JP6877133B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

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Publication number
JP6877133B2
JP6877133B2 JP2016241887A JP2016241887A JP6877133B2 JP 6877133 B2 JP6877133 B2 JP 6877133B2 JP 2016241887 A JP2016241887 A JP 2016241887A JP 2016241887 A JP2016241887 A JP 2016241887A JP 6877133 B2 JP6877133 B2 JP 6877133B2
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Japan
Prior art keywords
wafer
sample table
plasma
plasma processing
heat transfer
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JP2016241887A
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English (en)
Japanese (ja)
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JP2017183700A (ja
JP2017183700A5 (enrdf_load_stackoverflow
Inventor
匠 丹藤
匠 丹藤
横川　賢悦
賢悦 横川
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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Publication date
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Priority to KR1020170037372A priority Critical patent/KR101995812B1/ko
Priority to TW106110164A priority patent/TWI666679B/zh
Priority to US15/469,684 priority patent/US20170278730A1/en
Publication of JP2017183700A publication Critical patent/JP2017183700A/ja
Publication of JP2017183700A5 publication Critical patent/JP2017183700A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2016241887A 2016-03-28 2016-12-14 プラズマ処理装置およびプラズマ処理方法 Active JP6877133B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020170037372A KR101995812B1 (ko) 2016-03-28 2017-03-24 플라스마 처리 장치 및 플라스마 처리 방법
TW106110164A TWI666679B (zh) 2016-03-28 2017-03-27 電漿處理裝置及電漿處理方法
US15/469,684 US20170278730A1 (en) 2016-03-28 2017-03-27 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016062978 2016-03-28
JP2016062978 2016-03-28

Publications (3)

Publication Number Publication Date
JP2017183700A JP2017183700A (ja) 2017-10-05
JP2017183700A5 JP2017183700A5 (enrdf_load_stackoverflow) 2020-01-30
JP6877133B2 true JP6877133B2 (ja) 2021-05-26

Family

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Family Applications (1)

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JP2016241887A Active JP6877133B2 (ja) 2016-03-28 2016-12-14 プラズマ処理装置およびプラズマ処理方法

Country Status (3)

Country Link
JP (1) JP6877133B2 (enrdf_load_stackoverflow)
KR (1) KR101995812B1 (enrdf_load_stackoverflow)
TW (1) TWI666679B (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7073098B2 (ja) 2017-12-27 2022-05-23 株式会社日立ハイテク ウエハ処理方法およびウエハ処理装置
JP7083080B2 (ja) * 2018-01-11 2022-06-10 株式会社日立ハイテク プラズマ処理装置
JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
JP7214021B2 (ja) * 2018-03-29 2023-01-27 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
JP7170449B2 (ja) * 2018-07-30 2022-11-14 東京エレクトロン株式会社 載置台機構、処理装置及び載置台機構の動作方法
JP7236845B2 (ja) * 2018-11-15 2023-03-10 株式会社Kelk 温調装置
KR102211817B1 (ko) * 2018-12-14 2021-02-05 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7134863B2 (ja) * 2018-12-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN111383885B (zh) * 2018-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 一种能提高控温精度的基片安装台及等离子体处理设备
US10784089B2 (en) * 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
WO2020161919A1 (ja) * 2019-02-08 2020-08-13 株式会社日立ハイテクノロジーズ プラズマ処理装置
TWI701751B (zh) 2019-03-12 2020-08-11 力晶積成電子製造股份有限公司 晶圓夾盤裝置、晶圓形變量的量測方法及半導體製造方法
JP7341043B2 (ja) * 2019-12-06 2023-09-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN112951739B (zh) * 2019-12-10 2024-12-06 圆益Ips股份有限公司 基板支撑架及基板处理装置
JP7512037B2 (ja) * 2019-12-27 2024-07-08 東京エレクトロン株式会社 載置台、基板処理装置及び伝熱ガス供給方法
US20230141653A1 (en) * 2021-06-14 2023-05-11 Lam Research Corporation Frontside and backside pressure monitoring for substrate movement prevention

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264626A (ja) 1994-04-28 1996-10-11 Hitachi Ltd 試料保持方法及び試料表面の流体処理方法並びにそれらの装置
JPH09143674A (ja) * 1995-11-24 1997-06-03 Tokyo Electron Ltd 成膜装置及びその使用方法
GB0108002D0 (en) * 2001-03-30 2001-05-23 Trikon Holdings Ltd A method of etching a substrate
JP4815298B2 (ja) * 2006-07-31 2011-11-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US8057602B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
JP4929150B2 (ja) * 2007-12-27 2012-05-09 新光電気工業株式会社 静電チャック及び基板温調固定装置
JP5745812B2 (ja) 2010-10-27 2015-07-08 東京エレクトロン株式会社 プラズマ処理装置
US8941969B2 (en) * 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
JP6159172B2 (ja) * 2013-06-26 2017-07-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
CN104377155B (zh) * 2013-08-14 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘以及等离子体加工设备
GB201402126D0 (en) * 2014-02-07 2014-03-26 Spts Technologies Ltd Method of processing a substrate
KR20160015510A (ko) * 2014-07-30 2016-02-15 삼성전자주식회사 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법

Also Published As

Publication number Publication date
TWI666679B (zh) 2019-07-21
TW201801130A (zh) 2018-01-01
JP2017183700A (ja) 2017-10-05
KR20170113227A (ko) 2017-10-12
KR101995812B1 (ko) 2019-07-03

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