JP6940784B2 - Manufacturing method of light emitting device - Google Patents

Description

The present invention relates to a method for manufacturing a light emitting device including a semiconductor light emitting element and a light reflecting member.

A light emitting device has been proposed in which a reflective layer is provided on the side surface of an LED (light emitting diode) which is a semiconductor light emitting element to efficiently emit light in the upward direction. For example, Patent Document 1 describes a light emitting device that covers the side surface of an LED chip with a resin member that imparts light reflectivity by containing a light-reflecting filler in a translucent resin.
Further, Patent Document 2 describes a light emitting device in which a package is formed by using a resin material containing 46% by weight or more of a light-reflecting filler in a resin, and an LED is mounted in a recess of the package.

Japanese Unexamined Patent Publication No. 2012-243822 Japanese Patent No. 4778085

When the reflective layer is formed by using a white resin that imparts light reflectivity by containing a light-reflecting filler in a translucent resin, as in the light-emitting device described in Patent Document 1, the incident light A part of the light may pass through the reflective layer and leak to the outside.
Further, in order to obtain a sufficient reflectance with a white resin, it is necessary to add a light-reflecting filler at a high content rate, for example, as in the resin material described in Patent Document 2. However, when the light-reflecting filler is added at a high content rate, the fluidity of the resin material is lowered and hardened, so that the moldability is deteriorated and the molded product becomes brittle, so that the reliability of the molded product is lowered.
Therefore, it has been difficult to form a reflective layer (light reflecting member) having good light reflectivity and high reliability on the side surface of the semiconductor light emitting element by using a resin material.

The present invention has been devised in view of the above problems, and is a method for manufacturing a light emitting device provided with a light reflecting member having excellent light reflectivity and high reliability by using a material composed of a resin and a light reflecting substance. The challenge is to provide.

In order to solve the above-mentioned problems, the light emitting device according to the embodiment of the present invention includes a semiconductor light emitting element and a light reflecting member which covers the side surface of the semiconductor light emitting element and has a laminated structure. Is provided inside the semiconductor light emitting element side and is provided in contact with a first layer formed by containing a light-reflecting substance in a translucent resin and a translucent resin. It has a second layer obtained by incorporating a light-reflecting substance in a resin having a light-reflecting substance at a content lower than that of the first layer.

Further, the method for manufacturing a light emitting device according to the embodiment of the present invention is a method for manufacturing a light emitting device in which the side surface of the semiconductor light emitting element is covered with a light reflecting member having a laminated structure, and the semiconductor light emitting element is mounted on a substrate. The first layer of the light-reflecting member made of a light-transmitting resin containing a light-reflecting substance so as to cover the upper surface and the side surface of the semiconductor light-emitting element and the process of mounting the semiconductor light-emitting element. A layer forming step and a second layer formation in which a second layer of the light reflecting member made of a translucent resin having a lower content of the light reflecting substance than the first layer is laminated on the first layer. It includes a step and a light reflecting member removing step of removing the first layer and the second layer formed on the upper surface of the semiconductor light emitting element.

Further, the method for manufacturing a light emitting device according to another embodiment of the present invention is a method for manufacturing a light emitting device in which the side surface of the semiconductor light emitting element is coated with a light reflecting member having a laminated structure, and the surface is adherent. The semiconductor light emitting element mounting step of mounting the semiconductor light emitting element on the sheet so that the sheet and the light extraction surface of the semiconductor light emitting element face each other, and so as to be in contact with the side surface of the semiconductor light emitting element. A step of forming a translucent member having an outer surface inclined so as to be outward in the light extraction direction with respect to the thickness direction of the semiconductor light emitting element, and an upper surface of the semiconductor light emitting element and the translucency. A first layer forming step of forming a first layer of the light reflecting member made of a translucent resin containing a light reflecting substance so as to cover the outer surface of the light reflecting member, and a first layer forming step on the first layer. A second layer forming step of laminating and forming a second layer of the light reflecting member made of a translucent resin having a lower content of the light reflecting substance than the first layer, and forming on the upper surface of the semiconductor light emitting element. By removing the first layer and the second layer, the light reflecting member removing step of exposing the electrodes of the semiconductor light emitting element and the sheet are peeled from the semiconductor light emitting element and the translucent member. It has a sheet removing step of removing the light.

According to the light emitting device according to the embodiment of the present invention, the brightness in the front direction of the light emitting device can be increased, and the reliability of the light emitting device can be increased.
Further, according to the method for manufacturing a light emitting device according to the embodiment of the present invention, it is possible to manufacture a light emitting device having high brightness in the front direction and high reliability.

It is a schematic diagram which shows the structure of the light emitting device which concerns on 1st Embodiment of this invention, (a) is a plan view, (b) is a sectional view in line I-I of (a). It is a schematic cross-sectional view which shows the structural example of the semiconductor light emitting element used in the light emitting device which concerns on 1st Embodiment of this invention. It is a graph which shows the relationship between the film thickness of a light-reflecting member, and the light reflectance for each content rate of a light-reflecting substance. It is a flowchart which shows the procedure of the manufacturing method of the light emitting device which concerns on 1st Embodiment of this invention. It is a schematic diagram which shows the structure of the mounting board prepared in the mounting board preparation step in the manufacturing method of the light emitting device which concerns on 1st Embodiment of this invention, (a) is a plan view, (b) is II of (a). It is sectional drawing in -II line. It is a schematic diagram which shows the semiconductor light emitting element mounting process in the manufacturing method of the light emitting device which concerns on 1st Embodiment of this invention, (a) is a plan view, (b) is the sectional view in line III-III of (a). be. It is a schematic cross-sectional view which shows a part of the manufacturing process in the manufacturing method of the light emitting device which concerns on 1st Embodiment of this invention, (a) is a 1st layer forming process, (b) is a 2nd layer forming process, ( c) shows a light reflecting member removing step, and (d) shows a wavelength conversion member forming step. It is a schematic diagram which shows the individualization process in the light emitting device which concerns on 1st Embodiment of this invention, (a) is a plan view, (b) is a sectional view in line III-III of (a). It is a schematic cross-sectional view which shows the structure of the light emitting device which concerns on 2nd Embodiment of this invention. It is a flowchart which shows the procedure of the manufacturing method of the light emitting device which concerns on 2nd Embodiment of this invention. It is a schematic cross-sectional view which shows a part of the manufacturing process in the manufacturing method of the light emitting device which concerns on 2nd Embodiment of this invention, (a) is a semiconductor light emitting element mounting process, (b) is a 2nd layer forming process, ( c) shows the light reflecting member removing step. It is a schematic cross-sectional view which enlarged a part of the light emitting device which concerns on 3rd Embodiment of this invention. It is a schematic diagram which shows the structure of the light emitting device which concerns on 4th Embodiment of this invention, (a) is a plan view, (b) is a sectional view in line IV-IV of (a). It is a flowchart which shows the procedure of the manufacturing method of the light emitting device which concerns on 4th Embodiment of this invention. It is a schematic diagram which shows the semiconductor light emitting element mounting process in the manufacturing method of the light emitting device which concerns on 4th Embodiment of this invention, (a) is a plan view, (b) is a sectional view in line VV of (a). Is. It is a schematic diagram which shows the process of forming a translucent member in the manufacturing method of the light emitting device which concerns on 4th Embodiment of this invention, (a) is a plan view, (b) is a sectional view in line VV of (a). Is. It is a schematic cross-sectional view which shows a part of the manufacturing process in the manufacturing method of the light emitting device which concerns on 4th Embodiment of this invention, (a) is a 1st layer forming process, (b) is a 2nd layer forming process, ( c) shows a light reflecting member removing step, and (d) shows a sheet removing step. It is a schematic cross-sectional view which shows a part of the manufacturing process in the manufacturing method of the light emitting device which concerns on 4th Embodiment of this invention, (a) shows the wavelength conversion member forming process, (b) shows the individualizing process. It is a schematic cross-sectional view which shows the structure of the light emitting device which concerns on 5th Embodiment of this invention. It is a flowchart which shows the procedure of the manufacturing method of the light emitting device which concerns on 5th Embodiment of this invention. It is a schematic cross-sectional view which shows a part of the manufacturing process in the manufacturing method of the light emitting device which concerns on 5th Embodiment of this invention, (a) is a translucent member coating process, (b) is a semiconductor light emitting element mounting process. , (C) show the wavelength conversion member forming step.

Hereinafter, a light emitting device and a method for manufacturing the light emitting device according to the embodiment of the present invention will be described.
Since the drawings referred to in the following description schematically show the embodiment of the present invention, the scale, spacing, positional relationship, etc. of each member are exaggerated, or some of the members are not shown. May have been. In addition, the scale and spacing of the members may not match in the plan view and the cross-sectional view thereof. Further, in the following description, in principle, the same or the same quality members are shown for the same name and reference numeral, and detailed description thereof will be omitted as appropriate.

<First Embodiment>
[Configuration of light emitting device]
First, the configuration of the light emitting device according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2.
As shown in FIG. 1, the light emitting device 100 according to the present embodiment includes a semiconductor light emitting element 1 (hereinafter, appropriately referred to as a “light emitting element”), a light reflecting member 2, a wavelength conversion member 3, and a mounting substrate (sub). It is configured to include a mount) 9.
The light emitting element 1 is flip-chip mounted on the mounting substrate 9 via a conductive adhesive member 93 such as solder. Further, a light reflecting member 2 having a first layer 21 and a second layer 22 is provided on the side surface of the light emitting element 1 to improve the light extraction efficiency from the upper surface side of the light emitting element 1. Further, a wavelength conversion member 3 is provided on the upper surface of the light emitting element 1, and is configured to convert at least a part of the light emitted by the light emitting element 1 into light having a different wavelength and emit the light.

Next, the configuration of each part of the light emitting device 100 will be described in detail in order.
The light emitting element 1 has a substantially rectangular parallelepiped shape which is a horizontally long rectangle in a plan view, and the n-side electrode 13 and the p-side electrode 15 are provided on one surface side, and the wiring of the mounting substrate 9 which is a submount is provided. This is an LED chip having a configuration suitable for flip chip mounting, which is joined to the electrodes 92n and 92p via a conductive adhesive member 93.
Here, a configuration example of the light emitting element 1 will be described with reference to FIG. Note that, in FIG. 2, the surface on which the n-side electrode 13 and the p-side electrode 15 are provided is shown to be upward, and the top and bottom are shown upside down from FIG. 1 (b). Further, in FIG. 1 and FIG. 6 described later, the configuration of the light emitting element 1 is shown in a simplified manner.

As shown in FIG. 2, the light emitting element 1 includes a growth substrate 11, a semiconductor laminate 12, an n-side electrode 13, a full-surface electrode 14, a p-side electrode 15, and an insulating film 16.
The light emitting element 1 includes a semiconductor laminate 12 in which an n-type semiconductor layer 12n and a p-type semiconductor layer 12p are laminated on one surface of a growth substrate 11. The semiconductor laminate 12 emits light by connecting an external power source between the n-side electrode 13 and the p-side electrode 15 and energizing the semiconductor laminate 12, and between the n-type semiconductor layer 12n and the p-type semiconductor layer 12p. It is preferable to include an active layer 12a.

The growth substrate 11 is a substrate for epitaxially growing the semiconductor laminate 12. The growth substrate 11 may be formed of a substrate material capable of epitaxially growing the semiconductor laminate 12, and the size, thickness, and the like are not particularly limited. For example, when the semiconductor laminate 12 is formed by using a nitride semiconductor such as GaN (gallium arsenide), the substrate material is sapphire or spinel whose main surface is any of C-plane, R-plane, and A-plane. Insulating substrates such as (MgAl ₂ O ₄ ) and oxide substrates such as silicon carbide (SiC), ZnS, ZnO, Si, GaAs, diamond, and lithium niobate, neodymium gallium, which lattice-bond with nitride semiconductors. Can be mentioned. In order to make the light emitting element 1 suitable for flip-chip mounting, it is preferable to use a material having good translucency for the growth substrate 11.

The semiconductor laminate 12 is a laminate in which an n-type semiconductor layer 12n including an active layer 12a and a p-type semiconductor layer 12p are laminated. The semiconductor laminate 12 is formed with a region in which the p-type semiconductor layer 12p and the active layer 12a are partially absent, that is, a region recessed from the surface of the p-type semiconductor layer 12p (this region is referred to as a “step portion 12b”). Has been done. An n-side electrode 13 electrically connected to the n-type semiconductor layer 12n is provided on the bottom surface of the step portion 12b. A full-face electrode 14 having good conductivity and light reflectivity is provided on substantially the entire upper surface of the p-type semiconductor layer 12p. Further, the surface of the semiconductor laminate 12 is covered with the insulating film 16 directly or via the full surface electrode 14, except for a part of the bottom surface of the step portion 12b and a part of the upper surface of the full surface electrode 14.

The semiconductor laminate 12 (n-type semiconductor layer 12n, active layer 12a, and p-type semiconductor layer 12p) is preferably In _X Al _Y Ga _1-XY N (0 ≦ X, 0 ≦ Y, X + Y <1) or the like. Used for. Further, each of these semiconductor layers may have a single-layer structure, but may also have a laminated structure of layers having different compositions and film thicknesses, a superlattice structure, or the like. In particular, the active layer 12a preferably has a single quantum well or multiple quantum well structure in which thin films that generate a quantum effect are laminated.

The full surface electrode 14 is provided so as to cover substantially the entire upper surface of the p-type semiconductor layer 12p. The front surface electrode 14 is a conductor layer for diffusing the current supplied through the p-side electrode 15 provided on a part of the upper surface over the entire surface of the p-type semiconductor layer 12p. Further, the entire surface electrode 14 has good reflectivity, and also functions as a reflective film that reflects the light emitted by the light emitting element 1 in the downward direction (upward in FIG. 1B), which is the light extraction surface. ..

For the front surface electrode 14, a metal material having good conductivity and reflectivity can be used. In particular, as a metal material having good reflectivity in the visible light region, Ag, Al or an alloy containing these metals as a main component can be preferably used. Further, as the full surface electrode 14, a single layer or a laminated one of these metal materials can be used. In particular, when Ag, which is easy to migrate, is used as the lower layer (p-type semiconductor layer 12p side) of the entire surface electrode 14, good conductivity and barrier properties such as Al, Ti, W, and Au are provided as the upper layer. It is preferable to coat the lower layer with the metal material to be provided.

The n-side electrode 13 is provided on the bottom surface of the step portion 12b of the semiconductor laminate 12 so as to be electrically connected to the n-type semiconductor layer 12n within the opening 16n of the insulating film 16. Further, the p-side electrode 15 is provided on the upper surface of the front surface electrode 14 so as to be electrically connected to the front surface electrode 14 within the opening 16p of the insulating film 16. The n-side electrode 13 is a pad electrode for supplying an external current to the n-type semiconductor layer 12n, and the p-side electrode 15 is a pad electrode for supplying an external current to the p-type semiconductor layer 12p via the entire surface electrode 14.
Further, the n-side electrode 13 and the p-side electrode 15 are provided so as to extend over a wide range on the entire surface electrode 14 via the insulating film 16.

Metallic materials can be used as the n-side electrode 13 and the p-side electrode 15, for example, elemental metals such as Ag, Al, Ni, Rh, Au, Cu, Ti, Pt, Pd, Mo, Cr, and W. Those alloys and the like can be preferably used. Further, as the n-side electrode 13 and the p-side electrode 15, a single layer or a laminated material of these metal materials can be used.

The insulating film 16 is a layer that covers the upper surface and the side surface of the semiconductor laminate 12 and the entire surface electrode 14, and functions as a protective film and an antistatic film of the light emitting element 1. The insulating film 16 has an opening 16n in a part of the bottom surface of the step portion 12b, and has an opening 16p in a part of the upper surface of the front surface electrode 14. Further, the n-side electrode 13 and the p-side electrode 15 are provided so as to complementarily extend over a wide area on the upper surface of the insulating film 16.
As the insulating film 16, a metal oxide or a metal nitride can be used. For example, at least one metal oxide or nitride selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al can be used. It can be preferably used.

The light emitting element 1 shown in FIG. 2 is an example, and the outer shape, the arrangement region of the step portion 12b, the n-side electrode 13 and the p-side electrode 15 and the like can be appropriately changed. ..

Returning to FIG. 1, the configuration of the light emitting device 100 will be described.
The light reflecting member 2 is provided so as to cover the side surface of the light emitting element 1, and reflects the light emitted from the side surface of the light emitting element 1 into the light emitting element 1. Here, the light reflecting member 2 is provided on the side surface of the semiconductor laminate 12 and the growth substrate 11, which are members through which light propagates. Thereby, the emission brightness of the upper surface of the light emitting element 1 which is the light extraction surface can be improved.

The light reflecting member 2 shown in FIG. 1 is composed of a first layer 21 provided on the inside, that is, on the light emitting element 1 side, and a second layer 22 provided on the outside of the first layer 21.
The first layer 21 and the second layer 22 are formed as a layer in which particles of a light-reflecting substance are contained in a translucent resin.

As described above, the higher the content of the light-reflecting substance, the higher the reflectance, but the lower the fluidity of the resin material and the harder it becomes, so that the moldability deteriorates. In addition, since the molded product becomes brittle, the reliability of the molded product decreases. Therefore, in the present embodiment, the first layer 21 is formed to have a higher reflectance than the second layer 22 by containing a light-reflecting substance at a high content, and the light-reflecting member 2 as a whole is brittle. It is formed of a thinner film than the second layer 22 so as not to become. Then, the second layer 22 is formed into a thick film so that the mechanical strength of the light reflecting member 2 as a whole is ensured by containing the light reflecting substance at a content rate within a range where sufficient moldability can be obtained. With such a configuration, both the light reflectivity and the moldability of the light reflecting member 2 can be achieved at the same time.
Further, by providing such a light reflecting member 2, it is possible to improve the emission brightness in the front direction, which is the direction of the light extraction surface of the light emitting device 100, and the reliability of the light emitting device 100.

The content of the light-reflecting substance in the first layer 21 can be determined according to the film thickness thereof. The first layer 21 is reinforced by the second layer 22 from the outside so that the shape is maintained. Therefore, the first layer 21 can contain a light-reflecting substance at a higher content than that of the second layer 22 in order to obtain better light reflectivity than the second layer 22.
The content of the light-reflecting substance in the first layer 21 is preferably 60% by mass or more, and more preferably 90% by mass or more so that good reflectivity can be obtained. Further, the content of the light-reflecting substance in the first layer 21 is preferably 99% by mass or less so that sufficient binding properties between the particles of the light-reflecting substance can be obtained.
The content of the light-reflecting substance in the first layer 21 may exceed 99% by mass as long as sufficient adhesion is obtained between the first layer 21 and the side surface of the light emitting element 1.

The film thickness of the first layer 21 is preferably 2 μm or more, and more preferably 10 μm or more so that the first layer 21 can be formed with a stable shape and a film thickness with stable accuracy.
Further, the first layer 21 is preferably formed with a thick film thickness within a range in which the shape can be maintained by reinforcement by the second layer 22. Therefore, the film thickness of the first layer 21 is preferably 30 μm or less.

The second layer 22 preferably contains a light-reflecting substance at a high content rate within a range in which sufficient moldability can be obtained by, for example, a molding method using a mold or a frame.
The content of the light-reflecting substance in the second layer 22 is preferably 10% by mass or more and 60% by mass or less, and more preferably 20% by mass or more and 50% by mass or less.
If the first layer 21 can have a sufficiently high light reflectance (for example, 90% or more), the content of the light-reflecting substance contained in the second layer 22 may be about 1% by mass. Well, it may not be contained.
Further, it is preferable that the second layer 22 is formed with a film thickness that can sufficiently reinforce the shape of the first layer 21 so as to be maintained. Therefore, the film thickness of the second layer 22 is preferably 30 μm or more.

The resin material used for the first layer 21 preferably has good translucency. Further, it is preferable to use a thermosetting resin as the resin material. A slurry containing a thermosetting resin and solid particles of a photoreflecting substance is formulated as a solvent, and the thermosetting resin is cured by heating after spray coating to obtain solid particles of a photoreflecting substance. Even when the content is high, the first layer 21 can be formed with a stable film thickness.

Examples of such resin materials include silicone resin, silicone-modified resin, epoxy resin, epoxy-modified resin, urea resin, phenol resin, polycarbonate resin, acrylic resin, polymethylpentene resin, polynorbornene resin, and these resins. Examples include hybrid resins containing one or more types. Of these, a silicone resin or an epoxy resin is preferable, and a silicone resin having excellent light resistance and heat resistance is particularly preferable.

As the resin material used for the second layer 22, the same resin material as the first layer 21 described above can be used. Further, the second layer 22 can be formed by a spray method like the first layer 21, but can also be formed by a molding method using a mold, a screen printing method, or the like.
The resin material used for the first layer 21 and the resin material used for the second layer 22 may be different materials, but by using the same kind of material, the first layer 21 and the first layer 21 have higher adhesion. The two layers 22 can be joined. Further, when molding the second layer 22, silica or the like may be added to the above-mentioned slurry in order to adjust the viscosity and fluidity.

Further, the resin used for the first layer 21 preferably has a higher refractive index with respect to the light emitted by the light emitting element 1 than the resin used for the second layer 22. With this configuration, the light that passes through the first layer 21 and propagates toward the second layer 22 is efficiently transmitted at the interface between the first layer 21 and the second layer 22 based on Snell's law. Can be reflected.

As the light-reflecting substance contained in the first layer 21 and the second layer 22, it is preferable to use particles of a material having a large difference in refractive index from the above-mentioned resin material and having good translucency.
Such a light-reflecting substance preferably has a refractive index of, for example, 1.8 or more, and is preferably 2.0 or more in order to efficiently scatter light and obtain high light extraction efficiency. More preferably, it is 2.5 or more. The difference in refractive index from the resin material is, for example, 0.4 or more, preferably 0.7 or more, and 0.9 or more in order to efficiently scatter light and obtain high light extraction efficiency. More preferably. The average particle size (median diameter) of the particles of the light-reflecting substance is preferably 0.08 μm or more and 10 μm or less, and 0.1 μm or more and 5 μm or less so that the light scattering effect can be obtained with high efficiency. Is more preferable.

Examples of such light-reflecting substances include TiO ₂ (titanium oxide), ZrO ₂ (zinc oxide), MgO (magnesium oxide), MgCO ₃ (magnesium carbonate), Mg (OH) ₂ (magnesium hydroxide), and CaCO _3. (Calcium carbonate), Ca (OH) ₂ (calcium hydroxide), CaSiO ₃ (calcium silicate), ZnO (zinc oxide), BaTIO ₃ (barium titanate), Al ₂ O ₃ (aluminum oxide), etc. can be used. can. Among them, TiO ₂ is preferable because it is relatively stable against moisture and has a high refractive index and is also excellent in thermal conductivity.
_{Further, in order to obtain better reflectivity, it is preferable to use TiO 2} as a light-reflecting substance when the light emitted by the light emitting element 1 is visible light, and when it is ultraviolet light, a light-reflecting substance. It is preferable to use Al ₂ O _{3 as a base material.}

Here, a specific example of the light reflectance of the first layer 21 and the second layer 22 of the light reflecting member 2 will be described with reference to FIG. FIG. 3 is an experiment in which the first layer 21 or the second layer 22 is assumed to be a reflective film, which is produced by changing the content and film thickness of the light-reflecting substance, and the light reflectance is measured for each of the produced reflective films. It shows the result.
_{In this experiment, TiO 2} particles having an average particle size (median diameter) of 0.2 μm were used as the light-reflecting substance, and a silicone resin was used as the light-transmitting resin material to form a reflective film. Assuming the first layer 21, when _{the content of TiO 2} is 95% by mass (plot with white circle "○") and 60% by mass (plot with black circle "●"), the reflective film is sprayed (SP). Was produced. Further, assuming the second layer 22, the transfer molding method (plot with the white square "□") and 40% by mass (plot with the black square "■") contains _{TiO 2.} A reflective film was prepared with TM).
_{As shown in FIG. 3, it can be seen that the higher the content of TiO 2} which is a light-reflecting substance and the thicker the film thickness, the higher the light reflectance.

_{Further, reflective films having a film thickness of 30 μm and TiO 2} contents of 95% by mass, 60% by mass, and 40% by mass were formed on the side surface of the LED chip which is the light emitting element 1 as Experimental Examples 1 to 3, respectively. Table 1 shows the experimental results of measuring the light emission output from the front direction of the LED. Here, the light emission output of the LED is set to "100" in Experimental Example 3, and is indicated by a relative value thereof in Experimental Examples 1 and 2.
The reflective films of Experimental Examples 1 and 2 were formed by the spray method, and the reflective films of Experimental Example 3 were formed by the transfer molding method. Further, Experimental Examples 1 to 3 shown as the experimental results shown in Table 1 were conducted by providing only a reflective film having a film thickness corresponding to the first layer 21.

As shown in Table 1, in Experimental Example 3 in which a reflective film having a content of 40% by mass used as a conventional light reflecting member was formed, the content of the reflective film was 60, as compared with the light reflectance of 80%. In the case of Experimental Example 2 in which a reflective film of mass% was formed, the light reflectance of the reflective film was 90%, and a light emission output of 110% was obtained. Further, in the case of Experimental Example 1 in which a reflective film having a content of 95% by mass was formed, the light reflectance of the reflective film was 95%, and an emission output of 115% was obtained. According to this experiment, a thin film having a high content of light-reflecting material is provided instead of a part of the thickness of the reflective film having a content of light-reflecting material that is used as a conventional light-reflecting member. It can be seen that the light reflectance can be obtained to improve the output of the LED in the front direction.

Returning to FIGS. 1 and 2, the configuration of the light emitting device 100 will be continued.
The wavelength conversion member 3 is provided on the upper surface side of the light emitting surface of the light emitting element 1, and is a layer containing a wavelength converting substance that converts the light emitted by the light emitting element 1 into light having a different wavelength.
The wavelength conversion substance is a phosphor, and the wavelength conversion member 3 can be formed by using, for example, a translucent resin containing particles of the phosphor. As the resin material, the same resin material as that used for the light reflecting member 2 can be used. Further, in order to impart light diffusivity to the wavelength conversion member 3, particles of a light diffusing substance may be contained. As the light diffusing substance, the above-mentioned light reflecting substance can be used.

The film thickness of the wavelength conversion member 3 can be determined by the content of the phosphor, the color tone after mixing the light emitted by the light emitting element 1 and the light after wavelength conversion, and is set to, for example, 1 μm or more and 1000 μm or less. It is possible, preferably 5 μm or more and 500 μm or less, and more preferably 10 μm or more and 200 μm or less.

In the present embodiment, the wavelength conversion member 3 is provided so as to extend to the upper surface of the light reflecting member 2, but may be provided only on the light emitting element 1. Further, the wavelength conversion member 3 is not an indispensable configuration and may be omitted. Further, instead of the wavelength conversion member 3, a light diffusing member containing a light diffusing substance may be provided, or a transparent layer serving as a protective film may be provided.

The phosphor (wavelength conversion substance) is not particularly limited as long as it is a fluorescent substance that is excited by light having a wavelength emitted by the light emitting element 1 and emits fluorescence having a wavelength different from the excitation light, and a granular phosphor is used. It can be preferably used. Since the granular phosphor has light scattering and light reflecting properties, it also functions as a light scattering member in addition to the wavelength conversion function, and can obtain a light diffusing effect. The fluorescent material is preferably uniformly dispersed in the resin layer containing the fluorescent material.

When the wavelength conversion member 3 is formed by the spray method, the phosphor has an average particle size of about 2.5 to 30 μm so that the slurry prescribed together with the solvent and the thermosetting resin can be spray-applied. Is preferable.
The value of the average particle size of the phosphor can be determined by the air permeation method or F.I. S. S. S. It is based on No (Fisher-SubSieve-Sizers-No.) (A value represented by a so-called D bar (a bar above D)).

As the phosphor material, a material known in the art can be used. For example, a YAG (yttrium aluminum garnet) fluorophore activated with cerium that emits green to yellow, a LAG (yttrium aluminum garnet) phosphor activated by cerium that emits green, and green to red. _{Nitrogen-containing calcium aluminosilicate (CaO-Al 2} O _{3 -SiO 2} ) phosphor activated with luminescent europium and / or chromium, silicate activated with europium luminescent blue to red ((Sr, Ba) ₂₎ SiO ₄ ) -based fluorescent material, β-sialon fluorescent material that emits green light, nitride-based fluorescent material such as CASN-based or SCASN-based fluorescent material that emits red light, KSF (K ₂ SiF ₆ : Mn) -based fluorescent light that emits red light. Examples include sulfide-based phosphors that emit light in the body, green or red.

Further, the phosphor material may be, for example, a so-called nanocrystal or a luminescent substance called a quantum dot. Such materials include semiconductor materials such as II-VI group, III-V group, and IV-IV group semiconductors, specifically, CdSe, core-shell type CdS _X Se _1-X / ZnS, GaP, and the like. Nano-sized highly dispersed particles such as InAs can be mentioned. Such a phosphor can have, for example, a particle size of 1 to 100 nm, preferably about 1 to 20 nm (about 10 to 50 atoms). By using a phosphor having such a particle size, internal scattering can be suppressed, scattering of color-converted light can be suppressed, and the light transmittance of the wavelength conversion member 3 can be further improved. ..

The mounting board (board) 9 is a sub-mount for mounting and packaging the light emitting element 1. The mounting substrate 9 shown in FIG. 1 is a horizontally long rectangular and flat plate-shaped substrate 91 in a plan view, and wiring provided on each of the left and right sides of the substrate 91 in the longitudinal direction by bending from the upper surface to the back surface of the substrate 91. The electrodes 92n and 92p are provided and configured.
The mounting substrate 9 is formed in a size that includes the light emitting element 1 in a plan view. The wiring electrode 92n is joined to the n-side electrode 13, and the wiring electrode 92p is joined to the p-side electrode 15 by using an adhesive member 93 such as solder having conductivity.
Further, on the upper surface of the mounting substrate 9, a light reflecting member 2 that covers the side surface of the light emitting element 1 is provided so that the lower surface thereof is in close contact with the upper surface. Further, the exposed portions of the wiring electrodes 92n and 92p are used as connection terminals with the outside.

The mounting board 9 is not an essential configuration and may be omitted. When the mounting substrate 9 is not provided, a CSP (Chip Size Package or Chip Scale Package) type light emitting device is provided by providing, for example, a plated terminal as an external connection electrode on the n-side electrode 13 and the p-side electrode 15, respectively. Can also be configured (see the fourth embodiment described later).

[Operation of light emitting device]
Next, the operation of the light emitting device 100 will be described with reference to FIG. 1 (see FIG. 2 as appropriate).
For convenience of explanation, the light emitting element 1 emits blue light, and the wavelength conversion member 3 absorbs blue light and emits yellow light.

In the light emitting device 100 shown in FIG. 1, when a current is supplied from an external power source between the n-side electrode 13 and the p-side electrode 15 via the wiring electrodes 92n and 92p of the mounting substrate 9, the active layer of the light-emitting element 1 is formed. 12a emits blue light.
The blue light emitted by the active layer 12a of the light emitting element 1 propagates in the semiconductor laminate 12 and the growth substrate 11 of the light emitting element 1 and is incident on the wavelength conversion member 3 from the upper surface of the light emitting element 1. Further, the light propagating in the light emitting element 1 in the lateral direction is reflected in the light emitting element 1 by the light reflecting member 2, and the light propagating downward is reflected upward by the front surface electrode 14 or the like, which is a light extraction surface. It is incident on the wavelength conversion member 3 from the growth substrate 11 side of the light emitting element 1.
The light propagating toward the side surface of the light emitting element 1 is efficiently reflected mainly by the first layer 21 of the light reflecting member 2. Further, the light transmitted through the first layer 21 is also reflected by the second layer 22.

A part of the blue light incident on the wavelength conversion member 3 is absorbed by the phosphor contained in the wavelength conversion member 3, is wavelength-converted to yellow light, and is taken out to the outside of the light emitting device 100. Further, at least a part of the other light incident on the wavelength conversion member 3 is taken out of the light emitting device 100 as blue light without being absorbed by the phosphor. Then, from the light emitting device 100, white light in which yellow light and blue light are mixed is taken out to the outside.

[Manufacturing method of light emitting device]
Next, a method of manufacturing the light emitting device 100 according to the first embodiment shown in FIG. 1 will be described with reference to FIGS. 4 to 8.
As shown in FIG. 4, the manufacturing method of the light emitting device 100 includes a semiconductor light emitting element preparation step S101, a mounting substrate preparation step S102, a semiconductor light emitting element mounting step S103, a first layer forming step S104, and a second layer forming. A step S105, a light reflecting member removing step S106, a wavelength conversion member forming step S107, and an individualization step S108 are included. The light reflecting member forming step is composed of the first layer forming step S104, the second layer forming step S105, and the light reflecting member removing step S106.

First, in the semiconductor light emitting device preparation step S101, the individualized light emitting element 1 having the configuration shown in FIG. 2 is prepared. An example of a process for manufacturing the light emitting element 1 will be described below, but the semiconductor light emitting element preparation step S101 may be performed by obtaining a commercially available light emitting element 1.

Specifically, first, a semiconductor laminate 12 in which an n-type semiconductor layer 12n, an active layer 12a, and a p-type semiconductor layer 12p are sequentially laminated is formed on a growth substrate 11 made of sapphire or the like by using the above-mentioned semiconductor material. do.
When the semiconductor laminate 12 is formed, all of the p-type semiconductor layer 12p and the active layer 12a and a part of the n-type semiconductor layer 12n are removed by etching for a part of the surface of the semiconductor laminate 12. The n-type semiconductor layer 12n forms a stepped portion 12b exposed on the bottom surface.

Next, in the region serving as the light emitting region having the p-type semiconductor layer 12p and the active layer 12a, a light-reflecting full-surface electrode 14 is formed so as to cover substantially the entire upper surface of the p-type semiconductor layer 12p.
Next, the surface of the wafer is provided with openings 16n and 16p in the region where the n-side electrode 13 and the n-type semiconductor layer 12n are connected and the region where the p-side electrode 15 and the entire surface electrode 14 are connected. An insulating film 16 such as _{SiO 2} is formed on the entire surface by, for example, a sputtering method.
Next, the n-side electrode 13 which is a pad electrode is formed so as to extend from the opening 16n to the upper surface of the insulating film 16. Further, the p-side electrode 15 which is a pad electrode is formed so as to extend from the opening 16p to the upper surface of the insulating film 16.

As a result, the light emitting element 1 in the wafer state is formed.
Next, the light emitting element 1 in a wafer state can be divided into a predetermined divided region by a dicing method, a scribe method, or the like to produce an individualized light emitting element 1.
Before cutting the wafer, the back surface of the growth substrate 11 may be polished to make it thinner. Thereby, it can be easily divided.

Next, in the mounting board preparation step S102, the mounting board 9 as shown in FIG. 5 is prepared. In the example shown in FIG. 5, the substrates 91 of the plurality of mounting substrates 9 are prepared in the state of the collective substrate 90 in which the substrates 91 are continuously formed. Further, in the present embodiment, a plurality of light emitting devices 100 are simultaneously formed on the collective substrate 90 until they are individualized in the individualizing step S108.
As shown in FIG. 5, the assembly board 90 is configured by arranging six mounting boards 9 in the vertical direction and three mounting boards 9 in the horizontal direction. In FIG. 5, the regions of the individual mounting boards 9 are shown divided by the boundary line 81 and the boundary line 82. Further, the assembly substrate 90 is formed with a groove 91a that penetrates the substrate 91 in the thickness direction along the boundary line 82, and the mounting substrate 9 is separated in advance in the lateral direction. Further, a pair of wiring electrodes 92n and 92p are provided corresponding to the individual mounting substrates 9 so as to extend from the upper surface of the substrate 91 to the lower surface side via the groove 91a, respectively. The rectangular regions of the wiring electrodes 92n and 92p provided in the central portion on the upper surface side of the substrate 91 are the connecting portions 92na and 92pa for connecting to the n-side electrode 13 and the p-side electrode 15 of the light emitting element 1. ..
Further, the regions provided at both ends of the base 91 of the wiring electrodes 92n and 92p in the longitudinal direction serve as regions for connecting to the outside at the time of secondary mounting.

The semiconductor light emitting element preparation step S101 and the mounting substrate preparation step S102 may be performed first, or may be performed in parallel. Further, the mounting substrate 9 may be prepared in an individualized state instead of the assembled substrate 90 state. Further, the wiring electrodes 92n and 92p of the mounting substrate 9 are electrically connected so that the regions provided on the upper surface and the lower surface of the substrate 91 are electrically connected through the through holes penetrating in the thickness direction of the substrate 91. May be good. Furthermore, the wiring electrodes 92n and 92p of the mounting substrate 9 may be provided only on the upper surface side of the substrate 91.

Next, in the semiconductor light emitting element mounting step S103, the light emitting element 1 is mounted on the mounting substrate 9 as shown in FIG.
As shown in FIG. 6, a conductive adhesive member 93 such as solder is used to join the n-side electrode 13 and the connection portion 92na of the wiring electrode 92n, and the p-side electrode 15 and the wiring electrode 92p are connected. The light emitting element 1 is flip-chip mounted on the mounting substrate 9 by joining the portion 92pa.

Next, in the light reflecting member forming step, the light reflecting member 2 is formed on the side surface of the light emitting element 1. As described above, this step includes a first layer forming step S104, a second layer forming step S105, and a light reflecting member removing step S106.

First, in the first layer forming step S104, as shown in FIG. 7A, the first layer 21 of the light reflecting member 2 is formed so as to cover the side surface of the light emitting element 1.
Note that FIG. 7A shows a cross section at a position corresponding to lines III-III of FIG. 6A. The same applies to FIGS. 7 (b) to 7 (d).

In the present embodiment, as shown in FIG. 7A, a spray device 61 is used to inject a spray 62 of a slurry containing a thermosetting resin and particles of a light-reflecting substance in a solvent to emit light. A coating film is formed on the surface of the element 1. Further, by heating the coating film to cure the thermosetting resin, the first layer 21 in which the particles of the light-reflecting substance are firmly bonded to each other is formed.

Further, before applying the above-mentioned slurry, a masking tape 63 is attached to the upper surface of the mounting substrate 9 except for the mounting location of the light emitting element 1 and its vicinity, and the tape 63 is removed after the application work is completed. do. As a result, it is possible to prevent the coating film from being formed on the upper surface of the mounting substrate 9 in the region for connecting to the outside of the wiring electrodes 92n and 92p.
In this step, in addition to the side surface of the light emitting element 1, a coating film is formed on the upper surface of the light emitting element 1 and a part of the upper surface of the mounting substrate 9 in the vicinity of the light emitting element 1.

Further, in the present embodiment, the tape 63 is provided so as not to cover the region where the first layer 21 and the second layer 22 are formed. Then, the tape 63 is not removed in this step, and is used as it is as a frame body when forming the second layer 22 in the second layer forming step S105 which is the next step.
The tape 63 is not particularly limited as long as it has chemical resistance to the solvent used in the slurry and the like and can be removed by peeling or dissolution with an appropriate chemical.

As a method for forming the first layer 21, various coating methods such as an inkjet method, a potting method, and a screen printing method can be used in addition to the spray method described above, but particles of a light-reflecting substance having a high content rate can be used. The spray method is preferable as a method for applying the resin material containing the above with high accuracy. In particular, the pulse spray method, which is a coating method in which the spray 62 is sprayed in a pulsed manner, that is, intermittently, is more preferable because the coating film can be formed with a more accurate film thickness.

Here, the pulse spray method will be described.
In the pulse spray method, since the injection amount can be reduced, the coating amount by one spray application can be reduced to form a thin film. Then, by repeating the spray coating a plurality of times, the coating film can be formed with an accurate film thickness. Further, a thermosetting resin is used as a resin material, and a thermosetting resin is temporarily cured every one coating or every predetermined number of times (for example, three times) of application during a plurality of spray coatings. As a result, it is possible to prevent the film thickness from becoming non-uniform due to liquid dripping or the like, and to form a coating film with high uniformity and good film thickness accuracy.
Here, the temporary curing means that by heating at a temperature lower than the curing temperature of the thermosetting resin, the slurry containing the thermosetting resin is cured to the extent that the fluidity is lost.

The slurry applied by the spray device 61 contains a solvent, a thermosetting resin, and particles of a light-reflecting substance phosphor. Further, this slurry is adjusted to an appropriate viscosity within a range in which spray injection is possible.
As the thermosetting resin, the above-mentioned resin material can be used. As the solvent, an organic solvent such as n-hexane, n-heptane, toluene, or acetone can be used.

The pulse spray method and the spray device suitable for applying the slurry are described in detail in, for example, Reference 1 and Reference 2, and further description thereof will be omitted.
(Reference 1) Japanese Patent Application Laid-Open No. 61-161175 (Reference 2) Japanese Patent Application Laid-Open No. 2003-300000

Next, in the second layer forming step S105, as shown in FIG. 7B, the second layer 22 is formed so as to cover the outside of the first layer 21. At this time, the tape 63 used in the first layer forming step S104, which is the previous step, is used as a frame to form a resin layer having a lower content of particles of the light-reflecting substance than the first layer 21. Further, the second layer 22 is formed with a thickness equal to or higher than the upper surface of the light emitting element 1. Further, after forming the second layer 22, the tape 63 is removed.

As the method for forming the second layer 22, the coating methods listed as the method for forming the first layer 21 can be used. When the second layer 22 is formed by a screen printing method, a molding method using a mold, or the like, the tape 63 can be removed in advance.

When a thermosetting resin is used for the first layer 21 and the second layer 22, the first layer 21 is temporarily cured in the first layer forming step S104, and the second layer 22 and the second layer 22 are temporarily cured in the second layer forming step S105. It is preferable that the 1st layer 21 is finally cured. As a result, the first layer 21 and the second layer 22 can be joined more firmly.
Here, the main curing means that the thermosetting resin is completely cured by heating at a temperature equal to or higher than the curing temperature of the thermosetting resin.

Next, in the light reflecting member removing step S106, the light reflecting member 2 (first layer 21 and second layer) reaches the height of the cutting line 71 shown in FIG. 7B, that is, the height of the upper surface of the light emitting element 1. 22) is removed using a cutting device. As a result, as shown in FIG. 7C, the upper surface of the light emitting element 1 which is the light extraction surface is exposed, and the light reflecting member 2 is patterned so as to cover only the side surface of the light emitting element 1.

Next, in the wavelength conversion member forming step S107, as shown in FIG. 7D, the wavelength conversion member 3 is formed on the upper surface of the light emitting element 1 and the upper surface of the light reflecting member 2. The wavelength conversion member 3 can be formed by the same method as the method for forming the first layer 21 or the second layer 22 of the light reflecting member 2 described above. In the example shown in FIG. 7D, a spray device 64 is used to spray a spray 65 of a slurry containing a thermosetting resin and particles of a phosphor (wavelength conversion substance) in a solvent to form a coating film. By forming, the wavelength conversion member 3 is formed.
When the wavelength conversion member 3 is formed by the spray method, it is preferable to remove the upper surfaces of the light emitting element 1 and the light reflecting member 2 and cover them with, for example, masking tape.

Further, the wavelength conversion member 3 is separately produced as a plate-shaped member having a predetermined shape, and is provided by adhering to the upper surfaces of the light emitting element 1 and the light reflecting member 2 using a light-transmitting adhesive. You may.

Next, in the individualization step S108, as shown in FIG. 8A, the light emitting device 100 is individualized by cutting the mounting substrate 9 and the light reflecting member 2 along the boundary line 81. As described above, since the mounting substrate 9 is separated from the light emitting device 100 adjacent in the lateral direction by the groove 91a provided along the boundary line 82, the cutting operation along the boundary line 82 Is unnecessary.

<Second Embodiment>
[Configuration of light emitting device]
Next, the light emitting device according to the second embodiment will be described with reference to FIG.
As shown in FIG. 9, in the light emitting device 100A according to the second embodiment, the wavelength conversion member 3 is provided only on the upper surface of the light emitting element 1 with respect to the light emitting device 100 according to the first embodiment shown in FIG. That, the transparent layer 7 is provided on the upper surface of the wavelength conversion member 3, and the light reflecting member 2 is provided up to a height that covers the side surfaces of the wavelength conversion member 3 and the transparent layer 7. Is different.
In the light emitting device 100A, since the wavelength conversion member 3 is provided in the same region as the upper surface of the light emitting element 1 in a plan view and the side surface is further covered with the light reflecting member 2, light is emitted in the front direction (upward direction in FIG. 9). The brightness can be increased.

The transparent layer 7 is a film provided so as to cover the entire upper surface of the wavelength conversion member 3 and formed by using a translucent resin material. As the resin material, the same resin material as that used for the light reflecting member 2 or the wavelength conversion member 3 can be used.
The transparent layer 7 optically exposes the wavelength conversion member 3 without damaging the wavelength conversion member 3 when removing the upper portion of the light reflection member 2 in the light reflection member removing step S206 (see FIG. 10). It is a film to make it. Details of the process will be described later.

In the light emitting device 100A, light is taken out to the outside through the transparent layer 7. Other than that, the light emitting device 100A operates in the same manner as the light emitting device 100, and therefore detailed description thereof will be omitted.

[Manufacturing method of light emitting device]
Next, a method of manufacturing the light emitting device 100A according to the second embodiment shown in FIG. 9 will be described with reference to FIGS. 10 and 11.
As shown in FIG. 10, the manufacturing method of the light emitting device 100A includes a semiconductor light emitting element preparation step S201, a mounting substrate preparation step S202, a semiconductor light emitting element mounting step S203, a first layer forming step S204, and a second layer forming. A step S205, a light reflecting member removing step S206, and an individualization step S207 are included.
In the present embodiment, the step of forming the wavelength conversion member 3 is included in the semiconductor light emitting device preparation step S201. Hereinafter, the steps different from those of the first embodiment will be described in detail with reference to FIG.

First, in the semiconductor light emitting device preparation step S201, the light emitting element 1 is prepared in the same manner as in the semiconductor light emitting device preparation step S101 in the first embodiment. Further, in this step, before the light emitting element 1 is fragmented, the wavelength conversion member 3 and the transparent layer 7 are sequentially laminated on the surface on the growth substrate 11 side by a spray method or the like. Then, by cutting the wavelength conversion member 3 and the transparent layer 7 together with the light emitting element 1, the individualized light emitting element 1A with the wavelength conversion member 3 and the transparent layer 7 is prepared.
Since the mounting board preparation step S202 is the same as the mounting board preparation step S102 in the first embodiment, the description thereof will be omitted.

Next, in the semiconductor light emitting device mounting step S203, as shown in FIG. 11A, the light emitting element 1A with the wavelength conversion member 3 and the transparent layer 7 is used for wiring with the n-side electrode 13 using the adhesive member 93. Flip-chip mounting is performed on the mounting substrate 9 by joining the connecting portion 92na of the electrode 92n and joining the p-side electrode 15 and the connecting portion 92pa of the wiring electrode 92p.

Next, the first layer forming step S204 and the second layer forming step S205 are performed in the same manner as the first layer forming step S104 and the second layer forming step S105 in the first embodiment, respectively. As a result, as shown in FIG. 11B, the light reflecting member 2 is formed so as to cover the side surface and the upper surface of the light emitting element 1A.

Next, in the light reflecting member removing step S206, the light reflecting member 2 is removed by cutting to the height of the cutting line 73 shown in FIG. 11B. As a result, as shown in FIG. 11C, the upper surface of the wavelength conversion member 3, which is the light extraction surface, is optically exposed from the light reflection member 2. Here, optically exposing means that the transparent layer 7 may be interposed on the upper surface side of the wavelength conversion member 3.

The height of the cutting line 73 is set between the lower end and the upper end of the transparent layer 7. Although it depends on the construction method, it is easier to obtain higher film thickness accuracy in the wavelength conversion member 3 formed by the spray method or the like than in the film thickness accuracy by cutting. Therefore, if the wavelength conversion member 3 formed on the upper surface of the light emitting element 1 with high film thickness accuracy is damaged by cutting, the color tone is partially or totally changed.

Therefore, in the present embodiment, the transparent layer 7 is provided, and the light reflecting member 2 is removed by cutting within the thickness range of the transparent layer 7 to optically expose the light extraction surface from the light reflecting member 2. It is a thing.
The film thickness of the transparent layer 7 can be set so as to be thicker than the processing accuracy according to the processing accuracy of cutting.

Since the individualization step S207 can be performed in the same manner as the individualization step S108 in the first embodiment, the description thereof will be omitted.
As a result, the light emitting device 100A shown in FIG. 9 is formed.

<Third Embodiment>
[Configuration of light emitting device]
Next, the light emitting device according to the third embodiment will be described with reference to FIG.
As shown in FIG. 12, the light emitting device 100B according to the third embodiment includes a light reflecting member 2B instead of the light reflecting member 2 with respect to the light emitting device 100 according to the first embodiment shown in FIG. Is different. In the light reflecting member 2B, the first layer 21B is provided on the side surface of the light emitting element 1 via the resin rich layer 23.

The first layer 21B is formed by containing a light-reflecting substance at a high content rate, similarly to the first layer 21 in the first embodiment. If the particles of the light-reflecting substance are contained in a high content (for example, 95% by mass or more), sufficient adhesion to the light emitting element 1 may not be obtained. Therefore, in the present embodiment, a resin-rich layer 23 having a low content of light-reflecting substances, in other words, a large amount of resin components, is provided between the first layer 21B and the light-emitting element 1 to improve the adhesion between the two. Is.

As the resin rich layer 23, the same resin material as the light reflecting member 2 in the first embodiment can be used. Further, the light-reflecting substance does not have to be contained, and when it is contained, the content should be lower than that of the first layer 21B, and should be about the same as that of the second layer 22 or lower than that of the second layer 22. Is preferable. Further, the resin-rich layer 23 is preferably made into a thin film within a range in which the first layer 21B and the light emitting element 1 can be brought into good contact with each other so that the efficiency of light reflection by the first layer 21B is high. Therefore, the film thickness of the resin-rich layer 23 is preferably about the same as that of the first layer 21B or thinner than that of the first layer 21B. Specifically, the film thickness of the resin-rich layer 23 is preferably 1 μm or more and 10 μm or less.

Further, the resin rich layer 23 can be formed by using various coating methods in the same manner as the method for forming the first layers 21 and 21B described above. In order to form the resin-rich layer 23 more uniformly with a thin film, the pulse spray method is particularly preferable.

Since the light emitting device 100B operates in the same manner as the light emitting device 100 according to the first embodiment, the description of the operation will be omitted.

[Manufacturing method of light emitting device]
The light emitting device 100B forms the resin rich layer 23 after the semiconductor light emitting device mounting step S103 and before the first layer forming step S104 in the method for manufacturing the light emitting device 100 according to the first embodiment. It can be manufactured by carrying out the same steps as described above.
Specifically, before forming the first layer 21B in the first layer forming step S104, the resin rich layer 23 is formed so as to cover the surface of the light emitting element 1 by a spray method or the like.

When a thermosetting resin is used as the resin material for the resin-rich layer 23 and the first layer 21B, after the resin-rich layer 23 is applied to the surface of the light emitting element 1, the coating film is naturally dried or temporarily cured. It is preferable that the first layer 21B is applied and then the main curing is performed. As a result, the light emitting element 1 and the first layer 21B can be more firmly adhered to each other via the resin rich layer 23. Since the other steps are the same as those in the first embodiment, the description thereof will be omitted.
As a result, the light emitting device 100B shown in FIG. 12 is formed.

The configuration in which the first layer 21B is provided on the side surface of the light emitting element 1 via the resin rich layer 23 can also be applied to the light emitting device 100A according to the second embodiment.

<Fourth Embodiment>
[Configuration of light emitting device]
Next, the configuration of the light emitting device according to the fourth embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 13, the light emitting device 100C according to the fourth embodiment includes a light emitting element 1C, a light reflecting member 2C, a wavelength conversion member 3, a translucent member 4, a support member 5, and an external connection. It is configured to include electrodes 6n and 6p.
The light emitting device 100C includes a translucent member 4 provided on the side surface of the light emitting element 1C with the light emitting device 100 shown in FIG. 1, and the light reflecting member 2C is the light emitting element 1C via the translucent member 4. It differs in that it is provided so as to cover the side surface.

The light emitting device 100C is also different from the light emitting device 100 in the following points.
The light emitting device 100C includes external connection electrodes 6n and 6p and a support member 5 in place of the mounting substrate 9 which is a submount, and constitutes a CSP type package. Further, the light emitting element 1C used in the light emitting device 100C has a substantially square shape in a plan view.
The same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.

The light emitting element 1C has a cross-sectional structure similar to that of the light emitting element 1 shown in FIG. 2, although the outer shape is different from that of the light emitting element 1 shown in FIG. 1, and is a flip chip mounting type LED chip. Further, the plan view shape of the light emitting element 1C is not particularly limited, and may be rectangular like the light emitting element 1.
Further, a translucent member 4 is provided on the side surfaces of the semiconductor laminate 12 and the growth substrate 11 (see FIG. 2), which are the side surfaces of the light emitting element 1C.
Further, on the lower surface side of the light emitting element 1C, an external connection electrode 6n electrically connected to the n-side electrode 13 and an external connection electrode 6p electrically connected to the p-side electrode 15 are arranged in a plan view. A support member 5 is provided so as to surround the external connection electrodes 6n and 6p.

The translucent member 4 is provided so as to be in contact with the side surface of the light emitting element 1C and surround the outer periphery of the light emitting element 1 in a plan view, and reflect the light emitted from the side surface of the light emitting element 1C in the upward direction, which is the light extraction direction. It is a fillet to make you. Therefore, the translucent member 4 has an outer surface that is reversely inclined so as to be outward in a plan view toward the upper side, which is the light extraction surface direction in the thickness direction of the light emitting element 1. By providing such a translucent member 4, the light emitted from the side surface of the light emitting element 1C can be efficiently taken out to the outside.
In the example shown in FIG. 13B, the outer surface of the translucent member 4 is formed of a flat surface so that its cross-sectional shape is straight, but the present invention is not limited to this, and is convex downward. It may be an outer surface that is curved in a shape or convexly upward.

Further, the outer surface of the translucent member 4 is covered with the first layer 21C of the light reflecting member 2C, and the wavelength conversion member 3 is continuous from the upper surface of the light emitting element 1 on the upper surface of the translucent member 4. Is provided. The light emitted from the upper surface of the translucent member 4 is taken out to the outside via the wavelength conversion member 3.

The translucent member 4 can be formed of a material such as resin or glass having good translucency. Further, the translucent member 4 is preferably formed by using a material having a higher refractive index than the resin material used for the first layer 21C of the light reflecting member 2C. By forming the translucent member 4 with a material having a higher refractive index than the resin material of the first layer 21C, light is efficiently reflected on the outer surface which is the interface with the first layer 21C based on Snell's law. Can be made to.
Further, the translucent member 4 can be formed by supplying a liquid or paste-like resin material to the side surface of the light emitting element 1C using, for example, a dispenser and then curing the resin material.

The light reflecting member 2C has a two-layer structure of a first layer 21C and a second layer 22C, is provided so as to cover the outer surface of the translucent member 4, and is provided so as to cover the outer surface of the translucent member 4. The light emitted from the light is reflected by the translucent member 4. That is, the light reflecting member 2C is provided so as to cover the side surface of the light emitting element 1C via the translucent member 4. Therefore, the first layer 21C is provided so as to cover the outer surface of the translucent member 4, and the second layer 22C is provided so as to cover the outer surface of the first layer 21C.
Further, in the example shown in FIG. 13B, the lower surface of the light reflecting member 2C is provided so as to have the same height as the lower surface of the supporting member 5.
The first layer 21C and the second layer 22C can be formed by the same method using the same materials as the first layer 21 and the second layer 22 of the first embodiment, respectively.

The wavelength conversion member 3 is provided so as to cover the upper surface of the light emitting element 1, the upper surface of the translucent member 4, and the upper surface of the light reflecting member 2. Since the wavelength conversion member 3 is different from the first embodiment only in its outer shape, detailed description thereof will be omitted.

The support member 5 is provided on the lower surface side of the light emitting element 1C, which is the electrode forming surface, so as to surround the external connection electrodes 6n and 6p in a plan view, and is a member for supporting the external connection electrodes 6n and 6p. Is. The support member 5 can be formed by using a resin material having an insulating property. In particular, it is preferable to use a photosensitive resin material used as a photoresist because the support member 5 can be patterned by a photolithography method. Further, since the support member 5 is provided around the external connection electrodes 6n and 6p, it is preferable to use a material having good heat resistance so as not to be deformed or deteriorated when mounting using an adhesive member such as solder. .. For example, a resin material based on a silicone resin, an epoxy resin, a polyimide resin, or the like can be preferably used.

The external connection electrodes 6n and 6p are electrode terminals for connecting the light emitting element 1C to an external power source. The upper surface of the external connection electrode 6n is electrically connected to the n-side electrode 13, and the lower surface is a connection portion for connecting to the outside. Similarly, the upper surface of the external connection electrode 6p is electrically connected to the p-side electrode 15, and the lower surface is a connection portion for connecting to the outside.
The external connection electrodes 6n and 6p can be formed, for example, as plating posts by electrolytic plating. Further, the external connection electrodes 6n and 6p can also be formed by using a metal wire. As the external connection electrodes 6n and 6p, for example, it is preferable to use a metal material having good conductivity and thermal conductivity such as Cu and Au.

[Operation of light emitting device]
Next, the operation of the light emitting device 100C will be described with reference to FIG. 13 (see FIG. 2 as appropriate).
For convenience of explanation, it is assumed that the light emitting element 1C emits blue light and the wavelength conversion member 3 absorbs blue light and emits yellow light.

In the light emitting device 100C shown in FIG. 13, when a current is supplied between the n-side electrode 13 and the p-side electrode 15 from an external power source via the external connection electrodes 6n and 6p, the active layer 12a of the light-emitting element 1C becomes blue. It emits light.
The blue light emitted by the active layer 12a of the light emitting element 1C propagates in the semiconductor laminate 12 and the growth substrate 11 of the light emitting element 1C, and is taken out from the upper surface of the light emitting element 1C via the wavelength conversion member 3. Further, the light propagating in the light emitting element 1C in the lateral direction is incident on the translucent member 4, is reflected upward on the outer surface provided with the light reflecting member 2C on the outside, and is reflected to the outside through the wavelength conversion member 3. Taken out to. Further, the light propagating downward in the light emitting element 1C is reflected upward by the full surface electrode 14 and the like, and is taken out to the outside through the wavelength conversion member 3.

A part of the blue light incident on the wavelength conversion member 3 is converted into yellow light by the wavelength conversion member 3, and at least the other part of the blue light remains blue light without being wavelength-converted. Taken out. Then, from the light emitting device 100C, white light in which yellow light and blue light are mixed is taken out to the outside.

[Manufacturing method of light emitting device]
Next, a method of manufacturing the light emitting device 100C according to the fourth embodiment shown in FIG. 13 will be described with reference to FIG.
As shown in FIG. 14, the manufacturing method of the light emitting device 100C includes a semiconductor light emitting element preparation step S301, a semiconductor light emitting element mounting step S302, a translucent member forming step S303, a first layer forming step S304, and a first layer. The two-layer forming step S305, the light reflecting member removing step S306, the sheet removing step S307, the wavelength conversion member forming step S308, and the individualizing step S309 are included. The light reflecting member forming step is composed of the first layer forming step S304, the second layer forming step S305, and the light reflecting member removing step S306.

First, in the semiconductor light emitting element preparation step S301, the support member 5 and the external connection electrodes 6n and 6p are provided, and the light emitting element 1C in an individualized state is prepared.
Therefore, first, the light emitting element 1C is formed by the same procedure as the semiconductor light emitting device preparation step S101 (see FIG. 4) in the first embodiment.
Next, the support member 5 is formed on the electrode forming surface side of the light emitting element 1C by a photolithography method using a photoresist. At this time, the support member 5 is patterned so as to have an opening in the region where the external connection electrodes 6n and 6p are formed.
Next, a metal film to be a seed layer for electrolytic plating is formed on the support member 5 including the inside of the above-mentioned opening by, for example, a sputtering method.
Next, by performing electrolytic plating using this seed layer as a current path, a metal plating layer is formed as external connection electrodes 6n and 6p in the opening of the support member 5.
Next, by cutting the upper surfaces of the support member 5 and the metal plating layer to a predetermined height, a light emitting element 1C provided with the support member 5 and external connection electrodes 6n and 6p is formed.
The support member 5 and the external connection electrodes 6n and 6p may be formed by a wafer level process, and the light emitting element 1C may be separated after forming these members.

Next, in the semiconductor light emitting device mounting step S302, as shown in FIG. 15, the light emitting element 1C provided with the support member 5 and the external connection electrodes 6n and 6p on the sheet 66 having adhesiveness on the surface is placed. The growth substrate 11 and the semiconductor laminate 12 side are placed facing downward. In the example shown in FIG. 15A, the light emitting elements 1C are placed so that three elements in the vertical direction and three elements in the horizontal direction are arranged at predetermined intervals. The number of light emitting elements 1C to be mounted may be one, and a larger number of light emitting elements 1C may be arranged.
Further, in FIG. 15A, the regions for partitioning the individual light emitting devices 100C are shown by the boundary lines 81 and 82.

Next, in the translucent member forming step S303, as shown in FIG. 16, the side surface of the light emitting element 1C, that is, the side surface of the growth substrate 11 and the semiconductor laminate 12 is surrounded by the outer periphery of the light emitting element 1C in a plan view. The translucent member 4 is formed on the surface.
The translucent member 4 can be formed, for example, by supplying a translucent resin material so as to be in contact with the side surface of the light emitting element 1C using a dispenser or the like, and then curing the resin material. The translucent member 4 is preferably an inclined surface whose outer surface is inclined so as to be outward toward the light extraction direction (lower surface side of the light emitting element 1C in FIG. 16B) in a plan view. Such a shape is obtained by supplying a resin material having an appropriate viscosity to the corner portion formed by the lower surface of the growth substrate 11 of the light emitting element 1C and the upper surface of the sheet 66, and curing the shape so as to expand downward by gravity. Can be formed. Further, the shape of the outer surface may be molded and cured by using a mold.

Next, in the light reflecting member forming step, the light reflecting member 2C is formed so as to cover the outer surface of the translucent member 4. As described above, this step includes a first layer forming step S304, a second layer forming step S305, and a light reflecting member removing step S306.

First, in the first layer forming step S304, as shown in FIG. 17A, the first layer 21C of the light reflecting member 2C is formed so as to cover the outer surface of the translucent member 4. The first layer 21C is formed by using the spray device 61 in the same manner as in the first embodiment. In this step, the first layer 21C is formed by applying the first layer 21C to the entire surface of the translucent member 4, the support member 5, and the external connection electrodes 6n and 6p provided on the sheet 66.
Note that FIG. 17A shows a cross section at a position corresponding to the VV line in FIG. 15A. The same applies to the other figures of FIG. 17 (b) and each figure of FIG.

Next, in the second layer forming step S305, as shown in FIG. 17B, the second layer 22C is formed so as to cover the outside of the first layer 21C. At this time, a resin layer having a lower content of particles of the light-reflecting substance than the first layer 21C is formed. Further, the second layer 22C is formed with a thickness equal to or higher than the upper surface of the external connection electrodes 6n and 6p.
As a method for forming the second layer 22C, the same method as in the first embodiment can be used, and thus the description thereof will be omitted.

Next, in the light reflecting member removing step S306, the light reflecting member 2C (first layer 21C) reaches the height of the cutting line 72 shown in FIG. 17B, that is, the height of the upper surface of the external connection electrodes 6n and 6p. And the second layer 22C) is removed using a cutting device. As a result, as shown in FIG. 17C, the upper surface of the external connection electrodes 6n and 6p to be connected to the outside is exposed, and the light reflecting member 2 has the light reflecting member 2C on the side surface of the light emitting element 1. It is patterned to cover through.

Next, in the sheet removing step S307, as shown in FIG. 17D, the sheet 66 which is the support of the light emitting element 1C is removed. At this time, since the plurality of light emitting elements 1C are connected to each other by the light reflecting member 2C, the array state can be maintained even if the sheet 66 is removed.

Next, in the wavelength conversion member forming step S308, as shown in FIG. 18A, the wavelength conversion member 3 is formed on the light extraction surface side of the light emitting element 1C and the translucent member 4. In FIG. 18A, the light emitting element 1C is arranged so as to be upside down from FIG. 17D. Therefore, in FIG. 18A, the light extraction surface of the light emitting element 1C is on the upper surface side.
Further, since the wavelength conversion member 3 can be formed in the same manner as in the first embodiment, detailed description thereof will be omitted.

Next, in the individualization step S309, as shown in FIG. 18B, the wavelength conversion member 3 and the light reflecting member 2C are cut along the boundary line 82 and the boundary line 81 (see FIG. 15A). By doing so, the light emitting device 100C is separated into individual pieces.
As a result, the light emitting device 100C shown in FIG. 13 is formed.

<Fifth Embodiment>
[Configuration of light emitting device]
Next, the configuration of the light emitting device according to the fifth embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 19, the light emitting device 100D according to the fifth embodiment has a light emitting member 4D instead of the translucent member 4 with respect to the light emitting device 100C according to the fourth embodiment shown in FIG. Is different.

In the light emitting device 100D, the translucent member 4D is provided so as to integrally cover the upper surface in addition to the side surface of the light emitting element 1C. Therefore, the wavelength conversion member 3 is provided on the upper surface of the light emitting element 1 via the translucent member 4D.
Since other configurations are the same as those of the light emitting device 100C according to the fourth embodiment, the description thereof will be omitted.

In the light emitting device 100D, the light emitted by the light emitting element 1C and propagating upward in the light emitting element 1C is incident on the wavelength conversion member 3 via the translucent member 4D. Other than that, since it operates in the same manner as the light emitting device 100C according to the fourth embodiment, detailed description of the operation will be omitted.

[Manufacturing method of light emitting device]
Next, a method of manufacturing the light emitting device 100D according to the fifth embodiment shown in FIG. 19 will be described with reference to FIGS. 20 and 21.
As shown in FIG. 20, the manufacturing method of the light emitting device 100D includes a semiconductor light emitting element preparation step S401, a translucent member coating step S402, a semiconductor light emitting element mounting step S403, a first layer forming step S404, and a first layer. The two-layer forming step S405, the light reflecting member removing step S406, the sheet removing step S407, the wavelength conversion member forming step S408, and the individualizing step S409 are included. The light reflecting member forming step is composed of the first layer forming step S404, the second layer forming step S405, and the light reflecting member removing step S406.

The semiconductor light emitting device preparation step S401 is performed in the same manner as the semiconductor light emitting device preparation step S301 in the fourth embodiment.

Next, in the translucent member coating step S402, a region on which the light emitting element 1C on the sheet 66 is placed (FIG. 21 (FIG. 21)) by a coating method such as a potting method or an inkjet method, as shown in FIG. 21A. b)) is coated with a liquid resin material as the translucent member 4D. Here, the coating film of the liquid translucent member 4D is formed on the sheet 66 so as to be raised by surface tension.

Next, in the semiconductor light emitting device mounting step S403, the light emitting element 1C is mounted on the liquid translucent member 4D as shown in FIG. 21 (b). At this time, the light emitting element 1C is settled on the liquid translucent member 4D by its own weight, and the lower surface and the side surface are covered with the translucent member 4D. In the translucent member coating step S402, the coating range, coating amount, viscosity, etc. of the liquid translucent member 4D are adjusted so that the lower surface and the side surface of the light emitting element 1C are covered by the translucent member 4D. NS. In order to easily perform such adjustment, it is preferable to use a thermosetting resin as the translucent member 4D.
Further, the translucent member 4D is cured in a state where the light emitting element 1C is covered with the translucent member 4D on the lower surface and the side surface. When a thermosetting resin is used as the translucent member 4D, it can be cured by natural drying and / or heating.

The following first layer forming step S404, second layer forming step S405, light reflecting member removing step S406, and sheet removing step S407 are the first layer forming step S304, the second layer forming step S305, and light in the fourth embodiment, respectively. It is performed in the same manner as in the reflective member removing step S306 and the sheet removing step S307.

Next, in the wavelength conversion member forming step S408, as shown in FIG. 21C, the wavelength conversion member 3 is formed on the upper surface of the translucent member 4D which is the light extraction surface. Since the wavelength conversion member 3 can be formed in the same manner as in the wavelength conversion member forming step S308 in the fourth embodiment, detailed description thereof will be omitted.
In FIG. 21C, the light emitting element 1C after the sheet removing step S407 is arranged so that the surface on which the translucent member 4D is provided faces upward.

Next, in the individualizing step S409, the wavelength conversion member 3 and the light reflecting member 2C are formed along the boundary line 82 and the like shown in FIG. 21 (c) in the same manner as in the individualizing step S309 in the fourth embodiment. The light emitting device 100D is separated into individual pieces by cutting the light emitting device 100D.
As a result, the light emitting device 100D shown in FIG. 19 is formed.

<Modification example>
In the light emitting device 100 shown in FIG. 1, the light reflecting member 2 is a two-layer reflective layer in which the first layer 21 and the second layer 22 are laminated, and the first layer 21 and the second layer 22 are combined. , A plurality of sets may be alternately laminated to form a structure. Thereby, the light reflecting member 2 having a higher reflectance can be formed. Further, also in this case, it is preferable that the resin material used for the first layer 21 is configured to have a higher refractive index than the resin material used for the second layer. As a result, interfacial reflection based on Snell's law can be utilized, and the reflectance of the light reflecting member 2 can be further improved.

Similarly, in the light emitting devices 100A, 100B, 100C and 100D according to the other embodiments, a plurality of sets of the first layer 21 and the like and the second layer 22 and the like are alternately laminated in the light reflecting member 2 and the like. It may be configured as follows.

The light emitting device and the method for manufacturing the light emitting device according to the present invention have been specifically described above in terms of the mode for carrying out the invention, but the gist of the present invention is not limited to these descriptions and is within the scope of claims. It must be widely interpreted based on the description. Needless to say, various changes and modifications based on these descriptions are also included in the gist of the present invention.

1,1A, 1C light emitting element (semiconductor light emitting element)
11 Growth substrate 12 Semiconductor laminate 12n n-type semiconductor layer 12a Active layer 12pp-type semiconductor layer 12b Stepped portion 13 n-side electrode 14 Full-face electrode 15p-side electrode 16 Insulating film 2,2B, 2C Light reflecting member 21,21B, 21C 1st layer 22, 22C 2nd layer 23 Resin rich layer 3 Wavelength conversion member 4, 4D Translucent member 5 Support member 6n, 6p External connection electrode 7 Transparent layer 9 Mounting substrate (board)
90 Assembly board 91 Base 92n, 92p Wiring electrode 92na, 92pa Connection part 93 Adhesive member 61, 64 Spray device 62, 65 Spray 63 Tape 66 Sheet 71, 72, 73 Cutting line 81, 82 Boundary line 100, 100A, 100B, 100C, 100D light emitting device

Claims (6)

A board with a pair of wiring electrodes on the top surface,
A light emitting element mounted on the upper surface of the substrate and
A wavelength conversion member provided on the upper surface of the light emitting element and
A transparent layer provided on the upper surface of the wavelength conversion member and
A first layer made of a translucent resin containing a light-reflecting substance, which is provided on each side surface of the light emitting element, the wavelength conversion member, and the transparent layer and is provided on the upper surface of the transparent layer. A light-reflecting member provided on the first layer and having a second layer made of a translucent resin having a lower content of a light-reflecting substance than the first layer.
And the process of preparing the structure including
Look containing a removing a portion of a part and the transparent layer of the portion to said light reflecting member positioned between the top and bottom surfaces of the transparent layer from the upper surface side of the light reflecting member,
In the step of removing a part of the light reflecting member and a part of the transparent layer, a part of the first layer and a part of the second layer, which are a part of the light reflecting member, and a part of the transparent layer A part is a method for manufacturing a light emitting device in which the upper surface of the first layer and the upper surface of the second layer, which are the upper surfaces of the light reflecting member, and the upper surface of the transparent layer are removed so as to be flush with each other. The method for manufacturing a light emitting device according to claim 1, wherein the light reflecting member includes a silicone resin and TiO _2. The method for manufacturing a light emitting device according to claim 1 or 2, wherein the wavelength conversion member includes a phosphor that emits red light. The method for manufacturing a light emitting device according to claim 1 or 2, wherein the wavelength conversion member includes a phosphor that emits green light. The method for manufacturing a light emitting device according to claim 3 , wherein the phosphor that emits red light is a KSF-based phosphor. The method for manufacturing a light emitting device according to claim 4 , wherein the fluorescent substance that emits green light is a β-sialon fluorescent substance.

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