JP6868619B2 - インプリント用インク組成物、インプリント方法、光学エレメント、照明装置、光センサ及び光起電力装置 - Google Patents
インプリント用インク組成物、インプリント方法、光学エレメント、照明装置、光センサ及び光起電力装置 Download PDFInfo
- Publication number
- JP6868619B2 JP6868619B2 JP2018520097A JP2018520097A JP6868619B2 JP 6868619 B2 JP6868619 B2 JP 6868619B2 JP 2018520097 A JP2018520097 A JP 2018520097A JP 2018520097 A JP2018520097 A JP 2018520097A JP 6868619 B2 JP6868619 B2 JP 6868619B2
- Authority
- JP
- Japan
- Prior art keywords
- ink composition
- imprint
- layer
- total weight
- optical element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims description 208
- 230000003287 optical effect Effects 0.000 title claims description 62
- 238000000034 method Methods 0.000 title claims description 42
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 66
- 239000000463 material Substances 0.000 claims description 61
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 60
- 238000006116 polymerization reaction Methods 0.000 claims description 51
- 229920000642 polymer Polymers 0.000 claims description 49
- 239000002245 particle Substances 0.000 claims description 44
- 239000002904 solvent Substances 0.000 claims description 44
- 239000003112 inhibitor Substances 0.000 claims description 35
- 238000009826 distribution Methods 0.000 claims description 32
- 239000002243 precursor Substances 0.000 claims description 31
- -1 polysiloxane Polymers 0.000 claims description 30
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 27
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 21
- 229920001296 polysiloxane Polymers 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 12
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 238000001228 spectrum Methods 0.000 claims description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 239000013013 elastic material Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 229910002367 SrTiO Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 101100240517 Caenorhabditis elegans nhr-11 gene Proteins 0.000 claims description 3
- 238000000149 argon plasma sintering Methods 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 102000004882 Lipase Human genes 0.000 claims 1
- 108090001060 Lipase Proteins 0.000 claims 1
- 239000004367 Lipase Substances 0.000 claims 1
- 235000019421 lipase Nutrition 0.000 claims 1
- 239000000976 ink Substances 0.000 description 174
- 239000002105 nanoparticle Substances 0.000 description 92
- 239000000758 substrate Substances 0.000 description 32
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 22
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 22
- 229960004063 propylene glycol Drugs 0.000 description 22
- 235000013772 propylene glycol Nutrition 0.000 description 22
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 19
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 19
- 235000011114 ammonium hydroxide Nutrition 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 18
- 239000006185 dispersion Substances 0.000 description 15
- 238000001878 scanning electron micrograph Methods 0.000 description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 12
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 10
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000006068 polycondensation reaction Methods 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 6
- 239000006184 cosolvent Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 5
- 230000000670 limiting effect Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- IHYBZJJHCMSCOF-UHFFFAOYSA-N 1-propoxyethanol Chemical compound CCCOC(C)O IHYBZJJHCMSCOF-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 241001631125 Oligoma Species 0.000 description 4
- 235000011054 acetic acid Nutrition 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000006482 condensation reaction Methods 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000006260 foam Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000007704 wet chemistry method Methods 0.000 description 4
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 238000001879 gelation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- HGUBFVKLMFGDJZ-UHFFFAOYSA-N methanol;silicon Chemical compound [Si].OC HGUBFVKLMFGDJZ-UHFFFAOYSA-N 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000002587 enol group Chemical group 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000010702 perfluoropolyether Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229930194542 Keto Natural products 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000012703 sol-gel precursor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- RKLXSINPXIQKIB-UHFFFAOYSA-N trimethoxy(oct-7-enyl)silane Chemical compound CO[Si](OC)(OC)CCCCCCC=C RKLXSINPXIQKIB-UHFFFAOYSA-N 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/102—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D17/00—Pigment pastes, e.g. for mixing in paints
- C09D17/004—Pigment pastes, e.g. for mixing in paints containing an inorganic pigment
- C09D17/007—Metal oxide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D17/00—Pigment pastes, e.g. for mixing in paints
- C09D17/004—Pigment pastes, e.g. for mixing in paints containing an inorganic pigment
- C09D17/007—Metal oxide
- C09D17/008—Titanium dioxide
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Planar Illumination Modules (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
これらのうちの任意の式の少なくとも1つの重合禁止剤と;を有する。
実施例の評価
スピンの結果
硬化後の幾つかの実施例の膜形成品質が、目視で検査され、1〜6の目盛上で分類された。該目盛において、
1=亀裂が入った層
2=はじかれた(dewetted)層
3〜4=中程度の均一性の層
5〜6=高均一性の層
達成することができる。
Claims (25)
- インプリント用インク組成物であって、
溶媒と、
前記溶媒中に溶解及び/又は分散される重合可能な含有物であって、該重合可能な含有物の全重量の少なくとも80重量%を形成する遷移金属酸化物粒子を有すると共に当該インプリント用インク組成物の全重量に対して2〜25重量%を形成する含有物と、
当該インプリント用インク組成物の全重量に対して0.1〜3.0重量%の範囲内で存在する下記の式1、当該インプリント用インク組成物の全重量に対して0.7〜7.0重量%の範囲内で存在する下記の式2、及び、当該インプリント用インク組成物の全重量に対して0.7〜7.0重量%の範囲内で存在する下記の式3のうちの任意の式の少なくとも1つの重合禁止剤と、
を有し、
インプリント用インク組成物。 - 前記遷移金属酸化物粒子は1〜10nmの範囲の下限値から20〜40nmの範囲の上限値までの粒子寸法分布を有する、請求項1に記載のインプリント用インク組成物。
- 前記粒子寸法分布が、5〜30nmである請求項2に記載のインプリント用インク組成物。
- 前記遷移金属酸化物粒子が、TiO2、ZrO2、HfO2、Ta2O3、V2O3、Nb2O3、Y2O3、Fe2O3、BaTiO3及びSrTiO3粒子から選択される、請求項1ないし3の何れか一項に記載のインプリント用インク組成物。
- 前記遷移金属酸化物粒子が、アナターゼ又はルチルTi02粒子である、請求項4に記載のインプリント用インク組成物。
- 前記遷移金属酸化物粒子が、ルチルTi02粒子である、請求項5に記載のインプリント用インク組成物。
- 前記重合可能な含有物の全重量に対して20重量%までのポリマ母材前駆物質を更に有する、請求項1ないし6の何れか一項に記載のインプリント用インク組成物。
- 前記ポリマ母材前駆物質がポリシロキサン前駆物質である、請求項7に記載のインプリント用インク組成物。
- アンモニアを有し、1より大きなpHを更に有する、請求項1ないし10の何れか一項に記載のインプリント用インク組成物。
- 前記溶媒は、水及びメタノールの少なくとも一方から選択され、オプションとして当該インプリント用インク組成物の全重量に対して30重量%までのプロポキシエタノールを更に有する、請求項1ないし11の何れか一項に記載のインプリント用インク組成物。
- パターン化された層の製造方法であって、
パターン化された面を備えた弾性材料を有するスタンプを準備するステップと、
前記パターン化された面により請求項1ないし12の何れか一項に記載のインプリント用インク組成物をインプリントするステップと、
前記インプリント用インク組成物の前記重合可能な含有物を硬化させるステップと、
硬化された前記重合可能な含有物から前記スタンプを解き放して、前記パターン化された層を得るステップと、
を有する、方法。 - 前記弾性材料がポリシロキサンである、請求項13に記載の製造方法。
- 前記弾性材料がポリジメチルシロキサンである請求項14に記載の製造方法。
- 前記インプリントされ硬化されたインプリント用インク組成物を、10〜60分の期間にわたり80〜120℃の範囲の温度まで加熱するステップを更に有する、請求項13ないし15の何れか一項に記載の製造方法。
- 光学エレメントの製造方法であって、請求項13ないし16の何れか一項に記載の製造方法によりパターン化された層を製造するステップを有し、前記パターン化された層のパターンが、前記光学エレメントの光学的要件を満たすように調整される、製造方法。
- 前記パターン化された層が、少なくとも1.7の電磁スペクトルの可視範囲における屈折率を有する、請求項17に記載の製造方法。
- 前記パターン化された層が、少なくとも1.8の電磁スペクトルの可視範囲における屈折率を有する、請求項18に記載の製造方法。
- 前記パターン化された層が、少なくとも1.9の電磁スペクトルの可視範囲における屈折率を有する、請求項19に記載の製造方法。
- 当該光学エレメントが、レンズ、光散乱エレメント、コリメータ、光導入エレメント、導波器、又は、リング共振器、波長フィルタ及び振幅調整器のようなフォトニック装置である、請求項17ないし20の何れか一項に記載の製造方法。
- 少なくとも1つの固体光源を用意するステップと、請求項17ないし21の何れか一項に記載の製造方法により光学エレメントを製造するステップと、前記光学エレメントが前記少なくとも1つの固体光源の発光出力の少なくとも一部を再指向させるように前記光学エレメントと前記少なくとも1つの固体光源とを光学的に結合するステップとを有する、照明装置の製造方法。
- 請求項17ないし21の何れか一項に記載の製造方法により光学エレメントを製造するステップと、前記光学エレメントを光採集層として光センサに組み込むステップと有する、光センサの製造方法。
- 請求項17ないし21の何れか一項に記載の製造方法により光学エレメントを製造するステップと、前記光学エレメントを光導入層として光起電力電池に組み込むステップとを有する、光起電力装置の製造方法。
- 当該光起電力装置が太陽電池又は太陽電池パネルである、請求項24に記載の光起電力装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15190487 | 2015-10-20 | ||
EP15190487.7 | 2015-10-20 | ||
PCT/EP2016/074544 WO2017067838A1 (en) | 2015-10-20 | 2016-10-13 | Imprinting ink composition, imprinting method, optical element lighting device, optical sensor and photovoltaic device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019504464A JP2019504464A (ja) | 2019-02-14 |
JP6868619B2 true JP6868619B2 (ja) | 2021-05-12 |
Family
ID=54359899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018520097A Active JP6868619B2 (ja) | 2015-10-20 | 2016-10-13 | インプリント用インク組成物、インプリント方法、光学エレメント、照明装置、光センサ及び光起電力装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US12006441B2 (ja) |
EP (1) | EP3365397A1 (ja) |
JP (1) | JP6868619B2 (ja) |
CN (1) | CN108137964A (ja) |
RU (1) | RU2745516C2 (ja) |
WO (1) | WO2017067838A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101827814B1 (ko) * | 2016-04-15 | 2018-02-12 | 한국기계연구원 | 나노임프린트 방식을 이용한 3차원 구조체의 제조방법 |
JP7267624B2 (ja) * | 2017-09-29 | 2023-05-02 | ユニバーシティ オブ マサチューセッツ | 複雑な金属酸化物構造のパターン形成 |
EP3582004A1 (en) | 2018-06-13 | 2019-12-18 | Koninklijke Philips N.V. | Imprinting composition and method of forming a patterned layer using the same |
CA3173581A1 (en) * | 2020-03-05 | 2021-09-10 | Sicpa Holding Sa | Uv-vis radiation curable security inks |
US11892771B2 (en) | 2020-04-20 | 2024-02-06 | Applied Materials, Inc. | Methods for increasing the density of high-index nanoimprint lithography films |
EP3929658A1 (en) * | 2020-06-23 | 2021-12-29 | Koninklijke Philips N.V. | Imprinting method and patterned layer |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050069718A1 (en) * | 2003-09-30 | 2005-03-31 | Voss-Kehl Jessica L. | Printable insulating compositions and printable articles |
KR101499043B1 (ko) * | 2007-03-30 | 2015-03-05 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 광 아웃커플링이 향상된 oled |
CN101842420B (zh) * | 2007-08-31 | 2014-04-09 | 卡伯特公司 | 制备改性金属氧化物的纳米颗粒分散体的方法 |
JP2010186979A (ja) * | 2008-12-03 | 2010-08-26 | Fujifilm Corp | インプリント用硬化性組成物、パターン形成方法およびパターン |
JP2011170073A (ja) * | 2010-02-18 | 2011-09-01 | Jsr Corp | 硬化性組成物及び光学部材 |
JP5518772B2 (ja) | 2011-03-15 | 2014-06-11 | 信越化学工業株式会社 | パターン形成方法 |
US20130183500A1 (en) * | 2012-01-18 | 2013-07-18 | Vladek Kasperchik | Printing method |
US11133118B2 (en) | 2012-05-22 | 2021-09-28 | University Of Massachusetts | Patterned nanoparticle structures |
JP5897234B1 (ja) | 2012-12-21 | 2016-03-30 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 組成物、インプリンティング・インクおよびインプリンティング方法 |
-
2016
- 2016-10-13 CN CN201680061499.4A patent/CN108137964A/zh active Pending
- 2016-10-13 WO PCT/EP2016/074544 patent/WO2017067838A1/en active Application Filing
- 2016-10-13 US US15/767,456 patent/US12006441B2/en active Active
- 2016-10-13 JP JP2018520097A patent/JP6868619B2/ja active Active
- 2016-10-13 RU RU2018118323A patent/RU2745516C2/ru active
- 2016-10-13 EP EP16782209.7A patent/EP3365397A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN108137964A (zh) | 2018-06-08 |
RU2745516C2 (ru) | 2021-03-25 |
JP2019504464A (ja) | 2019-02-14 |
EP3365397A1 (en) | 2018-08-29 |
RU2018118323A (ru) | 2019-11-21 |
WO2017067838A9 (en) | 2018-06-28 |
RU2018118323A3 (ja) | 2020-03-16 |
US20180305567A1 (en) | 2018-10-25 |
US12006441B2 (en) | 2024-06-11 |
WO2017067838A1 (en) | 2017-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6868619B2 (ja) | インプリント用インク組成物、インプリント方法、光学エレメント、照明装置、光センサ及び光起電力装置 | |
AU2014376585B2 (en) | Optical substrate, mold to be used in optical substrate manufacture, and light emitting element including optical substrate | |
AU2014294412B2 (en) | Method for manufacturing substrate having textured structure | |
JP5897234B1 (ja) | 組成物、インプリンティング・インクおよびインプリンティング方法 | |
US20140037841A1 (en) | Antireflective coatings with controllable porosity and durability properties using controlled exposure to alkaline vapor | |
JP7496444B2 (ja) | 光取り出し部材 | |
KR20190142327A (ko) | 나노임프린트 리소그래피 프로세스 및 그것으로부터 획득가능한 패터닝된 기재 | |
US11644749B2 (en) | Imprinting composition and method of forming a patterned layer using the same | |
KR101299359B1 (ko) | 광추출 효율이 향상된 2차원 광결정 구조체 및 이의 제조방법 | |
CN114514469B (zh) | 压印方法和图案化层 | |
JP7479784B2 (ja) | 光取り出し部材 | |
Zhang et al. | Fabrication of heteromorphic microlens arrays built in the TiO 2/ormosils composite films for organic light-emitting diode applications | |
US20240103363A1 (en) | Imprinted method and patterned layer | |
JP2021189394A (ja) | マイクロレンズアレイを用いた光拡散板及びその製造方法 | |
DE102010044132A1 (de) | Solarzelle mit einer homogenen Lichteinfangstruktur und Verfahren zur Herstellung derselben |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191010 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200422 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200522 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200703 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201102 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20201109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201202 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20210107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210323 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210412 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6868619 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |