JP6870926B2 - 表示装置、表示モジュール、および電子機器 - Google Patents

表示装置、表示モジュール、および電子機器 Download PDF

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Publication number
JP6870926B2
JP6870926B2 JP2016123315A JP2016123315A JP6870926B2 JP 6870926 B2 JP6870926 B2 JP 6870926B2 JP 2016123315 A JP2016123315 A JP 2016123315A JP 2016123315 A JP2016123315 A JP 2016123315A JP 6870926 B2 JP6870926 B2 JP 6870926B2
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Japan
Prior art keywords
layer
transistor
electrode
insulating layer
oxide semiconductor
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JP2016123315A
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English (en)
Japanese (ja)
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JP2017227746A (ja
JP2017227746A5 (enExample
Inventor
三宅　博之
博之 三宅
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2016123315A priority Critical patent/JP6870926B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JP2017227746A publication Critical patent/JP2017227746A/ja
Publication of JP2017227746A5 publication Critical patent/JP2017227746A5/ja
Priority to JP2021068808A priority patent/JP7046251B2/ja
Application granted granted Critical
Publication of JP6870926B2 publication Critical patent/JP6870926B2/ja
Priority to JP2022045104A priority patent/JP7200418B2/ja
Priority to JP2022203919A priority patent/JP7397957B2/ja
Priority to JP2023203861A priority patent/JP7562818B2/ja
Priority to JP2024166153A priority patent/JP7661595B2/ja
Priority to JP2025061425A priority patent/JP7842277B2/ja
Priority to JP2026051658A priority patent/JP2026113526A/ja
Priority to JP2026060840A priority patent/JP7860360B1/ja
Expired - Fee Related legal-status Critical Current
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2016123315A 2016-06-22 2016-06-22 表示装置、表示モジュール、および電子機器 Expired - Fee Related JP6870926B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2016123315A JP6870926B2 (ja) 2016-06-22 2016-06-22 表示装置、表示モジュール、および電子機器
JP2021068808A JP7046251B2 (ja) 2016-06-22 2021-04-15 表示装置
JP2022045104A JP7200418B2 (ja) 2016-06-22 2022-03-22 半導体装置
JP2022203919A JP7397957B2 (ja) 2016-06-22 2022-12-21 半導体装置
JP2023203861A JP7562818B2 (ja) 2016-06-22 2023-12-01 半導体装置
JP2024166153A JP7661595B2 (ja) 2016-06-22 2024-09-25 半導体装置
JP2025061425A JP7842277B2 (ja) 2016-06-22 2025-04-02 半導体装置
JP2026051658A JP2026113526A (ja) 2016-06-22 2026-03-26 半導体装置
JP2026060840A JP7860360B1 (ja) 2016-06-22 2026-04-02 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016123315A JP6870926B2 (ja) 2016-06-22 2016-06-22 表示装置、表示モジュール、および電子機器

Related Child Applications (1)

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JP2021068808A Division JP7046251B2 (ja) 2016-06-22 2021-04-15 表示装置

Publications (3)

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JP2017227746A JP2017227746A (ja) 2017-12-28
JP2017227746A5 JP2017227746A5 (enExample) 2019-07-25
JP6870926B2 true JP6870926B2 (ja) 2021-05-12

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Family Applications (9)

Application Number Title Priority Date Filing Date
JP2016123315A Expired - Fee Related JP6870926B2 (ja) 2016-06-22 2016-06-22 表示装置、表示モジュール、および電子機器
JP2021068808A Active JP7046251B2 (ja) 2016-06-22 2021-04-15 表示装置
JP2022045104A Active JP7200418B2 (ja) 2016-06-22 2022-03-22 半導体装置
JP2022203919A Active JP7397957B2 (ja) 2016-06-22 2022-12-21 半導体装置
JP2023203861A Active JP7562818B2 (ja) 2016-06-22 2023-12-01 半導体装置
JP2024166153A Active JP7661595B2 (ja) 2016-06-22 2024-09-25 半導体装置
JP2025061425A Active JP7842277B2 (ja) 2016-06-22 2025-04-02 半導体装置
JP2026051658A Pending JP2026113526A (ja) 2016-06-22 2026-03-26 半導体装置
JP2026060840A Active JP7860360B1 (ja) 2016-06-22 2026-04-02 半導体装置

Family Applications After (8)

Application Number Title Priority Date Filing Date
JP2021068808A Active JP7046251B2 (ja) 2016-06-22 2021-04-15 表示装置
JP2022045104A Active JP7200418B2 (ja) 2016-06-22 2022-03-22 半導体装置
JP2022203919A Active JP7397957B2 (ja) 2016-06-22 2022-12-21 半導体装置
JP2023203861A Active JP7562818B2 (ja) 2016-06-22 2023-12-01 半導体装置
JP2024166153A Active JP7661595B2 (ja) 2016-06-22 2024-09-25 半導体装置
JP2025061425A Active JP7842277B2 (ja) 2016-06-22 2025-04-02 半導体装置
JP2026051658A Pending JP2026113526A (ja) 2016-06-22 2026-03-26 半導体装置
JP2026060840A Active JP7860360B1 (ja) 2016-06-22 2026-04-02 半導体装置

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JP (9) JP6870926B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116887634A (zh) * 2018-12-06 2023-10-13 株式会社半导体能源研究所 显示装置及显示装置的制造方法
WO2020245692A1 (ja) * 2019-06-07 2020-12-10 株式会社半導体エネルギー研究所 半導体装置
JP7636159B2 (ja) * 2019-12-27 2025-02-26 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 薄膜デバイス
CN111987132A (zh) * 2020-09-02 2020-11-24 山东傲晟智能科技有限公司 一种显示装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2372620A (en) * 2001-02-27 2002-08-28 Sharp Kk Active Matrix Device
JP3898012B2 (ja) * 2001-09-06 2007-03-28 シャープ株式会社 表示装置
US20060072047A1 (en) * 2002-12-06 2006-04-06 Kanetaka Sekiguchi Liquid crystal display
JP4554180B2 (ja) * 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
KR100627267B1 (ko) * 2004-05-20 2006-09-25 삼성에스디아이 주식회사 발광 표시 장치
JP4586573B2 (ja) * 2005-02-28 2010-11-24 エプソンイメージングデバイス株式会社 電気光学装置及びその製造方法、薄膜トランジスタ、電子機器
US7709313B2 (en) * 2005-07-19 2010-05-04 International Business Machines Corporation High performance capacitors in planar back gates CMOS
JP2007286150A (ja) 2006-04-13 2007-11-01 Idemitsu Kosan Co Ltd 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法
JP2010019950A (ja) 2008-07-09 2010-01-28 Seiko Epson Corp 電気光学装置および電子機器
CN102422426B (zh) * 2009-05-01 2016-06-01 株式会社半导体能源研究所 半导体装置的制造方法
JP2014199899A (ja) * 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 半導体装置
US9246011B2 (en) * 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI607510B (zh) * 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9673267B2 (en) * 2013-03-26 2017-06-06 Lg Display Co., Ltd. Organic light emitting diode display device having a capacitor with stacked storage electrodes and method for manufacturing the same
TWI635613B (zh) * 2013-04-03 2018-09-11 半導體能源研究所股份有限公司 半導體裝置
US9754971B2 (en) * 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150054210A (ko) * 2013-11-11 2015-05-20 삼성디스플레이 주식회사 유기 발광 표시 장치
KR20150097856A (ko) * 2014-02-17 2015-08-27 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6330220B2 (ja) * 2014-03-27 2018-05-30 株式会社Ｊｏｌｅｄ 表示装置、電子機器および基板
WO2015189735A1 (en) * 2014-06-13 2015-12-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US9934723B2 (en) 2014-06-25 2018-04-03 Lg Display Co., Ltd. Thin film transistor substrate, display panel including the same, and method of manufacturing the same
KR101968666B1 (ko) 2014-09-01 2019-04-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR20250060940A (ko) * 2014-09-05 2025-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 드라이버 ic, 표시 장치, 및 전자 장치
KR102270081B1 (ko) 2014-09-16 2021-06-29 삼성디스플레이 주식회사 유기 발광 표시 장치

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Publication number Publication date
JP2022095690A (ja) 2022-06-28
JP2025096367A (ja) 2025-06-26
JP7397957B2 (ja) 2023-12-13
JP2024174021A (ja) 2024-12-13
JP7842277B2 (ja) 2026-04-07
JP7200418B2 (ja) 2023-01-06
JP2024037775A (ja) 2024-03-19
JP2023052001A (ja) 2023-04-11
JP2021144222A (ja) 2021-09-24
JP7661595B2 (ja) 2025-04-14
JP2026113526A (ja) 2026-07-07
JP7046251B2 (ja) 2022-04-01
JP7860360B1 (ja) 2026-05-15
JP2017227746A (ja) 2017-12-28
JP7562818B2 (ja) 2024-10-07
JP2026120598A (ja) 2026-07-22

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