JP6869717B2 - 撮像装置および撮像装置の製造方法、並びに、電子機器 - Google Patents

撮像装置および撮像装置の製造方法、並びに、電子機器 Download PDF

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JP6869717B2
JP6869717B2 JP2016256829A JP2016256829A JP6869717B2 JP 6869717 B2 JP6869717 B2 JP 6869717B2 JP 2016256829 A JP2016256829 A JP 2016256829A JP 2016256829 A JP2016256829 A JP 2016256829A JP 6869717 B2 JP6869717 B2 JP 6869717B2
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Japan
Prior art keywords
image sensor
state image
solid
circuit board
csp
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JP2016256829A
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English (en)
Japanese (ja)
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JP2018110302A5 (enExample
JP2018110302A (ja
Inventor
勝治 木村
勝治 木村
大一 関
大一 関
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2016256829A priority Critical patent/JP6869717B2/ja
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to EP17823236.9A priority patent/EP3563414B1/en
Priority to PCT/JP2017/045041 priority patent/WO2018123643A1/en
Priority to KR1020197018115A priority patent/KR20190097064A/ko
Priority to US16/471,929 priority patent/US20200098810A1/en
Priority to CN201780068936.XA priority patent/CN109952648B/zh
Publication of JP2018110302A publication Critical patent/JP2018110302A/ja
Publication of JP2018110302A5 publication Critical patent/JP2018110302A5/ja
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Publication of JP6869717B2 publication Critical patent/JP6869717B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Studio Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2016256829A 2016-12-28 2016-12-28 撮像装置および撮像装置の製造方法、並びに、電子機器 Active JP6869717B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2016256829A JP6869717B2 (ja) 2016-12-28 2016-12-28 撮像装置および撮像装置の製造方法、並びに、電子機器
PCT/JP2017/045041 WO2018123643A1 (en) 2016-12-28 2017-12-15 Camera module, method for producing camera module,and electronic apparatus
KR1020197018115A KR20190097064A (ko) 2016-12-28 2017-12-15 카메라 모듈, 카메라 모듈의 제조 방법 및 전자기기
US16/471,929 US20200098810A1 (en) 2016-12-28 2017-12-15 Camera module, method for producing camera module, and electronic apparatus
EP17823236.9A EP3563414B1 (en) 2016-12-28 2017-12-15 Camera module, method for producing camera module,and electronic apparatus
CN201780068936.XA CN109952648B (zh) 2016-12-28 2017-12-15 相机模块、相机模块的制造方法和电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016256829A JP6869717B2 (ja) 2016-12-28 2016-12-28 撮像装置および撮像装置の製造方法、並びに、電子機器

Publications (3)

Publication Number Publication Date
JP2018110302A JP2018110302A (ja) 2018-07-12
JP2018110302A5 JP2018110302A5 (enExample) 2020-01-30
JP6869717B2 true JP6869717B2 (ja) 2021-05-12

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JP2016256829A Active JP6869717B2 (ja) 2016-12-28 2016-12-28 撮像装置および撮像装置の製造方法、並びに、電子機器

Country Status (6)

Country Link
US (1) US20200098810A1 (enExample)
EP (1) EP3563414B1 (enExample)
JP (1) JP6869717B2 (enExample)
KR (1) KR20190097064A (enExample)
CN (1) CN109952648B (enExample)
WO (1) WO2018123643A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6976751B2 (ja) * 2017-07-06 2021-12-08 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像装置の製造方法、並びに、電子機器
JP2019066422A (ja) 2017-10-04 2019-04-25 ソニーセミコンダクタソリューションズ株式会社 検査装置、および検査方法、並びに、プログラム
JP2020068302A (ja) * 2018-10-24 2020-04-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置
WO2020184267A1 (ja) * 2019-03-08 2020-09-17 デクセリアルズ株式会社 接続構造体の製造方法、及び接続構造体、並びにフィルム構造体、及びフィルム構造体の製造方法
JP7334675B2 (ja) * 2020-05-25 2023-08-29 株式会社デンソー 車載カメラ及び車両制御システム

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3971087B2 (ja) * 2000-06-26 2007-09-05 株式会社リコー 固体撮像装置
JP2009003073A (ja) * 2007-06-20 2009-01-08 Hitachi Maxell Ltd カメラモジュール、台座マウント及び撮像装置
JP4932745B2 (ja) * 2008-01-10 2012-05-16 シャープ株式会社 固体撮像装置およびそれを備えた電子機器
US8179462B2 (en) * 2008-10-28 2012-05-15 Panasonic Corporation Imaging unit
JP2011238667A (ja) * 2010-05-06 2011-11-24 Shinko Electric Ind Co Ltd 固体撮像装置の製造方法および固体撮像装置
JP5595786B2 (ja) * 2010-05-11 2014-09-24 シャープ株式会社 カメラモジュールおよびそれを備えた電子機器
JP2012018993A (ja) * 2010-07-06 2012-01-26 Toshiba Corp カメラモジュールおよびその製造方法
JP5031876B2 (ja) * 2010-09-24 2012-09-26 シャープ株式会社 カメラモジュールおよび撮像装置
JP2012222546A (ja) * 2011-04-07 2012-11-12 Sony Corp 固体撮像装置及びその製造方法、並びに電子機器
CN202120913U (zh) * 2011-06-08 2012-01-18 旭丽电子(广州)有限公司 薄型化图像撷取模块
US9007520B2 (en) * 2012-08-10 2015-04-14 Nanchang O-Film Optoelectronics Technology Ltd Camera module with EMI shield
KR102055840B1 (ko) * 2014-02-20 2019-12-17 삼성전자 주식회사 이미지 센서 패키지
JP6254680B2 (ja) * 2014-04-04 2018-01-10 シャープ株式会社 レンズ素子および撮像装置
EP3205494B1 (en) 2014-10-06 2019-09-25 Toyo Seikan Group Holdings, Ltd. Coated metal plate and organic resin-coated coated metal plate
US9997554B2 (en) * 2014-12-24 2018-06-12 Stmicroelectronics Pte Ltd Chip scale package camera module with glass interposer having lateral conductive traces between a first and second glass layer and method for making the same
JP6479857B2 (ja) * 2015-01-23 2019-03-06 シャープ株式会社 カメラモジュールの製造方法

Also Published As

Publication number Publication date
WO2018123643A1 (en) 2018-07-05
CN109952648B (zh) 2023-07-14
CN109952648A (zh) 2019-06-28
EP3563414A1 (en) 2019-11-06
JP2018110302A (ja) 2018-07-12
KR20190097064A (ko) 2019-08-20
US20200098810A1 (en) 2020-03-26
EP3563414B1 (en) 2021-11-24

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