JP6801089B2 - めっき処理方法、めっき処理システム及び記憶媒体 - Google Patents
めっき処理方法、めっき処理システム及び記憶媒体 Download PDFInfo
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- JP6801089B2 JP6801089B2 JP2019509656A JP2019509656A JP6801089B2 JP 6801089 B2 JP6801089 B2 JP 6801089B2 JP 2019509656 A JP2019509656 A JP 2019509656A JP 2019509656 A JP2019509656 A JP 2019509656A JP 6801089 B2 JP6801089 B2 JP 6801089B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Description
まず、前洗浄処理として、SC1洗浄処理、続いてリンス処理を行い、これにより、基板表面のパーティクル、有機系汚染物質等を除去する。前洗浄処理は、図2に概略的に構成を示したスピナー(回転式液処理装置)40を用いて行うことができる。具体的には、前洗浄処理は、図2に示すように、スピンチャック41により基板2を水平姿勢に保持して鉛直軸線周りに回転させ、この回転する基板2の表面中央部に向けてノズル42からSC1液を所定時間供給し、その後、ノズル42からリンス液例えばDIWを所定時間供給することにより行うことができる。
次に、Nを含む官能基を有しないシラン系の自己組織化単分子膜(SAM)の層6(以下、「SAM層」と記す)を基板2の表面に形成するSAM形成処理が行われる(図1B参照)。SAM層6の形成にあたって、SAM層形成用の薬剤が、基板2の表面に供給される。SAM層形成用の薬剤としては、シランカップリング剤と呼ばれる薬剤あるいはこれに類する分子構造を有する薬剤を用いることができる。ここでは、SAM層形成用の薬剤として、信越化学工業株式会社から商業的に入手可能なアルコキシシラン系薬剤である商品名「KBE−3033」を用いることができる。KBE−3033の化学名はn−プロピルトリエトキシシラン、構造式は(C2H5O)3Si(CH2)2CH3である。この薬剤は、Nを有する官能基を含んでおらず、3つのO−エトキシ基(基板2の表面への結合に関与する基)の反対側に、一般式CXHY(具体的には(CH2)2-CH3)で示される官能基を有している。
次に、金属触媒粒子としてのPdナノ粒子(Pd−NPs)と、Pdナノ粒子を被覆する分散剤としてのポリビニルピロリドン(PVP)を溶媒中に分散させてなるPdナノコロイド溶液、すなわち触媒粒子溶液を基板2に供給して、触媒付与処理を行う。
次に、リンス処理を行う。このリンス処理は、触媒付与処理の後、引き続きスピンチャック41により基板2を保持して回転させ、この回転する基板2の表面中央部に向けてノズルからリンス液としての純水(DIW)を吐出することにより行うことができる。リンス処理後にベーク処理を行ってもよい。
次に、無電解めっきにより、銅(Cu)、タングステン(W)、コバルト(Co)、ニッケル(Ni)またはその合金からなるめっき層8を形成する。このめっき処理は、図2に概略的に示した構成を有するめっき処理部としてのスピナー40を用い、スピンチャック41により基板2を水平姿勢に保持して鉛直軸線周りに回転させ、この回転する基板2の表面中央部に向けてノズルからめっき液を吐出することにより行うことができる。
(1)金属層であるTiSi層4へのSAM材の結合力は、SiN層5へのSAM材の結合力よりも弱い。このため、触媒含有液またはリンス液が基板2に供給されるときに、液の流れによる物理的な力によりTiSi層4上のSAM材が除去されやすい。
(2)金属層であるTiSi層4の表面は、酸性またはアルカリ性に調整される触媒含有液により侵され、これに伴い、TiSi層4の表面に一旦付着したSAM材がTiSi層4から除去される。一方で、SiN層5の表面は酸性またはアルカリ性に調整される触媒含有液により侵されることはないため、SiN層5上のSAM材は触媒含有液を基板2に供給した後でもSiN層5上に残留する。
4 第2部分(TiSi層)
5 窒素を含むシリコン化合物からなる第1部分(SiN層)
6 自己組織化単分子膜(SAM層)
7 触媒(触媒粒子含有層)
8 めっき(めっき層)
Claims (8)
- 表面に、窒素を含むシリコン化合物からなる第1部分と、前記第1部分とは異なる材料からなる第2部分とを有する基板を準備する工程と、
前記基板の表面にSAM(自己組織化単分子膜)を形成するSAM形成工程と、
前記SAMが形成された前記基板に触媒含有液を供給して、前記基板に触媒を付与する触媒付与工程と、
前記触媒が付与された前記基板にめっきを施すめっき工程と、
を備え、
前記SAM形成工程は、窒素を含む官能基を有しないSAM形成用の薬剤を前記基板に供給することにより行われる、めっき処理方法。 - 前記第2部分は導電性材料からなる、請求項1記載のめっき処理方法。
- 窒素を含む前記シリコン化合物が、SiN、SiCN、SiONまたはSiOCNであり、前記導電性材料が、TiSi、TiN、Si、またはB若しくはPでドープされたSiである、請求項2記載のめっき処理方法。
- 前記触媒含有液は酸性である、請求項1記載のめっき処理方法。
- 前記触媒付与工程の後であって前記めっき工程の前に、前記基板の表面にリンス液を供給するリンス工程をさらに備えた、請求項1記載のめっき処理方法。
- 前記SAM形成工程は、前記SAM形成用の薬剤として薬液を前記基板に供給した後に、前記基板を非酸化性雰囲気でベークすることにより行われる、請求項1記載のめっき処理方法。
- めっき処理システムの動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記めっき処理システムを制御して請求項1記載のめっき処理方法を実行させるプログラムが記録された記憶媒体。
- めっき処理システムであって、
窒素を含む官能基を有しないSAM形成用の薬剤を、表面に、窒素を含むシリコン化合物からなる第1部分と、前記第1部分とは異なる材料からなる第2部分とを有する基板に供給することにより、前記基板の表面にSAM(自己組織化単分子膜)を形成するSAM形成部と、
前記SAMが形成された前記基板に触媒液を供給して、前記基板に触媒を付与する触媒付与部と、
前記触媒が付与された前記基板にめっきを施すめっき処理部と、
を備えためっき処理システム。
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