JP6882115B2 - Ｄｄｒ ｓｄｒａｍインタフェイスのためのｄｒａｍ支援エラー訂正方法 - Google Patents

Ｄｄｒ ｓｄｒａｍインタフェイスのためのｄｒａｍ支援エラー訂正方法 Download PDF

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JP6882115B2
JP6882115B2 JP2017156564A JP2017156564A JP6882115B2 JP 6882115 B2 JP6882115 B2 JP 6882115B2 JP 2017156564 A JP2017156564 A JP 2017156564A JP 2017156564 A JP2017156564 A JP 2017156564A JP 6882115 B2 JP6882115 B2 JP 6882115B2
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error
dram
chip
memory
ecc
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JP2018028910A5 (enExample
JP2018028910A (ja
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ニゥ，ディ−ミン
チャン，ムゥ−ティェン
ゼング，ホング−ゾング
キム，ヒュン−ジューング
ソング，ウォン−ヒュング
チェ，ジャング−ソク
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0617—Improving the reliability of storage systems in relation to availability
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Databases & Information Systems (AREA)
  • Human Computer Interaction (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Detection And Correction Of Errors (AREA)
  • Retry When Errors Occur (AREA)
JP2017156564A 2016-08-15 2017-08-14 Ｄｄｒ ｓｄｒａｍインタフェイスのためのｄｒａｍ支援エラー訂正方法 Active JP6882115B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662375381P 2016-08-15 2016-08-15
US62/375,381 2016-08-15
US15/286,460 2016-10-05
US15/286,460 US10268541B2 (en) 2016-08-15 2016-10-05 DRAM assist error correction mechanism for DDR SDRAM interface

Publications (3)

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JP2018028910A JP2018028910A (ja) 2018-02-22
JP2018028910A5 JP2018028910A5 (enExample) 2020-09-03
JP6882115B2 true JP6882115B2 (ja) 2021-06-02

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US (5) US10268541B2 (enExample)
JP (1) JP6882115B2 (enExample)
KR (1) KR102191223B1 (enExample)
CN (1) CN107766172B (enExample)
TW (1) TWI710892B (enExample)

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US10268541B2 (en) 2019-04-23
US12242344B2 (en) 2025-03-04
TW201818245A (zh) 2018-05-16
US20180046541A1 (en) 2018-02-15
US20190179704A1 (en) 2019-06-13
KR102191223B1 (ko) 2020-12-16
US20190179705A1 (en) 2019-06-13
CN107766172A (zh) 2018-03-06
US11010242B2 (en) 2021-05-18
CN107766172B (zh) 2022-06-28
US11625296B2 (en) 2023-04-11
JP2018028910A (ja) 2018-02-22
US10977118B2 (en) 2021-04-13
US20210294697A1 (en) 2021-09-23
US20230229555A1 (en) 2023-07-20

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