JP6803296B2 - 露光装置および基板処理装置 - Google Patents
露光装置および基板処理装置 Download PDFInfo
- Publication number
- JP6803296B2 JP6803296B2 JP2017105673A JP2017105673A JP6803296B2 JP 6803296 B2 JP6803296 B2 JP 6803296B2 JP 2017105673 A JP2017105673 A JP 2017105673A JP 2017105673 A JP2017105673 A JP 2017105673A JP 6803296 B2 JP6803296 B2 JP 6803296B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- unit
- support
- processing chamber
- elevating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 242
- 238000012545 processing Methods 0.000 title claims description 158
- 230000007246 mechanism Effects 0.000 claims description 96
- 230000003028 elevating effect Effects 0.000 claims description 80
- 238000001816 cooling Methods 0.000 claims description 57
- 238000010438 heat treatment Methods 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 230000001939 inductive effect Effects 0.000 claims description 8
- 230000008093 supporting effect Effects 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 4
- 230000005571 horizontal transmission Effects 0.000 claims description 4
- 230000000284 resting effect Effects 0.000 claims 8
- 238000000034 method Methods 0.000 description 34
- 230000008569 process Effects 0.000 description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 30
- 239000001301 oxygen Substances 0.000 description 30
- 229910052760 oxygen Inorganic materials 0.000 description 30
- 238000002408 directed self-assembly Methods 0.000 description 23
- 238000012546 transfer Methods 0.000 description 21
- 229920000642 polymer Polymers 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 238000011161 development Methods 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 11
- 230000033001 locomotion Effects 0.000 description 9
- 230000032258 transport Effects 0.000 description 9
- 230000001976 improved effect Effects 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229920001400 block copolymer Polymers 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920005590 poly(ferrocenyl dimethylsilane) Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920002717 polyvinylpyridine Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017105673A JP6803296B2 (ja) | 2017-05-29 | 2017-05-29 | 露光装置および基板処理装置 |
PCT/JP2018/017408 WO2018221115A1 (ja) | 2017-05-29 | 2018-05-01 | 露光装置および基板処理装置 |
TW107115851A TWI666525B (zh) | 2017-05-29 | 2018-05-10 | 曝光裝置及基板處理裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017105673A JP6803296B2 (ja) | 2017-05-29 | 2017-05-29 | 露光装置および基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018200420A JP2018200420A (ja) | 2018-12-20 |
JP6803296B2 true JP6803296B2 (ja) | 2020-12-23 |
Family
ID=64454569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017105673A Active JP6803296B2 (ja) | 2017-05-29 | 2017-05-29 | 露光装置および基板処理装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6803296B2 (zh) |
TW (1) | TWI666525B (zh) |
WO (1) | WO2018221115A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI747490B (zh) | 2019-09-19 | 2021-11-21 | 日商斯庫林集團股份有限公司 | 曝光裝置 |
JP7295755B2 (ja) * | 2019-09-19 | 2023-06-21 | 株式会社Screenホールディングス | 基板処理装置 |
KR102359376B1 (ko) * | 2020-06-03 | 2022-02-08 | 한국고요써모시스템(주) | 기판의 열처리 오븐 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3356354B2 (ja) * | 1994-05-30 | 2002-12-16 | 東京エレクトロン株式会社 | 処理装置 |
JP3028462B2 (ja) * | 1995-05-12 | 2000-04-04 | 東京エレクトロン株式会社 | 熱処理装置 |
JP3823027B2 (ja) * | 2001-01-31 | 2006-09-20 | 東京エレクトロン株式会社 | 基板処理装置 |
JP3892327B2 (ja) * | 2002-03-28 | 2007-03-14 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP5484373B2 (ja) * | 2011-02-14 | 2014-05-07 | 東京エレクトロン株式会社 | パターン形成方法 |
US9669984B2 (en) * | 2011-07-22 | 2017-06-06 | Asml Holding N.V. | Lithographic apparatus and device manufacturing method |
JP5890255B2 (ja) * | 2012-04-02 | 2016-03-22 | 株式会社Screenセミコンダクターソリューションズ | 露光装置、基板処理装置、基板の露光方法および基板処理方法 |
CN108336011B (zh) * | 2012-11-30 | 2022-08-02 | 株式会社尼康 | 搬入方法、搬送系统及曝光装置、和器件制造方法 |
CN106255924B (zh) * | 2014-05-06 | 2019-12-10 | Asml荷兰有限公司 | 衬底支座、用于在衬底支撑位置上加载衬底的方法、光刻设备和器件制造方法 |
NL2017433A (en) * | 2015-10-09 | 2017-04-11 | Asml Netherlands Bv | Substrate table and lithographic apparatus |
-
2017
- 2017-05-29 JP JP2017105673A patent/JP6803296B2/ja active Active
-
2018
- 2018-05-01 WO PCT/JP2018/017408 patent/WO2018221115A1/ja active Application Filing
- 2018-05-10 TW TW107115851A patent/TWI666525B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2018221115A1 (ja) | 2018-12-06 |
TW201901307A (zh) | 2019-01-01 |
JP2018200420A (ja) | 2018-12-20 |
TWI666525B (zh) | 2019-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101922260B1 (ko) | 노광 장치, 기판 처리 장치, 기판의 노광 방법 및 기판 처리 방법 | |
KR101764534B1 (ko) | 노광 장치, 기판 처리 장치, 기판의 노광 방법 및 기판 처리 방법 | |
JP6803296B2 (ja) | 露光装置および基板処理装置 | |
TWI706226B (zh) | 曝光裝置、基板處理裝置、基板之曝光方法及基板處理方法 | |
KR20160115775A (ko) | 노광 장치 및 기판 처리 장치 | |
TWI659275B (zh) | 曝光裝置、基板處理裝置、曝光方法、及基板處理方法 | |
JP6845058B2 (ja) | 露光装置、基板処理装置、基板の露光方法および基板処理方法 | |
WO2018190273A1 (ja) | 露光装置、基板処理装置、基板の露光方法および基板処理方法 | |
JP6768561B2 (ja) | 露光装置、基板処理装置、基板の露光方法および基板処理方法 | |
JP6872385B2 (ja) | 露光装置、基板処理装置、基板の露光方法および基板処理方法 | |
JP6924661B2 (ja) | 露光装置、基板処理装置、露光方法および基板処理方法 | |
JP2019057641A (ja) | 露光装置、基板処理装置、露光方法および基板処理方法 | |
JP7295754B2 (ja) | 露光装置 | |
JP2007311469A (ja) | 基板の処理方法、プログラム及び基板処理システム | |
JP2012220896A (ja) | 周辺露光方法及び周辺露光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191223 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200630 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200814 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201104 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201130 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6803296 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |