JP2018036212A - 厚み計測装置 - Google Patents
厚み計測装置 Download PDFInfo
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- JP2018036212A JP2018036212A JP2016171391A JP2016171391A JP2018036212A JP 2018036212 A JP2018036212 A JP 2018036212A JP 2016171391 A JP2016171391 A JP 2016171391A JP 2016171391 A JP2016171391 A JP 2016171391A JP 2018036212 A JP2018036212 A JP 2018036212A
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- light
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- 239000013307 optical fiber Substances 0.000 claims abstract description 54
- 230000003595 spectral effect Effects 0.000 claims abstract description 37
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 238000005259 measurement Methods 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 20
- 239000000835 fiber Substances 0.000 claims description 16
- 230000007246 mechanism Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
- G01B9/02012—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal intensity variation
- G01B9/02014—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal intensity variation by using pulsed light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
以下、制御手段20が上述した分光干渉波形に基づいて実行する波形解析に基づき、ウエーハ10の厚みを算出する例について説明する。
2:装置ハウジング
3:研削ユニット
4:スピンドルユニット
5:研削ホイール
7:チャックテーブル機構
8:厚み計測装置
10:ウエーハ
80:計測ハウジング
81:測定端子
82:パルスブロードバンド光源
83:ファイバーブラッググレーティング
83a:光ファイバー伝達手段
84:光分岐手段
85:受光素子
k1〜k17:回析格子
f1〜f4:光ファイバー
Claims (1)
- 板状物の厚みを計測する厚み計測装置であって、
板状物に対して透過性を有する波長域の光をパルス光で発するパルスブロードバンド光源と、
該パルスブロードバンド光源が発したパルス光を伝達し伝達距離に応じて異なる波長にパルス光を分光して逆行させるファイバーブラッググレーティングと、
該ファイバーブラッググレーティングに配設され逆行したパルス光を分岐し光ファイバーに伝達する光ファイバー伝達手段と、
該光ファイバーの端面に配設されパルス光を板状物に集光する対物レンズを備えた測定端子と、
該板状物の上面で反射したパルス光と該板状物を透過し下面で反射したパルス光とが干渉し該光ファイバーを逆行した戻り光を分岐する光分岐手段と、
該光分岐手段で分岐した戻り光の1パルスにおける時間差から波長を求め各波長の光の強度を検出して1パルスにおける分光干渉波形を生成する分光干渉波形生成手段と、
該分光干渉波形生成手段が生成した分光干渉波形を波形解析して板状物の厚みを算出する厚み算出手段と、
から少なくとも構成される厚み計測装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016171391A JP6802011B2 (ja) | 2016-09-02 | 2016-09-02 | 厚み計測装置 |
TW106125670A TWI730149B (zh) | 2016-09-02 | 2017-07-31 | 厚度測量裝置 |
CN201710748596.7A CN107796313B (zh) | 2016-09-02 | 2017-08-28 | 厚度测量装置 |
KR1020170111202A KR102257259B1 (ko) | 2016-09-02 | 2017-08-31 | 두께 계측 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016171391A JP6802011B2 (ja) | 2016-09-02 | 2016-09-02 | 厚み計測装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018036212A true JP2018036212A (ja) | 2018-03-08 |
JP6802011B2 JP6802011B2 (ja) | 2020-12-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016171391A Active JP6802011B2 (ja) | 2016-09-02 | 2016-09-02 | 厚み計測装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6802011B2 (ja) |
KR (1) | KR102257259B1 (ja) |
CN (1) | CN107796313B (ja) |
TW (1) | TWI730149B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020046410A (ja) * | 2018-09-21 | 2020-03-26 | 株式会社ディスコ | 厚み計測装置、及び厚み計測装置を備えた研削装置 |
KR20200036739A (ko) | 2018-09-28 | 2020-04-07 | 가부시기가이샤 디스코 | 두께 계측 장치 |
JP2020112381A (ja) * | 2019-01-09 | 2020-07-27 | 株式会社ディスコ | 厚み計測装置、及び厚み計測装置を備えた加工装置 |
JP2021074804A (ja) * | 2019-11-06 | 2021-05-20 | 株式会社ディスコ | 加工装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6402273B1 (ja) * | 2018-05-18 | 2018-10-10 | 大塚電子株式会社 | 光学測定装置及び光学測定方法 |
JP7210367B2 (ja) * | 2019-04-23 | 2023-01-23 | 株式会社ディスコ | 厚み計測装置、及び厚み計測装置を備えた加工装置 |
CN110640618B (zh) * | 2019-09-26 | 2024-05-17 | 中国科学院上海光学精密机械研究所 | 一种抛光模修盘周期的检测装置及检测方法 |
US20230288272A1 (en) * | 2020-07-06 | 2023-09-14 | Laser Institute of Shandong Academy of Science | Multi-wavelength laser for synchronously monitoring temperature and pressure of ocean |
CN113340421B (zh) * | 2021-07-05 | 2023-02-28 | 西安交通大学 | 一种基于光纤端面Fizeau干涉的全光纤微型光谱仪 |
CN113251936A (zh) * | 2021-07-09 | 2021-08-13 | 成都太科光电技术有限责任公司 | 立式半导体晶圆ttv干涉测试装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07306018A (ja) * | 1994-05-13 | 1995-11-21 | Nippondenso Co Ltd | 半導体厚非接触測定装置およびその測定方法 |
JP2006064852A (ja) * | 2004-08-25 | 2006-03-09 | Kansai Electric Power Co Inc:The | 分散補償器 |
JP2007166268A (ja) * | 2005-12-14 | 2007-06-28 | Oki Electric Ind Co Ltd | 光変調回路及び光変調方法 |
JP2010158686A (ja) * | 2009-01-06 | 2010-07-22 | Disco Abrasive Syst Ltd | レーザ加工用光学装置、レーザ加工装置およびレーザ加工方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04313007A (ja) * | 1991-04-08 | 1992-11-05 | Mitsubishi Electric Corp | 膜検査装置 |
JP3321982B2 (ja) * | 1994-05-12 | 2002-09-09 | 日産自動車株式会社 | 塗装膜厚計測装置 |
GB2301884A (en) * | 1995-06-06 | 1996-12-18 | Holtronic Technologies Ltd | Characterising multilayer thin film systems by interferometry |
AU2002340711A1 (en) * | 2001-05-04 | 2002-11-18 | Quantronix Corporation | Apparatus and method for measuring intensity and phase of a light pulse with an interferometric asymmetric single-shot autocorrelator |
CN100593688C (zh) * | 2008-10-20 | 2010-03-10 | 重庆工学院 | 一种光纤布拉格光栅传感器在线测量微生物膜厚度的方法 |
JP5443180B2 (ja) * | 2010-01-13 | 2014-03-19 | 株式会社ディスコ | 厚み検出装置および研削機 |
JP5752961B2 (ja) * | 2011-03-11 | 2015-07-22 | 株式会社ディスコ | 計測装置 |
CN102607720B (zh) * | 2012-03-02 | 2014-07-16 | 北京航空航天大学 | 一种测量光程的方法和系统 |
DE102015205555A1 (de) * | 2014-03-26 | 2015-10-01 | Laytec Ag | Verfahren und Vorrichtung zur Bestimmung einer Schichteigenschaft sowie Verfahren zum Herstellen einer LED |
JP6430790B2 (ja) * | 2014-11-25 | 2018-11-28 | 株式会社ディスコ | レーザー加工装置 |
CN105044035B (zh) * | 2015-07-03 | 2017-09-05 | 南京航空航天大学 | 基于谱域干涉仪的折射率和厚度同步测量方法与系统 |
-
2016
- 2016-09-02 JP JP2016171391A patent/JP6802011B2/ja active Active
-
2017
- 2017-07-31 TW TW106125670A patent/TWI730149B/zh active
- 2017-08-28 CN CN201710748596.7A patent/CN107796313B/zh active Active
- 2017-08-31 KR KR1020170111202A patent/KR102257259B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07306018A (ja) * | 1994-05-13 | 1995-11-21 | Nippondenso Co Ltd | 半導体厚非接触測定装置およびその測定方法 |
JP2006064852A (ja) * | 2004-08-25 | 2006-03-09 | Kansai Electric Power Co Inc:The | 分散補償器 |
JP2007166268A (ja) * | 2005-12-14 | 2007-06-28 | Oki Electric Ind Co Ltd | 光変調回路及び光変調方法 |
JP2010158686A (ja) * | 2009-01-06 | 2010-07-22 | Disco Abrasive Syst Ltd | レーザ加工用光学装置、レーザ加工装置およびレーザ加工方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200034592A (ko) | 2018-09-21 | 2020-03-31 | 가부시기가이샤 디스코 | 두께 계측 장치, 및 두께 계측 장치를 구비한 연삭 장치 |
JP2020046410A (ja) * | 2018-09-21 | 2020-03-26 | 株式会社ディスコ | 厚み計測装置、及び厚み計測装置を備えた研削装置 |
DE102019214896B4 (de) | 2018-09-28 | 2022-12-08 | Disco Corporation | Dickenmessvorrichtung |
KR20200036739A (ko) | 2018-09-28 | 2020-04-07 | 가부시기가이샤 디스코 | 두께 계측 장치 |
JP2020056579A (ja) * | 2018-09-28 | 2020-04-09 | 株式会社ディスコ | 厚み計測装置 |
TWI830782B (zh) * | 2018-09-28 | 2024-02-01 | 日商迪思科股份有限公司 | 厚度測量裝置 |
US10890433B2 (en) | 2018-09-28 | 2021-01-12 | Disco Corporation | Interferometric thickness measuring apparatus using multiple light sources coupled with a selecting means |
JP7103906B2 (ja) | 2018-09-28 | 2022-07-20 | 株式会社ディスコ | 厚み計測装置 |
DE102020200116B4 (de) | 2019-01-09 | 2023-07-27 | Disco Corporation | Dickenmessvorrichtung |
JP2020112381A (ja) * | 2019-01-09 | 2020-07-27 | 株式会社ディスコ | 厚み計測装置、及び厚み計測装置を備えた加工装置 |
TWI844611B (zh) * | 2019-01-09 | 2024-06-11 | 日商迪思科股份有限公司 | 厚度測量裝置 |
JP2021074804A (ja) * | 2019-11-06 | 2021-05-20 | 株式会社ディスコ | 加工装置 |
JP7378894B2 (ja) | 2019-11-06 | 2023-11-14 | 株式会社ディスコ | 加工装置 |
Also Published As
Publication number | Publication date |
---|---|
KR102257259B1 (ko) | 2021-05-26 |
KR20180026344A (ko) | 2018-03-12 |
CN107796313B (zh) | 2021-06-01 |
JP6802011B2 (ja) | 2020-12-16 |
CN107796313A (zh) | 2018-03-13 |
TW201812249A (zh) | 2018-04-01 |
TWI730149B (zh) | 2021-06-11 |
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