JP6864122B2 - レシピ最適化及び計測のためのゾーナル分析 - Google Patents

レシピ最適化及び計測のためのゾーナル分析 Download PDF

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JP6864122B2
JP6864122B2 JP2019564033A JP2019564033A JP6864122B2 JP 6864122 B2 JP6864122 B2 JP 6864122B2 JP 2019564033 A JP2019564033 A JP 2019564033A JP 2019564033 A JP2019564033 A JP 2019564033A JP 6864122 B2 JP6864122 B2 JP 6864122B2
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zonal analysis
analysis
wafer
zonal
setup
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Japanese (ja)
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JP2020522127A5 (enExample
JP2020522127A (ja
Inventor
ロイエ ヴォルコヴィチ
ロイエ ヴォルコヴィチ
ミカエル イー アデル
ミカエル イー アデル
リラン イェルシャルミ
リラン イェルシャルミ
エイタン ハーゼル
エイタン ハーゼル
メンメン イエ
メンメン イエ
エラン アミット
エラン アミット
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KLA Corp
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KLA Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D18/00—Testing or calibrating apparatus or arrangements provided for in groups G01D1/00 - G01D15/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2019564033A 2017-05-22 2017-12-11 レシピ最適化及び計測のためのゾーナル分析 Active JP6864122B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762509679P 2017-05-22 2017-05-22
US62/509,679 2017-05-22
PCT/US2017/065629 WO2018217232A1 (en) 2017-05-22 2017-12-11 Zonal analysis for recipe optimization and measurement

Publications (3)

Publication Number Publication Date
JP2020522127A JP2020522127A (ja) 2020-07-27
JP2020522127A5 JP2020522127A5 (enExample) 2021-01-28
JP6864122B2 true JP6864122B2 (ja) 2021-04-21

Family

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JP2019564033A Active JP6864122B2 (ja) 2017-05-22 2017-12-11 レシピ最適化及び計測のためのゾーナル分析

Country Status (7)

Country Link
US (1) US10763146B2 (enExample)
JP (1) JP6864122B2 (enExample)
KR (1) KR102301556B1 (enExample)
CN (1) CN110622287B (enExample)
DE (1) DE112017007576T5 (enExample)
TW (1) TWI768046B (enExample)
WO (1) WO2018217232A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10962951B2 (en) 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
US11249400B2 (en) 2018-12-14 2022-02-15 Kla Corporation Per-site residuals analysis for accurate metrology measurements
KR20230014360A (ko) 2021-07-21 2023-01-30 에스케이플래닛 주식회사 생산적 적대 신경망을 기반으로 하는 복합체 생산 레시피를 추론하기 위한 장치 및 이를 위한 방법
KR20230052529A (ko) 2021-10-13 2023-04-20 에스케이플래닛 주식회사 오토인코더 특성 추출을 통한 복합체 특성과 복합체 생산 조건을 상호 추론하기 위한 방법 및 이를 위한 장치
EP4538797A1 (en) * 2023-10-11 2025-04-16 ASML Netherlands B.V. Method of determining a sampling scheme and associated metrology method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7698012B2 (en) * 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7161669B2 (en) * 2005-05-06 2007-01-09 Kla- Tencor Technologies Corporation Wafer edge inspection
KR101565071B1 (ko) * 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
JP4996856B2 (ja) * 2006-01-23 2012-08-08 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7576851B2 (en) * 2006-03-30 2009-08-18 Tokyo Electron Limited Creating a library for measuring a damaged structure formed on a wafer using optical metrology
JP2008004863A (ja) * 2006-06-26 2008-01-10 Hitachi High-Technologies Corp 外観検査方法及びその装置
US8611639B2 (en) * 2007-07-30 2013-12-17 Kla-Tencor Technologies Corp Semiconductor device property extraction, generation, visualization, and monitoring methods
US8254661B2 (en) 2008-06-02 2012-08-28 Applied Materials Israel, Ltd. System and method for generating spatial signatures
JP2012150065A (ja) * 2011-01-21 2012-08-09 Hitachi High-Technologies Corp 回路パターン検査装置およびその検査方法
US9177370B2 (en) * 2012-03-12 2015-11-03 Kla-Tencor Corporation Systems and methods of advanced site-based nanotopography for wafer surface metrology
US9064823B2 (en) * 2013-03-13 2015-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for qualifying a semiconductor wafer for subsequent processing
CN112698551B (zh) * 2014-11-25 2024-04-23 科磊股份有限公司 分析及利用景观
US20180047646A1 (en) * 2016-02-24 2018-02-15 Kla-Tencor Corporation Accuracy improvements in optical metrology

Also Published As

Publication number Publication date
TWI768046B (zh) 2022-06-21
KR102301556B1 (ko) 2021-09-13
US10763146B2 (en) 2020-09-01
KR20200000447A (ko) 2020-01-02
WO2018217232A1 (en) 2018-11-29
TW201909011A (zh) 2019-03-01
CN110622287B (zh) 2023-11-03
DE112017007576T5 (de) 2020-03-05
US20190088514A1 (en) 2019-03-21
CN110622287A (zh) 2019-12-27
JP2020522127A (ja) 2020-07-27

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