JP6715975B2 - 基板処理装置及び半導体装置の製造方法 - Google Patents

基板処理装置及び半導体装置の製造方法 Download PDF

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Publication number
JP6715975B2
JP6715975B2 JP2019034073A JP2019034073A JP6715975B2 JP 6715975 B2 JP6715975 B2 JP 6715975B2 JP 2019034073 A JP2019034073 A JP 2019034073A JP 2019034073 A JP2019034073 A JP 2019034073A JP 6715975 B2 JP6715975 B2 JP 6715975B2
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Prior art keywords
substrate holder
reaction tube
gas
heater
held
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Japanese (ja)
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JP2019165210A (ja
Inventor
周平 西堂
周平 西堂
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Kokusai Electric Corp
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Kokusai Electric Corp
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Priority to US16/354,864 priority Critical patent/US10714362B2/en
Priority to US16/401,893 priority patent/US10593572B2/en
Publication of JP2019165210A publication Critical patent/JP2019165210A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2019034073A 2018-03-15 2019-02-27 基板処理装置及び半導体装置の製造方法 Active JP6715975B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16/354,864 US10714362B2 (en) 2018-03-15 2019-03-15 Substrate processing apparatus and method of manufacturing semiconductor device
US16/401,893 US10593572B2 (en) 2018-03-15 2019-05-02 Substrate processing apparatus and method of manufacturing semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018047873 2018-03-15
JP2018047873 2018-03-15

Publications (2)

Publication Number Publication Date
JP2019165210A JP2019165210A (ja) 2019-09-26
JP6715975B2 true JP6715975B2 (ja) 2020-07-01

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Country Status (3)

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JP (1) JP6715975B2 (zh)
KR (2) KR20190109216A (zh)
CN (1) CN110277305B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111033714B (zh) * 2017-09-27 2023-12-29 株式会社国际电气 基板处理装置、半导体器件的制造方法及记录介质
KR20220088920A (ko) 2020-01-28 2022-06-28 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반응관, 반도체 장치의 제조 방법 및 프로그램
CN115136284A (zh) * 2020-03-24 2022-09-30 株式会社国际电气 基板处理装置、半导体装置的制造方法、存储介质以及内管

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440221B2 (en) * 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
JP3479020B2 (ja) * 2000-01-28 2003-12-15 東京エレクトロン株式会社 熱処理装置
JP2002289603A (ja) * 2001-03-28 2002-10-04 Tokyo Electron Ltd 熱処理装置及び熱処理方法
JP3863786B2 (ja) * 2002-01-24 2006-12-27 株式会社日立国際電気 半導体製造装置および半導体装置の製造方法
US8282733B2 (en) * 2007-04-02 2012-10-09 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor apparatus
JP2008277777A (ja) * 2007-04-02 2008-11-13 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP5545055B2 (ja) * 2010-06-15 2014-07-09 東京エレクトロン株式会社 支持体構造及び処理装置
JP5545061B2 (ja) * 2010-06-18 2014-07-09 東京エレクトロン株式会社 処理装置及び成膜方法
JP5722450B2 (ja) * 2011-08-25 2015-05-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置および記録媒体
JP6016542B2 (ja) * 2012-09-13 2016-10-26 株式会社日立国際電気 反応管、基板処理装置、及び半導体装置の製造方法
JP2015173154A (ja) 2014-03-11 2015-10-01 東京エレクトロン株式会社 縦型熱処理装置、縦型熱処理装置の運転方法及び記憶媒体
JP6306411B2 (ja) * 2014-04-17 2018-04-04 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6579974B2 (ja) * 2015-02-25 2019-09-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、温度センサ及び半導体装置の製造方法
KR102048293B1 (ko) * 2015-02-25 2019-11-25 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 히터 및 반도체 장치의 제조 방법
TWI611043B (zh) * 2015-08-04 2018-01-11 Hitachi Int Electric Inc 基板處理裝置、半導體裝置之製造方法及記錄媒體
JP6529927B2 (ja) * 2016-04-15 2019-06-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム

Also Published As

Publication number Publication date
KR20190109216A (ko) 2019-09-25
CN110277305A (zh) 2019-09-24
KR20200121771A (ko) 2020-10-26
JP2019165210A (ja) 2019-09-26
CN110277305B (zh) 2023-08-22
KR102237780B1 (ko) 2021-04-07

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