JP6820766B2 - ガス導入機構及び熱処理装置 - Google Patents

ガス導入機構及び熱処理装置 Download PDF

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Publication number
JP6820766B2
JP6820766B2 JP2017039197A JP2017039197A JP6820766B2 JP 6820766 B2 JP6820766 B2 JP 6820766B2 JP 2017039197 A JP2017039197 A JP 2017039197A JP 2017039197 A JP2017039197 A JP 2017039197A JP 6820766 B2 JP6820766 B2 JP 6820766B2
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Japan
Prior art keywords
injector
gas introduction
introduction mechanism
processing container
mechanism according
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Active
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JP2017039197A
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English (en)
Japanese (ja)
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JP2018145460A (ja
Inventor
朋幸 永田
朋幸 永田
庸之 岡部
庸之 岡部
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2017039197A priority Critical patent/JP6820766B2/ja
Priority to KR1020180022985A priority patent/KR102274966B1/ko
Priority to CN201810158626.3A priority patent/CN108538748B/zh
Publication of JP2018145460A publication Critical patent/JP2018145460A/ja
Application granted granted Critical
Publication of JP6820766B2 publication Critical patent/JP6820766B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Furnace Details (AREA)
JP2017039197A 2017-03-02 2017-03-02 ガス導入機構及び熱処理装置 Active JP6820766B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017039197A JP6820766B2 (ja) 2017-03-02 2017-03-02 ガス導入機構及び熱処理装置
KR1020180022985A KR102274966B1 (ko) 2017-03-02 2018-02-26 가스 도입 기구 및 열처리 장치
CN201810158626.3A CN108538748B (zh) 2017-03-02 2018-02-26 气体导入机构及热处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017039197A JP6820766B2 (ja) 2017-03-02 2017-03-02 ガス導入機構及び熱処理装置

Publications (2)

Publication Number Publication Date
JP2018145460A JP2018145460A (ja) 2018-09-20
JP6820766B2 true JP6820766B2 (ja) 2021-01-27

Family

ID=63485906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017039197A Active JP6820766B2 (ja) 2017-03-02 2017-03-02 ガス導入機構及び熱処理装置

Country Status (3)

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JP (1) JP6820766B2 (ko)
KR (1) KR102274966B1 (ko)
CN (1) CN108538748B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112530826B (zh) * 2020-11-27 2024-05-17 北京北方华创微电子装备有限公司 半导体热处理设备的承载装置及半导体热处理设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3436955B2 (ja) * 1993-10-18 2003-08-18 東京エレクトロン株式会社 熱処理装置
JP2001035187A (ja) * 1999-07-21 2001-02-09 Hitachi Ltd 半導体装置およびその冗長救済方法
JP2001351871A (ja) * 2000-06-09 2001-12-21 Asm Japan Kk 半導体製造装置
JP3538737B2 (ja) * 2002-03-20 2004-06-14 東京エレクトロン株式会社 管継手
JP5237133B2 (ja) * 2008-02-20 2013-07-17 株式会社日立国際電気 基板処理装置
JP4924676B2 (ja) * 2009-08-13 2012-04-25 東京エレクトロン株式会社 ガスポート構造及び処理装置
JP2012004408A (ja) * 2010-06-18 2012-01-05 Tokyo Electron Ltd 支持体構造及び処理装置
JP5545061B2 (ja) * 2010-06-18 2014-07-09 東京エレクトロン株式会社 処理装置及び成膜方法
JP6176732B2 (ja) 2014-03-20 2017-08-09 株式会社日立国際電気 ガス供給部、基板処理装置及び半導体装置の製造方法
JP2016176584A (ja) * 2015-03-23 2016-10-06 東京エレクトロン株式会社 ガス導入配管接続構造及びこれを用いた基板処理装置
WO2016194843A1 (ja) * 2015-05-29 2016-12-08 株式会社フジキン 管継手方法、管継手用部品、該部品を備える管継手、流体制御器、流体制御装置、及び半導体製造装置

Also Published As

Publication number Publication date
JP2018145460A (ja) 2018-09-20
KR20180101199A (ko) 2018-09-12
CN108538748A (zh) 2018-09-14
KR102274966B1 (ko) 2021-07-07
CN108538748B (zh) 2023-07-28

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