JP6746011B2 - 成膜方法および成膜装置 - Google Patents

成膜方法および成膜装置 Download PDF

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Publication number
JP6746011B2
JP6746011B2 JP2019553136A JP2019553136A JP6746011B2 JP 6746011 B2 JP6746011 B2 JP 6746011B2 JP 2019553136 A JP2019553136 A JP 2019553136A JP 2019553136 A JP2019553136 A JP 2019553136A JP 6746011 B2 JP6746011 B2 JP 6746011B2
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Japan
Prior art keywords
target
film forming
ring
magnetic field
magnetic circuit
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Japanese (ja)
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JPWO2020003895A1 (ja
Inventor
具和 須田
具和 須田
高橋　明久
明久 高橋
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Ulvac Inc
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Ulvac Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2019553136A 2018-06-26 2019-05-31 成膜方法および成膜装置 Active JP6746011B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018121131 2018-06-26
JP2018121131 2018-06-26
PCT/JP2019/021844 WO2020003895A1 (ja) 2018-06-26 2019-05-31 成膜方法および成膜装置

Publications (2)

Publication Number Publication Date
JPWO2020003895A1 JPWO2020003895A1 (ja) 2020-07-02
JP6746011B2 true JP6746011B2 (ja) 2020-08-26

Family

ID=68987067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019553136A Active JP6746011B2 (ja) 2018-06-26 2019-05-31 成膜方法および成膜装置

Country Status (5)

Country Link
JP (1) JP6746011B2 (ko)
KR (1) KR102257920B1 (ko)
CN (1) CN110859041B (ko)
TW (1) TWI712699B (ko)
WO (1) WO2020003895A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116092899B (zh) * 2023-01-16 2024-01-09 深圳市矩阵多元科技有限公司 用于pvd平面靶的扫描磁控管装置与磁控溅射设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145020B1 (ko) 1971-04-26 1976-12-01
JPH1046334A (ja) * 1996-04-24 1998-02-17 Anelva Corp スパッタ成膜装置
JP4453850B2 (ja) * 1999-06-01 2010-04-21 キヤノンアネルバ株式会社 スパッタ成膜装置およびスパッタ膜形成方法
JP4289916B2 (ja) * 2003-04-18 2009-07-01 大日本印刷株式会社 薄膜の製造方法および薄膜製造装置
JP4984211B2 (ja) * 2006-03-06 2012-07-25 大日本印刷株式会社 スパッタ装置およびスパッタ方法
JP4796532B2 (ja) * 2007-04-05 2011-10-19 株式会社アルバック 成膜源、スパッタ装置
JP5145020B2 (ja) * 2007-12-18 2013-02-13 株式会社アルバック 成膜装置及び成膜方法
CN101861410B (zh) * 2008-01-21 2013-01-02 株式会社爱发科 溅射成膜方法以及溅射成膜装置
JP5003667B2 (ja) * 2008-12-15 2012-08-15 大日本印刷株式会社 薄膜の製造方法および薄膜製造装置
TWI589717B (zh) * 2011-11-03 2017-07-01 海帝斯科技公司 使用濺射裝置的濺射方法
WO2014010148A1 (ja) * 2012-07-11 2014-01-16 キヤノンアネルバ株式会社 スパッタリング装置および磁石ユニット
CN105803410B (zh) * 2016-04-29 2018-07-17 京东方科技集团股份有限公司 磁控溅射装置、磁控溅射设备及磁控溅射的方法

Also Published As

Publication number Publication date
KR20200002813A (ko) 2020-01-08
CN110859041B (zh) 2022-11-01
WO2020003895A1 (ja) 2020-01-02
KR102257920B1 (ko) 2021-05-28
TW202000962A (zh) 2020-01-01
JPWO2020003895A1 (ja) 2020-07-02
TWI712699B (zh) 2020-12-11
CN110859041A (zh) 2020-03-03

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