JP6799601B2 - Oledデバイスの製造に使用される真空システムを洗浄するための方法、oledデバイスを製造するための基板の上での真空堆積のための方法、及びoledデバイスを製造するための基板の上での真空堆積のための装置 - Google Patents
Oledデバイスの製造に使用される真空システムを洗浄するための方法、oledデバイスを製造するための基板の上での真空堆積のための方法、及びoledデバイスを製造するための基板の上での真空堆積のための装置 Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title claims description 153
- 238000000034 method Methods 0.000 title claims description 77
- 239000000758 substrate Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 238000000151 deposition Methods 0.000 title claims description 31
- 238000001771 vacuum deposition Methods 0.000 title claims description 17
- 230000008021 deposition Effects 0.000 title description 25
- 238000012545 processing Methods 0.000 claims description 25
- 239000011368 organic material Substances 0.000 claims description 19
- 238000012546 transfer Methods 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 238000012423 maintenance Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 4
- 210000002381 plasma Anatomy 0.000 description 61
- 239000010410 layer Substances 0.000 description 17
- 239000000969 carrier Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000000977 initiatory effect Effects 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 238000005339 levitation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2209/00—Details of machines or methods for cleaning hollow articles
- B08B2209/08—Details of machines or methods for cleaning containers, e.g. tanks
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (15)
- OLEDデバイスの製造に使用される真空システムを洗浄するための方法であって、
前記真空システムの少なくとも一部を洗浄するための事前洗浄を実行することと、
遠隔プラズマ源を使用してプラズマ洗浄を実行することと
を含み、
前記プラズマ洗浄が、アルゴンとの酸素混合物のプラズマを使用し、前記事前洗浄が、湿式化学洗浄プロセスを含む、方法。 - OLEDデバイスの製造に使用される真空システムを洗浄するための方法であって、
前記真空システムの少なくとも一部を洗浄するための事前洗浄を実行することと、
遠隔プラズマ源を使用してプラズマ洗浄を実行することと
を含み、
前記プラズマ洗浄が、アルゴンとの酸素混合物のプラズマを使用し、前記プラズマ洗浄が、真空下で実行され、前記事前洗浄が、大気下で実行される、方法。 - 前記プラズマ洗浄が、前記真空システムを操作する前の最終洗浄手順である、請求項1又は2に記載の方法。
- 前記プラズマ洗浄が、真空チャンバの洗浄を含む、請求項1から3の何れか一項に記載の方法。
- 前記プラズマ洗浄が、前記真空チャンバの一又は複数の内壁の洗浄を含む、請求項4に記載の方法。
- 前記プラズマ洗浄が、前記真空システムの真空チャンバ内部の構成要素の洗浄を含む、請求項1から5の何れか一項に記載の方法。
- 前記構成要素は、機械的構成要素、移動可能な構成要素、駆動装置、バルブ、及びこれらの任意の組み合わせから成る群から選択される、請求項6に記載の方法。
- 前記プラズマ洗浄が、堆積プロセス中に使用される一又は複数のマスクデバイスの洗浄を含む、請求項1から7の何れか一項に記載の方法。
- 前記真空システム又は前記真空システムの一部の保守手順の後に実行される、請求項1から8の何れか一項に記載の方法。
- 前記プラズマ洗浄が、ロードロックチャンバ、洗浄チャンバ、真空堆積チャンバ、真空処理チャンバ、移送チャンバ、ルーティングモジュール、及びこれらの任意の組み合わせから成る群から選択される前記真空システムの一又は複数のチャンバ内で実行される、請求項1から9の何れか一項に記載の方法。
- 前記事前洗浄が湿式化学洗浄プロセスを含む、請求項2から10の何れか一項に記載の方法。
- 前記事前洗浄が大気下で実行され、前記プラズマ洗浄が真空下で実行される、請求項1及び3から10の何れか一項に記載の方法。
- OLEDデバイスを製造するための基板の上での真空堆積のための方法であって、
真空システムの少なくとも一部を洗浄するための事前洗浄を実行することと、
遠隔プラズマ源を使用して前記真空システムの少なくとも前記一部を洗浄するためのプラズマ洗浄を実行することと、
有機材料の一又は複数の層を基板の上に堆積させることと
を含み、
前記プラズマ洗浄が、アルゴンとの酸素混合物のプラズマを使用し、前記事前洗浄が、湿式化学洗浄プロセスを含む、方法。 - OLEDデバイスを製造するための基板の上での真空堆積のための方法であって、
真空システムの少なくとも一部を洗浄するための事前洗浄を実行することと、
遠隔プラズマ源を使用して前記真空システムの少なくとも前記一部を洗浄するためのプラズマ洗浄を実行することと、
有機材料の一又は複数の層を基板の上に堆積させることと
を含み、
前記プラズマ洗浄が、アルゴンとの酸素混合物のプラズマを使用し、前記プラズマ洗浄が、真空下で実行され、前記事前洗浄が、大気下で実行される、方法。 - OLEDデバイスを製造するための基板の上での真空堆積のための装置であって、
真空チャンバと、
前記真空チャンバに結合された遠隔プラズマ源と、
最終的な洗浄手順としてプラズマ洗浄を実行するための前記遠隔プラズマ源に結合されたコントローラと
を含み、
前記プラズマ洗浄が、アルゴンとの酸素混合物のプラズマを使用し、前記コントローラが、請求項1から14の何れか一項に記載の方法を実施するように構成されている、装置。
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JP2020191332A JP7404217B2 (ja) | 2017-04-28 | 2020-11-18 | Oledデバイスの製造に使用される真空システムを洗浄するための方法、oledデバイスを製造するための基板の上での真空堆積のための方法、及びoledデバイスを製造するための基板の上での真空堆積のための装置 |
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PCT/EP2017/060239 WO2018197008A1 (en) | 2017-04-28 | 2017-04-28 | Method for cleaning a vacuum system used in the manufacture of oled devices, method for vacuum deposition on a substrate to manufacture oled devices, and apparatus for vacuum deposition on a substrate to manufacture oled devices |
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JP2020191332A Division JP7404217B2 (ja) | 2017-04-28 | 2020-11-18 | Oledデバイスの製造に使用される真空システムを洗浄するための方法、oledデバイスを製造するための基板の上での真空堆積のための方法、及びoledデバイスを製造するための基板の上での真空堆積のための装置 |
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JP (1) | JP6799601B2 (ja) |
KR (5) | KR20220028180A (ja) |
CN (2) | CN109154077A (ja) |
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DE102018220677A1 (de) * | 2018-11-30 | 2020-06-04 | Siemens Aktiengesellschaft | Vorrichtung zum Beschichten eines Bauelements sowie Reinigungseinrichtung und Verfahren zum Reinigen einer Beschichtungseinrichtung zum Beschichten wenigstens eines Bauelements |
KR20210121131A (ko) * | 2019-01-30 | 2021-10-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 시스템을 세정하기 위한 방법, 기판의 진공 프로세싱을 위한 방법, 및 기판을 진공 프로세싱하기 위한 장치 |
JP7239688B2 (ja) | 2019-01-30 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 減圧システムを洗浄するための方法、基板の減圧処理のための方法、及び基板を減圧処理するための装置 |
WO2020164686A1 (en) * | 2019-02-12 | 2020-08-20 | Applied Materials, Inc. | Method for cleaning a vacuum system, method for vacuum processing of a substrate, and apparatus for vacuum processing a substrate |
CN110184571A (zh) * | 2019-05-07 | 2019-08-30 | 天津君盛天成科技发展有限公司 | 高功率脉冲涂装方法 |
CN114555854A (zh) * | 2019-11-11 | 2022-05-27 | 韩商则舒穆公司 | 用于制造oled的掩模以及oled制造方法 |
US11854773B2 (en) | 2020-03-31 | 2023-12-26 | Applied Materials, Inc. | Remote plasma cleaning of chambers for electronics manufacturing systems |
KR20230009500A (ko) * | 2020-05-26 | 2023-01-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 챔버를 세정하기 위한 방법, 기판의 진공 프로세싱을 위한 방법 및 기판을 진공 프로세싱하기 위한 장치 |
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JP2644912B2 (ja) * | 1990-08-29 | 1997-08-25 | 株式会社日立製作所 | 真空処理装置及びその運転方法 |
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US20210308725A1 (en) | 2021-10-07 |
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WO2018197008A1 (en) | 2018-11-01 |
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