JP6749763B2 - インベストメント鋳造用の多孔質セラミック材料 - Google Patents
インベストメント鋳造用の多孔質セラミック材料 Download PDFInfo
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- JP6749763B2 JP6749763B2 JP2016008370A JP2016008370A JP6749763B2 JP 6749763 B2 JP6749763 B2 JP 6749763B2 JP 2016008370 A JP2016008370 A JP 2016008370A JP 2016008370 A JP2016008370 A JP 2016008370A JP 6749763 B2 JP6749763 B2 JP 6749763B2
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- 229910010293 ceramic material Inorganic materials 0.000 title claims description 8
- 239000000203 mixture Substances 0.000 claims description 140
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 43
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- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 4
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- YFCGDEUVHLPRCZ-UHFFFAOYSA-N [dimethyl(trimethylsilyloxy)silyl]oxy-dimethyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C YFCGDEUVHLPRCZ-UHFFFAOYSA-N 0.000 claims description 3
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 claims description 3
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- WJKVFIFBAASZJX-UHFFFAOYSA-N dimethyl(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C)(C)C1=CC=CC=C1 WJKVFIFBAASZJX-UHFFFAOYSA-N 0.000 claims description 3
- FBZANXDWQAVSTQ-UHFFFAOYSA-N dodecamethylpentasiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C FBZANXDWQAVSTQ-UHFFFAOYSA-N 0.000 claims description 3
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- CBVFSZDQEHBJEQ-UHFFFAOYSA-N 2,2,3-trimethylhexane Chemical compound CCCC(C)C(C)(C)C CBVFSZDQEHBJEQ-UHFFFAOYSA-N 0.000 claims 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
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- 239000005350 fused silica glass Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 125000005374 siloxide group Chemical group 0.000 description 1
- 238000007582 slurry-cast process Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- IGJPWUZGPMLVDT-UHFFFAOYSA-N tris(ethenyl)-tris(ethenyl)silyloxysilane Chemical compound C=C[Si](C=C)(C=C)O[Si](C=C)(C=C)C=C IGJPWUZGPMLVDT-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
式中、R及びR’は上記で定義した通りであり、xは3〜18の整数である。
式中、Rは上記で定義した通りであり、xは3〜18の整数である。
式中、xは3〜18の整数であり、各Rは、独立に、上記で定義したRのうち、バインダー液と実質的に反応する基(例えばアルケニル基又はヒドリド基など)以外のものとすることができる。環状シロキサンの一例はデカメチルシクロペンタシロキサン(当技術分野でD5とも呼ばれる。)であり、例えば、Momentive SF1202又はDow−Corning 245液として実質的に純粋な形態で市販されている。D5は、特に有益な安定性及び揮発性特性を有することが実験で判明しており、その入手性と相俟って、細孔形成剤としてのD5の使用はに魅力的な選択肢となる。別の例は、1,3,5−トリス(3,3,3−トリフルオロプロピル)トリメチルシクロトリシロキサンであり、当技術分野でD3 Fとして知られている。実質的に純粋な単一の成分に加えて、環状シロキサンの市販混合物も好適に使用でき、例えば、Dow−Corning 246、Dow−Corning 344、Dow−Corning 345、Dow−Corning 702、Momentive SF1204、Momentive SF1256、Momentive SF1257及びMomentive SF1258液が挙げられる。
以下の表1に記載の各成分を標記の割合で組合せて配合物Aを生成することによって、反応性シロキサンバインダー系及び粉体混合物を含むセラミックスラリー組成物を製造した。反応性シロキサンは、1,3,5,7−テトラビニル1,3,5,7−テトラメチルシクロテトラシロキサン(当技術分野でD4 Viとして知られる)及びヒドリド官能性有機シリケート樹脂(組成[HSi(CH3)2O1/2]2(SiO2)を有する式(VII)に対応するCAS登録番号68988−57−8、当技術分野でMHQ樹脂として知られる)であった。反応性シロキサンの質量比を、Si−H/ビニルモル比が約1:1となるように維持した。焼結時の非晶質シリカからクリストバライトへの変換を高めるため、無水四ホウ酸ナトリウムを鉱化剤としてさらに配合した。
同様のセラミック固形分63体積%のスラリー配合物及び透過性測定用の円筒形試験片及び長方形試験片を比較例の説明と同様の方法で調製・製造した。ただし、デカメチルシクロペンタシロキサン(D5)又は1,3,5−トリス(3,3,3−トリフルオロプロピル)トリメチルシクロトリシロキサン(当技術分野でD3 Fとして知られる)を細孔形成剤としてスラリー混合物に添加した。D5又はD3 Fを全スラリー体積の15%で含む配合物B及びCをそれぞれ調製し、それに応じて、未硬化混合物中のセラミック固形分添加量を63体積%に保つため、反応性シロキサン混合物の体積分率を減らした。
同様にセラミック固形分63体積%のスラリー配合物及び円筒形試験ディスクを比較例と同様の方法で製造した。ただし、デカメチルシクロペンタシロキサン(D5)又はシクロヘキサンを細孔形成剤としてスラリー混合物に添加した。D5又はシクロヘキサンを全スラリー体積の30%で含むサンプル配合物D及びEをそれぞれ調製し、それに応じて、未硬化混合物中のセラミック固形分添加量を63体積%に保つため、反応性シロキサン混合物の体積分率を減らした。対照サンプルFについては、加圧した乾燥セラミック粉体(シリカ、ジルコン及び四ホウ酸ナトリウム)の圧縮ペレットを、粒子の網目構造を理論密度67.5%まで焼結するために1050℃まで焼成して調製し、その透過性を理論上達成し得る最大透過率で表して試験した。
Claims (16)
- 多孔質セラミック構造体の製造方法であって、当該方法が、
液体と、上記液体中に配合される複数の粒子と、上記液体中に配合される触媒材料と、上記液体中に配合される細孔形成剤とを含む組成物であって、液体が1種以上のシロキサン種を含み、複数の粒子がセラミック材料を含み、細孔形成剤が、液体に対して不活性な薬剤を含んでいて、(a)1300g/モル未満の数平均分子量を有する含ケイ素剤、又は(b)上記液体に可溶性で1000g/モル未満の分子質量及び−40℃〜25℃の凝固点を有する分子或いはこれらの組合せのいずれかである、組成物を形成する工程と、
組成物を所望の形状に配置する工程と、
細孔形成剤の少なくとも一部を揮発させる工程と、
組成物を硬化して素地を形成する工程と、
素地を焼成する工程と
を含み、
細孔形成剤が組成物全体の7体積%〜35体積%の濃度で組成物中に存在し、かつ組成物中のセラミック粉体の量が30体積%〜70体積%である、方法。 - 液体の1種以上のシロキサン種が、アルケニル官能基、ヒドリド官能基又はそれらの組合せを含む、請求項1に記載の方法。
- 細孔形成剤が、シクロヘキサン、ベンゼン、p−キシレン、o−キシレン、シクロオクタン、シクロノナン、ビシクロヘキシル、トリデカン、ドデカン、3,4−ジクロロトルエン、シクロウンデカン、シクロヘプタン、2,2,3,3−テトラメチルペンタン、2,2,5,5−テトラメチルヘキサン又はこれらの1種以上を含む組合せを含む、請求項1又は請求項2に記載の方法。
- 細孔形成剤の少なくとも一部を揮発させる工程が、組成物を硬化して素地を形成する工程の前に実施され、組成物の温度を細孔形成剤の凝固点まで低下させる工程と、細孔形成剤の少なくとも一部を凍結させて細孔形成剤の一部を組成物の別の成分から相分離させる工程と、細孔形成剤の一部の少なくとも一部を揮発させるのに十分な時間、上記の温度で、細孔形成剤の蒸気圧を下回るが組成物の別の成分の蒸気圧を上回るまで気圧を低下させる工程とを含む、請求項3に記載の方法。
- 細孔形成剤が、デカメチルシクロペンタシロキサン、テトラメチルテトラフェニルトリシロキサン、フェニルトリメチルシラン、テトラ−n−ブチルシラン、p−トリルトリメチルシラン、メチルトリ−n−トリオクチルシラン、ジメチルジフェニルシラン、メチルトリ−n−ヘキシルシラン、ヘキサメチルジシロキサン、オクタメチルトリシロキサン、デカメチルテトラシロキサン、ドデカメチルペンタシロキサン、フェニルトリス(トリメチルシロキシ)シラン、メチルトリス(トリメチルシロキシ)シラン、3,3,3−トリフルオロプロピルトリス(トリメチルシロキシ)シラン、テトラキス(トリメチルシロキシ)シラン、又は液体シロキサン種と反応しない式(R3SiO)3SiR又は(R3SiO)4Siの化合物(式中、Rは一価炭化水素、ハロゲン化炭素又はハロゲン化炭化水素である。)或いはこれらの1種以上を含む組合せを含む含ケイ素剤である、請求項1乃至請求項4のいずれか1項に記載の方法。
- 細孔形成剤の少なくとも一部を揮発させる工程が、焼成前に細孔形成剤の一部を揮発させるのに十分な時間、含ケイ素剤の硬化温度を超えて含ケイ素剤の沸点に至るまでの温度に素地の温度を上昇させる工程を含む、請求項5に記載の方法。
- 組成物を硬化して素地を形成する工程が、細孔形成剤の少なくとも一部を組成物の別の成分から相分離させる工程を含む、請求項5又は請求項6に記載の方法。
- 含ケイ素剤が、1,3,5−トリス(3,3,3−トリフルオロプロピル)トリメチルシクロトリシロキサンを含む、請求項7に記載の方法。
- セラミック体をインベストメント鋳造鋳型内に配置する工程と、インベストメント鋳造鋳型内で溶融金属を凝固させる工程とをさらに含む、請求項1乃至請求項8のいずれか1項に記載の方法。
- 配置する工程が、プリンターノズルから材料を射出する工程を含む、請求項1乃至請求項9のいずれか1項に記載の方法。
- 配置する工程が、連続的な堆積作業で複数の層の材料を配置する工程を含む、請求項1乃至請求項10のいずれか1項に記載の方法。
- 多孔質セラミック構造体を製造するための組成物であって、
1種以上のシロキサン種を含む液体と、
上記液体中に配合され、セラミック材料を含む複数の粒子と、
上記液体中に配合される触媒材料と、
液体に対して不活性な試薬を含む細孔形成剤であって、(a)1300g/モル未満の数平均分子量を有する含ケイ素剤、又は(b)上記液体に可溶性で1000g/モル未満の分子質量及び−40℃〜25℃の凝固点を有する分子、或いはこれらの組合せのいずれかである細孔形成剤と
を含み、
細孔形成剤が組成物全体の7体積%〜35体積%の濃度で組成物中に存在し、かつ組成物中のセラミック粉体の量が30体積%〜70体積%である、組成物。 - 細孔形成剤が、シクロヘキサン、ベンゼン、p−キシレン、o−キシレン、シクロオクタン、シクロノナン、ビシクロヘキシル、トリデカン、ドデカン、3,4−ジクロロトルエン、シクロウンデカン、シクロヘプタン、2,2,3,3−テトラメチルペンタン、2,2,5,5−テトラメチルヘキサン又はこれらの1種以上を含む組合せを含む、請求項12に記載の組成物。
- 細孔形成剤が、デカメチルシクロペンタシロキサン、テトラメチルテトラフェニルトリシロキサン、フェニルトリメチルシラン、テトラ−n−ブチルシラン、p−トリルトリメチルシラン、メチルトリ−n−トリオクチルシラン、ジメチルジフェニルシラン、メチルトリ−n−ヘキシルシラン、ヘキサメチルジシロキサン、オクタメチルトリシロキサン、デカメチルテトラシロキサン、ドデカメチルペンタシロキサン、フェニルトリス(トリメチルシロキシ)シラン、メチルトリス(トリメチルシロキシ)シラン、3,3,3−トリフルオロプロピルトリス(トリメチルシロキシ)シラン、テトラキス(トリメチルシロキシ)シラン、及び液体シロキサン種と反応しない式(R3SiO)3SiR又は(R3SiO)4Siの化合物(式中、Rは一価炭化水素、ハロゲン化炭素又はハロゲン化炭化水素である。)、或いはこれらの1種以上を含む組合せを含む含ケイ素剤である、請求項12又は請求項13に記載の組成物。
- 含ケイ素剤が、1,3,5−トリス(3,3,3−トリフルオロプロピル)トリメチルシクロトリシロキサンを含む、請求項14に記載の組成物。
- 液体の1種以上のシロキサン種が、アルケニル官能基、ヒドリド官能基又はそれらの組合せを含む、請求項12乃至請求項15のいずれか1項に記載の組成物。
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WO2021061556A1 (en) * | 2019-09-27 | 2021-04-01 | Corning Incorporated | Extrudable ceramic precursor mixtures and methods of use |
CN111136243B (zh) * | 2020-01-13 | 2021-06-18 | 中北大学 | 陶瓷/金属复合层的铸造方法 |
US11578002B2 (en) | 2020-02-27 | 2023-02-14 | General Electric Company | Ceramic slurries with photoreactive-photostable hybrid binders |
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