JP6802011B2 - 厚み計測装置 - Google Patents

厚み計測装置 Download PDF

Info

Publication number
JP6802011B2
JP6802011B2 JP2016171391A JP2016171391A JP6802011B2 JP 6802011 B2 JP6802011 B2 JP 6802011B2 JP 2016171391 A JP2016171391 A JP 2016171391A JP 2016171391 A JP2016171391 A JP 2016171391A JP 6802011 B2 JP6802011 B2 JP 6802011B2
Authority
JP
Japan
Prior art keywords
light
thickness
wafer
optical fiber
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016171391A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018036212A (ja
Inventor
圭司 能丸
圭司 能丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2016171391A priority Critical patent/JP6802011B2/ja
Priority to TW106125670A priority patent/TWI730149B/zh
Priority to CN201710748596.7A priority patent/CN107796313B/zh
Priority to KR1020170111202A priority patent/KR102257259B1/ko
Publication of JP2018036212A publication Critical patent/JP2018036212A/ja
Application granted granted Critical
Publication of JP6802011B2 publication Critical patent/JP6802011B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/02012—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal intensity variation
    • G01B9/02014—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal intensity variation by using pulsed light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2016171391A 2016-09-02 2016-09-02 厚み計測装置 Active JP6802011B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016171391A JP6802011B2 (ja) 2016-09-02 2016-09-02 厚み計測装置
TW106125670A TWI730149B (zh) 2016-09-02 2017-07-31 厚度測量裝置
CN201710748596.7A CN107796313B (zh) 2016-09-02 2017-08-28 厚度测量装置
KR1020170111202A KR102257259B1 (ko) 2016-09-02 2017-08-31 두께 계측 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016171391A JP6802011B2 (ja) 2016-09-02 2016-09-02 厚み計測装置

Publications (2)

Publication Number Publication Date
JP2018036212A JP2018036212A (ja) 2018-03-08
JP6802011B2 true JP6802011B2 (ja) 2020-12-16

Family

ID=61531641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016171391A Active JP6802011B2 (ja) 2016-09-02 2016-09-02 厚み計測装置

Country Status (4)

Country Link
JP (1) JP6802011B2 (zh)
KR (1) KR102257259B1 (zh)
CN (1) CN107796313B (zh)
TW (1) TWI730149B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6402273B1 (ja) * 2018-05-18 2018-10-10 大塚電子株式会社 光学測定装置及び光学測定方法
JP7210200B2 (ja) * 2018-09-21 2023-01-23 株式会社ディスコ 厚み計測装置、及び厚み計測装置を備えた研削装置
JP7103906B2 (ja) * 2018-09-28 2022-07-20 株式会社ディスコ 厚み計測装置
JP7481090B2 (ja) * 2019-01-09 2024-05-10 株式会社ディスコ 厚み計測装置、及び厚み計測装置を備えた加工装置
JP7210367B2 (ja) * 2019-04-23 2023-01-23 株式会社ディスコ 厚み計測装置、及び厚み計測装置を備えた加工装置
CN110640618B (zh) * 2019-09-26 2024-05-17 中国科学院上海光学精密机械研究所 一种抛光模修盘周期的检测装置及检测方法
JP7378894B2 (ja) * 2019-11-06 2023-11-14 株式会社ディスコ 加工装置
GB2612507B (en) * 2020-07-06 2024-06-19 Laser Inst Of Shandong Academy Of Science Multi-wavelength laser for synchronously monitoring temperature and pressure of ocean
CN113340421B (zh) * 2021-07-05 2023-02-28 西安交通大学 一种基于光纤端面Fizeau干涉的全光纤微型光谱仪
CN113251936A (zh) * 2021-07-09 2021-08-13 成都太科光电技术有限责任公司 立式半导体晶圆ttv干涉测试装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04313007A (ja) * 1991-04-08 1992-11-05 Mitsubishi Electric Corp 膜検査装置
JP3321982B2 (ja) * 1994-05-12 2002-09-09 日産自動車株式会社 塗装膜厚計測装置
JP3491337B2 (ja) * 1994-05-13 2004-01-26 株式会社デンソー 半導体厚非接触測定装置
GB2301884A (en) * 1995-06-06 1996-12-18 Holtronic Technologies Ltd Characterising multilayer thin film systems by interferometry
WO2002091116A2 (en) * 2001-05-04 2002-11-14 Quantronix Corporation Apparatus and method for measuring intensity and phase of a light pulse with an interferometric asymmetric single-shot autocorrelator
JP2006064852A (ja) * 2004-08-25 2006-03-09 Kansai Electric Power Co Inc:The 分散補償器
JP4529891B2 (ja) * 2005-12-14 2010-08-25 沖電気工業株式会社 光変調回路及び光変調方法
CN100593688C (zh) * 2008-10-20 2010-03-10 重庆工学院 一种光纤布拉格光栅传感器在线测量微生物膜厚度的方法
JP2010158686A (ja) * 2009-01-06 2010-07-22 Disco Abrasive Syst Ltd レーザ加工用光学装置、レーザ加工装置およびレーザ加工方法
JP5443180B2 (ja) * 2010-01-13 2014-03-19 株式会社ディスコ 厚み検出装置および研削機
JP5752961B2 (ja) * 2011-03-11 2015-07-22 株式会社ディスコ 計測装置
CN102607720B (zh) * 2012-03-02 2014-07-16 北京航空航天大学 一种测量光程的方法和系统
DE102015205555A1 (de) * 2014-03-26 2015-10-01 Laytec Ag Verfahren und Vorrichtung zur Bestimmung einer Schichteigenschaft sowie Verfahren zum Herstellen einer LED
JP6430790B2 (ja) * 2014-11-25 2018-11-28 株式会社ディスコ レーザー加工装置
CN105044035B (zh) * 2015-07-03 2017-09-05 南京航空航天大学 基于谱域干涉仪的折射率和厚度同步测量方法与系统

Also Published As

Publication number Publication date
CN107796313A (zh) 2018-03-13
KR20180026344A (ko) 2018-03-12
JP2018036212A (ja) 2018-03-08
CN107796313B (zh) 2021-06-01
KR102257259B1 (ko) 2021-05-26
TWI730149B (zh) 2021-06-11
TW201812249A (zh) 2018-04-01

Similar Documents

Publication Publication Date Title
JP6802011B2 (ja) 厚み計測装置
JP6802012B2 (ja) 計測装置
JP5752961B2 (ja) 計測装置
JP5443180B2 (ja) 厚み検出装置および研削機
KR102305384B1 (ko) 두께 계측 장치
JP6762834B2 (ja) 計測装置
TWI834725B (zh) 厚度計測裝置、及具備厚度計測裝置之研削裝置
KR20200036739A (ko) 두께 계측 장치
KR102309389B1 (ko) 계측 장치
CN111380471B (zh) 厚度测量装置
JP2012132776A (ja) 計測装置
TWI843904B (zh) 厚度計測裝置
TW202117830A (zh) 厚度計測裝置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190725

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200317

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200508

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201126

R150 Certificate of patent or registration of utility model

Ref document number: 6802011

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250