JP6718938B2 - 量子ドットと、これを備える量子ドット発光ダイオードおよび量子ドット発光表示装置 - Google Patents
量子ドットと、これを備える量子ドット発光ダイオードおよび量子ドット発光表示装置 Download PDFInfo
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- JP6718938B2 JP6718938B2 JP2018194077A JP2018194077A JP6718938B2 JP 6718938 B2 JP6718938 B2 JP 6718938B2 JP 2018194077 A JP2018194077 A JP 2018194077A JP 2018194077 A JP2018194077 A JP 2018194077A JP 6718938 B2 JP6718938 B2 JP 6718938B2
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- 239000002096 quantum dot Substances 0.000 title claims description 144
- 239000004065 semiconductor Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 13
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 52
- 239000004020 conductor Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- -1 9,9-dioctylfluorenyl-2,7-diyl Chemical group 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 101100063942 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) dot-1 gene Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 2
- 239000004246 zinc acetate Substances 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Description
酢酸亜鉛(0.073g、0.4mmol)、オレイン酸(0.237g、0.82mmol)、Se(0.064g、0.8mmol)、オクタデセン(26ml)を三口フラスコに入れ、真空状態で120℃の条件下において2時間加熱した。
下記の表1に示すアノード、正孔注入層、正孔輸送層、発光物質層、電子輸送層、およびカソードは順次に積層されて量子ドット発光ダイオードを形成する(PEDOT:ポリ(3,4−エチレンジオキシチオフェン)ポリスチレンスルフォネート,TFB:ポリ[(9,9−ジオクチルフルオレニル−2,7−ジイル)−コ−(4,4’−(N−(4−sec−ブチルフェニル)ジフェニルアミン))]:(Poly[(9,9−dioctylfluorenyl−2,7−diyl)−co−(4,4’−(N−(4−sec−butylphenyl) diphenylamine))]))。
Claims (13)
- 第1半導体物質からなる第1コアと、
前記第1コアの外側に位置し、第2半導体物質からなる第1シェルと、
前記第1コアと前記第1シェルとの間に位置し、前記第1および第2半導体物質の内の1つならびにドープ金属からなる第2コアと、を含み、
前記第1半導体物質は、ZnSeであり、前記第2半導体物質は、ZnSeSである、量子ドット。 - 前記ドープ金属は、VII族、XI族、XII族、XIII族の元素である、請求項1に記載の量子ドット。
- 前記金属は、Al、Mn、Cu、Ga、Inのうち、少なくともいずれかの1つである、請求項2に記載の量子ドット。
- 前記第1シェルの外側に位置し、第3半導体物質からなる第2シェルをさらに含む、請求項1に記載の量子ドット。
- 前記第3半導体物質は、ZnSである、請求項4に記載の量子ドット。
- 前記第1コアからの光の強度、および前記第2コアからの光の強度は、前記ドープ金属のドープ比に依存する、請求項1に記載の量子ドット。
- 前記第1コアから第1波長を有する第1波長帯の光が発光し、前記第2コアから前記第1波長より長い第2波長を有する第2波長帯の光が発光し、
前記ドープ金属が前記第2コアにおいて第1ドープ比を有する場合、前記第1波長帯の光は第1強度を有し、前記第2波長帯の光は前記第1強度より小さい第2強度を有し、
前記ドープ金属が前記第2コアにおいて、前記第1ドープ比より大きい第2ドープ比を有する場合、前記第1波長帯の光は第3強度を有し、前記第2波長帯の光は前記第3強度より大きい第4強度を有する、請求項1に記載の量子ドット。 - 第1エネルギーバンドギャップを有する第1コアと、
前記第1コアの外側に位置し、前記第1エネルギーバンドギャップより大きい第2エネルギーバンドギャップを有する第1シェルと、
前記第1コアと前記第1シェルとの間に位置し、前記第1エネルギーバンドギャップより小さい第3エネルギーバンドギャップを有する第2コアと、を含み、
前記第1コアは、ZnSeからなり、前記第1シェルは、ZnSeSからなり、前記第2コアは、AlのドープされたZnSeSである、量子ドット。 - 前記第1コアから第1波長の光が放出され、前記第2コアから前記第1波長より大きい第2波長の光が放出される、請求項8に記載の量子ドット。
- 前記第1シェルの外側に位置し、前記第2エネルギーバンドギャップより大きい第4エネルギーバンドギャップを有する第2シェルをさらに含む、請求項8に記載の量子ドット。
- 第1電極と、
前記第1電極と対向する第2電極と、
請求項1ないし請求項10のうち、いずれか1項に記載の量子ドットを含み、前記第1電極と前記第2電極との間に位置する発光層と、を備える量子ドット発光ダイオード。 - 基板と、
前記基板の上部に位置する請求項11に記載の量子ドット発光ダイオードと、
前記基板と前記量子ドット発光ダイオードとの間に位置し、前記第1電極に接続される薄膜トランジスタと、を備える量子ドット発光表示装置。 - 前記基板と前記量子ドット発光ダイオードとの間、または前記量子ドット発光ダイオードの上部に位置するカラーフィルターをさらに備える、請求項12に記載の量子ドット発光表示装置。
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