KR102301556B1 - 레시피 최적화 및 측정을 위한 구역 분석 - Google Patents

레시피 최적화 및 측정을 위한 구역 분석 Download PDF

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KR102301556B1
KR102301556B1 KR1020197037472A KR20197037472A KR102301556B1 KR 102301556 B1 KR102301556 B1 KR 102301556B1 KR 1020197037472 A KR1020197037472 A KR 1020197037472A KR 20197037472 A KR20197037472 A KR 20197037472A KR 102301556 B1 KR102301556 B1 KR 102301556B1
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metrology
analysis
wafer
metric
parameter
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KR20200000447A (ko
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로이에 볼코비치
마이클 이. 아델
리란 예루살미
에이탄 헤르젤
멩멩 예
에란 아미트
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D18/00—Testing or calibrating apparatus or arrangements provided for in groups G01D1/00 - G01D15/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020197037472A 2017-05-22 2017-12-11 레시피 최적화 및 측정을 위한 구역 분석 Active KR102301556B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762509679P 2017-05-22 2017-05-22
US62/509,679 2017-05-22
PCT/US2017/065629 WO2018217232A1 (en) 2017-05-22 2017-12-11 Zonal analysis for recipe optimization and measurement

Publications (2)

Publication Number Publication Date
KR20200000447A KR20200000447A (ko) 2020-01-02
KR102301556B1 true KR102301556B1 (ko) 2021-09-13

Family

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KR1020197037472A Active KR102301556B1 (ko) 2017-05-22 2017-12-11 레시피 최적화 및 측정을 위한 구역 분석

Country Status (7)

Country Link
US (1) US10763146B2 (enExample)
JP (1) JP6864122B2 (enExample)
KR (1) KR102301556B1 (enExample)
CN (1) CN110622287B (enExample)
DE (1) DE112017007576T5 (enExample)
TW (1) TWI768046B (enExample)
WO (1) WO2018217232A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10962951B2 (en) 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
WO2020123014A1 (en) 2018-12-14 2020-06-18 Kla Corporation Per-site residuals analysis for accurate metrology measurements
KR20230014360A (ko) 2021-07-21 2023-01-30 에스케이플래닛 주식회사 생산적 적대 신경망을 기반으로 하는 복합체 생산 레시피를 추론하기 위한 장치 및 이를 위한 방법
KR20230052529A (ko) 2021-10-13 2023-04-20 에스케이플래닛 주식회사 오토인코더 특성 추출을 통한 복합체 특성과 복합체 생산 조건을 상호 추론하기 위한 방법 및 이를 위한 장치
EP4538797A1 (en) * 2023-10-11 2025-04-16 ASML Netherlands B.V. Method of determining a sampling scheme and associated metrology method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090037134A1 (en) 2007-07-30 2009-02-05 Ashok Kulkarni Semiconductor device property extraction, generation, visualization, and monitoring methods
JP2012150065A (ja) 2011-01-21 2012-08-09 Hitachi High-Technologies Corp 回路パターン検査装置およびその検査方法
US20140273291A1 (en) 2013-03-13 2014-09-18 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer Strength by Control of Uniformity of Edge Bulk Micro Defects

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US7698012B2 (en) * 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7161669B2 (en) * 2005-05-06 2007-01-09 Kla- Tencor Technologies Corporation Wafer edge inspection
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
EP1955225A4 (en) * 2005-11-18 2009-11-04 Kla Tencor Tech Corp METHOD AND SYSTEMS FOR USE OF DESIGN DATA IN COMBINATION WITH TEST DATA
JP4996856B2 (ja) * 2006-01-23 2012-08-08 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7576851B2 (en) * 2006-03-30 2009-08-18 Tokyo Electron Limited Creating a library for measuring a damaged structure formed on a wafer using optical metrology
JP2008004863A (ja) * 2006-06-26 2008-01-10 Hitachi High-Technologies Corp 外観検査方法及びその装置
US8254661B2 (en) 2008-06-02 2012-08-28 Applied Materials Israel, Ltd. System and method for generating spatial signatures
US9177370B2 (en) * 2012-03-12 2015-11-03 Kla-Tencor Corporation Systems and methods of advanced site-based nanotopography for wafer surface metrology
CN107078074B (zh) * 2014-11-25 2021-05-25 科磊股份有限公司 分析及利用景观
JP6979964B2 (ja) * 2016-02-24 2021-12-15 ケーエルエー コーポレイション 光学的計測における精度改良

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090037134A1 (en) 2007-07-30 2009-02-05 Ashok Kulkarni Semiconductor device property extraction, generation, visualization, and monitoring methods
JP2012150065A (ja) 2011-01-21 2012-08-09 Hitachi High-Technologies Corp 回路パターン検査装置およびその検査方法
US20140273291A1 (en) 2013-03-13 2014-09-18 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer Strength by Control of Uniformity of Edge Bulk Micro Defects

Also Published As

Publication number Publication date
DE112017007576T5 (de) 2020-03-05
TW201909011A (zh) 2019-03-01
WO2018217232A1 (en) 2018-11-29
CN110622287A (zh) 2019-12-27
JP6864122B2 (ja) 2021-04-21
CN110622287B (zh) 2023-11-03
US10763146B2 (en) 2020-09-01
US20190088514A1 (en) 2019-03-21
KR20200000447A (ko) 2020-01-02
JP2020522127A (ja) 2020-07-27
TWI768046B (zh) 2022-06-21

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