JP6765395B2 - 光モジュールユニット及びレーザ装置 - Google Patents
光モジュールユニット及びレーザ装置 Download PDFInfo
- Publication number
- JP6765395B2 JP6765395B2 JP2018113309A JP2018113309A JP6765395B2 JP 6765395 B2 JP6765395 B2 JP 6765395B2 JP 2018113309 A JP2018113309 A JP 2018113309A JP 2018113309 A JP2018113309 A JP 2018113309A JP 6765395 B2 JP6765395 B2 JP 6765395B2
- Authority
- JP
- Japan
- Prior art keywords
- flow path
- optical
- optical module
- sub
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims description 238
- 239000013307 optical fiber Substances 0.000 claims description 97
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000009434 installation Methods 0.000 claims description 13
- 239000002826 coolant Substances 0.000 description 38
- 230000003321 amplification Effects 0.000 description 27
- 238000003199 nucleic acid amplification method Methods 0.000 description 27
- 230000005284 excitation Effects 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 238000001816 cooling Methods 0.000 description 13
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052769 Ytterbium Inorganic materials 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/06729—Peculiar transverse fibre profile
- H01S3/06733—Fibre having more than one cladding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094049—Guiding of the pump light
- H01S3/094053—Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
Description
図1は、本発明の第1実施形態に係るレーザ装置の構成を示す図である。図1に示すように、本実施形態のレーザ装置1は、励起光源2、光コンバイナ3、増幅用光ファイバ5、増幅用光ファイバ5の一方側に接続される光ファイバ4、光ファイバ4に設けられる第1FBG(Fiber Bragg Grating)7、増幅用光ファイバ5の他方側に接続される光ファイバ6、及び、光ファイバ6に設けられる第2FBG8を主な構成として備えるファイバレーザ装置である。また、レーザ装置1において、増幅用光ファイバ5、第1FBG7、及び、第2FBG8によって共振器が構成される。
次に、本発明の第2実施形態について図12を参照して詳細に説明する。なお、第1実施形態と同一又は同等の構成要素については、特に説明する場合を除き、同一の参照符号を付して重複する説明は省略する。
2・・・励起光源
5・・・増幅用光ファイバ
10・・・光モジュールユニット
20・・・光モジュール
24・・・マウント
24s・・・素子配置面
25・・・サブ流路
31・・・レーザダイオード(発光素子)
40・・・マニホールド
41・・・第1メイン流路(メイン流路)
45・・・第2メイン流路(メイン流路)
Claims (10)
- 複数の発光素子と、一方の面側に前記複数の発光素子が配置されるマウントと、前記マウントに形成されるサブ流路と、を有する複数の光モジュール、及び、
前記複数の光モジュールが固定され、それぞれの前記光モジュールが有する前記サブ流路の一方の端部が並列に接続される第1メイン流路を有するマニホールド
を備え、
それぞれの前記光モジュールは、前記複数の発光素子が出射する光を外部に導出する光ファイバを有し、
それぞれの前記光モジュールの前記光ファイバが配置される面と対向する面が前記マニホールドに固定される
ことを特徴とする光モジュールユニット。 - 互いに隣り合う前記光モジュールが互いに離間している
ことを特徴とする請求項1に記載の光モジュールユニット。 - 複数の発光素子と、一方の面側に前記複数の発光素子が配置されるマウントと、前記マウントに形成されるサブ流路と、を有する複数の光モジュール、及び、
前記複数の光モジュールが固定され、それぞれの前記光モジュールが有する前記サブ流路の一方の端部が並列に接続される第1メイン流路を有するマニホールド
を備え、
互いに隣り合う前記光モジュールが互いに離間している
ことを特徴とする光モジュールユニット。 - それぞれの前記サブ流路の他方の端部が並列に接続される第2メイン流路を更に備える
ことを特徴とする請求項1から3のいずれか1項に記載の光モジュールユニット。 - 前記第2メイン流路が前記マニホールドに形成される
ことを特徴とする請求項4に記載の光モジュールユニット。 - 前記マウントは互いに平行な複数の素子配置面を有し、
前記複数の発光素子はそれぞれの前記素子配置面上に配置され、
前記サブ流路は、前記サブ流路が前記素子配置面に平行に形成される場合よりもそれぞれの前記発光素子と前記サブ流路との最短距離の平均が小さくなるように、前記素子配置面に対して傾斜して形成される
ことを特徴とする請求項1から5のいずれか1項に記載の光モジュールユニット。 - 前記複数の発光素子のうち少なくとも一部の前記発光素子は、前記発光素子の設置面に対して垂直な方向において前記サブ流路の中心軸と重ならない位置に配置される
ことを特徴とする請求項1から6のいずれか1項に記載の光モジュールユニット。 - それぞれの前記光モジュールが有する前記サブ流路は、前記光モジュールが前記マニホールドに固定される面側において前記第1メイン流路に接続される
ことを特徴とする請求項1から7のいずれかに記載の光モジュールユニット。 - 請求項1から8のいずれか1項に記載の光モジュールユニットと、
前記光モジュールユニットが出射する光が伝播する光ファイバと、
を備える
ことを特徴とするレーザ装置。 - 複数の前記光モジュールは、前記発光素子が出射する光のファスト軸と平行な方向に並列され、
それぞれの前記光モジュールの外周面のうち複数の前記光モジュールの並列方向に非垂直な面が固定部材に固定される
ことを特徴とする請求項9に記載のレーザ装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018113309A JP6765395B2 (ja) | 2018-06-14 | 2018-06-14 | 光モジュールユニット及びレーザ装置 |
PCT/JP2019/023290 WO2019240172A1 (ja) | 2018-06-14 | 2019-06-12 | 光モジュールユニット及びレーザ装置 |
US17/251,684 US12095220B2 (en) | 2018-06-14 | 2019-06-12 | Optical module unit and laser device |
CN201980028103.XA CN112020802B (zh) | 2018-06-14 | 2019-06-12 | 光模块单元和激光装置 |
EP19820463.8A EP3809542B1 (en) | 2018-06-14 | 2019-06-12 | Optical module unit and laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018113309A JP6765395B2 (ja) | 2018-06-14 | 2018-06-14 | 光モジュールユニット及びレーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019216204A JP2019216204A (ja) | 2019-12-19 |
JP6765395B2 true JP6765395B2 (ja) | 2020-10-07 |
Family
ID=68841963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018113309A Active JP6765395B2 (ja) | 2018-06-14 | 2018-06-14 | 光モジュールユニット及びレーザ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US12095220B2 (ja) |
EP (1) | EP3809542B1 (ja) |
JP (1) | JP6765395B2 (ja) |
CN (1) | CN112020802B (ja) |
WO (1) | WO2019240172A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7269201B2 (ja) * | 2020-08-07 | 2023-05-08 | 古河電気工業株式会社 | 発光装置、光源装置、および光ファイバレーザ |
WO2022220174A1 (ja) * | 2021-04-13 | 2022-10-20 | 三菱電機株式会社 | 半導体レーザモジュールおよびレーザ加工装置 |
WO2022220173A1 (ja) * | 2021-04-13 | 2022-10-20 | 三菱電機株式会社 | 半導体レーザモジュールおよびレーザ加工装置 |
DE112022004281T5 (de) * | 2021-08-30 | 2024-08-01 | Mitsubishi Electric Corporation | Halbleiterlasermodul und Laserbearbeitungsvorrichtung |
WO2024177048A1 (ja) * | 2023-02-20 | 2024-08-29 | ヌヴォトンテクノロジージャパン株式会社 | 光源モジュール |
CN116169556B (zh) * | 2023-04-21 | 2023-07-04 | 深圳市星汉激光科技股份有限公司 | 一种阶梯设计的光纤耦合半导体激光器及焊接设备 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5327444A (en) | 1989-04-20 | 1994-07-05 | Massachusetts Institute Of Technology | Solid state waveguide lasers |
US5105429A (en) | 1990-07-06 | 1992-04-14 | The United States Of America As Represented By The Department Of Energy | Modular package for cooling a laser diode array |
US5900967A (en) | 1996-12-12 | 1999-05-04 | Trw Inc. | Laser diode mounting technique to evenly deposit energy |
US6240116B1 (en) | 1997-08-14 | 2001-05-29 | Sdl, Inc. | Laser diode array assemblies with optimized brightness conservation |
JP4167209B2 (ja) * | 2004-08-12 | 2008-10-15 | 浜松ホトニクス株式会社 | レーザ装置 |
US20070115617A1 (en) | 2005-11-22 | 2007-05-24 | Nlight Photonics Corporation | Modular assembly utilizing laser diode subassemblies with winged mounting blocks |
US8242595B2 (en) * | 2007-08-10 | 2012-08-14 | Panasonic Electric Works SUNX Co., Ltd. | Heatsink and semiconductor device with heatsink |
JP4407764B2 (ja) * | 2007-08-10 | 2010-02-03 | パナソニック電工株式会社 | ヒートシンクおよびヒートシンクを備えた半導体装置 |
JP2012089584A (ja) | 2010-10-15 | 2012-05-10 | Hamamatsu Photonics Kk | 半導体レーザ装置 |
US9083140B2 (en) * | 2011-03-10 | 2015-07-14 | Coherent, Inc. | High-power CW fiber-laser |
JP2016054279A (ja) * | 2014-09-04 | 2016-04-14 | カナレ電気株式会社 | 半導体レーザ |
US10170892B2 (en) * | 2015-06-19 | 2019-01-01 | Amada Miyachi Co., Ltd. | Laser unit and laser device |
US9413136B1 (en) | 2015-07-08 | 2016-08-09 | Trumpf Photonics, Inc. | Stepped diode laser module with cooling structure |
CN109314363B (zh) * | 2016-04-26 | 2020-09-11 | 恩耐公司 | 低尺寸和重量、高功率光纤激光泵 |
US9972975B2 (en) | 2016-08-05 | 2018-05-15 | TeraDiode, Inc. | High-power laser systems with modular diode sources |
US10234645B2 (en) | 2016-09-14 | 2019-03-19 | Technology Research Association For Future Additive Manufacturing | Semiconductor laser module and three-dimensional laminating and shaping apparatus |
JP7504702B2 (ja) * | 2020-08-03 | 2024-06-24 | 株式会社フジクラ | 半導体レーザ装置及びレーザ装置 |
-
2018
- 2018-06-14 JP JP2018113309A patent/JP6765395B2/ja active Active
-
2019
- 2019-06-12 WO PCT/JP2019/023290 patent/WO2019240172A1/ja unknown
- 2019-06-12 EP EP19820463.8A patent/EP3809542B1/en active Active
- 2019-06-12 US US17/251,684 patent/US12095220B2/en active Active
- 2019-06-12 CN CN201980028103.XA patent/CN112020802B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
WO2019240172A1 (ja) | 2019-12-19 |
EP3809542A1 (en) | 2021-04-21 |
US20210257805A1 (en) | 2021-08-19 |
EP3809542B1 (en) | 2023-01-25 |
JP2019216204A (ja) | 2019-12-19 |
EP3809542A4 (en) | 2021-07-28 |
US12095220B2 (en) | 2024-09-17 |
CN112020802A (zh) | 2020-12-01 |
CN112020802B (zh) | 2024-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6765395B2 (ja) | 光モジュールユニット及びレーザ装置 | |
US8824519B1 (en) | VCSEL pumped fiber optic gain systems | |
US6151342A (en) | Bright diode-laser light-source | |
US9312654B2 (en) | Optical amplification component and fiber laser device | |
JP5753718B2 (ja) | 光デリバリ部品、及び、それを用いたレーザ装置 | |
US9118164B1 (en) | Composite laser gain medium | |
US20070253458A1 (en) | Diode pumping of a laser gain medium | |
US8774235B2 (en) | System and method for suppressing parasitics in an optical device | |
CN107078463B (zh) | Ld模块 | |
JP6113630B2 (ja) | 光増幅部品及びファイバレーザ装置 | |
US20020037134A1 (en) | Side pumping laser light source | |
JP2012042819A (ja) | レーザダイオードモジュール及びレーザ光源 | |
KR102135943B1 (ko) | 광섬유 레이저 장치 | |
EP2991176A1 (en) | Fiber laser cavity unit | |
CA2855913C (en) | Semiconductor laser excitation solid-state laser | |
JP2007214431A (ja) | 光ファイバレーザ | |
US20110292501A1 (en) | Scalable semiconductor waveguide amplifier | |
WO2006098313A1 (ja) | 光増幅器およびレーザ装置 | |
US20060133433A1 (en) | Efficient chamber pumped fiber laser and amplifier | |
JP2009212184A (ja) | ファイバレーザ装置 | |
Yoshida et al. | 2.8 FITs of field reliability of 1480nm/14xx-nm pump lasers | |
KR20240131350A (ko) | 레이저 매질 유닛, 레이저 증폭 장치 및 레이저 발진 장치 | |
JP2012212763A (ja) | 光増幅部品、及び、それを用いた光ファイバ増幅器及びファイバレーザ装置 | |
JP2007158012A (ja) | 励起光導入部材、光ファイバ構造体および光学装置 | |
JP2007158015A (ja) | 励起光導入部材、光ファイバ構造体および光学装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200316 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20200730 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200825 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200915 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6765395 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |