JP6760356B2 - Light emitting device and manufacturing method of light emitting device - Google Patents

Description

An embodiment of the present invention relates to a light emitting device and a method for manufacturing the light emitting device.

Light emitting diodes (LEDs) are widely used in various applications such as various types of lighting and light sources for backlights.

Patent Document 1 discloses a CSP (Chip Size Package) type semiconductor light emitting device. In the semiconductor light emitting device of Patent Document 1, the side surface of the semiconductor light emitting device having the transparent insulating substrate and the semiconductor layer is covered with a white reflective member, and a phosphor sheet is provided on the transparent insulating substrate and the white reflective member by an adhesive member. Has been done. With such a configuration, it is possible to manufacture a semiconductor light emitting device that is small and can be easily manufactured.

Japanese Unexamined Patent Publication No. 2012-227470

However, in the semiconductor light emitting device disclosed in Patent Document 1, since the semiconductor light emitting element has a transparent insulating substrate, a part of the light emitted from the semiconductor layer may be absorbed, and the light extraction may be reduced. There is.

Therefore, an embodiment of the present invention aims to provide a light emitting device having a high light extraction. Another object of the present invention is to provide a manufacturing method capable of easily manufacturing a light emitting device having a high light extraction.

The method for mounting the light emitting device according to the embodiment is a substrate having a first main surface and a second main surface, a semiconductor layer provided on the first main surface, and an electrode electrically connected to the semiconductor layer. A covering member is formed on the side surface side of the substrate so that the outer surface of the second main surface side is located outside the first main surface side of the first step of preparing the light emitting element having the above. It has a second step of covering the outer surface of the covering member with a light reflecting member, and a fourth step of removing the substrate from the semiconductor layer.

According to the embodiment of the present invention, it is possible to provide a light emitting device having high light extraction. Further, it is possible to provide a manufacturing method capable of easily manufacturing a light emitting device having a high light extraction.

It is sectional drawing of the light emitting device which concerns on Embodiment 1. FIG. It is sectional drawing which shows the 1st step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a side view which shows the 2nd step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a top view which shows the 2nd step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a side view which shows the 2nd step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a side view which shows the 2nd step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a side view which shows the 2nd step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a side view which shows the 2nd step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a side transmission view which shows the 3rd step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a side transmission view which shows the 3rd step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a side transmission view which shows the 4th step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is sectional drawing which shows the 4th step of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is sectional drawing which shows the process of forming the light-transmitting member of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is sectional drawing which shows the sealing member forming process of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is sectional drawing which shows the reflection layer formation process of the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is sectional drawing of the light emitting device which concerns on Embodiment 2. FIG. It is a top view of the light emitting device which concerns on Embodiment 2. It is a side view which shows the 2nd step of the manufacturing method of the light emitting device which concerns on Embodiment 2. It is a side transmission view which shows the 3rd step of the manufacturing method of the light emitting device which concerns on Embodiment 2. It is sectional drawing which shows the 4th step of the manufacturing method of the light emitting device which concerns on Embodiment 2.

Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light emitting device described below is for embodying the technical idea of the embodiment, and is not limited to the following. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components do not limit the technical scope of the embodiment, but are merely explanatory examples. The size and positional relationship of the members shown in each drawing may be exaggerated to clarify the explanation. The embodiments described below can be applied by appropriately combining each configuration and the like.

<Embodiment 1>
(Light emitting device)
FIG. 1 is a cross-sectional view of the light emitting device 1000 according to the present embodiment.
The light emitting device 1000 of the present embodiment is a top light emitting type (top view) in which the surface on which the n-side electrode 3n and the p-side electrode 3p of the light emitting element 10 are exposed is a mounting surface and the surface opposite to the mounting surface is a light emitting surface. Type) light emitting device. Not limited to this, a side light emitting type (side view type) light emitting device may be used. Further, the light emitting device 1000 may be mounted on another wiring board or the like, for example.

The light emitting device 1000 includes a light emitting element 10 having a semiconductor layer 2 and a pair of positive and negative electrodes 3n and 3p electrically connected to the semiconductor layer 2. Further, it has a light reflecting member 5 that covers the electrodes 3n and 3p and the surface and side surface of the semiconductor layer 2 on the side having the electrodes so as to expose the light emitting surface side of the semiconductor layer 2. The light reflecting member 5 is formed so as to surround the semiconductor layer 2 and has a side wall 5a higher than the semiconductor layer 2. The side wall 5a of the light reflecting member 5 and the exposed surface of the semiconductor layer 2 form a recess 5c of the light emitting device 1000. The inner side surface 5b of the side wall 5a of the light reflecting member 5 is formed so that the light emitting surface side of the light emitting device 1000 is located outside the semiconductor layer 2 side.
In the present embodiment, the inner side surface 5b of the side wall 5a of the light reflecting member 5 has an inclined surface that is inclined outward from the semiconductor layer 2 side toward the light emitting surface side of the light emitting device 1000. The outer surface of the light reflecting member 5 can be formed substantially perpendicular to the mounting surface. That is, the side wall 5a of the light reflecting member 5 has a tapered shape in which the thickness decreases from the semiconductor layer 2 side to the light emitting surface side of the light emitting device 1000. It is preferable that the inner side surface 5b of the side wall 5a of the light reflecting member 5 is a substantially flat inclined surface because the light from the semiconductor layer 2 can be efficiently reflected to the light emitting surface side, but the inclined surface is a flat surface. It does not have to be. For example, the inclined surface may be a curved surface, a concave surface, a convex surface, or an uneven surface (stepped surface). Further, in the present embodiment, the translucent member 6 is provided in the recess 5c.

With the above configuration, a small light emitting device 1000 can be formed. Further, since the light emitting element 10 does not have a growth substrate or the like of the semiconductor layer 2, it is possible to prevent unnecessary absorption of the emitted light from the semiconductor layer 2. Further, since the inner side surface 5b of the side wall 5a of the light reflecting member 5 is formed so as to be located on the outer side of the light emitting device 1000 on the light emitting surface side of the semiconductor layer 2 side, the light from the semiconductor layer 2 is efficiently transmitted. Can be emitted from the light emitting device 1000.
Hereinafter, the method for manufacturing the light emitting device 1000 will be described in detail.

(Manufacturing method of light emitting device)
First Step FIG. 2A is a schematic view showing the first step of the manufacturing method of the light emitting device 1000 according to the present embodiment. In the first step, the light emitting element 10 is first prepared.

The light emitting element 10 to be prepared has a substrate 1, a semiconductor layer 2, and a pair of positive and negative electrodes 3n and 3p that are electrically connected to the semiconductor layer 2. In the present embodiment, the light emitting element 10 in which the n-side electrode 3n and the p-side electrode 3p are provided on the same surface can be used. Thereby, the light emitting device 1000 in which the electrodes 3n and 3p are exposed on the mounting surface can be easily formed.

As the substrate 1 of the present embodiment, a growth substrate for growing the semiconductor layer 2 can be used. For example, when the semiconductor layer 2 is formed by using a nitride semiconductor such as GaN (gallium nitride), the substrate 1 includes an insulating substrate such as Al ₂ O ₃ or Mg Al ₂ O ₄ , SiC, ZnS, ZnO, Si. , GaAs, diamond, oxide substrates such as lithium niobate and neodymium gallium nitride that are lattice-matched with nitride semiconductors. The substrate 1 is removed in the fourth step described later.

The substrate 1 has a first main surface 1a and a second main surface 1b on the opposite side of the first main surface (that is, the back surface side facing the first main surface). The semiconductor layer 2 is provided on the first main surface 1a of the substrate 1. The semiconductor layer 2 is a laminate including an n-type semiconductor layer 2n, a light emitting layer 2a, and a p-type semiconductor layer 2p. In the present embodiment, for example, the n-type semiconductor layer 2n, the light emitting layer 2a, and the p-type semiconductor layer 2p are sequentially laminated from the first main surface 1a of the substrate 1, and a part of the p-type semiconductor layer 2p and the light emitting layer 2a is removed. By doing so, it is possible to form the semiconductor layer 2 having a step that exposes a part of the n-type semiconductor layer 2n. Further, the n-side electrode 3n electrically connected to the n-type semiconductor layer 2n is on the n-type semiconductor layer 2n, and the p-side electrode 3p electrically connected to the p-type semiconductor layer 2p on the p-type semiconductor layer 2p. Can be provided. A metal material can be used as the n-side electrode 3n and the p-side electrode 3p, and examples of the metal material include Ag, Al, Ni, Rh, Au, Cu, Ti, Pt, Pd, Mo, Cr, W and the like. , Or these alloys and the like can be preferably used. As the n-side electrode 3n and the p-side electrode 3p, those in which these metal materials are single-layered or laminated can be used.

Further, it is preferable that the entire surface electrode 3a having conductivity and reflectivity is provided on substantially the entire surface of the p-type semiconductor layer 2p other than the step, and the p-side electrode 3p is provided on the upper surface thereof. By doing so, the current supplied from the p-side electrode 3p can be uniformly diffused in the p-type semiconductor layer 2p. Further, the light from the light emitting layer 2a can be efficiently reflected to the light emitting surface side of the light emitting device 1000. As the full surface electrode 3a, Ag, Al, which is a metal material having good reflectivity in the visible light region, or an alloy containing these metals as a main component can be preferably used. As the full surface electrode 3a, a single layer or a laminated material of these metal materials can be used.

Further, a cover electrode 3b that covers the upper surface and the side surface of the entire surface electrode 3a may be provided. By doing so, migration of the entire surface electrode 3a can be prevented. As the cover electrode 3b, a metal material having conductivity and barrier property can be used, and as the material, for example, Al, Ti, W, Au or the like can be used. As the cover electrode 3b, a single layer or a laminated material of these metal materials can be used.

Further, a protective layer H having insulating and translucent properties and covering the entire surface of the light emitting element 10 is provided except for the connection portion between the substrate 1 and the outside of the n-side electrode 3n and the p-side electrode 3p. It is preferable to have it. As a result, the light emitting element 10 can be protected, and charging can be further prevented. A metal oxide or a metal nitride can be used as the protective layer H, and the material of the metal oxide or the metal nitride is selected from the group consisting of, for example, Si, Ti, Zr, Nb, Ta, and Al. At least one kind of oxide or nitride can be preferably used. A DBR (Distributed Bragg Reflector) may be used.

It is preferable that the n-side electrode 3n and the p-side electrode 3p have the same height in order to stably arrange the light emitting element 10. A metal bump or the like may be provided on the n-side electrode 3n and the p-side electrode 3p. The configuration of the light emitting element 10 is not limited to that described above, and a light emitting element having a desired configuration can be used as appropriate.

Next, the prepared light emitting element 10 is arranged on the substrate 200. The light emitting element 10 is arranged on the substrate 200 so that the second main surface 1b of the substrate 1, that is, the surface of the substrate 1 opposite to the surface on which the semiconductor layer 2 and the electrodes 3n and 3p are provided is in contact with the substrate 200. .. The substrate 200 is removed before the fourth step.

Since the substrate 200 is heated when the covering member 4 is cured in the second step described later, it is preferable that the substrate 200 is made of a heat-resistant material. The substrate 200 is preferably formed of, for example, an acrylic, silicone, or rubber-based material, and is particularly preferably formed of an acrylic-based resin. It is preferable that the substrate 200 is in the form of a sheet having a thickness of about 25 to 100 μm because it is easily peeled off from the light emitting element 10 coated with the light reflecting member 5 later.
When arranging the light emitting element 10 on the substrate 200, an adhesive may be used. As the material of the adhesive, an acrylic resin or the like can be preferably used. The adhesion strength between the light emitting element 10 and the substrate 200 is preferably such that the light emitting element 10 does not peel off from the substrate 200 when the light reflecting member 5 is formed by, for example, compression molding in the third step. For example, the adhesive strength of the substrate 200 can be about 2 to 5 N / 25 mm.

(Second step)
2B to 2G are schematic views showing a second step of the method for manufacturing the light emitting device 1000. In the second step, the covering member 4 is formed on the outer side of the side surface 1c of the substrate 1 of the light emitting element 10. The side surface 1c of the substrate 1 is a surface that connects the first main surface 1a and the second main surface 1b of the substrate 1. The covering member 4 (more specifically, the outer surface of the covering member 4) is provided to form the inner side surface 5b of the side wall 5a of the light reflecting member 5 described later.
In the present embodiment, the covering member 4 is formed so that the outer surface of the substrate 1 of the light emitting element 10 on the second main surface 1b side is located outside the outer surface of the substrate 1 on the first main surface 1a side. .. More specifically, the covering member 4 is formed so that the inner side surface covers the side surface 1c of the substrate 1 of the light emitting element 10, and the outer surface is from the first main surface 1a side to the second main surface 1b side of the substrate 1. It is formed so as to be an inclined surface 4a that inclines outward.

If the outer surface of the covering member 4 is an inclined surface having a substantially flat surface, the inner surface 5b of the light reflecting member 5 capable of more efficiently reflecting the light from the semiconductor layer 2 toward the light emitting surface side of the light emitting device 1000 is provided. Although it can be formed, the inclined surface of the outer surface of the covering member 4 does not have to be flat. For example, the inclined surface may be a curved surface, a concave surface, a convex surface, or an uneven surface (stepped surface).

Further, in the present embodiment, the covering member 4 is formed so as to cover substantially the entire surface of the side surface 1c of the substrate 1 of the light emitting element 10, but it is sufficient that the covering member 4 covers at least a part of the side surface 1c. For example, as shown in FIG. 2E, when a part of the side surface 1c of the substrate 1 has an inclined surface inclined outward from the first main surface side to the second main surface side, the covering member 4 is inclined. It may be formed so as not to cover the surface. As a result, the amount of the covering member 4 can be reduced. Therefore, it is possible to form the light reflecting member 5 that can more efficiently reflect the light from the semiconductor layer 2 toward the light emitting surface side of the light emitting device 1000 while reducing the cost and the tact.

The covering area of the light reflecting member 5 described later is determined by the covering area of the covering member 4. For example, when the covering member 4 covers only the upper surface of the substrate 200 and the side surface 1c of the substrate 1 of the light emitting element 10, the light reflecting member 5 described later is formed so as to cover the semiconductor layer 2 and the side surfaces of the electrodes 3n and 3p. To. As a result, it is possible to form the light emitting device 1000 capable of suppressing the light from the semiconductor layer 2 from leaking from other than the light emitting surface. However, the covering member 4 may cover the semiconductor layer 2 and the electrodes 3n and 3p. Further, the covering member 4 of the present embodiment is formed so as to be in contact with the side surface 1c of the substrate 1 of the light emitting element 10, but is formed at a distance from the side surface 1c of the substrate 1 or via another member. It doesn't matter. The form in which the covering member is formed on the outside of the side surface of the substrate via the other member will be described in detail in the second embodiment.

Hereinafter, some methods for forming the covering member 4 in the second step will be illustrated. First, a mode in which the covering member 4 is arranged after the light emitting element 10 is arranged on the substrate 200 will be described.

In the present embodiment, for example, the covering member 4 having a desired shape is formed by arranging the covering member 4 made of resin or the like with a dispense D or the like so as to surround the periphery of the light emitting element 10 arranged on the substrate 200. can do. Specifically, as shown in FIGS. 2B and 2C, when a substantially rectangular light emitting element 10 is used, the periphery of each light emitting element 10 arranged on the substrate 200 is formed into a substantially rectangular ring by the covering member 4. surround. The covering member 4 may be provided in an annular shape or the like in addition to the rectangular annular shape. When a light emitting element 10 having a substrate 1 having a substrate 1 having a thickness of about 1.0 × 1.0 mm and a thickness of about 0.15 mm in a plan view is used, the diameter of the discharge port of the dispense D is, for example, about 0.1 mm. be able to. The covering member 4 may be arranged at a distance of about 10 to 100 μm from the light emitting element 10. As a result, it is possible to prevent the light emitting element 10 and the dispense D from coming into contact with each other. The covering member 4 discharged from the dispense D has a substantially constant width in the vertical direction at this point.

When the rectangular annular covering member 4 arranged on the substrate 200 so as to surround the periphery of the light emitting element 10 is an uncured resin or the like, the shape changes with the passage of time. Specifically, the covering member 4 gradually wets and spreads, and the inner side surface of the covering member 4 is deformed so as to cover the side surface of the light emitting element 10 (specifically, the side surface 1c of the substrate 1). Further, as shown in FIG. 2D, at least a part of the outer surface of the covering member 4 is deformed into an inclined surface 4a that inclines outward from the first main surface side of the substrate 1 to the second main surface side. That is, the covering member 4 can be formed in a rectangular annular shape having rectangular holes, and has a tapered shape in which the thickness decreases from the first main surface side (upper surface side of the substrate 200) of the substrate 1 to the second main surface 1b side. Can be formed into. Here, it is preferable to cure the covering member 4. For example, the covering member 4 can be cured by heating at about 150 ° for about 4 hours. As a result, the covering member 4 whose outer surface on the second main surface side of the substrate 1 is located outside the outer surface on the first main surface side of the substrate 1 can be formed. The covering member 4 also has a function of adhering the light emitting element 10 and the substrate 200. The covering member 4 does not have to cover a part of the substrate 1 near the corner portion on the first main surface side.

The shape of the outer edge of the covering member 4 on the second main surface side of the substrate 1, that is, the shape of the outer edge of the covering member 4 in a plan view can be, for example, substantially circular or substantially elliptical, but is not limited thereto. The shape of the outer edge of the covering member 4 on the second main surface side of the substrate 1 is the shape of the light emitting portion of the light emitting device 1000. Therefore, by appropriately adjusting the shape of the outer edge of the covering member 4, it is possible to adjust the size and shape of the light emitting portion of the light emitting device 1000. In the present embodiment, the width from the outer edge of the second main surface of the substrate 1 to the outer edge of the covering member 4 in a plan view can be about 100 to 500 μm.

In cross-sectional view, the larger the angle formed by the outer surface (inclined surface 4a) of the covering member 4 and the side surface 1c of the substrate 1, the more efficiently the light from the semiconductor layer 2 can be reflected to the light emitting surface side of the light emitting device 1000. The inner side surface 5b of the light reflecting member 5 can be formed. For example, in cross-sectional view, the angle formed by the inclined surface 4a of the covering member 4 and the side surface 1c of the substrate 1 is about 25 ° to 65 °, more preferably about 40 ° to 50 °. It is preferable to form the inclined surface 4a.

The material of the covering member 4 is preferably a resin or the like. As a result, the outer surface of the substrate 1 of the light emitting element 10 on the second main surface side is located outside the outer surface of the substrate 1 on the first main surface side (that is, the inclined surface 4a of the covering member 4). ) Can be easily formed. In the present embodiment, the covering member 4 is also removed in the fourth step described later. Therefore, the material of the covering member 4 may be translucent or impermeable. Examples of the resin include thermosetting resins, thermoplastic resins, modified resins thereof, hybrid resins containing one or more of these resins, and the like. Specifically, epoxy resin, modified epoxy resin (silicone modified epoxy resin, etc.), silicone resin, modified silicone resin (epoxy modified silicone resin, etc.), hybrid silicone resin, unsaturated polyester resin, polyimide resin, modified polyimide resin, polyamide Resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polycyclohexane terephthalate resin, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, Examples thereof include urea resin, BT resin, and polyurethane resin. In particular, a silicone resin is preferable from the viewpoint of light transmission, heat resistance, and light resistance. The resin described above may contain a filler, a reflective material, a diffusing material, a wavelength conversion member, a coloring material, and the like.

The viscosity of the resin is preferably about 1 to 30 Pa · s. By doing so, the covering member 4 arranged on the substrate 200 so as to surround the periphery of the light emitting element 10 can be wetted and spread in a desired shape. That is, the inner side surface of the covering member 4 can be easily deformed so as to cover the side surface 1c of the substrate 1 of the light emitting element 10. Further, the outer surface of the covering member 4 can be easily deformed so as to be located outside on the second main surface side of the substrate 1 with respect to the first main surface side.
For example, when Dispens D having a discharge port diameter of about 0.1 mm is used and a coating member 4 containing a silicone resin having a viscosity of about 1 to 5 Pa · s is arranged on a substrate 200 made of an acrylic material. After arranging the covering member 4, the covering member 4 can be deformed into a desired shape by leaving it to stand for about 10 to 100 seconds.

When the covering member 4 is formed as described above, the covering member 4 is arranged for each light emitting element 10 arranged on the substrate 200, so that the arrangement of the light emitting element 1 does not require high accuracy. Moreover, it is easy to adjust the covering region of the covering member 4. Specifically, the side surface 1c of the substrate 1 can be covered without covering the semiconductor layer 2 and the electrodes 3n and 3p of each light emitting element 10. Further, since the shape of the covering member 4 can be formed by wetting and spreading of a resin or the like, a desired covering member 4 can be easily formed.

Next, a mode in which the covering member 4 is arranged before the light emitting element 10 is arranged on the substrate 200 will be described. In this embodiment, the covering member 4 is arranged in advance on the second main surface of the substrate 1 of the light emitting element 10 and / or on the upper surface of the base 200, and the light emitting element 10 is arranged on the base 200 to obtain the covering member. Form 4.

2F and 2G are schematic views showing a second step of the manufacturing method of the light emitting device 1000 according to the present embodiment. In this method, before the light emitting element 10 is arranged on the substrate 200, the covering member 4 is arranged in advance on the second main surface of the substrate 1 of the light emitting element 10 and / or on the upper surface of the substrate 200, and the light emitting element 10 is arranged. The covering member 4 is formed by crawling up on the side surface of the light emitting element 10 (more specifically, the side surface of the substrate 1 of the light emitting element 10) due to the stress at the time of arranging.

First, as shown in FIG. 2F, the covering member 4 is arranged on the substrate 200 in each region where the light emitting element 10 is arranged. The covering member 4 can be arranged by a dropping method, printing, spraying or the like. The speed at which the light emitting element 10 is arranged is preferably about 1 to 3 mm / s, more preferably about 2 mm / s. By doing so, the covering member 4 can be made to crawl up to the side surface of the light emitting element 10 by the pressure when the light emitting element 10 is arranged on the substrate 200, and the substrate 1 is more than the outer surface on the upper surface side of the substrate 1. It is possible to form the covering member 4 in which the outer surface on the lower surface side of the above is located on the outside.

When the coating member 4 is arranged on the substrate 200 in advance before the light emitting element 10 is arranged, as described above, an annular coating having a hole having a diameter larger than the outer edge of the substrate 1 of the light emitting element 10 to be arranged. The member 4 may be formed. In this case, it is preferable to arrange the light emitting element 10 on the substrate 200 in the hole before the covering member 4 gets wet and spreads. As a result, the covering member 4 wets and spreads so as to cover the side surface of the arranged light emitting element 10, so that the desired covering member 4 can be formed.

Further, by arranging the covering member 4 on the second main surface 1b of the substrate 1 of the light emitting element 10 in advance and arranging the light emitting element 10 on the substrate 200 so that the coating member 4 side faces the substrate 200, the light emitting element 10 is arranged on the substrate 200. The covering member 4 can be formed. For example, a support 300 is prepared separately from the substrate 200, a plurality of light emitting elements 10 are held on the support 300 by flip-chip mounting, and a covering member 4 is placed on the second main surface 1b of the substrate 1 of each light emitting element 10. To place. The material of the support 300 may be the same as that of the substrate 200, or a different material may be used. For example, the material of the support 300 is preferably a material having heat resistance and hardly expanding and contracting due to heat, and acrylic and the like are preferably used. The covering member 4 can be arranged on the second main surface 1b of the substrate 1 by a dropping method or the like. Then, as shown in FIG. 2G, the support 300 is inverted so that the covering member 4 side faces the substrate 200, and the light emitting element 10 is arranged on the substrate 200. As a result, the covering member 4 can be made to crawl up to the side surface of the light emitting element 10 by the pressure when the light emitting element 10 is arranged on the substrate 200, and the coating member 4 can be raised to the side surface of the light emitting element 10 and is higher than the outer surface on the first main surface side of the substrate 1. 2 The covering member 4 whose outer surface on the main surface side is located on the outer side can be formed. It is preferable that the covering member 4 has a viscosity such that it is retained on the substrate 1 even if it is inverted.
The support 300 is peeled off from the light emitting element 10 after the light emitting element 10 and the substrate 200 are adhered to each other by the covering member 4. Therefore, the adhesion strength between the light emitting element 10 and the support 300 is preferably weaker than the adhesion strength between the coating member 4 arranged on the substrate 1 of the light emitting element 10 and the substrate 200. The support 300 may be used as a part of the light emitting device without peeling off.

As a result, a plurality of light emitting elements 10 can be arranged on the substrate 200 at once, and a plurality of covering members 4 can be formed at once, so that mass productivity can be improved. The covering member 4 may be provided on both the substrate 200 and the second main surface of the substrate 1 of the light emitting element 10.

As described above, when the covering member 4 is arranged on the substrate 200 and / or on the second main surface of the substrate 1 of the light emitting element 10 before the light emitting element 10 is arranged on the substrate 200, the above-mentioned adhesive is applied. It is efficient because it can be used as the covering member 4.
When the covering member 4 is formed on the second main surface of the substrate 1 of the light emitting element 10, that is, between the substrate 1 of the light emitting element 10 and the substrate 200, the substrate 1 is subjected to before the fourth step. It is preferable to remove the covering member 4 on the second main surface.

The amount of the covering member 4 to be arranged may be, for example, about 0.05 mg each when using the light emitting element 10 having the substrate 1 having a substrate 1 having a thickness of about 0.15 mm and a thickness of about 1.0 × 1.0 mm in a plan view. it can.

In addition, the covering member 4 can be formed by compression molding or transfer molding using a mold. This makes it possible to prevent variations in the shape of the covering member 4. In addition, the selectivity of the material of the covering member 4 is improved. Further, mass productivity can be improved as compared with the case where the covering member 4 is formed for each light emitting element 10 arranged on the substrate 200.

(Third step)
2H and 2I are schematic views showing a third step of the manufacturing method of the light emitting device 1000 according to the present embodiment. In the third step, the inclined surface 4a of the covering member 4 is covered with the light reflecting member 5. Specifically, the surface and side surface of the semiconductor layer 2 having the electrodes 3n and 3p and the outer surface of the covering member 4 are integrally covered by printing, compression molding using a mold, transfer molding, or the like. The light reflecting member 5 can be formed on or in each of them. When the light reflecting member 5 is integrally formed with the plurality of light emitting elements 10 and the covering member 4, it is possible to prevent the shape of the light reflecting member 5 from being varied. Further, it is preferable because the mass productivity can be improved.
In the present embodiment, the light reflecting member 5 is formed for each of the plurality of light emitting elements 10 coated with the covering member 4. After the light reflecting member 5, the light reflecting member 5 may be partially removed so that a part of the electrodes 3n and 3p of the light emitting element 10 is exposed as shown in FIG. 2I. The removal can be performed by polishing, cutting or the like. As a result, a connection portion for connecting to an external terminal, wiring, or the like can be formed on the mounting surface of the light emitting device 1000. It is not necessary to partially remove the light reflecting member 5.

As the material of the light reflecting member 5, it is preferable that the base material such as resin contains a light reflecting material. For example, examples of the resin include thermosetting resins, thermoplastic resins, modified resins thereof, hybrid resins containing one or more of these resins, and the like. Specifically, epoxy resin, modified epoxy resin (silicone modified epoxy resin, etc.), silicone resin, modified silicone resin (epoxy modified silicone resin, etc.), hybrid silicone resin, unsaturated polyester resin, polyimide resin, modified polyimide resin, polyamide Resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polycyclohexane terephthalate resin, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, Examples thereof include urea resin, BT resin, and polyurethane resin. In particular, a silicone resin is particularly preferable from the viewpoint of light resistance and flexibility.
Examples of the light-reflecting material include titanium oxide, zinc oxide, aluminum oxide, titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, murite, niobium oxide, and various rare earth oxides (for example). , Yttrium oxide, gadrinium oxide) and the like.
The above-mentioned base material may contain a filler, a reflective material, a diffusing material, a wavelength conversion member, a coloring material, and the like.

(4th step)
2J and 2K are schematic views showing a fourth step of the manufacturing method of the light emitting device 1000 according to the present embodiment. In the fourth step, the substrate 1 of the light emitting element 10 is removed from the semiconductor layer 2. In the present embodiment, the substrate 1 and the covering member 4 formed in the second step are also removed. Specifically, as shown in FIG. 2J, a sheet-like support having a thickness of about 20 to 50 μm, more preferably about 35 μm, made of an acrylic material having heat resistance and hardly expanding and contracting due to heat. 400 is prepared, and the base 200 is inverted so that the electrodes 3n and 3p exposed from the light reflecting member 5 face each other on the support 400, and the light emitting element 10 coated with the light reflecting member 5 is attached to the support 400. Place (transfer). When arranging, an adhesive or the like may be used. Then, the substrate 200 is peeled off from the light emitting element 10 coated with the light reflecting member 5. Therefore, the adhesion strength between the light emitting element 10 coated with the light reflecting member 5 and the support 400 is preferably larger than the adhesion strength between the light emitting element 10 coated with the light reflecting member 5 and the substrate 200. As the material of the support 400, acrylic or the like is preferable from the viewpoint of heat resistance. In the light emitting element 10 coated with the light reflecting member 5 arranged (transferred) on the support 400, the second main surface of the substrate 1 and the covering member 4 are exposed from the light reflecting member 5. Here, when the second main surface of the substrate 1 and the covering member 4 are not exposed, for example, when the above-mentioned adhesive (covering member 4) covers the substrate 1, the substrate 1 is exposed. The adhesive (coating member 4) is appropriately removed.

Then, as shown in FIG. 2K, the substrate 1 of the light emitting element 10 is removed. The removal of the substrate 1 can be carried out, for example, by laser lift-off (LLO) by laser irradiation. Specifically, by irradiating the semiconductor layer 2 with a high-power laser beam such as an excimer laser from the substrate 1 side, the semiconductor material is decomposed near the boundary between the substrate 1 and the semiconductor layer 2, and the substrate 1 and the semiconductor layer 2 are decomposed. And are separated and the substrate 1 is peeled off. The laser beam has a wavelength that passes through the substrate 1 and is absorbed by the semiconductor layer 2. For example, when the substrate 1 is a sapphire substrate and the semiconductor layer 2 is GaN, the above-mentioned excimer laser (wavelength of about 248 nm) or YAG laser (wavelength of about 266 nm) can be used as the laser light. A part of the substrate 1 may remain without being removed.

When the substrate 1 is removed, the covering member 4 can be peeled off at the same time. Here, when different materials are used for the base material of the covering member 4 and the light reflecting member 5, the covering member 4 and the light reflecting member 5 are more easily peeled off than when the same material is used, and the covering member 4 is separated from the substrate 1 together with the substrate 1. Easy to remove. In addition, after the second step and before the third step, by providing a mold release agent described later on the outer surface of the covering member 4, it becomes easy to remove the covering member 4 together with the substrate 1. It is also possible that the covering member 4 is not completely removed and a part of the covering member 4 remains on the light reflecting member 5. Further, although it is efficient to remove the substrate 1 and the covering member 4 at the same time, the covering member 4 may be removed separately from the substrate 1.

By removing the substrate 1 and the covering member 4, the recess 5c composed of the light reflecting member 5 and the semiconductor layer 2 can be formed. When the covering member 4 is not completely removed and a part of the covering member 4 remains on the light reflecting member 5, the recess 5c is composed of the light reflecting member 5, the covering member 4, and the semiconductor layer 2.
By forming the light emitting device 1000 by the above manufacturing method, the shape of the inner surface 5b of the light reflecting member 5 capable of efficiently reflecting the light from the semiconductor layer 2 toward the light emitting surface side can be easily formed. ..

It is preferable to roughen the surface of the exposed semiconductor layer 2 after removing the substrate 1 and the covering member 4 in the fourth step. The roughening can be performed by a physical or chemical method, but can be performed by etching in order to reduce damage. For example, the light emitting element 10 is immersed in an acidic solution such as phosphoric acid or an alkaline solution such as potassium hydroxide, sodium hydroxide, trimethylammonium, or tetramethylammonium hydroxide solution together with the support 400, and the surface of the semiconductor layer 2 is exposed. The surface can be roughened by etching. As a result, the light from the semiconductor layer 2 can be efficiently extracted.

(Translucent member forming process)
FIG. 2L is a schematic view showing a translucent member forming step of the method for manufacturing the light emitting device 1000 according to the present embodiment. A light transmitting member 6 can be provided in the recess 5c formed in the fourth step. By doing so, the surface of the semiconductor layer 2 can be protected. By forming the translucent member 6 containing the wavelength conversion member, the light of the light emitting device 1000 can be set to a desired emission color. The translucent member 6 may be composed of only the wavelength conversion member, but it is preferable that the translucent base material contains the wavelength conversion member.

As the material of the base material, a resin, an inorganic substance such as glass, or the like can be used. In particular, it is preferable to use the above-mentioned resin material because it can be easily provided in the recess 5c. In particular, a silicone resin is preferable from the viewpoint of light transmission, heat resistance and light resistance.
As the wavelength conversion member, for example, a phosphor known in the art can be used. Specifically, yttrium aluminum garnet (YAG) fluorofluorescent activated with cerium, lutetium aluminum garnet (LAG) activated with cerium, europium and / or chromium-activated nitrogen-containing calcium aluminosilicate. Nitride of (CaO-Al ₂ O ₃ -SiO ₂ ) -based phosphors, europium-activated silicate ((Sr, Ba) ₂ SiO ₄ ) -based phosphors, β-sialone phosphors, CASN-based or SCASN-based phosphors, etc. Examples thereof include physical phosphors, KSF-based phosphors (K ₂ SiF ₆ : Mn), and sulfide-based phosphors. The wavelength conversion member may be, for example, a so-called nanocrystal or a light emitting substance called a quantum dot. Semiconductor materials can be used as these materials, and examples of the semiconductor material include II-VI group, III-V group, and IV-VI group semiconductors, specifically, CdSe and core-shell type CdS _x Se _{1. Examples} thereof include nano-sized highly dispersed particles such as _−x / ZnS and GaP. The translucent member may further contain a filler, a reflective material, a diffusing material, a coloring material, and the like.

In the present embodiment, the translucent member 6 in which the wavelength conversion member is contained in the resin as the base material can be formed in the recess 5c by dropping, spraying (spraying), printing, compression molding, transfer molding or the like. Further, a wavelength conversion sheet containing a wavelength conversion member in a resin or the like, a wavelength conversion plate containing a wavelength conversion member in glass or the like, or the like may be adhered to the surface of the exposed semiconductor layer 2. In addition, it can be formed by using various methods such as electrodeposition. The light transmitting member 6 does not have to include the wavelength conversion member.
The surface of the translucent member 6 formed by the above method may be substantially flat, or may have irregularities, steps, inclined surfaces, and curved surfaces.

(Seal member forming process)
In addition, as shown in FIG. 3, a sealing member 7 that further covers the upper surface of the light transmitting member 6 and the light reflecting member 5 may be formed. Thereby, the surfaces of the light transmitting member 6 and the light reflecting member 5 can be protected. Further, the light emitting device 1000 having the desired light distribution characteristics can be formed. As the sealing member 7, the same material as the base material of the translucent member 6 described above can be used, and a silicone resin is particularly preferable from the viewpoint of translucency and heat resistance. The shape is not particularly limited, such as a substantially hemispherical shape or a substantially flat plate shape. In particular, a flat plate-shaped thin sealing member (for example, about 10 to 30 μm) is preferable because it can be a small light emitting device 1000. Examples of the method for forming the sealing member 7 include spray molding, sputtering, printing, coating and the like, compression molding, transfer molding and the like. The sealing member 7 may contain a filler, a reflective material, a diffusing material, a wavelength conversion member, a coloring material, and the like. Further, the sealing member 7 may be formed in a plurality of layers.

(Reflective layer forming process)
Further, as shown in FIG. 4, a reflective layer 8 having a higher reflectance than the light reflecting member 5 may be provided on the inner side surface 5b of the light reflecting member 5 before the light transmitting member 6 is formed. This makes it possible to reflect light more efficiently.
Specifically, for example, after forming a mask on the surface of the semiconductor layer 2, the reflective layer 8 can be formed on the inclined surface of the inner side surface 5b of the light reflecting member 5 by a method such as spraying, sputtering, printing, or coating. it can. The reflective layer 8 can be formed of a metal material having a high light reflectance, an insulating material, or the like. Examples of the metal material include Ag, Ag alloy, Al, Au and the like. In particular, an Ag alloy having high light reflectance and excellent oxidation resistance is preferable. As the insulating material, a resin to which a light-reflecting material is added or the like can be used. The thickness of the reflective layer 8 is not particularly limited, and can be a thickness capable of effectively reflecting the light emitted from the semiconductor layer 2 (for example, about 20 nm to about 1 μm). The reflective layer 8 preferably has a reflectance of 60% or more, more preferably 70%, 80%, or 90% or more with respect to light from the semiconductor layer 2.

After the fourth step, a reflective layer forming step, a translucent member forming step, a sealing member forming step, and the like are appropriately performed to form the light emitting device 1000. In the present embodiment, the light reflecting member 5 is formed so as to be separated from each other for each of the light emitting elements 10 coated with the covering member 4. Therefore, by removing the support 400, the light emitting device 1000 shown in FIG. 1 can be obtained. Can be formed. In the third step, when the light reflecting member 5 is integrally formed, the support 400 is removed, the light reflecting member 5 is cut, and the light reflecting member 5 is separated into individual light emitting devices 1000. The light emitting device 1000 shown in 1 can be formed. Individualization can be performed by dicing or the like.

<Embodiment 2>
FIG. 5A is a schematic cross-sectional view of the light emitting device 2000 according to the second embodiment. FIG. 5B is a schematic plan view of the light emitting device 2000 according to the second embodiment. In the second embodiment, the covering member 24 is not removed in the fourth step. Therefore, the light emitting device 2000 has a covering member 24 inside the inner side surface 25b of the light reflecting member 25. Specifically, as shown in FIG. 5A, the outer surface of the covering member 24 covers the inner side surface 25b of the light reflecting member 25, and the light emitting surface side of the light emitting device 1000 is outside of the semiconductor layer 2 side. It is formed to be located in. The inner side surface of the covering member 24 corresponds to the shape of the side surface of the removed substrate 1, and is formed substantially perpendicular to the semiconductor layer 22. As shown in FIG. 5B, in a plan view, the upper surface of the covering member 24 (the surface of the light emitting device 2000 on the light emitting surface side) is a substantially rectangular ring having a substantially circular outer edge. That is, the covering member 24 has a tapered shape in which the thickness decreases from the light emitting surface side of the light emitting device 2000 to the semiconductor layer 22 side. Further, a translucent member 26 can be provided in the recess 25c (that is, inside the covering member 24) composed of the covering member 24 and the semiconductor layer 22. Other than that, it is configured in substantially the same manner as the light emitting device 1000 of the first embodiment, and the description thereof will be omitted as appropriate.

Hereinafter, in the manufacturing method of the light emitting device 2000 of the second embodiment, a part different from the manufacturing method of the light emitting device 1000 of the first embodiment will be mainly described.

In the present embodiment, the light emitting element 20 is prepared and arranged on the substrate 200 as in the first embodiment. Here, as shown in FIG. 6, the mold release agent 9 is formed on the side surface 21c of the substrate 21 of the light emitting element 20. The mold release agent 9 makes it easy to peel off the coating member 24 and the substrate 21, whereby only the substrate 21 can be removed in the fourth step. The release agent 9 can be appropriately provided by coating or the like before or after arranging the light emitting element 20 on the substrate 200. The mold release agent 9 is preferably provided so as to cover the entire side surface of the substrate 21 of the light emitting element 20, but it is not necessary to cover a part of the side surface. Further, the release agent 9 may be arranged on the substrate 200.

As the release agent 9, for example, a volatile agent or the like can be used. Since the volatile agent volatilizes when a predetermined heat is applied, the coating member 24 and the substrate 21 can be easily peeled off. As the volatile agent, for example, various solvents and organic substances such as resins can be used.
Specifically, ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone (boiling point: 150 ° C. or lower), holon (boiling point: 198 ° C.), cyclohexanone (boiling point: 155 ° C.), methylcyclohexanone (boiling point: 170 ° C.), etc. Tetrahydrofuran, dioxane, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether), ethyl acetate, methylpropyl diglycol, hexyl carbitol, butyl propylene diglucol, benzyl alcohol, butyl carbitol, cyclohexane, methylcyclohexane, cyclohexanone (boiling point: 150) ℃ or less), methyl phenyl ether (boiling point: 153 ℃), ethyl phenyl ether (172 ℃), methoxytoluene (boiling point: 172 ℃), benzyl ethyl ether (boiling point: 189 ℃), diethylene glycol dimethyl ether (boiling point: 160 ℃), Diethylene glycol diethyl ether (boiling point: 188 ° C), diethylene glycol monomethyl ether (boiling point: 194 ° C), diethylene glycol monobutyl ether (boiling point: 231 ° C.), diethylene glycol monobutyl ether acetate (boiling point: 247 ° C.), ethylene glycol monobutyl ether (boiling point: 171 ° C.) ), Ethylene glycol monoisoamyl ether (boiling point: 181 ° C.), ether-based solvent such as butyl carbitol (boiling point: 231 ° C.), and the like.

Furthermore, methanol, ethanol, isopropyl alcohol, n-butyl alcohol (boiling point: 150 ° C. or lower), 1-hexanol (boiling point: 157 ° C.), 1-heptanol (boiling point: 176 ° C.), 2-heptanol (boiling point: 160 ° C.) , 3-Heptanol (boiling point: 156 ° C), 1-octanol (boiling point: 195 ° C), 2-octanol (boiling point: 179 ° C), 2-ethyl-1-hexanol (boiling point: 184 ° C), cyclohexanol (boiling point:: 161 ° C), 1-methylcyclohexanol (boiling point: 155 ° C), 2-methylcyclohexanol (boiling point: 165 ° C), 3-methylcyclohexanol (boiling point: 173 ° C), 4-methylcyclohexanol (boiling point: 174 ° C) ), Flufuryl alcohol (boiling point: 170 ° C), benzyl alcohol ((boiling point: 205 ° C), 1,2-octanediol (boiling point: 131 ° C), 1,8-octanediol (boiling point: 172 ° C), 2- Ethyl-1,3-hexanediol (boiling point: 243 ° C), ethylene glycol (boiling point: 198 ° C), propylene glycol (boiling point: 187 ° C), 1,2-butylene glycol (boiling point: 191 ° C), hexylene glycol (boiling point: 191 ° C) Examples thereof include alcohol-based solvents such as 3-methyl-3-methoxybutanol (boiling point: 174 ° C.) and butylpropylene diglycol (boiling point: 231 ° C.).

In addition, aromatic organic solvents such as benzene, toluene, and xylene (boiling point: 150 ° C or less),
Acetate solvents such as 3-methoxy-3-methyl-1-butyl acetate (boiling point: 188 ° C.), ethylene glycol monoacetate (boiling point: 182 ° C.), diethylene glycol monobutyl ether acetate (boiling point: 247 ° C.),
Cyclic carbonate solvent such as propylene carbonate (boiling point: 241 ° C), lactone solvent such as γ-butyrolactone (boiling point: 204 ° C), pyrrolidone solvent such as N-methyl-2-pyrrolidone (boiling point: 202 ° C), α -Pinen (boiling point: 156 ° C), β-pinen (boiling point: 161 ° C), limonene (boiling point: 177 ° C), solvent (boiling point: 217 ° C), dihydroterpineol (boiling point: 207 ° C), dihydroterpinyl acetate (boiling point: 207 ° C) Examples thereof include a terpene solvent having a boiling point (boiling point: 220 ° C.) and the like.
In addition, dimethylformamide (boiling point: 153 ° C.), dimethyl sulfoxide (boiling point: 189 ° C.) and the like can be mentioned. These can be used alone or in combination of two or more. In addition, an organic binder, a viscosity modifier, or the like may be added to these volatile agents as appropriate.

When the release agent 9 is a volatile agent such as an organic solvent as described above, the release agent 9 can be removed by the heat applied when the light reflecting member 25 is formed in the third step later. As a result, when the substrate 21 is removed in the fourth step, it is possible to prevent the covering member 24 from being removed together with the substrate 21, and the coating member 24 can be held on the light reflecting member 25 side.

Next, in the second step, the inner side surface is coated with the release agent 9 provided on the side surface of the light emitting element 20 and the outer side surface is from the first main surface side of the substrate 21 in the same manner as in the first embodiment. Also forms a covering member 24 located on the outside on the second main surface side. Then, in the third step, the light reflecting member 25 is formed so as to cover the outer surface of the covering member 24. Subsequently, a part of the light reflecting member 25 is appropriately removed so that the electrodes 23n and 23p of the light emitting element 20 are exposed. Then, the light emitting element 20 on which the light reflecting member 25 is formed is arranged (transferred) from the substrate 200 to the support 400. As shown in FIG. 7, in the light emitting element 20 coated with the light reflecting member 25 arranged (transferred) on the support 400, the second main surface 21b of the substrate 21 and the covering member 24 are exposed from the light reflecting member 25. To do.

Then, as shown in FIG. 8, in the fourth step, only the substrate 21 is removed by LLO or the like. A part of the substrate 21 may remain without being removed. Further, a part of the covering member 24 may be removed. After the fourth step, the light emitting device 2000 is formed by appropriately performing a reflective layer forming step, a translucent member forming step, a sealing member forming step, and individualizing. As a result, the light emitting device 2000 having the covering member 24 can be further formed in the light emitting device 1000 of the first embodiment.

In the second embodiment, since the covering member 24 is not removed, it is preferable that the material of the covering member 24 has translucency. Preferably, the transmittance of light from the semiconductor layer 2 is 60% or more, more preferably 70%, 80% or 90% or more.

The covering member 24 may contain a filler, a reflective material, a diffusing material, a wavelength conversion member, a coloring material, and the like. For example, by incorporating different wavelength conversion members into the translucent member 26 and the covering member 24, it is possible to form a light emitting device 2000 having high color rendering properties. The covering member 24 and / or the translucent member 26 may not include the wavelength conversion member. Further, by using the same resin or the like as the base material of the covering member 24 and the translucent member 26, the adhesion between the two members can be improved. Further, by using the same resin or the like as the base material of the covering member 24 and the light reflecting member 25, the adhesion between the two members can be improved, and the covering member 24 is placed on the light reflecting member 25 side in the fourth step. Easy to hold.

Although some embodiments have been illustrated above, it goes without saying that the present invention is not limited to the above-described embodiments and can be arbitrary as long as it does not deviate from the gist of the present invention.

1000, 2000 ... Light emitting device 10, 20 ... Light emitting element 1,21 ... Substrate 1a ... First main surface 1b, 21b ... Second main surface 1c, 21c ... Side surface 2, 22 ... Semiconductor layer 2n ... n-type semiconductor layer 2a ... Light emitting layer 2p ... p-type semiconductor layer 3n, 23n ... n-side electrode 3p, 23p ... p-side electrode 3a ... Full-face electrode 3b ... Cover electrode H ... Protective film 4,24 ... Coating member 4a ... Inclined surface 5,25 ... Light reflection Members 5a, 25a ... Side walls 5b, 25b ... Inner side surfaces 5c, 25c ... Recesses 6, 26 ... Transmissive members 7 ... Sealing members 8 ... Reflective layer 9 ... Mold release agent 200 ... Base 300, 400 ... Support D ... Dispens

Claims (5)

A light emitting element having a pair of electrodes on the lower surface,
A translucent member provided on the upper surface of the light emitting element and having a side surface whose upper end is located outside the lower end.
A light reflecting member that integrally covers the side surface side of the light emitting element and the translucent member and does not cover the upper surface of the transmissive member and the lower surface of the electrodes of the pair of electrodes.
A reflective layer on the inner surface of the light-transmitting member, which is a side surface of the light-transmitting member and has a light reflectance higher than the light reflectance of the light-reflecting member .
A light emitting device characterized by having. The light emitting device according to claim 1, wherein the side surface of the translucent member has a curved surface. The light emitting device according to claim 1 or 2, wherein the light reflecting member has polishing marks or cutting marks on the lower surface of the light emitting device. The light emitting device according to claim 1 to 3, further comprising a sealing member that covers the upper surface of the translucent member. The light emitting device according to claim 4, wherein the base material of the sealing member is the same as the base material of the translucent member.

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