CN107208261A - 用于静电卡盘表面的径向向外的垫设计 - Google Patents

用于静电卡盘表面的径向向外的垫设计 Download PDF

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Publication number
CN107208261A
CN107208261A CN201680004654.9A CN201680004654A CN107208261A CN 107208261 A CN107208261 A CN 107208261A CN 201680004654 A CN201680004654 A CN 201680004654A CN 107208261 A CN107208261 A CN 107208261A
Authority
CN
China
Prior art keywords
electrostatic chuck
chuck assembly
outer edge
elongated features
radially aligned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680004654.9A
Other languages
English (en)
Chinese (zh)
Inventor
戈文达·瑞泽
罗伯特·T·海拉哈拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN202210254455.0A priority Critical patent/CN114686834A/zh
Publication of CN107208261A publication Critical patent/CN107208261A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN201680004654.9A 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计 Pending CN107208261A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210254455.0A CN114686834A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/616,647 US20160230269A1 (en) 2015-02-06 2015-02-06 Radially outward pad design for electrostatic chuck surface
US14/616,647 2015-02-06
PCT/US2016/012362 WO2016126360A1 (en) 2015-02-06 2016-01-06 Radially outward pad design for electrostatic chuck surface

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202210254455.0A Division CN114686834A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计

Publications (1)

Publication Number Publication Date
CN107208261A true CN107208261A (zh) 2017-09-26

Family

ID=56564492

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201680004654.9A Pending CN107208261A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计
CN202210254455.0A Pending CN114686834A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202210254455.0A Pending CN114686834A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计

Country Status (7)

Country Link
US (1) US20160230269A1 (https=)
EP (1) EP3254307B1 (https=)
JP (1) JP6711838B2 (https=)
KR (1) KR102619126B1 (https=)
CN (2) CN107208261A (https=)
TW (1) TWI685916B (https=)
WO (1) WO2016126360A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689413B (zh) * 2018-03-29 2020-04-01 大陸商北京北方華創微電子裝備有限公司 靜電卡盤及其凸點製造方法
CN111048387A (zh) * 2018-10-11 2020-04-21 东京毅力科创株式会社 静电卡盘的再生方法和静电卡盘

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9646843B2 (en) * 2014-12-08 2017-05-09 Applied Materials, Inc. Tunable magnetic field to improve uniformity
KR102669903B1 (ko) * 2016-08-30 2024-05-28 주성엔지니어링(주) 기판 처리 장치
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
KR102359591B1 (ko) * 2017-06-16 2022-02-08 주성엔지니어링(주) 진공용 회전 전기 커넥터
JP7208168B2 (ja) * 2017-06-16 2023-01-18 チュソン エンジニアリング カンパニー，リミテッド 基板処理装置及び真空回転電気コネクタ
KR102862930B1 (ko) 2018-06-22 2025-09-19 어플라이드 머티어리얼스, 인코포레이티드 반도체 웨이퍼 프로세싱에서 웨이퍼 후면 손상을 최소화하는 방법들
CN110158029B (zh) * 2019-07-05 2020-07-17 北京北方华创微电子装备有限公司 掩膜结构和fcva设备
WO2022265882A1 (en) * 2021-06-14 2022-12-22 Lam Research Corporation Frontside and backside pressure monitoring for substrate movement prevention
CN117836899A (zh) * 2021-08-13 2024-04-05 阳光技术有限责任公司 用于如离子和同位素生产等高真空应用的磁旋转装置
KR20240090158A (ko) 2021-10-01 2024-06-21 샤인 테크놀로지스 엘엘씨 이온 수집을 위한 섬유질 격자를 갖는 이온 생성 시스템
JP2023176711A (ja) * 2022-05-31 2023-12-13 日本特殊陶業株式会社 基板保持部材
EP4599483A1 (en) * 2022-10-03 2025-08-13 Elevated Materials Germany GmbH Web coating method and vented cooling drum with integral electrostatic clamping
US12600682B2 (en) 2022-11-11 2026-04-14 Applied Materials, Inc. Monolithic substrate support having porous features and methods of forming the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW307031B (en) * 1996-05-08 1997-06-01 Applied Materials Inc Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
CN102160167A (zh) * 2008-08-12 2011-08-17 应用材料股份有限公司 静电吸盘组件
WO2014149182A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Methods and apparatus for electrostatic chuck repair and refurbishment

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646814A (en) * 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
KR100422444B1 (ko) * 2001-05-29 2004-03-12 삼성전자주식회사 정전 척에 설치되는 웨이퍼 공간 지지장치 및 그 제조방법
US6946403B2 (en) * 2003-10-28 2005-09-20 Axcelis Technologies, Inc. Method of making a MEMS electrostatic chuck
KR100666039B1 (ko) * 2003-12-05 2007-01-10 동경 엘렉트론 주식회사 정전척
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US8422193B2 (en) * 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
US7576018B2 (en) * 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
JP2010521820A (ja) * 2007-03-12 2010-06-24 東京エレクトロン株式会社 基板内での処理の均一性を改善するための動的な温度背面ガス制御
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
TWI475594B (zh) * 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
US8861170B2 (en) * 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
NL2009189A (en) * 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW307031B (en) * 1996-05-08 1997-06-01 Applied Materials Inc Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
CN102160167A (zh) * 2008-08-12 2011-08-17 应用材料股份有限公司 静电吸盘组件
WO2014149182A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Methods and apparatus for electrostatic chuck repair and refurbishment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689413B (zh) * 2018-03-29 2020-04-01 大陸商北京北方華創微電子裝備有限公司 靜電卡盤及其凸點製造方法
CN111048387A (zh) * 2018-10-11 2020-04-21 东京毅力科创株式会社 静电卡盘的再生方法和静电卡盘
CN111048387B (zh) * 2018-10-11 2024-04-05 东京毅力科创株式会社 静电卡盘的再生方法和静电卡盘

Also Published As

Publication number Publication date
JP2018505561A (ja) 2018-02-22
TW201637122A (zh) 2016-10-16
EP3254307B1 (en) 2022-03-02
KR102619126B1 (ko) 2023-12-27
KR20170110712A (ko) 2017-10-11
EP3254307A4 (en) 2018-08-15
CN114686834A (zh) 2022-07-01
JP6711838B2 (ja) 2020-06-17
EP3254307A1 (en) 2017-12-13
TWI685916B (zh) 2020-02-21
US20160230269A1 (en) 2016-08-11
WO2016126360A1 (en) 2016-08-11

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Legal Events

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PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170926

RJ01 Rejection of invention patent application after publication