JP6808665B2 - 表示装置製造用フォトマスク、及び表示装置の製造方法 - Google Patents

表示装置製造用フォトマスク、及び表示装置の製造方法 Download PDF

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Publication number
JP6808665B2
JP6808665B2 JP2018012734A JP2018012734A JP6808665B2 JP 6808665 B2 JP6808665 B2 JP 6808665B2 JP 2018012734 A JP2018012734 A JP 2018012734A JP 2018012734 A JP2018012734 A JP 2018012734A JP 6808665 B2 JP6808665 B2 JP 6808665B2
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JP
Japan
Prior art keywords
pattern
main
photomask
main pattern
auxiliary
Prior art date
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Active
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JP2018012734A
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English (en)
Japanese (ja)
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JP2018151618A (ja
Inventor
修久 今敷
修久 今敷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
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Hoya Corp
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Publication date
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Publication of JP2018151618A publication Critical patent/JP2018151618A/ja
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Publication of JP6808665B2 publication Critical patent/JP6808665B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2018012734A 2017-03-10 2018-01-29 表示装置製造用フォトマスク、及び表示装置の製造方法 Active JP6808665B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017046175 2017-03-10
JP2017046175 2017-03-10

Related Child Applications (1)

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JP2020203848A Division JP2021047449A (ja) 2017-03-10 2020-12-09 表示装置製造用フォトマスク、及び表示装置の製造方法

Publications (2)

Publication Number Publication Date
JP2018151618A JP2018151618A (ja) 2018-09-27
JP6808665B2 true JP6808665B2 (ja) 2021-01-06

Family

ID=63625803

Family Applications (2)

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JP2018012734A Active JP6808665B2 (ja) 2017-03-10 2018-01-29 表示装置製造用フォトマスク、及び表示装置の製造方法
JP2020203848A Pending JP2021047449A (ja) 2017-03-10 2020-12-09 表示装置製造用フォトマスク、及び表示装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2020203848A Pending JP2021047449A (ja) 2017-03-10 2020-12-09 表示装置製造用フォトマスク、及び表示装置の製造方法

Country Status (4)

Country Link
JP (2) JP6808665B2 (zh)
KR (2) KR102209088B1 (zh)
CN (2) CN116500854A (zh)
TW (2) TWI721247B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7383490B2 (ja) * 2020-01-07 2023-11-20 株式会社エスケーエレクトロニクス フォトマスク
CN113260178B (zh) * 2021-06-16 2021-09-28 广东科翔电子科技股份有限公司 一种刚挠结合板高精密线路的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257232B2 (ja) * 1994-02-16 2002-02-18 ソニー株式会社 位相シフトマスク
JP3577363B2 (ja) * 1994-06-29 2004-10-13 株式会社ルネサステクノロジ 半導体装置の製造方法
US6022644A (en) * 1998-03-18 2000-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Mask containing subresolution line to minimize proximity effect of contact hole
US20020172796A1 (en) * 2001-05-18 2002-11-21 Ronnie Magee Multi-patterned floor covering sample element
JPWO2004012260A1 (ja) * 2002-07-30 2005-11-24 株式会社タムラ製作所 精密加工用ステージ装置
JP3746497B2 (ja) * 2003-06-24 2006-02-15 松下電器産業株式会社 フォトマスク
JP2006338057A (ja) * 2006-09-25 2006-12-14 Matsushita Electric Ind Co Ltd フォトマスク
KR20090045493A (ko) * 2007-11-02 2009-05-08 주식회사 동부하이텍 반도체 소자 제조용 마스크 및 이를 이용한 반도체 소자의제조 방법과, 상기 마스크 및 제조 방법에 의해 제조되는반도체 소자
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP6022644B2 (ja) * 2015-07-14 2016-11-09 株式会社タイトー ゲーム機

Also Published As

Publication number Publication date
KR102245531B1 (ko) 2021-04-29
TW201843523A (zh) 2018-12-16
CN116500854A (zh) 2023-07-28
CN108594594B (zh) 2023-05-02
KR20180103743A (ko) 2018-09-19
TW202129402A (zh) 2021-08-01
TWI721247B (zh) 2021-03-11
TWI777402B (zh) 2022-09-11
JP2021047449A (ja) 2021-03-25
CN108594594A (zh) 2018-09-28
JP2018151618A (ja) 2018-09-27
KR102209088B1 (ko) 2021-01-28
KR20210011481A (ko) 2021-02-01

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