JP6749240B2 - 反射側壁を有する発光デバイス - Google Patents

反射側壁を有する発光デバイス Download PDF

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JP6749240B2
JP6749240B2 JP2016544867A JP2016544867A JP6749240B2 JP 6749240 B2 JP6749240 B2 JP 6749240B2 JP 2016544867 A JP2016544867 A JP 2016544867A JP 2016544867 A JP2016544867 A JP 2016544867A JP 6749240 B2 JP6749240 B2 JP 6749240B2
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reflective layer
light emitting
wavelength conversion
conversion element
emitting device
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JP2017504206A5 (enExample
JP2017504206A (ja
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ドーン シュリッカー,エイプリル
ドーン シュリッカー,エイプリル
ケヴィン マイ,キム
ケヴィン マイ,キム
ジュード モラン,ブレンダン
ジュード モラン,ブレンダン
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ルミレッズ ホールディング ベーフェー
ルミレッズ ホールディング ベーフェー
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/034Manufacture or treatment of coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0362Manufacture or treatment of packages of encapsulations

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  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
JP2016544867A 2014-01-09 2015-01-02 反射側壁を有する発光デバイス Active JP6749240B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461925328P 2014-01-09 2014-01-09
US61/925,328 2014-01-09
PCT/IB2015/050025 WO2015104648A1 (en) 2014-01-09 2015-01-02 Light emitting device with reflective sidewall

Publications (3)

Publication Number Publication Date
JP2017504206A JP2017504206A (ja) 2017-02-02
JP2017504206A5 JP2017504206A5 (enExample) 2018-02-22
JP6749240B2 true JP6749240B2 (ja) 2020-09-02

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JP2016544867A Active JP6749240B2 (ja) 2014-01-09 2015-01-02 反射側壁を有する発光デバイス

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US (2) US10211374B2 (enExample)
EP (1) EP3092664B1 (enExample)
JP (1) JP6749240B2 (enExample)
KR (1) KR102318355B1 (enExample)
CN (2) CN105874615B (enExample)
WO (1) WO2015104648A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017124155A1 (de) * 2017-10-17 2019-04-18 Osram Opto Semiconductors Gmbh Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements
CN111261752B (zh) * 2018-11-30 2021-08-06 光宝光电(常州)有限公司 发光封装结构及其制造方法
JP6849139B1 (ja) * 2019-08-02 2021-03-24 日亜化学工業株式会社 発光装置および面発光光源
JP7570863B2 (ja) * 2020-09-24 2024-10-22 スタンレー電気株式会社 半導体発光装置及び半導体発光モジュール
EP4295405A1 (en) * 2021-02-16 2023-12-27 Lumileds LLC Method for manufacturing light emitting elements, light emitting element, lighting device and automotive headlamp
CN119133347A (zh) * 2023-06-13 2024-12-13 光宝科技股份有限公司 发光装置及其制造方法
WO2025069513A1 (ja) * 2023-09-26 2025-04-03 日亜化学工業株式会社 発光装置及びその製造方法
CN119855342A (zh) * 2025-03-21 2025-04-18 江西省兆驰光电有限公司 倒装led灯珠及其封装方法、显示屏

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005158795A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び半導体発光装置
US20050116635A1 (en) * 2003-12-02 2005-06-02 Walson James E. Multiple LED source and method for assembling same
DE112006000694B4 (de) 2005-03-24 2013-10-17 Kyocera Corp. Gehäuse für Lichtemissionsvorrichtung, lichtemittierende Vorrichtung und Beleuchtungsvorrichtung
JP2007019096A (ja) 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd 発光装置及びその製造方法
WO2008078235A2 (en) * 2006-12-21 2008-07-03 Koninklijke Philips Electronics N.V. Light-emitting apparatus with shaped wavelength converter
DE102007019776A1 (de) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
US7652301B2 (en) 2007-08-16 2010-01-26 Philips Lumileds Lighting Company, Llc Optical element coupled to low profile side emitting LED
RU2489774C2 (ru) * 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления
CN101897040B (zh) 2007-12-11 2013-06-12 皇家飞利浦电子股份有限公司 具有混合顶部反射器的侧发射器件
JP2011515846A (ja) 2008-03-21 2011-05-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光装置
KR101266205B1 (ko) * 2008-07-08 2013-05-21 우시오덴키 가부시키가이샤 발광 장치 및 발광 장치의 제조 방법
WO2010035206A1 (en) * 2008-09-25 2010-04-01 Koninklijke Philips Electronics N.V. Coated light emitting device and method for coating thereof
JP5278023B2 (ja) * 2009-02-18 2013-09-04 日亜化学工業株式会社 発光装置の製造方法
WO2010143114A1 (en) * 2009-06-11 2010-12-16 Koninklijke Philips Electronics N.V. Led illumination device
US8097894B2 (en) 2009-07-23 2012-01-17 Koninklijke Philips Electronics N.V. LED with molded reflective sidewall coating
JP5396215B2 (ja) 2009-09-24 2014-01-22 スタンレー電気株式会社 半導体発光装置の製造方法、半導体発光装置および液晶表示装置
JP5810301B2 (ja) * 2009-11-25 2015-11-11 パナソニックIpマネジメント株式会社 照明装置
DE102009058006B4 (de) 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
EP3509113A1 (en) * 2010-04-08 2019-07-10 Nichia Corporation Method of manufacturing the light emitting device
DE102010027253B4 (de) 2010-07-15 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010032041A1 (de) * 2010-07-23 2012-01-26 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zur Herstellung von strahlungsemittierenden Bauelemnenten
TW201216508A (en) 2010-10-06 2012-04-16 Chi Mei Lighting Tech Corp Light-emitting diode device and manufacturing method thereof
KR101209449B1 (ko) 2011-04-29 2012-12-07 피에스아이 주식회사 풀-칼라 led 디스플레이 장치 및 그 제조방법
DE102011080458A1 (de) * 2011-08-04 2013-02-07 Osram Opto Semiconductors Gmbh Optoelektronische anordnung und verfahren zur herstellung einer optoelektronischen anordnung
JP5848562B2 (ja) * 2011-09-21 2016-01-27 シチズン電子株式会社 半導体発光装置及びその製造方法。
JP5956167B2 (ja) * 2012-01-23 2016-07-27 スタンレー電気株式会社 発光装置、車両用灯具及び発光装置の製造方法
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
KR20150004246A (ko) * 2012-04-11 2015-01-12 가부시끼가이샤 도시바 차폐된 실리콘 기판을 갖는 발광 디바이스
JP6094062B2 (ja) 2012-06-01 2017-03-15 日亜化学工業株式会社 発光装置及びその製造方法
JP2014093403A (ja) * 2012-11-02 2014-05-19 Shin Etsu Chem Co Ltd 熱硬化性シリコーン樹脂シート及びその製造方法、該熱硬化性シリコーン樹脂シートを使用する発光装置及びその製造方法
DE102013214877A1 (de) * 2013-07-30 2015-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Abdeckelements und eines optoelektronischen Bauelements, Abdeckelement und optoelektronisches Bauelement

Also Published As

Publication number Publication date
KR20160106697A (ko) 2016-09-12
CN110890449A (zh) 2020-03-17
CN105874615B (zh) 2020-01-03
CN105874615A (zh) 2016-08-17
KR102318355B1 (ko) 2021-10-28
US11404608B2 (en) 2022-08-02
CN110890449B (zh) 2023-11-07
EP3092664A1 (en) 2016-11-16
US20190189857A1 (en) 2019-06-20
US20160365487A1 (en) 2016-12-15
EP3092664B1 (en) 2019-08-14
US10211374B2 (en) 2019-02-19
WO2015104648A1 (en) 2015-07-16
JP2017504206A (ja) 2017-02-02

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