JP6711838B2 - 静電チャック表面の半径方向外側パッド設計 - Google Patents

静電チャック表面の半径方向外側パッド設計 Download PDF

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Publication number
JP6711838B2
JP6711838B2 JP2017541608A JP2017541608A JP6711838B2 JP 6711838 B2 JP6711838 B2 JP 6711838B2 JP 2017541608 A JP2017541608 A JP 2017541608A JP 2017541608 A JP2017541608 A JP 2017541608A JP 6711838 B2 JP6711838 B2 JP 6711838B2
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Japan
Prior art keywords
gas
electrostatic chuck
radially aligned
outer edge
wafer spacing
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JP2017541608A
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English (en)
Japanese (ja)
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JP2018505561A (ja
JP2018505561A5 (https=
Inventor
ゴヴィンダ ラジ
ゴヴィンダ ラジ
ロバート ティー ヒラハラ
ロバート ティー ヒラハラ
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2018505561A5 publication Critical patent/JP2018505561A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2017541608A 2015-02-06 2016-01-06 静電チャック表面の半径方向外側パッド設計 Active JP6711838B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/616,647 US20160230269A1 (en) 2015-02-06 2015-02-06 Radially outward pad design for electrostatic chuck surface
US14/616,647 2015-02-06
PCT/US2016/012362 WO2016126360A1 (en) 2015-02-06 2016-01-06 Radially outward pad design for electrostatic chuck surface

Publications (3)

Publication Number Publication Date
JP2018505561A JP2018505561A (ja) 2018-02-22
JP2018505561A5 JP2018505561A5 (https=) 2019-02-14
JP6711838B2 true JP6711838B2 (ja) 2020-06-17

Family

ID=56564492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017541608A Active JP6711838B2 (ja) 2015-02-06 2016-01-06 静電チャック表面の半径方向外側パッド設計

Country Status (7)

Country Link
US (1) US20160230269A1 (https=)
EP (1) EP3254307B1 (https=)
JP (1) JP6711838B2 (https=)
KR (1) KR102619126B1 (https=)
CN (2) CN107208261A (https=)
TW (1) TWI685916B (https=)
WO (1) WO2016126360A1 (https=)

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US9646843B2 (en) * 2014-12-08 2017-05-09 Applied Materials, Inc. Tunable magnetic field to improve uniformity
KR102669903B1 (ko) * 2016-08-30 2024-05-28 주성엔지니어링(주) 기판 처리 장치
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
KR102359591B1 (ko) * 2017-06-16 2022-02-08 주성엔지니어링(주) 진공용 회전 전기 커넥터
JP7208168B2 (ja) * 2017-06-16 2023-01-18 チュソン エンジニアリング カンパニー，リミテッド 基板処理装置及び真空回転電気コネクタ
CN108538776B (zh) * 2018-03-29 2021-11-16 北京北方华创微电子装备有限公司 静电卡盘及其制造方法
KR102862930B1 (ko) 2018-06-22 2025-09-19 어플라이드 머티어리얼스, 인코포레이티드 반도체 웨이퍼 프로세싱에서 웨이퍼 후면 손상을 최소화하는 방법들
JP7134826B2 (ja) * 2018-10-11 2022-09-12 東京エレクトロン株式会社 静電チャックの生産方法
CN110158029B (zh) * 2019-07-05 2020-07-17 北京北方华创微电子装备有限公司 掩膜结构和fcva设备
WO2022265882A1 (en) * 2021-06-14 2022-12-22 Lam Research Corporation Frontside and backside pressure monitoring for substrate movement prevention
CN117836899A (zh) * 2021-08-13 2024-04-05 阳光技术有限责任公司 用于如离子和同位素生产等高真空应用的磁旋转装置
KR20240090158A (ko) 2021-10-01 2024-06-21 샤인 테크놀로지스 엘엘씨 이온 수집을 위한 섬유질 격자를 갖는 이온 생성 시스템
JP2023176711A (ja) * 2022-05-31 2023-12-13 日本特殊陶業株式会社 基板保持部材
EP4599483A1 (en) * 2022-10-03 2025-08-13 Elevated Materials Germany GmbH Web coating method and vented cooling drum with integral electrostatic clamping
US12600682B2 (en) 2022-11-11 2026-04-14 Applied Materials, Inc. Monolithic substrate support having porous features and methods of forming the same

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US5646814A (en) * 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
US5825607A (en) * 1996-05-08 1998-10-20 Applied Materials, Inc. Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
KR100422444B1 (ko) * 2001-05-29 2004-03-12 삼성전자주식회사 정전 척에 설치되는 웨이퍼 공간 지지장치 및 그 제조방법
US6946403B2 (en) * 2003-10-28 2005-09-20 Axcelis Technologies, Inc. Method of making a MEMS electrostatic chuck
KR100666039B1 (ko) * 2003-12-05 2007-01-10 동경 엘렉트론 주식회사 정전척
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US8422193B2 (en) * 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
US7576018B2 (en) * 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
JP2010521820A (ja) * 2007-03-12 2010-06-24 東京エレクトロン株式会社 基板内での処理の均一性を改善するための動的な温度背面ガス制御
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
TWI475594B (zh) * 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
KR101582785B1 (ko) * 2008-08-12 2016-01-07 어플라이드 머티어리얼스, 인코포레이티드 정전 척 조립체
US8861170B2 (en) * 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
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JP6396408B2 (ja) * 2013-03-15 2018-09-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静電チャックの修理および改修のための方法および装置

Also Published As

Publication number Publication date
JP2018505561A (ja) 2018-02-22
TW201637122A (zh) 2016-10-16
EP3254307B1 (en) 2022-03-02
KR102619126B1 (ko) 2023-12-27
CN107208261A (zh) 2017-09-26
KR20170110712A (ko) 2017-10-11
EP3254307A4 (en) 2018-08-15
CN114686834A (zh) 2022-07-01
EP3254307A1 (en) 2017-12-13
TWI685916B (zh) 2020-02-21
US20160230269A1 (en) 2016-08-11
WO2016126360A1 (en) 2016-08-11

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