JP6771057B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- General Chemical & Material Sciences (AREA)
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Description
100:基板処理装置
110:外部チューブ
120:反応チューブ
125:フランジ部
130:基板ボート
131:ロッド
141:工程ガス供給部
142:原料ガス供給部
143:第1反応ガス供給部
144:第2反応ガス供給部
145:希釈ガス供給部
146:上部希釈ガス供給部
147:下部希釈ガス供給部
150:排気ダクト
160:ペデスタル
161:熱遮断板
162:支持棒
163:上板
164:下板
165:側面カバー
170:排気ポート
180:ヒータ部
190:チャンバ
190a: 上チャンバ
190b:下チャンバ
191:シャフト
192:昇降駆動部
193:回転駆動部
194:支持板
194a:封止部材
194b:軸受け部材
195:嵌合口
200:搬送チャンバ
210:流入口
250:ゲート弁
Claims (10)
- 内部空間が形成される反応チューブと、
複数枚の基板を多段に積載して前記内部空間に配置され、前記複数枚の基板がそれぞれ処理される複数の処理空間を仕切る基板ボートと、
前記複数の処理空間に工程ガスを供給する工程ガス供給部と、
前記工程ガスを前記各処理空間内において希釈する希釈ガスを供給する希釈ガス供給部と、
を備え、
前記基板ボートの上段部と下段部とにはそれぞれ、前記複数枚の基板よりも小さい表面積を有するダミー基板が積載され、
前記複数の処理空間は、前記基板ボートの上段部と下段部との間に設けられると共に、前記複数枚の基板の積載方向に沿って、上部処理空間、中部処理空間及び下部処理空間にそれぞれ仕切られ、
前記希釈ガス供給部は、
前記上部処理空間に対応して上部希釈ガス供給孔が形成され、前記複数枚の基板の積載方向に沿って上下に延設される第1垂直部を有する上部希釈ガス供給部と、
前記下部処理空間に対応して下部希釈ガス供給孔が形成され、前記複数枚の基板の積載方向に沿って上下に延設される第2垂直部を有する下部希釈ガス供給部と、
を備え、
前記希釈ガスは、前記上部希釈ガス供給部及び前記下部希釈ガス供給部を介して前記上部処理空間及び前記下部処理空間に前記工程ガスとは異なる経路で供給される基板処理装置。 - 前記工程ガス供給部と対向するように配置され、前記複数枚の基板の積載方向に沿って上下に延設される排気ダクトと、
前記排気ダクトの下段と連通する排気ポートと、
を更に備え、
前記工程ガス供給部は、前記複数枚の基板の積載方向に沿って上下に延設され、
前記工程ガスは、前記工程ガス供給部の下端から上端へと流動して前記複数の処理空間をそれぞれ経た後、前記排気ダクトの上端から下端へと流動して前記排気ポートを介して排気される請求項1に記載の基板処理装置。 - 前記希釈ガス供給部は、前記工程ガスの供給方向に対して基板の上において互いに交差する方向に前記希釈ガスを供給する請求項1に記載の基板処理装置。
- 前記希釈ガス供給部と連結され、前記希釈ガス供給部から供給される希釈ガスの供給量を調節する制御部を更に備え、
前記制御部は、前記下部希釈ガス供給部から供給される希釈ガスの供給量が前記上部希釈ガス供給部から供給される希釈ガスの供給量よりも多くなるように調節する請求項1に記載の基板処理装置。 - 前記反応チューブの外部に前記複数枚の基板の積載方向に沿って設けられ、前記複数の処理空間を加熱するヒータ部を更に備え、
前記ヒータ部は、前記上部処理空間及び下部処理空間を前記中部処理空間よりも低い温度に加熱する請求項1に記載の基板処理装置。 - 多段に配置された複数の処理空間に複数枚の基板をそれぞれ配置するステップと、
前記複数の処理空間に工程ガスを供給して、前記複数枚の基板の上に薄膜を成膜するステップと、
を含み、
前記薄膜を成膜するステップは、
前記工程ガスを前記各処理空間内において希釈する希釈ガスを供給するステップを含み、
前記複数の処理空間は、基板ボートにより仕切られ、
前記基板ボートの上段部と下段部とにはそれぞれ、前記複数枚の基板よりも小さい表面積を有するダミー基板が積載され、
前記複数の処理空間は、前記基板ボートの上段部と下段部との間に設けられると共に、前記複数枚の基板の積載方向に沿って、上部処理空間、中部処理空間及び下部処理空間にそれぞれ仕切られ、
前記希釈ガスを供給するステップは、
前記上部処理空間に対応して上部希釈ガス供給孔が形成され、前記複数枚の基板の積載方向に沿って上下に延設される第1垂直部を有する上部希釈ガス供給部と、
前記下部処理空間に対応して下部希釈ガス供給孔が形成され、前記複数枚の基板の積載方向に沿って上下に延設される第2垂直部を有する下部希釈ガス供給部と、
を介して、前記上部処理空間及び前記下部処理空間に前記希釈ガスを前記工程ガスとは異なる経路で供給する基板処理方法。 - 前記薄膜を成膜するステップは、
前記複数の処理空間に原料ガスを供給するステップと、
前記複数の処理空間に残留する原料ガスをパージするステップと、
前記複数の処理空間に反応ガスを供給するステップと、
前記複数の処理空間に残留する反応ガスをパージするステップと、
を更に含み、
前記希釈ガスを供給するステップは、少なくとも前記原料ガスを供給するステップと共に行われる請求項6に記載の基板処理方法。 - 前記原料ガスをパージするステップ及び前記反応ガスをパージするステップにおいて、
前記複数の処理空間を排気する間に、前記複数の処理空間へのパージガスの供給及び停止を複数回繰り返し行う請求項7に記載の基板処理方法。 - 前記希釈ガス及びパージガスは、それぞれ前記原料ガス及び反応ガスに対して化学的に安定しているガスを含み、
前記希釈ガスを供給するステップは、
前記希釈ガスを前記パージガスとは異なる経路で処理空間に供給する請求項8に記載の基板処理方法。 - 前記反応ガスを供給するステップは、
前記複数の処理空間に第1反応ガスと第2反応ガスとを同時に供給するステップと、
前記複数の処理空間に第2反応ガスを単独で供給するステップと、
を含む請求項7に記載の基板処理方法。
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Application Number | Priority Date | Filing Date | Title |
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KR1020180042857A KR102034766B1 (ko) | 2018-04-12 | 2018-04-12 | 기판 처리 장치 및 기판 처리 방법 |
KR10-2018-0042857 | 2018-04-12 |
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JPH03255618A (ja) * | 1990-03-05 | 1991-11-14 | Fujitsu Ltd | 縦型cvd装置 |
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JP2005142355A (ja) * | 2003-11-06 | 2005-06-02 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
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