JP6692908B2 - アンテナスイッチとダイプレクサのモノリシックな集積 - Google Patents

アンテナスイッチとダイプレクサのモノリシックな集積 Download PDF

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JP6692908B2
JP6692908B2 JP2018534945A JP2018534945A JP6692908B2 JP 6692908 B2 JP6692908 B2 JP 6692908B2 JP 2018534945 A JP2018534945 A JP 2018534945A JP 2018534945 A JP2018534945 A JP 2018534945A JP 6692908 B2 JP6692908 B2 JP 6692908B2
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radio frequency
circuit structure
filter
integrated
buried oxide
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JP2019508878A5 (https=
JP2019508878A (ja
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シチュン・グ
チェンジエ・ズオ
スティーヴ・ファネリ
トーマス・ジー
ヨン・キュ・ソン
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/218—Through-semiconductor vias, e.g. TSVs in silicon-on-insulator [SOI] wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/481—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes on the rear surfaces of the wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Engineering (AREA)
  • Transceivers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Filters And Equalizers (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
JP2018534945A 2016-01-11 2016-11-29 アンテナスイッチとダイプレクサのモノリシックな集積 Active JP6692908B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662277451P 2016-01-11 2016-01-11
US62/277,451 2016-01-11
US15/151,285 US10256863B2 (en) 2016-01-11 2016-05-10 Monolithic integration of antenna switch and diplexer
US15/151,285 2016-05-10
PCT/US2016/063973 WO2017123332A1 (en) 2016-01-11 2016-11-29 Monolithic integration of antenna switch and diplexer

Publications (3)

Publication Number Publication Date
JP2019508878A JP2019508878A (ja) 2019-03-28
JP2019508878A5 JP2019508878A5 (https=) 2019-06-13
JP6692908B2 true JP6692908B2 (ja) 2020-05-13

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Country Link
US (1) US10256863B2 (https=)
EP (1) EP3403278B1 (https=)
JP (1) JP6692908B2 (https=)
KR (1) KR102085549B1 (https=)
CN (1) CN108701682B (https=)
BR (1) BR112018013958B1 (https=)
CA (1) CA3007083A1 (https=)
TW (1) TWI681536B (https=)
WO (1) WO2017123332A1 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9825597B2 (en) 2015-12-30 2017-11-21 Skyworks Solutions, Inc. Impedance transformation circuit for amplifier
US10362678B2 (en) 2016-04-18 2019-07-23 Skyworks Solutions, Inc. Crystal packaging with conductive pillars
US10297576B2 (en) 2016-04-18 2019-05-21 Skyworks Solutions, Inc. Reduced form factor radio frequency system-in-package
US10062670B2 (en) 2016-04-18 2018-08-28 Skyworks Solutions, Inc. Radio frequency system-in-package with stacked clocking crystal
US10269769B2 (en) * 2016-04-18 2019-04-23 Skyworks Solutions, Inc. System in package with vertically arranged radio frequency componentry
TWI859783B (zh) 2016-12-29 2024-10-21 美商天工方案公司 前端系統、無線通信裝置及封裝前端模組
US10515924B2 (en) 2017-03-10 2019-12-24 Skyworks Solutions, Inc. Radio frequency modules
US20190198461A1 (en) * 2017-12-21 2019-06-27 Qualcomm Incorporated Forming a modified layer within a radio frequency (rf) substrate for forming a layer transferred rf filter-on-insulator wafer
US10580903B2 (en) 2018-03-13 2020-03-03 Psemi Corporation Semiconductor-on-insulator transistor with improved breakdown characteristics
US10573674B2 (en) 2018-07-19 2020-02-25 Psemi Corporation SLT integrated circuit capacitor structure and methods
US10672806B2 (en) 2018-07-19 2020-06-02 Psemi Corporation High-Q integrated circuit inductor structure and methods
US10658386B2 (en) 2018-07-19 2020-05-19 Psemi Corporation Thermal extraction of single layer transfer integrated circuits
US11581398B2 (en) * 2018-09-07 2023-02-14 Lfoundry S.R.L Method of fabrication of an integrated spiral inductor having low substrate loss
US10777636B1 (en) 2019-06-12 2020-09-15 Psemi Corporation High density IC capacitor structure
US11450469B2 (en) 2019-08-28 2022-09-20 Analog Devices Global Unlimited Company Insulation jacket for top coil of an isolated transformer
JP2021052376A (ja) * 2019-09-20 2021-04-01 株式会社村田製作所 高周波モジュールおよび通信装置
JP2021048565A (ja) * 2019-09-20 2021-03-25 株式会社村田製作所 高周波モジュールおよび通信装置
US11495554B2 (en) 2019-11-01 2022-11-08 Empower Semiconductor, Inc. Configurable capacitor
US11387316B2 (en) 2019-12-02 2022-07-12 Analog Devices International Unlimited Company Monolithic back-to-back isolation elements with floating top plate
CN110767606B (zh) * 2019-12-24 2020-04-17 杭州见闻录科技有限公司 一种具有复合功能的电子元器件及其制造方法
US11503704B2 (en) * 2019-12-30 2022-11-15 General Electric Company Systems and methods for hybrid glass and organic packaging for radio frequency electronics
JP2021158554A (ja) * 2020-03-27 2021-10-07 株式会社村田製作所 高周波モジュールおよび通信装置
JP2021158556A (ja) * 2020-03-27 2021-10-07 株式会社村田製作所 高周波モジュールおよび通信装置
TWI748451B (zh) * 2020-05-14 2021-12-01 芯巧科技股份有限公司 在同一晶圓上形成複數相隔離基底層的半導體裝置製程及其半導體裝置
CN111968972B (zh) * 2020-07-13 2024-03-26 深圳市汇芯通信技术有限公司 一种集成芯片及其制作方法和集成电路
US20220293513A1 (en) * 2021-03-11 2022-09-15 Qualcomm Incorporated Power decoupling metal-insulator-metal capacitor
CN119906455B (zh) * 2025-03-31 2025-07-04 深圳飞骧科技股份有限公司 射频开关芯片结构

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3924471B2 (ja) * 2002-01-30 2007-06-06 株式会社リコー スタンダードセルまたはマクロセルを含む半導体集積回路、およびその配置配線方法
US7098070B2 (en) * 2004-11-16 2006-08-29 International Business Machines Corporation Device and method for fabricating double-sided SOI wafer scale package with through via connections
US7473979B2 (en) * 2006-05-30 2009-01-06 International Business Machines Corporation Semiconductor integrated circuit devices having high-Q wafer back-side capacitors
JP2008011297A (ja) * 2006-06-30 2008-01-17 Fujitsu Ltd 撮像装置及び増幅回路
US7531407B2 (en) 2006-07-18 2009-05-12 International Business Machines Corporation Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
JP4361569B2 (ja) * 2007-01-29 2009-11-11 株式会社リコー スタンダードセルまたはマクロセルを含む半導体集積回路
US8145172B2 (en) * 2008-11-25 2012-03-27 Silicon Laboratories Inc. Low-cost receiver using tracking filter
JP2011193191A (ja) * 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体集積回路およびそれを内蔵した高周波モジュール
KR101881732B1 (ko) * 2011-06-30 2018-07-27 무라타 일렉트로닉스 오와이 시스템-인-패키지 디바이스를 제조하는 방법 및 시스템-인-패키지 디바이스
US8786079B2 (en) * 2011-08-10 2014-07-22 Skyworks Solutions, Inc. Antenna switch modules and methods of making the same
US9496255B2 (en) * 2011-11-16 2016-11-15 Qualcomm Incorporated Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same
US8803615B2 (en) * 2012-01-23 2014-08-12 Qualcomm Incorporated Impedance matching circuit with tunable notch filters for power amplifier
TWI529939B (zh) 2012-02-08 2016-04-11 新力股份有限公司 High frequency semiconductor device and its manufacturing method
WO2013130134A1 (en) * 2012-03-02 2013-09-06 Purdue Research Foundation Passive optical diode on semiconductor substrate
JP5865275B2 (ja) 2013-01-25 2016-02-17 株式会社東芝 高周波半導体スイッチ
US9478507B2 (en) * 2013-03-27 2016-10-25 Qualcomm Incorporated Integrated circuit assembly with faraday cage
US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9548522B2 (en) 2013-11-22 2017-01-17 Skyworks Solutions, Inc. Systems, circuits and methods related to low-loss bypass of a radio-frequency filter or diplexer
KR102428141B1 (ko) * 2014-02-25 2022-08-02 스카이워크스 솔루션즈, 인코포레이티드 향상된 무선-주파수 모듈들에 관한 시스템들, 디바이스들 및 방법들
US20160029436A1 (en) * 2014-07-24 2016-01-28 Hidria Aet Air heater having two-piece ceramic holder and ceramic holder for air heater and methods of assembly
US10042376B2 (en) * 2015-03-30 2018-08-07 Tdk Corporation MOS capacitors for variable capacitor arrays and methods of forming the same

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CA3007083A1 (en) 2017-07-20
BR112018013958A2 (pt) 2018-12-11
EP3403278A1 (en) 2018-11-21
EP3403278B1 (en) 2026-02-11
KR102085549B1 (ko) 2020-03-06
TWI681536B (zh) 2020-01-01
JP2019508878A (ja) 2019-03-28
US20170201291A1 (en) 2017-07-13
EP3403278C0 (en) 2026-02-11
US10256863B2 (en) 2019-04-09
TW201727870A (zh) 2017-08-01
KR20180102085A (ko) 2018-09-14
CN108701682A (zh) 2018-10-23
WO2017123332A1 (en) 2017-07-20
BR112018013958B1 (pt) 2023-02-28
CN108701682B (zh) 2021-07-30

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