JP6811891B1 - 光センサモジュール - Google Patents
光センサモジュール Download PDFInfo
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- JP6811891B1 JP6811891B1 JP2020500672A JP2020500672A JP6811891B1 JP 6811891 B1 JP6811891 B1 JP 6811891B1 JP 2020500672 A JP2020500672 A JP 2020500672A JP 2020500672 A JP2020500672 A JP 2020500672A JP 6811891 B1 JP6811891 B1 JP 6811891B1
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- holding member
- lens holding
- sensor module
- optical sensor
- adhesive
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- 230000003287 optical effect Effects 0.000 title claims abstract description 84
- 239000000853 adhesive Substances 0.000 claims abstract description 124
- 230000001070 adhesive effect Effects 0.000 claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 230000003746 surface roughness Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 description 76
- 239000004593 Epoxy Substances 0.000 description 75
- 238000001514 detection method Methods 0.000 description 66
- 239000000463 material Substances 0.000 description 13
- 230000035882 stress Effects 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 229920002302 Nylon 6,6 Polymers 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 Polybutylene Polymers 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
- G02B7/025—Mountings, adjusting means, or light-tight connections, for optical elements for lenses using glue
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
図1は、実施の形態1による光センサモジュール101の概略構成示す平面図、図2は図1のA−A位置での断面図である。光センサモジュール101は、基本構成として、光検出素子としての赤外線検出素子10と、基板としてのガラスエポキシ基板20と、成型後にレンズ90が挿入されてレンズ90の周囲を樹脂でかしめて固定することでレンズ90と一体となったレンズ保持部材80とを有している。ガラスエポキシ基板20の一表面に赤外線検出素子10がAgペースト60によって固着されて、レンズ保持部材80の内部に固定され、収納されている。レンズ保持部材80には赤外線を透過して集光するためのレンズ90が一体となって固定されており、レンズ保持部材80の底面84は接着剤70によってガラスエポキシ基板20に接着されている。
図11は実施の形態2による光センサモジュール102の概略構成を示す平面図、図12は図11のA−A位置での断面図である。本実施の形態2による光センサモジュール102も基本的に実施の形態1における光センサモジュール101と同じ構成を有するが、以下の点で相違する。ここでは、主に相違点について説明を行い、同じ構成部分についてはその説明を省略する。なお、図11および図12は光センサモジュール102における基本的な構成部分のみを図示する模式図であり、その他の構成部分については説明を省略する。
図13は実施の形態3による光センサモジュール103の概略構成を示す平面図、図14は図13のA−A位置での断面図である。本実施の形態3による光センサモジュール103も基本的に実施の形態1による光センサモジュール101と同じ構造を有するが、以下の点で相違する。ここでは、主に相違点について説明を行い、同じ構成部分についてはその説明を省略する。なお、図13および図14は光センサモジュール103における基本的な構成部分のみを図示する模式図であり、その他の構成部分については説明を省略する。
Claims (8)
- 表面に電極パターンが形成された基板と、
前記電極パターンに電気接続されるとともに、前記基板に固定された、光を検出する光検出素子と、
レンズが固定され、前記光検出素子を取り囲む位置で前記基板に接着剤で接着されたレンズ保持部材と、を備えた光センサモジュールにおいて、
前記基板に接着される前記レンズ保持部材の底面は分散配置された、先端に面を有するとともに、先端の面粗さが、前記レンズ保持部材の他の表面の面粗さよりも粗い突起を有し、前記突起の先端が前記基板と接していることを特徴とする光センサモジュール。 - 前記突起の形状は柱状であることを特徴とする請求項1に記載の光センサモジュール。
- 前記突起の、前記底面に平行な断面における断面積は、先端が底部よりも狭く、前記接着剤が前記底面から濡れ広がっていることを特徴とする請求項1に記載の光センサモジュール。
- 前記突起の形状は円錐台または角錐台であることを特徴とする請求項3に記載の光センサモジュール。
- 前記突起の角部が丸められていることを特徴とする請求項2または4に記載の光センサモジュール。
- 前記突起の先端から突き出す位置決め突起を有し、この位置決め突起が前記基板に設けられた位置決め孔に挿入されていることを特徴とする請求項2、4、5のいずれか1項に記載の光センサモジュール。
- 前記突起を3個以上有することを特徴とする請求項1から6のいずれか1項に記載の光センサモジュール。
- 前記光検出素子の光入射側が、光透過部材を含む部材で真空封止されていることを特徴とする請求項1から7のいずれか1項に記載の光センサモジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/031373 WO2021024453A1 (ja) | 2019-08-08 | 2019-08-08 | 光センサモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6811891B1 true JP6811891B1 (ja) | 2021-01-13 |
JPWO2021024453A1 JPWO2021024453A1 (ja) | 2021-09-13 |
Family
ID=74096247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020500672A Active JP6811891B1 (ja) | 2019-08-08 | 2019-08-08 | 光センサモジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220236512A1 (ja) |
JP (1) | JP6811891B1 (ja) |
CN (1) | CN114207844A (ja) |
WO (1) | WO2021024453A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP1699604S (ja) * | 2021-01-28 | 2021-11-15 | ||
JP1699605S (ja) * | 2021-01-28 | 2021-11-15 | ||
JP1699606S (ja) * | 2021-01-28 | 2021-11-15 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000125212A (ja) * | 1998-08-10 | 2000-04-28 | Olympus Optical Co Ltd | 撮像モジュ―ル |
JP2001281053A (ja) * | 2000-03-31 | 2001-10-10 | Sumitomo Electric Ind Ltd | セラミックス赤外線センサー |
JP2004286835A (ja) * | 2003-03-19 | 2004-10-14 | Ngk Spark Plug Co Ltd | 光学素子搭載装置及びその製造方法、光学素子搭載装置付き配線基板 |
US20060243896A1 (en) * | 2005-04-29 | 2006-11-02 | Po-Hung Chen | Packaging structure of a light-sensing element and fabrication method thereof |
JP2007142425A (ja) * | 2005-11-22 | 2007-06-07 | Palo Alto Research Center Inc | 集積化ハイブリッドマイクロレンズアレイを有するフォトニックデバイス |
WO2008023827A1 (fr) * | 2006-08-25 | 2008-02-28 | Sanyo Electric Co., Ltd. | Dispositif semi-conducteur |
KR20100099874A (ko) * | 2009-03-04 | 2010-09-15 | 삼성전기주식회사 | 카메라 모듈 |
JP2011174762A (ja) * | 2010-02-23 | 2011-09-08 | Panasonic Electric Works Co Ltd | 赤外線センサモジュール |
JP2013246397A (ja) * | 2012-05-29 | 2013-12-09 | Auto Network Gijutsu Kenkyusho:Kk | 光ユニットおよび光ユニットの製造方法 |
JP2014150098A (ja) * | 2013-01-31 | 2014-08-21 | Mitsubishi Electric Corp | 半導体光装置 |
JP2016213412A (ja) * | 2015-05-13 | 2016-12-15 | 株式会社リコー | 光学装置及び光照射装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590429A (ja) * | 1991-09-27 | 1993-04-09 | Nec Corp | 半導体装置 |
DE10163799B4 (de) * | 2000-12-28 | 2006-11-23 | Matsushita Electric Works, Ltd., Kadoma | Halbleiterchip-Aufbausubstrat und Verfahren zum Herstellen eines solchen Aufbausubstrates |
-
2019
- 2019-08-08 CN CN201980098646.9A patent/CN114207844A/zh active Pending
- 2019-08-08 WO PCT/JP2019/031373 patent/WO2021024453A1/ja active Application Filing
- 2019-08-08 US US17/615,166 patent/US20220236512A1/en active Pending
- 2019-08-08 JP JP2020500672A patent/JP6811891B1/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000125212A (ja) * | 1998-08-10 | 2000-04-28 | Olympus Optical Co Ltd | 撮像モジュ―ル |
JP2001281053A (ja) * | 2000-03-31 | 2001-10-10 | Sumitomo Electric Ind Ltd | セラミックス赤外線センサー |
JP2004286835A (ja) * | 2003-03-19 | 2004-10-14 | Ngk Spark Plug Co Ltd | 光学素子搭載装置及びその製造方法、光学素子搭載装置付き配線基板 |
US20060243896A1 (en) * | 2005-04-29 | 2006-11-02 | Po-Hung Chen | Packaging structure of a light-sensing element and fabrication method thereof |
JP2007142425A (ja) * | 2005-11-22 | 2007-06-07 | Palo Alto Research Center Inc | 集積化ハイブリッドマイクロレンズアレイを有するフォトニックデバイス |
WO2008023827A1 (fr) * | 2006-08-25 | 2008-02-28 | Sanyo Electric Co., Ltd. | Dispositif semi-conducteur |
KR20100099874A (ko) * | 2009-03-04 | 2010-09-15 | 삼성전기주식회사 | 카메라 모듈 |
JP2011174762A (ja) * | 2010-02-23 | 2011-09-08 | Panasonic Electric Works Co Ltd | 赤外線センサモジュール |
JP2013246397A (ja) * | 2012-05-29 | 2013-12-09 | Auto Network Gijutsu Kenkyusho:Kk | 光ユニットおよび光ユニットの製造方法 |
JP2014150098A (ja) * | 2013-01-31 | 2014-08-21 | Mitsubishi Electric Corp | 半導体光装置 |
JP2016213412A (ja) * | 2015-05-13 | 2016-12-15 | 株式会社リコー | 光学装置及び光照射装置 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2021024453A1 (ja) | 2021-09-13 |
US20220236512A1 (en) | 2022-07-28 |
WO2021024453A1 (ja) | 2021-02-11 |
CN114207844A (zh) | 2022-03-18 |
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