen Baugruppe |
DE102012223754A1 (de) * | 2012-12-19 | 2014-05-15 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur automatisierten Montage von Facettenspiegeln und entsprechend hergestellte Facettenspiegel |
DE102013212363A1 (de) * | 2013-06-27 | 2014-07-31 | Carl Zeiss Smt Gmbh | Facettenspiegel, insbesondere für die EUV-Projektionslithografie |
-
2014
- 2014-08-25 DE DE102014216801.5A patent/DE102014216801A1/de not_active Ceased
-
2015
- 2015-08-19 JP JP2017510867A patent/JP6889103B2/ja active Active
- 2015-08-19 WO PCT/EP2015/069020 patent/WO2016030243A1/en active Application Filing
- 2015-08-19 CN CN201580045812.0A patent/CN106605175B/zh active Active
- 2015-08-24 TW TW104127529A patent/TWI676060B/zh active
-
2017
- 2017-02-17 US US15/436,140 patent/US10216091B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017526968A (ja) | 2017-09-14 |
DE102014216801A1 (de) | 2016-02-25 |
CN106605175A (zh) | 2017-04-26 |
CN106605175B (zh) | 2020-08-11 |
US10216091B2 (en) | 2019-02-26 |
TW201614305A (en) | 2016-04-16 |
WO2016030243A1 (en) | 2016-03-03 |
TWI676060B (zh) | 2019-11-01 |
US20170176865A1 (en) | 2017-06-22 |
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