JP6868211B2 - Thin-film deposition mask device, its manufacturing method, and mask used in the thin-film deposition mask device - Google Patents

Description

The present invention relates to a vapor deposition mask device and a method for manufacturing the same. The present invention also relates to a mask used in a vapor deposition masking apparatus.

In recent years, display devices used in portable devices such as smartphones and tablet PCs are required to have high definition, for example, a pixel density of 400 ppi or more. Further, even in a portable device, there is an increasing demand for supporting ultra full high-definition, and in this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

Among display devices, organic EL display devices are attracting attention because of their good responsiveness, low power consumption, and high contrast. As a method for forming the pixels of the organic EL display device, a method using a thin-film deposition mask device including a thin-film deposition mask in which through holes arranged in a desired pattern are formed and a frame supporting the thin-film deposition mask is known. .. Specifically, first, the vapor deposition mask of the vapor deposition mask device is brought into close contact with the substrate for the organic EL display device, and then both the vapor deposition mask device and the substrate are put into the vapor deposition apparatus to vapor-deposit the organic material on the substrate. Perform a thin-film deposition process.

In order to precisely manufacture an organic EL display device having a high pixel density, it is preferable that the thickness of the vapor deposition mask is small. On the other hand, when the thickness of the vapor deposition mask is reduced, the rigidity of the vapor deposition mask is reduced, and the vapor deposition mask is liable to have wrinkles and the like. If the flatness of the vapor deposition mask is impaired by undulations such as wrinkles, the position of the vapor deposition material adhering to the substrate deviates from the design position. As a method for solving such a problem, for example, as disclosed in Patent Document 1, a method of fixing the vapor deposition mask to the frame in a state where tension is applied to the vapor deposition mask is known.

Further, in Patent Document 1, vapor deposition is performed in a state where the first mask having a plurality of openings for regulating the vapor deposition range is superposed on the second mask provided with the slit-shaped through hole. The process is being carried out. One opening corresponds to one organic EL display device. According to Patent Document 1, a plurality of vapor deposition materials for organic EL display devices can be formed on one substrate. That is, a plurality of organic EL display devices can be mounted on one substrate.

Japanese Unexamined Patent Publication No. 2003-68454

When the pitch in which the openings of the first mask are lined up is an integral multiple of the pitch in which the second plurality of through holes are lined up, the positional relationship of the plurality of through holes with respect to the openings is the same in each of the plurality of openings. Can be. For example, the distance from the outer edge of the opening to the through hole closest to the outer edge of the opening can be the same for each of the plurality of openings. On the other hand, when the pitch in which the openings of the first mask are lined up is not an integral multiple of the pitch in which the second plurality of through holes are lined up, the positional relationship of the plurality of through holes with respect to the openings in each of the plurality of openings is Can be different. For example, the distance from the outer edge of the opening to the through hole closest to the outer edge of the opening can be different for each of the plurality of openings. As a result, individual differences may occur in the position of the display area for displaying the image in the organic EL display device.

An object of the present invention is to provide a vapor deposition mask apparatus capable of effectively solving such a problem, a method for producing the same, and a mask used in the vapor deposition mask apparatus.

In the present invention, a first mask in which a plurality of openings arranged along at least the first direction are formed, and a plurality of through holes which are overlapped with the first mask and have a size smaller than the openings are formed. A plurality of masks comprising a second mask, the first mask, and a frame supporting the second mask, the second mask overlapping the opening of the first mask and arranging at least along the first direction. The first region and the second region located between the two adjacent first regions in the first direction are provided, and in the first region, the plurality of through holes are formed in the first direction. They are lined up along the eleventh pitch and at the twelfth pitch in the second direction intersecting the first direction, and in the second region, the plurality of the through holes are the first along the first direction. It is a vapor deposition mask device that is lined up at a 21st pitch different from the 11th pitch and is lined up at the 22nd pitch that is the same as the 12th pitch in the second direction.

In the vapor deposition mask apparatus according to the present invention, the 21st pitch of the plurality of through holes located in the second region is larger than the 11th pitch of the plurality of through holes located in the first region. May be good.

In the vapor deposition mask device according to the present invention, the dimension of the through hole located in the second region in the first direction is larger than the dimension of the through hole located in the first region in the first direction. You may be.

In the vapor deposition mask apparatus according to the present invention, the plurality of the through holes located in the first region and the plurality of the through holes located in the second region may be arranged in a straight line along the first direction. ..

In the vapor deposition mask apparatus according to the present invention, the plurality of openings of the first mask are arranged along the first direction and the second direction, and the plurality of the first regions of the second mask are the said. They may be arranged along the first direction and the second direction so as to overlap the opening of the first mask. In this case, the second mask further includes a third region located between the two adjacent first regions in the second direction, and in the third region, the plurality of through holes are the first. They may be arranged along the direction at the same 31st pitch as the 11th pitch, and may be arranged at the 32nd pitch different from the 12th pitch in the second direction.

In the vapor deposition mask apparatus according to the present invention, the 32nd pitch of the plurality of through holes located in the second region is larger than the 12th pitch of the plurality of through holes located in the first region. May be good.

In the vapor deposition mask device according to the present invention, the dimension of the through hole located in the third region in the second direction is larger than the dimension of the through hole located in the first region in the second direction. You may be.

In the vapor deposition mask apparatus according to the present invention, the plurality of the through holes located in the first region and the plurality of the through holes located in the third region may be arranged in a straight line along the second direction. ..

In the vapor deposition mask apparatus according to the present invention, the second mask further includes a fourth region located between two adjacent third regions in the first direction, and a plurality of the through holes in the fourth region. May be lined up along the first direction at the same 41st pitch as the 21st pitch, and may be lined up at the 42nd pitch same as the 32nd pitch in the second direction.

In the vapor deposition mask device according to the present invention, the dimension of the through hole located in the fourth region in the first direction is larger than the dimension of the through hole located in the first region in the first direction. The dimension of the through hole located in the fourth region in the second direction may be larger than the dimension of the through hole located in the first region in the second direction.

In the vapor deposition mask apparatus according to the present invention, the plurality of through holes located in the second region and the plurality of the through holes located in the fourth region are arranged in a straight line along the second direction. The plurality of the through holes located in the third region and the plurality of the through holes located in the fourth region may be arranged in a straight line along the first direction.

In the vapor deposition mask apparatus according to the present invention, the 21st pitch of the plurality of through holes located in the second region is smaller than the 11th pitch of the plurality of through holes located in the first region. May be good.

In the vapor deposition mask device according to the present invention, the dimension of the through hole located in the second region in the first direction is smaller than the dimension of the through hole located in the first region in the first direction. You may be.

The present invention is a mask in which a plurality of through holes are formed, and is located between a plurality of first regions arranged along at least the first direction and two adjacent first regions in the first direction. The first region comprises two regions, the plurality of through holes are arranged at an eleventh pitch along the first direction, and are arranged at a twelfth pitch in a second direction intersecting the first direction. In the second region, the plurality of through holes are arranged along the first direction at a 21st pitch different from the 11th pitch, and are the same as the 12th pitch in the second direction. It is a mask that is lined up at the 22nd pitch of.

The present invention is a method for manufacturing the vapor deposition mask apparatus described above, which comprises a step of preparing a base material and a step of forming the above-mentioned mask on the base material by a plating method as the second mask. A method for manufacturing a vapor deposition mask apparatus, comprising a step of fixing the second mask to the first mask and a step of peeling the second mask from the base material.

According to the present invention, it is possible to prevent the positional relationship of the plurality of through holes of the second mask from being dispersed in the plurality of openings of the first mask.

It is a figure which shows the vapor deposition apparatus provided with the vapor deposition mask apparatus by one Embodiment of this invention. It is sectional drawing which shows the organic EL display apparatus manufactured by using the vapor deposition mask apparatus shown in FIG. It is a top view which shows the 1st mask of a thin film deposition mask apparatus. It is a top view which shows the 2nd mask of a thin film deposition mask apparatus. It is a top view which shows the case where the vapor deposition mask apparatus provided with a 1st mask and a 2nd mask is seen from the 1st mask side. It is a top view which shows the part of the 2nd mask enlarged. FIG. 5 is an enlarged plan view showing a portion of the second mask shown in FIG. 6 surrounded by the frame VII. It is a figure for demonstrating the deformation which occurs in the part of the 2nd mask which does not include a through hole. It is a figure for demonstrating the deformation which occurs in a part of the 2nd mask including a through hole. It is a figure which shows the process of forming a resist layer on a base material. It is a figure which shows the process of forming a plating layer in the gap of a resist layer. It is a figure which shows the process of removing a resist layer and obtaining a 2nd mask. It is a figure which shows the process of providing a 1st mask and a frame on a 2nd mask. It is a figure which shows the process of peeling a 2nd mask from a base material. It is a top view which shows one modification of the vapor deposition mask apparatus. It is a top view which shows one modification of the 2nd mask.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, the scale, aspect ratio, etc. are appropriately changed from those of the actual product and exaggerated for the convenience of illustration and comprehension.

1 to 14 are diagrams for explaining one embodiment of the present invention. In the following embodiments and modifications thereof, a method for manufacturing a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example. However, the present invention is not limited to such applications, and the present invention can be applied to vapor deposition masks used for various purposes.

In addition, in this specification, the terms "board", "sheet", and "film" are not distinguished from each other based only on the difference in designation. For example, "board" is a concept that includes members that can be called sheets or films.

Further, the "plate surface (sheet surface, film surface)" is a target plate member (sheet-like member) when the target plate-like (sheet-like, film-like) member is viewed as a whole and from a broad perspective. , A film-like member) that coincides with the plane direction. Further, the "normal direction" used for the plate member refers to the normal direction with respect to the plate surface (seat surface, film surface) of the member.

In addition, as used herein, terms such as "parallel," "orthogonal," "identical," "equivalent," and lengths and angles that specify the shape, geometrical conditions, and physical properties and their degree. In addition, the values of physical properties, etc. shall be interpreted including the range in which similar functions can be expected without being bound by the strict meaning.

(Evaporation equipment)
First, a thin-film deposition apparatus 90 that performs a thin-film deposition process for depositing a thin-film deposition material on an object will be described with reference to FIG. As shown in FIG. 1, the vapor deposition apparatus 90 includes a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask apparatus 10 inside. Further, the vapor deposition apparatus 90 further includes an exhaust means for creating a vacuum atmosphere inside the vapor deposition apparatus 90. The crucible 94 accommodates a vapor deposition material 98 such as an organic light emitting material. The heater 96 heats the crucible 94 to evaporate the vapor deposition material 98 in a vacuum atmosphere. The vapor deposition mask device 10 is arranged so as to face the crucible 94.

(Evaporation mask device)
Hereinafter, the vapor deposition mask device 10 will be described. As shown in FIG. 1, the vapor deposition mask device 10 includes a first mask 20 and a second mask 30, and a frame 15 that supports the first mask 20 and the second mask 30. The frame 15 supports the first mask 20 and the second mask 30 in a state of being pulled in the plane direction so that the first mask 20 and the second mask 30 do not bend. As shown in FIG. 1, the vapor deposition mask device 10 has a inside of the vapor deposition device 90 so that the first mask 20 and the second mask 30 face a substrate to which the vapor deposition material 98 is attached, for example, an organic EL substrate 92. Placed in.

As shown in FIG. 1, the vapor deposition mask device 10 may include a magnet 93 arranged on the surface of the organic EL substrate 92 opposite to the first mask 20 and the second mask 30. By providing the magnet 93, the first mask 20 and the second mask 30 can be attracted to the magnet 93 side by a magnetic force, and the first mask 20 and the second mask 30 can be brought into close contact with the organic EL substrate 92.

As shown in FIG. 1, the first mask 20 has a plate member 21 and a plurality of openings 22 formed in the plate member 21. Further, the second mask 30 has a plate member 31 and a plurality of through holes 32 formed in the plate member 31 so as to overlap the opening 22 of the first mask 20. The thickness of the first mask 20 is, for example, 50 μm or more and 500 μm or less, and the thickness of the second mask 30 is 1 μm or more and 8 μm or less. The through hole 32 has a smaller size than the opening 22. For example, the size of the through hole 32 is 10 μm or more and 70 μm or less. The through hole 32 of the second mask 30 is also formed at a position that does not overlap with the opening 22 of the first mask 20.

In the thin-film deposition apparatus 90 shown in FIG. 1, the vapor deposition material 98 that has evaporated from the pot 94 and reached the vapor deposition mask apparatus 10 passes through the opening 22 of the first mask 20 and the through hole 32 of the second mask 30 and is an organic EL substrate. Adheres to 92. Thereby, the vapor deposition material 98 can be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the positions of the opening 22 of the first mask 20 and the through hole 32 of the second mask 30.

FIG. 2 is a cross-sectional view showing an organic EL display device 100 manufactured by using the vapor deposition device 90 of FIG. The organic EL display device 100 includes an organic EL substrate 92 and pixels including a vapor-deposited material 98 provided in a pattern.

If it is desired to display colors in a plurality of colors, a thin-film deposition device 90 equipped with a thin-film deposition mask device 10 corresponding to each color is prepared, and the organic EL substrate 92 is sequentially put into each thin-film deposition device 90. Thereby, for example, the organic light emitting material for red, the organic light emitting material for green, and the organic light emitting material for blue can be vapor-deposited on the organic EL substrate 92 in this order.

By the way, the thin-film deposition treatment may be carried out inside the thin-film deposition apparatus 90 which has a high temperature atmosphere. In this case, during the vapor deposition process, the first mask 20, the second mask 30, the frame 15, and the organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated. At this time, the first mask 20, the second mask 30, the frame 15, and the organic EL substrate 92 show the behavior of dimensional change based on their respective thermal expansion coefficients. In this case, if the coefficients of thermal expansion of the organic EL substrate 92 are significantly different from those of the first mask 20, the second mask 30, and the frame 15, misalignment occurs due to the difference in their dimensional changes, and as a result, the organic EL The dimensional accuracy and position accuracy of the vapor-deposited material adhering to the substrate 92 are lowered.

In order to solve such a problem, it is preferable that the coefficient of thermal expansion of the first mask 20, the second mask 30, and the frame 15 is a value equivalent to the coefficient of thermal expansion of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the first mask 20, the second mask 30, and the frame 15. For example, as a material for the plate members constituting the first mask 20 and the second mask 30, an iron alloy containing 30% by mass or more and 54% by mass or less of nickel can be used. Specific examples of the nickel-containing iron alloy include an Invar material containing 34% by mass or more and 38% by mass or less of nickel, a super Invar material containing 30% by mass or more and 34% by mass or less of nickel, and further cobalt. Examples thereof include a low thermal expansion Fe—Ni based plating alloy containing nickel of mass% or more and 54 mass% or less.

If the temperatures of the first mask 20, the second mask 30, the frame 15, and the organic EL substrate 92 do not reach high temperatures during the vapor deposition process, thermal expansion of the first mask 20, the second mask 30, and the frame 15 is performed. It is not particularly necessary to set the coefficient to a value equivalent to the coefficient of thermal expansion of the organic EL substrate 92. In this case, as the material constituting the first mask 20 and the second mask 30, a material other than the above-mentioned iron alloy may be used. For example, an iron alloy other than the above-mentioned nickel-containing iron alloy, such as an iron alloy containing chromium, may be used. As the iron alloy containing chromium, for example, a so-called stainless steel iron alloy can be used. Further, alloys other than iron alloys such as nickel and nickel-cobalt alloys may be used.

(1st mask)
Next, the first mask 20 will be described in detail. FIG. 3 is a plan view showing the first mask 20. As shown in FIG. 3, the plurality of openings 22 of the first mask 20 are arranged along the first direction D1 and the second direction D2. Both the first direction D1 and the second direction D2 are directions parallel to the plane direction of the plate member 21 of the first mask 20. In this embodiment, the second direction D2 is orthogonal to the first direction D1.

One opening 22 of the first mask 20 corresponds to a display area of one organic EL display device 100. By providing a plurality of openings 22 in one thin-film deposition mask device 10, multi-sided vapor deposition of the organic EL display device 100 becomes possible.

As shown in FIG. 3, the opening 22 has, for example, a substantially quadrangular contour in a plan view, or more accurately, a substantially rectangular contour in a plan view. Although not shown, each opening 22 can have contours having various shapes depending on the shape of the display area of the organic EL substrate 92. For example, each opening 22 may have a circular contour.

In FIG. 3, reference numeral V1 represents the pitch of the plurality of openings 22 in the first direction D1, and reference numeral V2 represents the pitch of the plurality of openings 22 in the second direction D2. The pitch V1 and pitch V2 are, for example, 50 mm or more and 180 mm or less.

(2nd mask)
Next, the second mask 30 will be described in detail. FIG. 4 is a plan view showing the second mask 30. As shown in FIG. 4, the plurality of through holes 32 of the second mask 30 are formed over the entire area of the perforated region 33 overlapping the plurality of openings 22 of the first mask 20. According to the example shown in FIG. 4, the rigidity of the second mask 30 and the internal stress generated in the second mask 30 are set to the positions as compared with the case where the through hole 32 is provided only in the portion corresponding to the display region of the organic EL substrate 92. It can be made uniform regardless of. As a result, it is possible to prevent the second mask 30 from having undulations such as wrinkles due to variations in rigidity and internal stress. A region in which the through hole 32 is not formed may exist outside the perforated region 33 of the plate member 31.

FIG. 5 is a plan view showing a case where the vapor deposition mask device 10 including the first mask 20 and the second mask 30 is viewed from the first mask 20 side. As shown in FIG. 5, of the through holes 32 of the second mask 30, the through holes 32 that do not overlap with the opening 22 of the first mask 20 are covered with the plate member 21 of the first mask 20. In this case, the thin-film deposition material 98 that has flown from the thin-film deposition source reaches the organic EL substrate 92 through the through-hole 32 that overlaps the opening 22 of the first mask 20 among the through-holes 32 of the second mask 30. In the following description, the region of the second mask 30 that overlaps with the opening 22 of the first mask 20 is also referred to as the first region 41.

By the way, the pitches of the plurality of through holes 32 in the first region 41 of the second mask 30 are determined according to the pitches of the pixels of the organic EL substrate 92. On the other hand, the pitches of the plurality of openings 22 of the first mask 20 are determined according to the outer dimensions of the organic EL substrate 92 and the like. As described above, the pitch of the through hole 32 and the pitch of the opening 22 can be determined independently of each other based on different viewpoints. Therefore, it is considered that the pitches V1 and V2 of the opening 22 are not necessarily an integral multiple of the pitch of the through hole 32. In this case, the positional relationship of the plurality of through holes 32 with respect to the openings 22 may differ in each of the plurality of openings 22. For example, from a predetermined reference position of the opening 22 (the position of the corner of the opening 22 in the example of FIG. 5) A to the through hole 32 of the first region 41 of the second mask 30 closest to the reference position A. The distance can be different at each of the plurality of openings 22. In other words, the phases of the plurality of regularly arranged through holes 32 at the reference position A of each opening 22 may be different in each of the plurality of openings 22. As a result, for example, it is conceivable that individual differences occur in the position of the display area of the organic EL display device 100.

In consideration of such a problem, in the present embodiment, the pitch of the through holes 32 that do not overlap the opening 22 of the first mask 20 among the through holes 32 of the second mask 30 is set to the through holes of the first region 41. It is proposed to make it different from the pitch of 32. Hereinafter, the pitch of the through holes 32 of the second mask 30 will be described in detail with reference to FIGS. 6 and 7.

FIG. 6 is an enlarged plan view showing a part of the second mask 30. In FIG. 6, the through hole 32 is omitted in order to prevent the figure from becoming complicated.

As described above, the second mask 30 has a plurality of first regions 41 that overlap the opening 22 of the first mask 20. The plurality of first regions 41 are arranged along the first direction D1 and the second direction D2, similarly to the opening 22.

Further, as shown in FIG. 6, the second mask 30 further has a second region 42, a third region 43, and a fourth region 44. Further, the second mask 30 may further have a fifth region 45. The second region 42 is located between two adjacent first regions 41 in the first direction D1. The third region 43 is located between two adjacent first regions 41 in the second direction D2. The fourth region 44 is located between two adjacent third regions 43 in the first direction D1. Further, the fourth region 44 is located between two adjacent second regions 42 in the second direction D2. The fifth region 45 is located between the first region 41 and the second region 42 or the third region 43. The plurality of through holes 32 are formed in the first region 41, the second region 42, the third region 43, the fourth region 44, and the fifth region 45, respectively.

Hereinafter, the through holes 32 located in the first region 41 to the fifth region 45 will be described with reference to FIG. 7. FIG. 7 is an enlarged plan view showing a portion of the second mask 30 shown in FIG. 6 surrounded by the frame VII.

In the example shown in FIG. 7, the through hole 32 has a substantially quadrangular contour in a plan view, or more accurately, a substantially rectangular shape in a plan view. Although not shown, each through hole 32 can have contours having various shapes depending on the shape of the pixels of the organic EL display device 100. For example, each through hole 32 may have a circular contour.

[First area]
As shown in FIG. 7, in the first region 41, the plurality of through holes 32 are arranged at the eleventh pitch P11 along the first direction D1 and are arranged at the twelfth pitch P12 in the second direction D2. Further, the through hole 32 of the first region 41 has a dimension S11 in the first direction D1 and a dimension S12 in the second direction D2.

[Second area]
As shown in FIG. 7, in the second region 42, the plurality of through holes 32 are arranged along the first direction D1 at a 21st pitch P21 different from the 11th pitch P11, and are twelfth in the second direction D2. They are lined up at the 22nd pitch P22, which is the same as the pitch P12. In the example shown in FIG. 7, the 21st pitch P21 is larger than the 11th pitch P11.

Hereinafter, the reason why the 21st pitch P21 is different from the 11th pitch P11 will be described. The 21st pitch P21 is defined so that the distance K1 in the first direction D1 from the reference position A to the through hole 32 of the first region 41 is the same in the two adjacent first regions 41 in the first direction D1. There is. Thereby, the phases of the plurality of through holes 32 regularly arranged in the first direction D1 in the first region 41 at the reference position A of each opening 22 can be made the same in each of the plurality of openings 22. .. As a result, the 21st pitch P21 is different from the 11th pitch P11. For example, the 21st pitch P21 is larger than the 11th pitch P11.

Note that "different" means that the absolute value of the difference between the average value of one pitch and the average value of the other pitch is 5% or more of the average value of one pitch. Further, "same" means that the absolute value of the difference between the average value of one pitch and the average value of the other pitch is less than 5% of the average value of one pitch. Further, "large" means that the value obtained by subtracting the average value of the other pitch from the average value of one pitch is 5% or more of the average value of one pitch. For example, the value obtained by subtracting the average value of the 11th pitch P11 of the through hole 32 of the first region 41 from the average value of the 21st pitch P21 of the through hole 32 of the second region 42 is 5 of the average value of the 21st pitch P21. % Or more.

[Third area]
As shown in FIG. 7, in the third region 43, the plurality of through holes 32 are arranged along the first direction D1 at the same 31st pitch P31 as the 11th pitch P11, and the twelfth in the second direction D2. They are lined up at the 32nd pitch P32, which is different from the pitch P12. In the example shown in FIG. 7, the 32nd pitch P32 is larger than the 12th pitch P12.

Hereinafter, the reason why the 32nd pitch P32 is different from the 12th pitch P12 will be described. The 32nd pitch P32 is defined so that the distance K2 in the second direction D2 from the reference position A to the through hole 32 of the first region 41 is the same in the two adjacent first regions 41 in the second direction D2. There is. Thereby, the phases of the plurality of through holes 32 regularly arranged in the second direction D2 in the first region 41 at the reference position A of each opening 22 can be made the same in each of the plurality of openings 22. .. As a result, the 32nd pitch P32 is different from the 12th pitch P12. For example, the 32nd pitch P32 is larger than the 12th pitch P12.

[Fourth area]
As shown in FIG. 7, in the fourth region 44, the plurality of through holes 32 are arranged along the first direction D1 at the same 41st pitch P41 as the 21st pitch P21, and the 32nd through hole 32 in the second direction D2. They are lined up at the 42nd pitch P42, which is the same as the pitch P32.

[Fifth area]
In the fifth region 45, the plurality of through holes 32 are arranged along the first direction D1 at the same pitch as the eleventh pitch P11, and are arranged at the same pitch as the twelfth pitch P12 in the first direction D1. May be good. Further, the through hole 32 of the fifth region 45 may have the same dimension as the dimension S11 in the first direction D1 and may have the same dimension as the twelfth pitch P12 in the second direction D2.

As described above, in the present embodiment, in the second region 42 and the fourth region 44, the 21st pitch P21 and the 41st pitch P41 of the through hole 32 in the first direction D1 are formed through the through hole of the first region 41. It is made larger than the 11th pitch P11 of 32. In this case, if the dimensions S21 and S41 of the through holes 32 of the second region 42 and the fourth region 44 in the first direction D1 remain the same as the dimensions S11 of the through holes 32 of the first region 41, the first direction The rigidity of the second region 42 and the fourth region 44 in D1 is higher than the rigidity of the first region 41. When there is a difference in the rigidity of each region, there is a difference in the amount of elongation of each region when stress is generated in the second mask 30 in the first direction D1, and as a result, the second mask 30 has undulations such as wrinkles. Is thought to occur.

Similarly, in the present embodiment, in the third region 43 and the fourth region 44, the 32nd pitch P32 and the 42nd pitch P42 of the through hole 32 in the second direction D2 are formed in the through hole 32 of the first region 41. It is larger than the 12th pitch P12. In this case, if the dimension S32 and the dimension S42 in the second direction D2 of the through hole 32 of the third region 43 and the fourth region 44 remain the same as the dimension S12 of the through hole 32 of the first region 41, the second direction The rigidity of the third region 43 and the fourth region 44 in D2 is higher than the rigidity of the first region 41. When there is a difference in the rigidity of each region, there is a difference in the amount of elongation of each region when stress is generated in the second mask 30 in the second direction D2, and as a result, the second mask 30 has undulations such as wrinkles. Is thought to occur.

In consideration of such a problem, it is preferable to change the size of the through hole 32 according to the pitch as described below.

As shown in FIG. 7, the through hole 32 of the second region 42 has a dimension S21 in the first direction D1 and a dimension S22 in the second direction D2. In the example shown in FIG. 7, the dimension S22 is the same as the dimension S12. On the other hand, the dimension S21 is larger than the dimension S11. As a result, the aperture ratio in the second region 42 can be made equal to the aperture ratio in the first region 41, whereby the rigidity of the second region 42 in the first direction D1 is equal to the rigidity of the first region 41. Can be. Therefore, it is possible to prevent a difference between the amount of elongation of the first region 41 and the amount of elongation of the second region 42 when stress is generated in the second mask 30 in the first direction D1. This makes it possible to prevent the second mask 30 from having undulations such as wrinkles when stress is generated on the second mask 30 in the first direction D1.

The definitions of terms such as "different", "same", and "large" used for dimensions are the same as for pitch.

Preferably, the plurality of through holes 32 located in the first region 41 and the plurality of through holes 32 located in the second region 42 are aligned in a straight line along the first direction D1. As a result, it is possible to further suppress the occurrence of undulations such as wrinkles on the second mask 30 when stress is generated on the second mask 30 in the first direction D1.

Further, as shown in FIG. 7, the through hole 32 of the third region 43 has a dimension S31 in the first direction D1 and a dimension S32 in the second direction D2. In the example shown in FIG. 7, the dimension S31 is the same as the dimension S11. On the other hand, the dimension S32 is larger than the dimension S12. As a result, the aperture ratio in the third region 43 can be made equal to the aperture ratio in the first region 41, whereby the rigidity of the third region 43 in the second direction D2 is equal to the rigidity of the first region 41. Can be. Therefore, it is possible to prevent a difference between the amount of elongation of the first region 41 and the amount of elongation of the third region 43 when stress is generated in the second mask 30 in the second direction D2. This makes it possible to prevent the second mask 30 from having undulations such as wrinkles when stress is generated on the second mask 30 in the second direction D2.

Preferably, the plurality of through holes 32 located in the first region 41 and the plurality of through holes 32 located in the third region 43 are aligned in a straight line along the second direction D2. As a result, it is possible to further suppress the occurrence of undulations such as wrinkles on the second mask 30 when stress is generated on the second mask 30 in the second direction D2.

As shown in FIG. 7, the through hole 32 of the fourth region 44 has the dimension S41 in the first direction D1 and the dimension S42 in the second direction D2. In the example shown in FIG. 7, the dimension S41 is the same as the dimension S21, and the dimension S42 is the same as the dimension S32.

As described above, in the present embodiment, the pitch and dimensions of the through holes 32 of the second region 42, the third region 43, and the fourth region 44 are determined in at least one of the first direction D1 and the second direction D2. It is larger than the pitch and dimensions of the through holes 32 in the first region 41.
Generally, the accuracy required for the manufacturing apparatus and manufacturing conditions of the second mask 30 is determined based on the pitch and dimensions of the through holes 32 of the first region 41. Therefore, if the pitch and dimensions of the through holes 32 of the second region 42, the third region 43, and the fourth region 44 are made smaller than the pitch and dimensions of the through holes 32 of the first region 41, the second mask 30 The difficulty of manufacturing will increase, and it will be necessary to review the manufacturing equipment and manufacturing conditions.
On the other hand, in the present embodiment, the pitch and dimensions of the through holes 32 of the second region 42, the third region 43 and the fourth region 44 are set to be larger than the pitch and dimensions of the through holes 32 of the first region 41. It is set large. Therefore, the difficulty of manufacturing the second mask 30 does not change by forming the through holes 32 in the second region 42, the third region 43, and the fourth region 44. Therefore, the second mask 30 in which the through holes 32 are formed in the second region 42, the third region 43, and the fourth region 44 can be manufactured without reviewing the manufacturing apparatus and the manufacturing conditions.

Hereinafter, a specific example of a method of determining the dimensions of the through holes 32 so that the rigidity in each region of the second mask 30 becomes the same will be described with reference to FIGS. 8 and 9.

First, consider the rigidity of a part of the plate member 31 of the second mask 30 in which the through hole 32 is not formed. FIG. 8 is a diagram for explaining the deformation that occurs in a portion 37 of the second mask 30 that does not include the through hole 32. In FIG. 8, reference numeral L1 and reference numeral L2 are the dimensions of the part 37 in the first direction D1 and the second direction D2, respectively, before applying the force F1 along the first direction D1 to the part 37 of the plate member 31. .. Further, the symbol ΔL1 is the amount of elongation of the part 37 in the first direction D1 due to the force F1 along the first direction D1 being applied to the part 37 of the plate member 31.

The amount of elongation ΔL1 generated when the force F1 is applied to the portion 37 shown in FIG. 8 is expressed by the following equation.
σ = F1 / A1 ... (1)
In the formula (1), A1 is the cross-sectional area of the surface of the part 37 orthogonal to the first direction D1, and σ is the stress generated in the part 37. Equation (1) is transformed as follows.
σ = E × α × L1 ... (2)
In the formula (2), E is the Young's modulus of the material constituting a part 37, and is a value peculiar to the material. Further, α is the expansion / contraction ratio of the material constituting a part 37, and is a value peculiar to the material. α can be expressed by the following equation based on the strain ε of a part 37.
ε = ΔL1 / L1 = α × L1 ... (3)

Next, the rigidity of a part of the plate member 31 of the second mask 30 in which the through hole 32 is formed will be considered. FIG. 9 is a diagram for explaining the deformation that occurs in the portion 37 including the through hole 32 of the second mask 30. In this case, the dimension L1 of the part 37 in the first direction D1 is the 11th pitch P11, the 21st pitch P21, and the 31st pitch in the above-mentioned first region 41, second region 42, third region 43, and fourth region 44. Corresponds to P31 and 41st pitch P41. Similarly, the dimension L2 of the portion 37 in the second direction D2 is the twelfth pitch P12, the 22nd pitch P22, and the 32nd pitch in the first region 41, the second region 42, the third region 43, and the fourth region 44 described above. Corresponds to P32 and 42nd pitch P42. Further, the dimension M1 of the through hole 32 of the part 37 in the first direction D1 is the dimension S11, the dimension S21, of the through hole 32 in the first region 41, the second region 42, the third region 43, and the fourth region 44 described above. Corresponds to dimension S31 and dimension S41. Further, the dimension M2 of the through hole 32 of the part 37 in the first direction D1 is the dimension S12, the dimension S22, of the through hole 32 in the first region 41, the second region 42, the third region 43, and the fourth region 44 described above. Corresponds to dimension S32 and dimension S42.

The elongation amount ΔL1 generated when the force F1 is applied to the portion 37 shown in FIG. 9 is expressed by the following equation.
σ = G1 × α × L1 ... (4)
In the formula (4), α is the expansion / contraction ratio of the material constituting a part 37, and is a value peculiar to the material, as in the case of the formula (2). G1 is a coefficient determined according to the Young's modulus E1 of the material constituting the part 37, the dimensions L1 and L2 of the part 37, and the dimensions M1 and M2 of the through hole 32. In the following description, the coefficient represented by G1 is also referred to as a rigidity coefficient.

In order to suppress the occurrence of undulations such as wrinkles in the first region 41 to the fourth region 44 of the second mask 30, it is necessary to equalize the rigidity G1 in each of the first region 41 to the fourth region 44. preferable. Among the parameters contributing to the rigidity G1, the dimensions L1 and L2 of a part 37 are equal to the pitch of each region as described above. In other words, the dimensions L1 and L2 of the portion 37 are determined from the viewpoint of aligning the phases of the through holes 32 at the reference position A of each opening 22. Therefore, the parameters that can be adjusted to equalize the rigidity G1 of the first region 41 to the fourth region 44 are the dimensions M1 and M2 of the through holes 32 in each of the first region 41 to the fourth region 44.

Hereinafter, an example of a method of adjusting the dimensions M1 and M2 of the through holes 32 so that the rigidity G1 of the first region 41 to the fourth region 44 becomes the same will be described. First, the rigidity G1 in the part 37 of the first region 41 is calculated based on the dimensions P11 and P12 of the part 37 of the first region 41 and the dimensions S11 and S12 of the through hole 32. The dimensions P11 and P12 and the dimensions S11 and S12 are predetermined based on the pitch and dimensions of the pixels of the organic EL display device 100. For example, dimensions P11, P12 and dimensions S11, S12 are 44 μm, 44 μm, 29 μm, and 29 μm, respectively. In this case, the rigidity G1 in a part 37 of the first region 41 is 31.4 GPa.

Subsequently, the dimensions S21 and S22 of the through hole 32 of the second region 42 are adjusted so that the rigidity G1 in the part 37 of the second region 42 becomes equal to the rigidity G1 in the part 37 of the first region 41. The dimensions L1 and L2 of a part 37 of the second region 42, that is, the pitches P21 and P22 of the through holes 32 of the second region 42, are the phases of the through holes 32 at the reference position A of each opening 22 in the first direction D1. Is predetermined, for example, 61.6 μm and 44 μm. When the dimensions S21 and S22 of the through hole 32 of the second region 42 are adjusted so that the rigidity G1 of a part 37 of the second region 42 becomes 31.4 GPa, the dimensions S21 and S22 become, for example, 42.01 μm and 29 μm.

Subsequently, the dimensions S31 and S32 of the through hole 32 of the third region 43 are adjusted so that the rigidity G1 in the portion 37 of the third region 43 becomes equal to the rigidity G1 in the portion 37 of the first region 41. The dimensions L1 and L2 of a part 37 of the third region 43, that is, the pitches P31 and P32 of the through holes 32 of the third region 43 are the phases of the through holes 32 at the reference position A of each opening 22 in the second direction D2. Is predetermined, for example, 44 μm and 61.6 μm. When the dimensions S31 and S32 of the through hole 32 of the third region 43 are adjusted so that the rigidity G1 of a part 37 of the third region 43 becomes 31.4 GPa, the dimensions S31 and S32 become, for example, 29 μm and 42.01 μm.

Subsequently, the dimensions S41 and S42 of the through holes 32 of the fourth region 44 are adjusted so that the rigidity G1 in the portion 37 of the fourth region 44 becomes equal to the rigidity G1 in the portion 37 of the first region 41. The dimensions L1 and L2 of a part 37 of the fourth region 44, that is, the pitch P41 and the dimension P42 of the through hole 32 of the fourth region 44 are the pitch P21 and the third region 43 of the through hole 32 of the second region 42, respectively. It is the same as the pitch P32 of the through hole 32. When the dimensions S41 and S42 of the through hole 32 of the fourth region 44 are adjusted so that the rigidity G1 of a part 37 of the fourth region 44 becomes 31.4 GPa, the dimensions S41 and S42 become, for example, 41.97 μm and 41.97 μm. Become.

Table 1 summarizes examples of dimensions L1 and L2 of a part 37 of the first region 41 to the fourth region 44 and dimensions M1 and M2 of the through hole 32. Further, as a reference, in Table 1, the dimensions L1 and L2 of a part 37 of the first region 41 to the fourth region 44 are determined so that the phases of the through holes 32 at the reference position A of each opening 22 are aligned. , The calculation result of the rigidity G1 when the dimensions M1 and M2 of the through holes 32 of the second region 42 to the fourth region 44 are the same as the dimensions M1 and M2 of the through holes 32 of a part 37 of the first region 41. Shown.

According to the present embodiment, the pitch P21 in the first direction D1 of the through hole 32 of the second region 42 is different from the pitch P11 of the through hole 32 of the first region 41, and the through hole 32 of the third region 43 By making the pitch P32 in the second direction D2 different from the pitch P12 in the first region 41, the phase of the through hole 32 in the first region 41 of the second mask 30 at the reference position A of each opening 22 of the first mask 20. Can be aligned. Therefore, in the plurality of openings 22 of the first mask 20, it is possible to prevent the positional relationship of the plurality of through holes 32 of the second mask 30 from being scattered with respect to the openings 22. Further, by appropriately adjusting the dimensions of the through holes 32 of the second region 42 and the third region 43, it is possible to suppress the occurrence of a difference in the rigidity of each region. Therefore, it is possible to prevent the second mask 30 from having undulations such as wrinkles.

(Manufacturing method of thin-film mask equipment)
Next, a method of manufacturing the vapor deposition mask device 10 will be described with reference to FIGS. 10 to 14. Here, an example in which the second mask 30 of the vapor deposition mask apparatus 10 is formed by a plating process will be described.

First, the base material 51 is prepared. The base material 51 is, for example, a glass plate. Subsequently, as shown in FIG. 10, a resist layer 52 is formed on the base material 51 in a predetermined pattern. The resist layer 52 has a pattern corresponding to the through hole 32 of the second mask 30.

Subsequently, as shown in FIG. 11, a plating solution is supplied onto the base material 51 to form the plating layer 36 in the gap 53 of the resist layer 52. The components of the plating solution are defined so that the plating layer 36 contains, for example, 30% by mass or more and 54% by mass or less of nickel, and the remaining iron and unavoidable impurities. For example, as the plating solution, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used. Then, as shown in FIG. 12, the resist layer 52 is removed. In this way, the second mask 30 in which a plurality of through holes 32 are formed can be formed on the base material 51.

Subsequently, as shown in FIG. 13, the first mask 20 in which the plurality of openings 22 are formed is arranged on the second mask 30. Further, the frame 15 is arranged on the first mask 20. After that, the second mask 30 is fixed to the first mask 20, and the first mask 20 is fixed to the frame 15. As a fixing method, laser welding, spot welding, or the like can be adopted. For example, by irradiating the second mask 30 with a laser beam from the base material 51 side, the second mask 30 can be fixed to the first mask 20 and the first mask 20 can be fixed to the frame 15.

Subsequently, as shown in FIG. 14, the second mask 30 is peeled off from the base material 51. Thereby, the vapor deposition mask device 10 including the frame 15, the first mask 20 and the second mask 30 can be obtained.

Here, in the present embodiment, as described above, it is suppressed that the rigidity of each region of the second mask 30 is different. Therefore, when an internal stress is generated in the process of depositing the plating layer 36 constituting the second mask 30, it is possible to suppress a difference in the internal stress in each region of the second mask 30. As a result, after the second mask 30 is separated from the base material 51, undulations such as wrinkles are suppressed in the portion of the second mask 30 that is not fixed to the first mask 20 and the frame 15. Can be done.

It is possible to make various changes to the above-described embodiment. Hereinafter, a modified example will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same codes as those used for the corresponding parts in the above-described embodiment will be used for the parts that can be configured in the same manner as in the above-described embodiment. Duplicate explanations will be omitted. Further, when it is clear that the action and effect obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

In the above-described embodiment, the plurality of openings 22 of the first mask 20 are arranged in both the first direction D1 and the second direction D2, but the present invention is not limited to this. As shown in FIG. 15, the plurality of openings 22 of the first mask 20 may be arranged only in one direction, for example, in the first direction D1. In this case, the second mask 30 overlaps the opening 22 of the first mask 20 and is located between a plurality of first regions 41 arranged in the first direction D1 and two adjacent first regions 41. 42 and. Also in the example shown in FIG. 15, by making the pitch of the through hole 32 of the second region 42 in the first direction D1 different from the pitch of the through hole 32 of the first region 41, each opening 22 of the first mask 20 The phases of the through holes 32 in the first region 41 of the second mask 30 at the reference position can be aligned. Further, by appropriately adjusting the size of the through hole 32 of the second region 42, it is possible to suppress the occurrence of a difference between the rigidity of the first region 41 and the rigidity of the second region 42. Therefore, it is possible to prevent the second mask 30 from having undulations such as wrinkles.

Further, in the above-described embodiment, an example in which the second mask 30 is manufactured by a plating treatment is shown. However, the method for producing the second mask 30 is not particularly limited. For example, the second mask 30 may be manufactured by etching a plate member having a predetermined thickness to form a plurality of through holes. Also in this case, by appropriately adjusting the dimensions of the through hole 32 of the second region 42, for example, when tension is applied to the second mask 30, it is possible to prevent the second mask 30 from having wrinkles or other undulations. be able to.

Further, in the above-described embodiment, the 21st pitch P21 of the through hole 32 in the first direction D1 of the second region 42 of the second mask 30 is larger than the 11th pitch P11 of the through hole 32 in the first region 41. A large example is shown, but it is not limited to this. As shown in FIG. 16, the 21st pitch P21 in the first direction D1 of the through hole 32 of the second region 42 of the second mask 30 is smaller than the 11th pitch P11 of the through hole 32 of the first region 41. You may. Further, in the example shown in FIG. 16, the 32nd pitch P32 of the through hole 32 in the second direction D2 of the third region 43 of the second mask 30 is larger than the 12th pitch P12 of the through hole 32 in the first region 41. It's getting smaller.

As shown in FIG. 16, in the fourth region 44, the plurality of through holes 32 are arranged along the first direction D1 at the same 41st pitch P41 as the 21st pitch P21, and the 32nd through hole 32 in the second direction D2. They are lined up at the 42nd pitch P42, which is the same as the pitch P32.

Although not shown, the second mask 30 of this modification is also the fifth region 45 located between the first region 41 and the second region 42 or the third region 43, as in the case of the above-described embodiment. May further have.

Also in this modification, it is preferable to determine the dimensions of the through holes 32 so that the rigidity in each region of the second mask 30 is the same as in the case of the above-described embodiment. In this modification, since the 21st pitch P21 is smaller than the 11th pitch P11, the dimension S21 in the first direction D1 of the through hole 32 of the second region 42 is larger than the dimension S11 of the through hole 32 of the first region 41. Is also preferably small. Similarly, since the 32nd pitch P32 is smaller than the 12th pitch P12, the dimension S32 of the through hole 32 in the third region 43 in the first direction D1 is smaller than the dimension S12 of the through hole 32 in the first region 41. Is preferable. Table 2 shows an example of the dimensions L1 and L2 of a part 37 of the first region 41 to the fourth region 44 and the dimensions M1 and M2 of the through hole 32.

10 Thin-film deposition mask device 15 Frame 20 First mask 21 Plate member 22 Opening 30 Second mask 31 Plate member 32 Through hole 36 Plating layer 41 First region 42 Second region 43 Third region 44 Fourth region 45 Fifth region 51 Base material 52 Resist layer 90 Evaporation device 92 Organic EL substrate 98 Evaporation material

Claims (15)

A first mask in which a plurality of openings arranged along at least the first direction are formed,
A second mask that is overlapped with the first mask and has a plurality of through holes having a size smaller than that of the opening.
The first mask and the frame supporting the second mask are provided.
The second mask is
A plurality of first regions that overlap the opening of the first mask and are lined up at least along the first direction.
A second region located between the two adjacent first regions in the first direction is provided.
The aperture ratio of the second region is equivalent to the aperture ratio of the first region.
In the first region, the plurality of through holes are arranged at an eleventh pitch along the first direction and at a twelfth pitch in a second direction intersecting the first direction.
In the second region, the plurality of through holes are arranged along the first direction at a 21st pitch different from the 11th pitch, and the 22nd pitch is the same as the 12th pitch in the second direction. Thin-film masking equipment lined up at a pitch. The vapor deposition mask apparatus according to claim 1, wherein the 21st pitch of the plurality of through holes located in the second region is larger than the 11th pitch of the plurality of through holes located in the first region. The dimension of the through hole located in the second region in the first direction is larger than the dimension of the through hole located in the first region in the first direction, according to claim 1 or 2. Thin-film masking device. Any one of claims 1 to 3, wherein the plurality of through holes located in the first region and the plurality of the through holes located in the second region are arranged in a straight line along the first direction. The vapor deposition masking apparatus according to the item. The plurality of openings of the first mask are arranged along the first direction and the second direction.
The plurality of first regions of the second mask are arranged along the first direction and the second direction so as to overlap the opening of the first mask.
The second mask further comprises a third region located between the two adjacent first regions in the second direction.
The opening ratio of the third region is equivalent to the opening ratio of the first region and the opening ratio of the second region.
In the third region, the plurality of through holes are arranged along the first direction at the same 31st pitch as the 11th pitch, and the 32nd through hole is different from the 12th pitch in the second direction. The vapor deposition mask apparatus according to any one of claims 1 to 4, which are arranged in a pitch. The vapor deposition mask apparatus according to claim 5, wherein the 32nd pitch of the plurality of through holes located in the third region is larger than the 12th pitch of the plurality of through holes located in the first region. The dimension of the through hole located in the third region in the second direction is larger than the dimension of the through hole located in the first region in the second direction, according to claim 5 or 6. Thin-film masking device. Any one of claims 5 to 7, wherein the plurality of through holes located in the first region and the plurality of the through holes located in the third region are arranged in a straight line along the second direction. The vapor deposition masking apparatus according to the item. The second mask further comprises a fourth region located between the two adjacent third regions in the first direction.
The opening ratio of the fourth region is equivalent to the opening ratio of the first region, the opening ratio of the second region, and the opening ratio of the third region.
In the fourth region, the plurality of through holes are arranged along the first direction at the same 41st pitch as the 21st pitch, and the 42nd through hole is the same as the 32nd pitch in the second direction. The vapor deposition mask apparatus according to any one of claims 5 to 8, which are arranged in a pitch. The dimension of the through hole located in the fourth region in the first direction is larger than the dimension of the through hole located in the first region in the first direction.
The vapor deposition mask according to claim 9, wherein the dimension of the through hole located in the fourth region in the second direction is larger than the dimension of the through hole located in the first region in the second direction. apparatus. The plurality of the through holes located in the second region and the plurality of the through holes located in the fourth region are aligned in a straight line along the second direction.
The vapor deposition according to claim 9 or 10, wherein the plurality of through holes located in the third region and the plurality of the through holes located in the fourth region are arranged in a straight line along the first direction. Mask device. The vapor deposition mask apparatus according to claim 1, wherein the 21st pitch of the plurality of through holes located in the second region is smaller than the 11th pitch of the plurality of through holes located in the first region. The dimension of the through hole located in the second region in the first direction is smaller than the dimension of the through hole located in the first region in the first direction, according to claim 1 or 12. Thin-film masking device. A mask with multiple through holes formed
With at least a plurality of first regions arranged along the first direction,
A second region located between the two adjacent first regions in the first direction is provided.
The aperture ratio of the second region is equivalent to the aperture ratio of the first region.
In the first region, the plurality of through holes are arranged at an eleventh pitch along the first direction and at a twelfth pitch in a second direction intersecting the first direction.
In the second region, the plurality of through holes are arranged along the first direction at a 21st pitch different from the 11th pitch, and the 22nd pitch is the same as the 12th pitch in the second direction. Masks lined up on the pitch. The method for manufacturing a vapor deposition mask device according to any one of claims 1 to 13.
The process of preparing the base material and
A step that form on said substrate said second mask by plating
The step of fixing the second mask to the first mask and
A method for manufacturing a vapor deposition mask apparatus, comprising a step of peeling the second mask from the base material.

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