JP6826064B2 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
JP6826064B2
JP6826064B2 JP2018048682A JP2018048682A JP6826064B2 JP 6826064 B2 JP6826064 B2 JP 6826064B2 JP 2018048682 A JP2018048682 A JP 2018048682A JP 2018048682 A JP2018048682 A JP 2018048682A JP 6826064 B2 JP6826064 B2 JP 6826064B2
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JP
Japan
Prior art keywords
film forming
pipe
forming apparatus
exhaust
droplets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018048682A
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English (en)
Japanese (ja)
Other versions
JP2019161130A5 (enExample
JP2019161130A (ja
Inventor
慎哉 佐藤
慎哉 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2018048682A priority Critical patent/JP6826064B2/ja
Priority to US16/054,249 priority patent/US10844482B2/en
Publication of JP2019161130A publication Critical patent/JP2019161130A/ja
Publication of JP2019161130A5 publication Critical patent/JP2019161130A5/ja
Application granted granted Critical
Publication of JP6826064B2 publication Critical patent/JP6826064B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018048682A 2018-03-16 2018-03-16 成膜装置 Active JP6826064B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018048682A JP6826064B2 (ja) 2018-03-16 2018-03-16 成膜装置
US16/054,249 US10844482B2 (en) 2018-03-16 2018-08-03 Film forming apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018048682A JP6826064B2 (ja) 2018-03-16 2018-03-16 成膜装置

Publications (3)

Publication Number Publication Date
JP2019161130A JP2019161130A (ja) 2019-09-19
JP2019161130A5 JP2019161130A5 (enExample) 2020-03-05
JP6826064B2 true JP6826064B2 (ja) 2021-02-03

Family

ID=67904503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018048682A Active JP6826064B2 (ja) 2018-03-16 2018-03-16 成膜装置

Country Status (2)

Country Link
US (1) US10844482B2 (enExample)
JP (1) JP6826064B2 (enExample)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2668023B2 (ja) * 1990-02-05 1997-10-27 東京エレクトロン株式会社 熱処理装置
JP2845422B2 (ja) * 1994-06-03 1999-01-13 住友金属鉱山株式会社 プラズマｃｖｄ装置
JP3246708B2 (ja) * 1995-05-02 2002-01-15 東京エレクトロン株式会社 トラップ装置及びこれを用いた未反応処理ガス排気機構
JPH1116842A (ja) * 1997-06-25 1999-01-22 Hitachi Ltd 半導体製造装置における排気配管のドレン抜き装置
JP4092821B2 (ja) * 1999-07-27 2008-05-28 東京エレクトロン株式会社 処理装置の排気システム
JP4759916B2 (ja) 2002-12-13 2011-08-31 東京エレクトロン株式会社 処理装置
JP4914085B2 (ja) 2006-03-14 2012-04-11 株式会社日立国際電気 基板処理装置、排気トラップ装置及び半導体装置の製造方法
WO2008016143A1 (fr) 2006-08-04 2008-02-07 Hitachi Kokusai Electric Inc. Appareil de traitement de substrat et procédé de fabrication d'un dispositif semi-conducteur
JP6371738B2 (ja) * 2015-05-28 2018-08-08 株式会社東芝 成膜装置

Also Published As

Publication number Publication date
US20190284688A1 (en) 2019-09-19
JP2019161130A (ja) 2019-09-19
US10844482B2 (en) 2020-11-24

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