JP6692217B2 - 荷電粒子顕微鏡において、試料の表面修正を分析する方法 - Google Patents

荷電粒子顕微鏡において、試料の表面修正を分析する方法 Download PDF

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JP6692217B2
JP6692217B2 JP2016114894A JP2016114894A JP6692217B2 JP 6692217 B2 JP6692217 B2 JP 6692217B2 JP 2016114894 A JP2016114894 A JP 2016114894A JP 2016114894 A JP2016114894 A JP 2016114894A JP 6692217 B2 JP6692217 B2 JP 6692217B2
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image
sample
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merit
surface modification
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JP2017004948A5 (enExample
JP2017004948A (ja
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ポトツェク パベル
ポトツェク パベル
ボウクホルベル フェイサル
ボウクホルベル フェイサル
ペトリュス ウィルヘルムス ファン デン ボハード マティエス
ペトリュス ウィルヘルムス ファン デン ボハード マティエス
コルクマズ エミネ
コルクマズ エミネ
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FEI Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/206—Modifying objects while observing
    • H01J2237/2067—Surface alteration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2016114894A 2015-06-09 2016-06-08 荷電粒子顕微鏡において、試料の表面修正を分析する方法 Active JP6692217B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15171227.0A EP3104155A1 (en) 2015-06-09 2015-06-09 Method of analyzing surface modification of a specimen in a charged-particle microscope
EP15171227.0 2015-06-09

Publications (3)

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JP2017004948A JP2017004948A (ja) 2017-01-05
JP2017004948A5 JP2017004948A5 (enExample) 2019-07-11
JP6692217B2 true JP6692217B2 (ja) 2020-05-13

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JP2016114894A Active JP6692217B2 (ja) 2015-06-09 2016-06-08 荷電粒子顕微鏡において、試料の表面修正を分析する方法

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US (2) US10115561B2 (enExample)
EP (2) EP3104155A1 (enExample)
JP (1) JP6692217B2 (enExample)
CN (1) CN106252187B (enExample)

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EP3591685A1 (en) * 2018-07-06 2020-01-08 FEI Company Electron microscope with improved imaging resolution
DE102018120630B3 (de) * 2018-08-23 2019-10-31 Carl Zeiss Microscopy Gmbh Verfahren zum Bearbeiten eines Objekts und Programm zur Steuerung eines Partikelstrahlsystems
EP3647763B1 (en) * 2018-10-29 2021-07-14 FEI Company A method of preparing a biological sample for study in an analysis device
DE102019210452A1 (de) * 2019-07-16 2021-01-21 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtung zum Erfassen von Volumeninformationen dreidimensionaler Proben
US10921268B1 (en) * 2019-09-09 2021-02-16 Fei Company Methods and devices for preparing sample for cryogenic electron microscopy
SE543979C2 (en) * 2019-09-20 2021-10-12 Metso Outotec Finland Oy Mining Equipment Inspection System, Mining Equipment Inspection Method, and Mining Equipment Inspection Device
US20210374467A1 (en) * 2020-05-29 2021-12-02 Fei Company Correlated slice and view image annotation for machine learning
US11282670B1 (en) * 2020-12-29 2022-03-22 Fei Company Slice depth reconstruction of charged particle images using model simulation for improved generation of 3D sample images
EP4024039B1 (en) * 2020-12-30 2023-10-25 FEI Company Data acquisition and processing techniques for three-dimensional reconstruction
DE102021124099B4 (de) * 2021-09-17 2023-09-28 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops in einem Kontrast-Betriebsmodus mit defokussierter Strahlführung, Computerprogramprodukt und Vielstrahlteilchenmikroskop
DE102021214447A1 (de) * 2021-12-15 2023-06-15 Carl Zeiss Smt Gmbh Elektronenmikroskop zum Untersuchen einer Probe

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JP3648384B2 (ja) * 1998-07-03 2005-05-18 株式会社日立製作所 集束イオンビーム加工方法及び加工装置
US6399944B1 (en) 1999-07-09 2002-06-04 Fei Company Measurement of film thickness by inelastic electron scattering
US6322672B1 (en) 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
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US20040121069A1 (en) 2002-08-08 2004-06-24 Ferranti David C. Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope
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JP5764380B2 (ja) 2010-04-29 2015-08-19 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ Ｓｅｍ画像化法
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Also Published As

Publication number Publication date
EP3104392A1 (en) 2016-12-14
US20160365224A1 (en) 2016-12-15
US10811223B2 (en) 2020-10-20
EP3104155A1 (en) 2016-12-14
US10115561B2 (en) 2018-10-30
CN106252187A (zh) 2016-12-21
CN106252187B (zh) 2020-12-01
US20190051492A1 (en) 2019-02-14
JP2017004948A (ja) 2017-01-05

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